TWI499019B - 晶片結構、3d封裝結構及用以形成封裝結構之方法 - Google Patents

晶片結構、3d封裝結構及用以形成封裝結構之方法 Download PDF

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Publication number
TWI499019B
TWI499019B TW101131840A TW101131840A TWI499019B TW I499019 B TWI499019 B TW I499019B TW 101131840 A TW101131840 A TW 101131840A TW 101131840 A TW101131840 A TW 101131840A TW I499019 B TWI499019 B TW I499019B
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Taiwan
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device wafer
substrate
support substrate
flat
wafer
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TW101131840A
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TW201316468A (zh
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Kevin J Lee
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Intel Corp
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Description

晶片結構、3D封裝結構及用以形成封裝結構之方法 發明領域
本發明係有關於三維(3D)封裝法，且更特別的是，有關於矽通孔(TSV)的整合。
 發明背景
3D封裝法成為微電子向系統單晶片(SOC)及系統單封裝(SIP)發展的解決方案。特別是，有TSV的3D覆晶結構有可能被廣泛地採用。TSV 3D封裝件一般含有兩個或更多個垂直堆疊的晶片，其中穿過矽基板的通孔係取代邊緣佈線以在各個晶片上的電路元件之間建立電氣連接。
在TSV加工期間，通常將裝置晶圓背面減薄至50至100微米厚。在沒有可保持晶圓平坦的某種支撐系統下無法成功地處理晶圓以及保護易碎減薄晶圓免於機械損傷，例如脫落(chipping)、破裂等等。
當前TSV製程通常包括用暫時黏著劑使裝置晶圓附著至暫時支撐晶圓，然後在加工流程順序結束時由支撐晶圓卸下減薄裝置晶圓。數個實施例可用來由支撐晶圓卸下減薄裝置晶圓。
第一實施例使用熱釋放性。在此實施例中，熱塑性黏著劑用來使裝置晶圓暫時接合至暫時支撐晶圓。在TSV加工完成後，熱用來軟化黏著劑，然後用機械方式使減薄裝置晶圓與暫時支撐晶圓分離。
第二實施例使用紫外線(UV)釋放性。在此實施例中，裝置晶圓用紫外線可固化暫時黏著劑以及光熱轉換(LTHC)釋放塗層附著至暫時玻璃載體晶圓。在TSV加工完成後，通過玻璃載體晶圓施加雷射輻射至LTHC層，從而使其弱化。然後，剝除(lift off)減薄裝置晶圓的玻璃載體，接著剝離(peel off)減薄裝置晶圓的紫外線可固化黏著劑。
第三實施例使用溶劑釋放性。在此實施例中，裝置晶圓用暫時黏著劑附著至穿孔暫時載體晶圓。一旦TSV加工完成，通過暫時載體晶圓的穿孔施加溶劑以溶解掉暫時黏著劑。
在這3個實施例中，暫時黏著劑在機械上都是軟的，以及對於易碎裝置晶圓在TSV加工期間的機械損傷提供最少的保護。
依據本發明之一實施例，係特地提出一種結構，其係包含：一半導體基板，其係有前表面、背表面、一微電子裝置、以及在該背表面及該前表面之間延伸穿過該半導體基板的一通孔；形成於該前表面上面的一經回焊焊料凸塊；以及形成於該前表面上面以及於該經回焊焊料凸塊四周的經固化之一熱固性材料，其中經固化之該熱固性材料與該經回焊焊料凸塊形成一平坦前側接合面。
圖式簡單說明
第1圖的剖面側視圖根據本發明之具體實施例圖示在接合至支撐基板之前的反置裝置晶圓。
第2圖的剖面側視圖根據本發明之具體實施例圖示接合至支撐基板的反置裝置晶圓。
第3圖的剖面側視圖根據本發明之具體實施例圖示接合至支撐基板之反置裝置晶圓的後通孔加工。
第4圖的剖面側視圖根據本發明之具體實施例圖示在支撐基板移除後的已加工裝置晶圓。
第5圖的側視圖根據本發明之具體實施例圖示實現TSV的3D封裝件。
第6圖為根據本發明之具體實施例的系統。
 較佳實施例之詳細說明
在各種具體實施例中，用附圖描述在TSV加工期間處理裝置晶圓的結構及方法。不過，可實施某些具體實施例而沒有該等特定細節中之一或更多，或結合其他習知方法及材料。在以下說明中，提出許多特定細節，例如特定材料及方法等等以供徹底了解本發明。在其他情況下，不特別詳細地描述習知的封裝製程及製造技術以免不必要地混淆本發明。在本專利說明書中論及“具體實施例”或“一具體實施例”時是意指本發明至少有一具體實施例包含與該具體實施例有關的特定特徵、結構、材料或特性。因此，本專利說明書中出現“在具體實施例中”或“在一具體實施例中”的片語不一定指稱同一個具體實施例。此外，可用任何適當方式將該等特定特徵、結構、材料或特性組合成一或更多具體實施例。
本文所用的術語“在...上面”，“至”，“在...之間”以及“在...上”可指一層相對於其他層的相對位置。一層在另一層“上面”或接合“至”另一層可與該另一層直接接觸或可具有一或更多中間層。一層在數層“之間”可與該等層直接接觸或可具有一或更多中間層。反之，第一層在第二層“上”是與該第二層接觸。
根據本發明之具體實施例，描述用可提供機械剛性及勁度以機械支撐裝置晶圓之TSV加工的基板支撐物及永久性黏著劑材料(例如，經固化之熱固性材料)用以暫時支撐裝置晶圓的結構及方法。此一方法可包括用永久性黏著劑材料使裝置晶圓附著至暫時支撐基板，然後在TSV加工完成後卸下暫時支撐基板。應瞭解，儘管本文詳細描述及圖示“後通孔”TSV加工(在金屬化結構後製成通孔)，然而本發明的具體實施例不受限於此，以及本發明的具體實施例也相容於“先通孔”TSV加工(在形成微電子裝置之前製成通孔)以及“中間通孔”TSV加工(在形成微電子裝置及金屬化結構之間製成通孔)。此外，儘管在此用TSV加工描述具體實施例，該等具體實施例也可應用於除矽晶圓之外的基板，例如III-V族或II-VI族化合物晶圓。
在一具體實施例中，描述一種結構，其係包含：有前表面、背表面、微電子裝置及在背表面、前表面之間延伸穿過半導體基板之通孔(例如，TSV)的半導體基板。在前表面上面形成一或更多經回焊焊料凸塊(reflowed solder bump)，以及在前表面上面以及在一或更多經回焊焊料凸塊 四周形成經固化之熱固性材料。經固化之熱固性材料與一或更多經回焊焊料凸塊一起形成一平坦前側接合面。在一些具體實施例中，該半導體基板可為包含多個所述結構的已TSV加工裝置晶圓。替換地，將已TSV加工裝置晶圓切單以形成多個半導體基板，可能或不進一步加工它們以形成多個晶片，然後可整合於3D封裝結構。因此，在一具體實施例中，該結構為晶片。
在一具體實施例中，描述一種3D封裝結構，其係包含：基板與包含前述結構(平坦前側接合面係附著至基板)的晶片。在此一具體實施例中，晶片可疊加一或更多附加晶片。
在一具體實施例中，描述一種方法，其係包含下列步驟：在熱及壓力下使裝置晶圓接合至支撐基板。該裝置晶圓可包含前表面以及形成於前表面上面的一或更多焊料凸塊。該支撐基板可包含一平坦潤濕表面。在該平坦潤濕表面上可形成一層熱固性材料。在熱及壓力下接合時，焊料凸塊穿透該層熱固性材料以及在回焊時遍佈或溼潤該平坦潤濕表面，以及使該熱固性材料至少部份固化。然後，可移除該基板支撐物以暴露包含該經回焊焊料凸塊及該至少部份固化之熱固性材料的平坦前側接合面。在後通孔加工流程中，在接合之後以及在移除支撐基板之前，可形成在裝置晶圓之前表面、背表面之間延伸的一或更多通孔。應瞭解，在形成通孔之前，在裝置晶圓的背表面上可進行研磨或化學機械拋光(CMP)操作以減少裝置晶圓的厚度。在 先通孔或中間通孔加工流程中，可在接合之前形成在裝置晶圓之前表面、背表面之間延伸的一或更多通孔。
請參考第1圖至第5圖，用附圖描述一種製造方法。如第1圖所示，反置之裝置晶圓100在支撐基板200上面。裝置晶圓100可包含前表面102與背表面104。裝置晶圓100可具有各種形態。例如，裝置晶圓可為塊材半導體(bulk semiconductor)，包括上覆塊材半導體的磊晶層，或包括絕緣體上半導體(SOI)結構，然而可使用其他結構。在圖示特定具體實施例中，裝置晶圓100包含含有上覆絕緣體層114之半導體層116和塊材基板118的(SOI)結構。裝置晶圓100可另外包含摻雜區或其他摻雜特徵以形成各種微電子裝置，例如金屬-絕緣體-半導體場效電晶體(MOSFET)，電容器，電感器，電阻器，二極體，微機電系統(MEMS)，其他適當主動或被動裝置，及彼等之組合。
在基板(即裝置晶圓100)的前表面102上面可形成金屬化結構112。如圖示，金屬化結構112包含由導電金屬(例如，銅、鋁等等)以及層間介電材料(例如，氧化矽、摻雜碳氧化物、氮化矽等等)形成的多個互連層。在金屬化結構112上半部上可形成鈍化層113以提供物理及化學保護。在鈍化層113的開口上面可提供一或更多導電墊108(例如，銅、鋁等等)，以及在導電墊108上可形成一或更多焊料凸塊106。
支撐基板200可包含平坦潤濕表面202，其係由在回焊期間與焊料凸塊106材料有可接受黏著力的材料形成 使得焊料凸塊106在回焊期間遍佈或溼潤平坦潤濕表面202。在一些具體實施例中，焊料凸塊106可為錫基、鉛錫基、銦基、或鉛基材料。在此類具體實施例中，平坦潤濕表面202可由可潤濕焊料金屬(例如，鎳、金、鉑、鈀、鈷、銅、鐵及鋼)形成。也可預期，可使用在回焊期間對於焊料凸塊106有充分黏性的非金屬平坦潤濕表面202。
平坦潤濕表面202可與塊材支撐基板200整體成形。例如，支撐基板200可為有平滑平坦潤濕表面202的塊材金屬，例如銅。也可在塊材基板206上面形成平坦潤濕表面202為個別層204。層204可能有較佳的潤濕或拋光特性。選擇用於形成塊材基板206及層204的材料也可基於成本、蝕刻特性以及在使裝置晶圓接合至基板支撐物後容易移除。
仍參考第1圖，在平坦潤濕表面202上形成一層熱固性材料208。該層熱固性材料208可由合適底填型或緩衝塗佈型材料形成，例如但不受限於：環氧樹脂、酚醛樹脂、聚亞醯胺及聚苯并噁唑(PBO)。可用各種方式塗上該層熱固性材料208，包括旋塗與薄片疊合。在塗佈至平坦潤濕表面202之前或之後，該層熱固性材料208也可經b階固化。
請參考第2圖，裝置晶圓100在熱及壓力下接合至支撐基板200。如圖示，多個焊料凸塊106穿透該層熱固性材料208以及在回焊期間遍佈或潤濕平坦潤濕表面202。同時，該層熱固性材料208至少部份被固化。
根據本發明之具體實施例，進行晶圓層級的接 合，其中接合頭(bond head)拾起在背表面104上的裝置晶圓100以及放置裝置晶圓100於基板支撐物200上，基板支撐物200接著支撐於底座(pedestal)上。特定的熱接合分布(thermal bonding profile)可取決於焊料凸塊106及熱固性材料208的類型。在示範熱壓縮接合法(TCB)中，例如，支撐基板200保持在100℃的階化溫度(staging temperature)。例如，在100℃的階化溫度，可用接合頭拾起裝置晶圓100。然後，將裝置晶圓100放在支撐基板200上，以及使接合頭溫度升到高於焊料凸塊106之液相溫度的溫度(例如250℃至300℃)。然後，接合頭溫度維持高於焊料(TAL)之液相溫度一段時間，以及接著使接合頭溫度降到低於焊料凸塊106之液相溫度的溫度(例如180℃)。在此時，接合後的結構可由底座移走以便離線固化，或以溫度適當升高的方式留在底座上以達成熱固性材料208的實質完全固化。
請參考第3圖，其係圖示“後通孔”加工，其中係加工裝置晶圓100以形成在晶圓之前表面102、背表面104之間延伸的至少一通孔120(例如，TSV)。儘管第3圖只圖示一個通孔120，然而應瞭解，這只是為了圖解說明，根據本發明之具體實施例，在裝置晶圓中可形成多個通孔。此外，儘管以“後通孔”加工圖示，然而應瞭解，本發明的具體實施例也相容於“先通孔”及“中間通孔”加工，它是在使裝置晶圓100接合至支撐基板200之前形成通孔120。
在形成通孔120之前，藉由研磨及/或化學機械拋光(CMP)背表面104可背面減薄裝置晶圓100。例如，在一具 體實施例中，裝置晶圓100可背面減薄至大約50至100微米。在減薄裝置晶圓100後，在背表面104上面可形成鈍化膜或膜堆疊(film stack)130以提供密封阻障物(hermetic barrier)。儘管未圖示，然而應瞭解，在加工通孔120之前、期間或之後，裝置晶圓100可另外加以加工以形成再分配線(RDL)以及其他增層結構(build-up structure)。
為了形成通孔120，在減薄裝置晶圓100的背表面104上面可形成光阻材料，然後曝光及顯影。在顯影後，阻劑塗層在想要有通孔120的位置處有開口。在矽裝置晶圓的情形下，矽通孔(TSV)開口的形成係藉由電漿蝕刻穿過鈍化膜或膜堆疊130以及穿過塊材基板118，在減薄裝置晶圓100的前表面102(裝置側)上的銅著陸墊(copper landing pad)停止。然後，移除光阻以及任何剩餘蝕刻聚合物或清掉裝置晶圓100的殘留物。然後，沉積絕緣層124於晶圓表面上，加襯矽通孔(TSV)120的底部及側壁。合適材料包含但不受限於：二氧化矽、氮化矽、碳化矽、以及各種聚合物。這些材料的沉積可用化學氣相沉積法(CVD)，原子層沉積法(ALD)、或旋塗法。
然後，非等向性蝕刻製程可用來移除TSV120底面及鈍化膜或膜堆疊130上的絕緣層124同時使TSV 120的側壁有實質的厚度。然後，可沉積阻障層126及種子層於裝置晶圓表面上。例如，阻障層126可包含鉭、鈦或鈷。例如，該種子層可為銅。然後，電鍍銅的毯覆層(blanket layer)於裝置晶圓表面上，用銅122完全填滿TSV。然後，用CMP移 除銅及阻障層的過載體(overburden)，如第3圖所示。
請參考第4圖，在減薄裝置晶圓100的加工完成後，隨後選擇性地移除支撐基板200。在一具體實施例中，支撐基板200為銅，以及用濕蝕刻劑移除，例如美國Transcene公司的銅蝕刻劑49-1，其係選擇性地蝕刻去掉銅同時留下實質不受影響的經回焊焊料凸塊106及經固化之熱固性材料208。在另一具體實施例中，支撐基板200由有薄層204的塊材基板206形成，例如金屬或塑料。在塊材基板206為塑料時，溶劑可用來移除塊材基板206，接著濕蝕刻以移除薄層204。在這兩種方式下，支撐基板200的移除暴露包含經回焊焊料凸塊106及至少部份固化熱固性材料208的平坦前側接合面140。在許多具體實施例中，熱固性材料208在移除支撐基板200之前已完全固化。
在移除支撐基板200後，可切單形成於基板(即裝置晶圓100)上的多個結構，然後可能或不再加工以形成晶片500，然後可整合於3D封裝結構。例如，可進一步加工該等結構以包含在平坦前側接合面140或背表面104上面的增層結構。示範3D封裝結構圖示於第5圖，其中可堆疊含有根據本發明之具體實施例形成之TSV的一或更多晶片500於基板600上，例如印刷電路板或疊合基板，以及用焊接元件502連接。
第6圖根據本發明之一具體實施例圖示電腦系統。系統690包含處理器610、記憶體裝置620、記憶體控制器630、圖形控制器640、輸入及輸出(I/O)控制器650、顯示 器652、鍵盤654、指向裝置656、以及周邊裝置658，在有些具體實施例中，它們都通過匯流排660可相互通訊耦合。處理器610可為通用處理器或特殊應用積體電路(ASIC)。I/O控制器650可包含有線或無線通訊用的通訊模組。記憶體裝置620可為動態隨機存取記憶體(DRAM)元件，靜態隨機存取記憶體(SRAM)元件、快閃記憶體元件、或該等記憶體元件的組合。因此，在一些具體實施例中，系統690的記憶體裝置620不必包含DRAM裝置。
系統690的組件中之一或更多可內含於及/或可包含一或更多積體電路封裝件，例如第5圖的晶片500或3D封裝結構。例如，處理器610，或記憶體裝置620，或至少部份I/O控制器650，或該等組件的組合可內含於包括描述於各種具體實施例之至少一結構實施例的積體電路封裝件。
該等元件係執行本技藝所習知的功能。特別是，在有些情況下，記憶體裝置620可用來長期儲存用於形成本發明具體實施例之封裝件結構之方法的可執行指令，以及在其他具體實施例中，在處理器610執行期間可用來短期儲存用於形成本發明具體實施例之封裝件結構之方法的可執行指令。此外，該等指令可儲存於或以其他方式與該系統可通訊耦合的機械可存取媒體，例如唯讀記憶光碟(CD-ROM)、數位多用途光碟(DVD)、及軟碟、載波、及/或其他傳播信號。在一具體實施例中，記憶體裝置620可供給可執行指令給處理器610執行。
系統690可包含電腦(例如，桌上型、膝上型、手持式、伺服器、網路工具、路由器等等)，無線通訊裝置(例如，手機、無線電話、呼叫器、個人數位助理等等)，電腦相關週邊(例如，列表機、掃描器、監視器等等)，娛樂裝置(例如，電視、收音機、音響、磁帶及光碟播放器、視頻錄影機、數位攝影機、數位相機、MP3(動態影像壓縮標準，音頻層面3)播放器、遊戲機、手錶等等)，諸如此類。
雖已用結構特徵及/或方法動作特有之語言描述本發明，然而應瞭解，定義於隨附申請專利範圍的本發明不必受限於所述之特定特徵或動作。反而，應瞭解經揭示之特定特徵或動作是要作為本發明的特別較佳實施例用以圖解說明本發明。
100‧‧‧裝置晶圓
102‧‧‧前表面
104‧‧‧背表面
106‧‧‧焊料凸塊
108‧‧‧導電墊
112‧‧‧金屬化結構
113‧‧‧鈍化層
114‧‧‧絕緣體層
116‧‧‧(SOI)結構
118‧‧‧塊材基板
120‧‧‧通孔
122‧‧‧銅
124‧‧‧絕緣層
126‧‧‧阻障層
130‧‧‧鈍化膜或膜堆疊
140‧‧‧平坦前側接合面
200‧‧‧支撐基板
202‧‧‧平坦潤濕表面
204‧‧‧層
206‧‧‧塊材基板
208‧‧‧熱固性材料層
500‧‧‧晶片
502‧‧‧焊接元件
600‧‧‧基板
610‧‧‧處理器
620‧‧‧記憶體裝置
630‧‧‧記憶體控制器
640‧‧‧圖形控制器
650‧‧‧輸入及輸出(I/O)控制器
652‧‧‧顯示器
654‧‧‧鍵盤
656‧‧‧指向裝置
658‧‧‧周邊裝置
660‧‧‧匯流排
690‧‧‧系統
第1圖的剖面側視圖根據本發明之具體實施例圖示在接合至支撐基板之前的反置裝置晶圓。
第2圖的剖面側視圖根據本發明之具體實施例圖示接合至支撐基板的反置裝置晶圓。
第3圖的剖面側視圖根據本發明之具體實施例圖示接合至支撐基板之反置裝置晶圓的後通孔加工。
第4圖的剖面側視圖根據本發明之具體實施例圖示在支撐基板移除後的已加工裝置晶圓。
第5圖的側視圖根據本發明之具體實施例圖示實現TSV的3D封裝件。
第6圖為根據本發明之具體實施例的系統。
100‧‧‧裝置晶圓
102‧‧‧正前表面
104‧‧‧背表面
106‧‧‧焊料凸塊
108‧‧‧導電墊
112‧‧‧金屬化結構
113‧‧‧鈍化層
114‧‧‧絕緣體層
116‧‧‧(SOI)結構
118‧‧‧塊材基板
200‧‧‧支撐基板
202‧‧‧平坦潤濕表面
204‧‧‧層
206‧‧‧塊材基板
208‧‧‧熱固性材料層

Claims (20)

  1. 一種晶片結構，其係包含：一半導體基板，其具有一前表面、一背表面、以及在該背表面及該前表面之間延伸穿過該半導體基板的一通孔；形成於該前表面上方的一經回焊焊料凸塊；以及形成於該前表面上方以及於該經回焊焊料凸塊四周的一經固化之熱固性材料，其中該經固化之熱固性材料與該經回焊焊料凸塊形成一被暴露之平坦的前側接合面。
  2. 如申請專利範圍第1項之結構，其中該通孔包含銅。
  3. 如申請專利範圍第1項之結構，其中該經固化之熱固性材料係選自於由下列各物組成之群組：經固化之環氧樹脂、經固化之酚醛樹脂、經固化之聚亞醯胺、以及經固化之聚苯并噁唑(PBO)。
  4. 一種3D封裝結構，其係包含：一基板；一晶片，其係包含：一半導體基板，其具有一前表面、一背表面、以及在該背表面及該前表面之間延伸穿過該半導體基板的一通孔；形成於該前表面上方的一經回焊焊料凸塊；以及形成於該前表面上方以及於該經回焊焊料凸 塊四周的一經固化之熱固性材料，其中該經固化之熱固性材料與該經回焊焊料凸塊形成一被暴露之平坦的前側接合面；其中該平坦的前側接合面係被附著至該基板。
  5. 如申請專利範圍第4項之3D封裝結構，其更包含堆疊於該晶片上方的一另一晶片。
  6. 如申請專利範圍第5項之3D封裝結構，其更包含含有可通訊地耦合至該3D封裝結構之一匯流排的一系統。
  7. 一種用以形成一封裝結構之方法，其係包含下列步驟：提供一裝置晶圓，其係包括一前表面與形成於該前表面上方的一焊料凸塊；提供包括一平坦潤濕表面的一支撐基板，其中在該平坦潤濕表面上形成一層之熱固性材料；使該裝置晶圓在熱及壓力下接合至該支撐基板，其中該接合步驟包括：以該焊料凸塊穿透該層之熱固性材料；潤濕與該焊料凸塊一起之該平坦潤濕表面同時回焊該焊料凸塊；以及至少部份地將該熱固性材料固化；以及移除該支撐基板以暴露包括經回焊之該焊料凸塊及至少部份地經固化之該熱固性材料的一平坦的前側接合面。
  8. 如申請專利範圍第7項之方法，其更包含：在使該裝置晶圓接合至該支撐基板之後，形成在該裝置晶圓之該前 表面及一背表面之間延伸的一通孔。
  9. 如申請專利範圍第8項之方法，其係包含：在移除該支撐基板之前，形成該通孔。
  10. 如申請專利範圍第8項之方法，其係包含：在使該裝置晶圓接合至該支撐基板之後，以及在形成該通孔之前，研磨或拋光該裝置晶圓的一背表面，以減少該裝置晶圓的厚度。
  11. 如申請專利範圍第8項之方法，其中該平坦潤濕表面包含選自於由以下各物組成之群組的材料：鎳、金、鉑、鈀、鈷、銅、鐵及鋼。
  12. 如申請專利範圍第8項之方法，其中該支撐基板包含一塊材基板以及包含該平坦潤濕表面的一塗層。
  13. 如申請專利範圍第7項之方法，其更包含：在使該裝置晶圓接合至該支撐基板之前，形成在該裝置晶圓之該前表面及一背表面之間延伸的一通孔。
  14. 如申請專利範圍第7項之方法，其中該平坦潤濕表面包含選自於由以下各物組成之群組的材料：鎳、金、鉑、鈀、鈷、銅、鐵及鋼。
  15. 如申請專利範圍第14項之方法，其中該支撐基板為一塊材基板。
  16. 如申請專利範圍第15項之方法，其中該塊材基板為銅。
  17. 如申請專利範圍第14項之方法，其中該支撐基板包含一塊材基板以及包含該平坦潤濕表面的一塗層。
  18. 如申請專利範圍第7項之方法，其更包括將該層之熱固 性材料旋塗或疊合於該支撐基板之該平坦潤濕表面上。
  19. 如申請專利範圍第18項之方法，其中在使該裝置晶圓接合至該支撐基板之前，該層之熱固性材料係經b階固化。
  20. 如申請專利範圍第7項之方法，其更包含下列步驟：使第一晶粒附著至該平坦的前側接合面；以及使第二晶粒附著至該裝置晶圓的一背表面。
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