TW200942966A - Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device - Google Patents

Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device

Info

Publication number
TW200942966A
TW200942966A TW097143505A TW97143505A TW200942966A TW 200942966 A TW200942966 A TW 200942966A TW 097143505 A TW097143505 A TW 097143505A TW 97143505 A TW97143505 A TW 97143505A TW 200942966 A TW200942966 A TW 200942966A
Authority
TW
Taiwan
Prior art keywords
positive
resin composition
photosensitive resin
type photosensitive
resist pattern
Prior art date
Application number
TW097143505A
Other languages
English (en)
Other versions
TWI396043B (zh
Inventor
Hiroshi Matsutani
Takumi Ueno
Alexandre Nicolas
Ken Nanaumi
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200942966A publication Critical patent/TW200942966A/zh
Application granted granted Critical
Publication of TWI396043B publication Critical patent/TWI396043B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
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    • H01L2224/0502—Disposition
    • H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05024—Disposition the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
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    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
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    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10125—Reinforcing structures
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW097143505A 2007-11-12 2008-11-11 A positive-type photosensitive resin composition, a manufacturing method of a photoresist pattern, a semiconductor device, and an electronic device TWI396043B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007293631 2007-11-12

Publications (2)

Publication Number Publication Date
TW200942966A true TW200942966A (en) 2009-10-16
TWI396043B TWI396043B (zh) 2013-05-11

Family

ID=40638659

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097143505A TWI396043B (zh) 2007-11-12 2008-11-11 A positive-type photosensitive resin composition, a manufacturing method of a photoresist pattern, a semiconductor device, and an electronic device

Country Status (8)

Country Link
US (1) US9786576B2 (zh)
EP (1) EP2221666B1 (zh)
JP (1) JP4770985B2 (zh)
KR (1) KR101210060B1 (zh)
CN (1) CN101855596B (zh)
PT (1) PT2221666E (zh)
TW (1) TWI396043B (zh)
WO (1) WO2009063808A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI405040B (zh) * 2010-10-01 2013-08-11 Chi Mei Corp A positive-type photosensitive resin composition, and a method of forming a pattern
TWI754342B (zh) * 2014-07-18 2022-02-01 日商積水化學工業股份有限公司 半導體元件保護用材料及半導體裝置
TWI781171B (zh) * 2017-05-10 2022-10-21 日商昭和電工材料股份有限公司 正型感光性樹脂組成物、圖案硬化膜及其製造方法、半導體元件以及電子裝置

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444749B2 (ja) * 2008-02-25 2014-03-19 日立化成株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
JP5447384B2 (ja) * 2008-09-04 2014-03-19 日立化成株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
JP5356935B2 (ja) * 2009-07-02 2013-12-04 太陽ホールディングス株式会社 光硬化性熱硬化性樹脂組成物、そのドライフィルム及び硬化物並びにそれらを用いたプリント配線板
US10373870B2 (en) 2010-02-16 2019-08-06 Deca Technologies Inc. Semiconductor device and method of packaging
US9576919B2 (en) 2011-12-30 2017-02-21 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
US9177926B2 (en) 2011-12-30 2015-11-03 Deca Technologies Inc Semiconductor device and method comprising thickened redistribution layers
US8922021B2 (en) 2011-12-30 2014-12-30 Deca Technologies Inc. Die up fully molded fan-out wafer level packaging
JP4844695B2 (ja) * 2010-04-28 2011-12-28 Ｊｓｒ株式会社 吐出ノズル式塗布法用ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
EP2618216B1 (en) * 2010-09-16 2019-05-29 Hitachi Chemical Co., Ltd. Positive photosensitive resin composition, method of creating resist pattern, and electronic component
JP5573961B2 (ja) * 2010-12-16 2014-08-20 日立化成株式会社 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP6228460B2 (ja) * 2011-12-09 2017-11-08 旭化成株式会社 感光性樹脂組成物
US10672624B2 (en) 2011-12-30 2020-06-02 Deca Technologies Inc. Method of making fully molded peripheral package on package device
US9831170B2 (en) 2011-12-30 2017-11-28 Deca Technologies, Inc. Fully molded miniaturized semiconductor module
WO2013102146A1 (en) 2011-12-30 2013-07-04 Deca Technologies, Inc. Die up fully molded fan-out wafer level packaging
US9613830B2 (en) 2011-12-30 2017-04-04 Deca Technologies Inc. Fully molded peripheral package on package device
US10050004B2 (en) 2015-11-20 2018-08-14 Deca Technologies Inc. Fully molded peripheral package on package device
WO2013118680A1 (ja) * 2012-02-07 2013-08-15 日立化成株式会社 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
JP2013228416A (ja) * 2012-04-24 2013-11-07 Hitachi Chemical Co Ltd ポジ型感光性樹脂組成物及びこれを用いた感光性フィルム
JP6301249B2 (ja) * 2012-06-12 2018-03-28 株式会社Adeka 感光性組成物
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