TW200933933A - Group III nitride semiconductor light emitting device, method of manufacturing thereof, and lamps using the same - Google Patents

Group III nitride semiconductor light emitting device, method of manufacturing thereof, and lamps using the same Download PDF

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Publication number
TW200933933A
TW200933933A TW097136316A TW97136316A TW200933933A TW 200933933 A TW200933933 A TW 200933933A TW 097136316 A TW097136316 A TW 097136316A TW 97136316 A TW97136316 A TW 97136316A TW 200933933 A TW200933933 A TW 200933933A
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TW
Taiwan
Prior art keywords
layer
buffer layer
nitride semiconductor
light
group iii
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TW097136316A
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English (en)
Chinese (zh)
Inventor
Yasunori Yokoyama
Hisayuki Miki
Original Assignee
Showa Denko Kk
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Publication date
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Publication of TW200933933A publication Critical patent/TW200933933A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Physical Vapour Deposition (AREA)
TW097136316A 2007-09-27 2008-09-22 Group III nitride semiconductor light emitting device, method of manufacturing thereof, and lamps using the same TW200933933A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007251478A JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Publications (1)

Publication Number Publication Date
TW200933933A true TW200933933A (en) 2009-08-01

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Family Applications (1)

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TW097136316A TW200933933A (en) 2007-09-27 2008-09-22 Group III nitride semiconductor light emitting device, method of manufacturing thereof, and lamps using the same

Country Status (7)

Country Link
US (1) US20100219445A1 (https=)
EP (1) EP2200099A4 (https=)
JP (1) JP2009081406A (https=)
KR (1) KR20100049123A (https=)
CN (1) CN101874306A (https=)
TW (1) TW200933933A (https=)
WO (1) WO2009041256A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104851949A (zh) * 2014-02-19 2015-08-19 丰田合成株式会社 用于制造第iii族氮化物半导体发光器件的方法

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5272390B2 (ja) * 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
WO2011037251A1 (ja) * 2009-09-28 2011-03-31 株式会社トクヤマ 積層体の製造方法
KR101178505B1 (ko) * 2009-11-03 2012-09-07 주식회사루미지엔테크 반도체 기판과 이의 제조 방법
CN102597340B (zh) * 2009-11-10 2015-04-08 株式会社德山 叠层体的制造方法
EP2544250B1 (en) * 2010-03-01 2020-01-08 Sharp Kabushiki Kaisha Process for production of nitride semiconductor element, nitride semiconductor light-emitting element, and light-emitting device
DE102010035489A1 (de) * 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelement
KR20120032329A (ko) * 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8409895B2 (en) * 2010-12-16 2013-04-02 Applied Materials, Inc. Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
JP5879225B2 (ja) * 2011-08-22 2016-03-08 住友化学株式会社 窒化物半導体テンプレート及び発光ダイオード
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
KR20130067610A (ko) * 2011-12-14 2013-06-25 한국전자통신연구원 도파로형 광 혼합기
JP2013145867A (ja) * 2011-12-15 2013-07-25 Hitachi Cable Ltd 窒化物半導体テンプレート及び発光ダイオード
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
DE102012103686B4 (de) 2012-04-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat
KR20130128931A (ko) * 2012-05-18 2013-11-27 삼성전자주식회사 Ｎ형 알루미늄 갈륨 나이트라이드 박막 및 자외선 발광소자
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
JP6522521B2 (ja) 2013-02-15 2019-05-29 トランスフォーム インコーポレーテッド 半導体デバイスの電極及びその製造方法
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9929310B2 (en) * 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
CN105190842B (zh) * 2013-03-14 2017-07-28 佳能安内华股份有限公司 成膜方法、半导体发光元件的制造方法、半导体发光元件和照明装置
US9245992B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
KR102075543B1 (ko) * 2013-05-06 2020-02-11 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
TWI536606B (zh) * 2013-12-25 2016-06-01 新世紀光電股份有限公司 發光二極體結構
DE102014101966A1 (de) * 2014-02-17 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines elektronischen Halbleiterchips und elektronischer Halbleiterchip
JP2015176936A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9608103B2 (en) 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
JP6375890B2 (ja) 2014-11-18 2018-08-22 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
TWI568016B (zh) * 2014-12-23 2017-01-21 錼創科技股份有限公司 半導體發光元件
CN104701432A (zh) * 2015-03-20 2015-06-10 映瑞光电科技(上海)有限公司 GaN 基LED 外延结构及其制备方法
KR102010401B1 (ko) * 2015-10-27 2019-08-14 주식회사 엘지화학 유기발광소자
CN105633233B (zh) * 2015-12-31 2018-01-12 华灿光电(苏州）有限公司 AlN模板、AlN模板的制备方法及AlN模板上的半导体器件
CN105633223B (zh) * 2015-12-31 2018-10-09 华灿光电(苏州）有限公司 AlGaN模板、AlGaN模板的制备方法及AlGaN模板上的半导体器件
US11322599B2 (en) 2016-01-15 2022-05-03 Transphorm Technology, Inc. Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
CN105755536B (zh) * 2016-02-06 2019-04-26 上海新傲科技股份有限公司 一种采用AlON缓冲层的氮化物的外延生长技术
CN105590839B (zh) * 2016-03-22 2018-09-14 安徽三安光电有限公司 氮化物底层、发光二极管及底层制备方法
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
TWI703726B (zh) * 2016-09-19 2020-09-01 新世紀光電股份有限公司 含氮半導體元件
CN109841708B (zh) * 2017-11-28 2022-05-31 中国科学院半导体研究所 半导体器件及其制备方法
JP7555470B1 (ja) 2023-12-07 2024-09-24 日機装株式会社 窒化物半導体発光素子
CN118472152B (zh) * 2024-07-12 2024-09-17 诺视科技(浙江)有限公司 集成反射穹顶的微显示器件及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039819A (ja) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の作製方法
JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPS6365917A (ja) 1986-09-06 1988-03-24 Kurita Mach Mfg Co Ltd 濾過ユニット
JPH088217B2 (ja) 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JP3456404B2 (ja) * 1997-10-10 2003-10-14 豊田合成株式会社 半導体素子
JPH11200031A (ja) * 1997-12-25 1999-07-27 Applied Materials Inc スパッタリング装置及びその高速真空排気方法
JP3440873B2 (ja) 1999-03-31 2003-08-25 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP3700492B2 (ja) * 1999-09-21 2005-09-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
JP4613373B2 (ja) * 1999-07-19 2011-01-19 ソニー株式会社 Ｉｉｉ族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法
JP3994623B2 (ja) * 2000-04-21 2007-10-24 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US6787814B2 (en) * 2000-06-22 2004-09-07 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device and production method thereof
ATE528421T1 (de) * 2000-11-30 2011-10-15 Univ North Carolina State Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien
JP2004179457A (ja) * 2002-11-28 2004-06-24 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP4468744B2 (ja) 2004-06-15 2010-05-26 日本電信電話株式会社 窒化物半導体薄膜の作製方法
JP2007251478A (ja) 2006-03-15 2007-09-27 Matsushita Electric Ind Co Ltd 確率的演算素子及びこれを用いた確率的演算装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104851949A (zh) * 2014-02-19 2015-08-19 丰田合成株式会社 用于制造第iii族氮化物半导体发光器件的方法

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Publication number Publication date
EP2200099A4 (en) 2016-03-23
EP2200099A1 (en) 2010-06-23
JP2009081406A (ja) 2009-04-16
KR20100049123A (ko) 2010-05-11
WO2009041256A1 (ja) 2009-04-02
CN101874306A (zh) 2010-10-27
US20100219445A1 (en) 2010-09-02

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