TW200839878A - Semiconductor device cu wiring and method for manufacturing the same - Google Patents

Semiconductor device cu wiring and method for manufacturing the same Download PDF

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Publication number
TW200839878A
TW200839878A TW096144764A TW96144764A TW200839878A TW 200839878 A TW200839878 A TW 200839878A TW 096144764 A TW096144764 A TW 096144764A TW 96144764 A TW96144764 A TW 96144764A TW 200839878 A TW200839878 A TW 200839878A
Authority
TW
Taiwan
Prior art keywords
layer
wiring
adhesion
width
tan
Prior art date
Application number
TW096144764A
Other languages
English (en)
Chinese (zh)
Inventor
Hirotaka Ito
Takashi Onishi
Mikako Takeda
Masao Mizuno
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of TW200839878A publication Critical patent/TW200839878A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H10W20/4424—Copper alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW096144764A 2006-11-28 2007-11-26 Semiconductor device cu wiring and method for manufacturing the same TW200839878A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006320572 2006-11-28
JP2007267180A JP4896850B2 (ja) 2006-11-28 2007-10-12 半導体装置のＣｕ配線およびその製造方法

Publications (1)

Publication Number Publication Date
TW200839878A true TW200839878A (en) 2008-10-01

Family

ID=39660609

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144764A TW200839878A (en) 2006-11-28 2007-11-26 Semiconductor device cu wiring and method for manufacturing the same

Country Status (3)

Country Link
US (1) US20100052171A1 (https=)
JP (2) JP4896850B2 (https=)
TW (1) TW200839878A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090186230A1 (en) * 2007-10-24 2009-07-23 H.C. Starck Inc. Refractory metal-doped sputtering targets, thin films prepared therewith and electronic device elements containing such films
JP5384269B2 (ja) * 2009-09-18 2014-01-08 東京エレクトロン株式会社 Ｃｕ配線の形成方法
JP5213146B1 (ja) * 2012-10-03 2013-06-19 田中電子工業株式会社 半導体装置接続用銅ロジウム合金細線
US9355864B2 (en) * 2013-08-06 2016-05-31 Tel Nexx, Inc. Method for increasing adhesion of copper to polymeric surfaces

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3040745B2 (ja) * 1998-01-12 2000-05-15 松下電子工業株式会社 半導体装置及びその製造方法
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
JP3631392B2 (ja) * 1998-11-02 2005-03-23 株式会社神戸製鋼所 配線膜の形成方法
JP2000311897A (ja) * 1999-04-26 2000-11-07 Ebara Corp 配線の形成方法
JP4428832B2 (ja) * 1999-08-27 2010-03-10 富士通株式会社 金属配線構造、半導体装置及び半導体装置の製造方法
US20020086520A1 (en) * 2001-01-02 2002-07-04 Advanced Semiconductor Engineering Inc. Semiconductor device having bump electrode
JP2005528776A (ja) * 2001-09-26 2005-09-22 アプライド　マテリアルズ　インコーポレイテッド バリア層とシード層の一体化
JP4052868B2 (ja) * 2002-04-26 2008-02-27 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP2004193552A (ja) * 2002-10-17 2004-07-08 Mitsubishi Materials Corp 半導体装置配線シード層形成用銅合金スパッタリングターゲット
JP2004193553A (ja) * 2002-10-17 2004-07-08 Mitsubishi Materials Corp 半導体装置配線シード層形成用銅合金スパッタリングターゲットおよびこのターゲットを用いて形成したシード層
JP4647184B2 (ja) * 2002-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4152202B2 (ja) * 2003-01-24 2008-09-17 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP4266360B2 (ja) * 2004-07-26 2009-05-20 株式会社神戸製鋼所 半導体装置のＣｕ系配線形成方法
JP2006148089A (ja) * 2004-10-22 2006-06-08 Tokyo Electron Ltd 成膜方法
US20060121307A1 (en) * 2004-10-22 2006-06-08 Tokyo Electron Limited Film deposition method

Also Published As

Publication number Publication date
JP2008288574A (ja) 2008-11-27
JP4896850B2 (ja) 2012-03-14
US20100052171A1 (en) 2010-03-04
JP2008160067A (ja) 2008-07-10

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