TW200802706A - Structure and method of forming electrodeposited contacts - Google Patents
Structure and method of forming electrodeposited contactsInfo
- Publication number
- TW200802706A TW200802706A TW096107842A TW96107842A TW200802706A TW 200802706 A TW200802706 A TW 200802706A TW 096107842 A TW096107842 A TW 096107842A TW 96107842 A TW96107842 A TW 96107842A TW 200802706 A TW200802706 A TW 200802706A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- cavities
- contact
- iridium
- rhodium
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/308,433 US7405154B2 (en) | 2006-03-24 | 2006-03-24 | Structure and method of forming electrodeposited contacts |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200802706A true TW200802706A (en) | 2008-01-01 |
Family
ID=38532497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096107842A TW200802706A (en) | 2006-03-24 | 2007-03-07 | Structure and method of forming electrodeposited contacts |
Country Status (5)
Country | Link |
---|---|
US (3) | US7405154B2 (zh) |
JP (1) | JP5284944B2 (zh) |
CN (1) | CN101395720A (zh) |
TW (1) | TW200802706A (zh) |
WO (1) | WO2007112361A2 (zh) |
Cited By (2)
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---|---|---|---|---|
TWI497643B (zh) * | 2010-01-07 | 2015-08-21 | Ibm | 用於半導體裝置的超填隙金屬接觸貫穿孔 |
TWI769133B (zh) * | 2015-06-03 | 2022-07-01 | 美商英特爾股份有限公司 | 在導電連接件的形成中使用貴金屬 |
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US7407875B2 (en) * | 2006-09-06 | 2008-08-05 | International Business Machines Corporation | Low resistance contact structure and fabrication thereof |
DE102006056620B4 (de) * | 2006-11-30 | 2010-04-08 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterstruktur und Verfahren zu ihrer Herstellung |
FR2914783A1 (fr) * | 2007-04-03 | 2008-10-10 | St Microelectronics Sa | Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant. |
US8372744B2 (en) | 2007-04-20 | 2013-02-12 | International Business Machines Corporation | Fabricating a contact rhodium structure by electroplating and electroplating composition |
JP2009010037A (ja) * | 2007-06-26 | 2009-01-15 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2009064803A (ja) * | 2007-09-04 | 2009-03-26 | Renesas Technology Corp | 半導体装置 |
KR100924865B1 (ko) * | 2007-12-27 | 2009-11-02 | 주식회사 동부하이텍 | 반도체 소자의 금속배선 형성방법 |
CN101911257B (zh) * | 2008-01-23 | 2012-03-07 | 日矿金属株式会社 | 在阻挡层上具有钌电镀层的ulsi微细配线构件 |
US7843067B2 (en) * | 2008-03-24 | 2010-11-30 | International Business Machines Corporation | Method and structure of integrated rhodium contacts with copper interconnects |
MX2010014396A (es) * | 2008-06-18 | 2011-06-17 | Massachusetts Inst Technology | Materiales cataliticos, electrodos y sistemas para la electrolisis de agua y otras tecnicas electroquimicas. |
KR101088813B1 (ko) * | 2008-07-25 | 2011-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 및 그 형성방법 |
US7928569B2 (en) * | 2008-08-14 | 2011-04-19 | International Business Machines Corporation | Redundant barrier structure for interconnect and wiring applications, design structure and method of manufacture |
JP2010186877A (ja) | 2009-02-12 | 2010-08-26 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
US8336204B2 (en) * | 2009-07-27 | 2012-12-25 | International Business Machines Corporation | Formation of alloy liner by reaction of diffusion barrier and seed layer for interconnect application |
EP2470690A2 (en) * | 2009-08-27 | 2012-07-04 | Sun Catalytix Corporation | Compositions, electrodes, methods and systems for water electrolysis and other electrochemical techniques |
US20110097589A1 (en) * | 2009-10-28 | 2011-04-28 | General Electric Company | Article for high temperature service |
US8492899B2 (en) * | 2010-10-14 | 2013-07-23 | International Business Machines Corporation | Method to electrodeposit nickel on silicon for forming controllable nickel silicide |
US20120097547A1 (en) * | 2010-10-25 | 2012-04-26 | Universiteit Gent | Method for Copper Electrodeposition |
US8779589B2 (en) * | 2010-12-20 | 2014-07-15 | Intel Corporation | Liner layers for metal interconnects |
US8518819B2 (en) * | 2011-03-16 | 2013-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device contact structures and methods for making the same |
US9337363B2 (en) | 2011-05-11 | 2016-05-10 | International Business Machines Corporation | Low resistance, low reflection, and low cost contact grids for photovoltaic cells |
US8435887B2 (en) * | 2011-06-02 | 2013-05-07 | International Business Machines Corporation | Copper interconnect formation |
US8518818B2 (en) | 2011-09-16 | 2013-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reverse damascene process |
US8648465B2 (en) * | 2011-09-28 | 2014-02-11 | International Business Machines Corporation | Semiconductor interconnect structure having enhanced performance and reliability |
US8659156B2 (en) * | 2011-10-18 | 2014-02-25 | International Business Machines Corporation | Interconnect structure with an electromigration and stress migration enhancement liner |
US9252050B2 (en) * | 2012-09-11 | 2016-02-02 | International Business Machines Corporation | Method to improve semiconductor surfaces and polishing |
US8609531B1 (en) | 2013-03-06 | 2013-12-17 | Globalfoundries Inc. | Methods of selectively forming ruthenium liner layer |
US9171801B2 (en) | 2013-05-09 | 2015-10-27 | Globalfoundries U.S. 2 Llc | E-fuse with hybrid metallization |
US9536830B2 (en) | 2013-05-09 | 2017-01-03 | Globalfoundries Inc. | High performance refractory metal / copper interconnects to eliminate electromigration |
US9305879B2 (en) | 2013-05-09 | 2016-04-05 | Globalfoundries Inc. | E-fuse with hybrid metallization |
US9601431B2 (en) | 2014-02-05 | 2017-03-21 | Applied Materials, Inc. | Dielectric/metal barrier integration to prevent copper diffusion |
JP6667215B2 (ja) * | 2014-07-24 | 2020-03-18 | キヤノン株式会社 | X線遮蔽格子、構造体、トールボット干渉計、x線遮蔽格子の製造方法 |
US9960240B2 (en) * | 2015-10-21 | 2018-05-01 | International Business Machines Corporation | Low resistance contact structures for trench structures |
US10304773B2 (en) | 2015-10-21 | 2019-05-28 | International Business Machines Corporation | Low resistance contact structures including a copper fill for trench structures |
US9449884B1 (en) | 2015-12-15 | 2016-09-20 | International Business Machines Corporation | Semiconductor device with trench epitaxy and contact |
US9640482B1 (en) * | 2016-04-13 | 2017-05-02 | United Microelectronics Corp. | Semiconductor device with a contact plug and method of fabricating the same |
US9842770B1 (en) | 2016-06-22 | 2017-12-12 | International Business Machines Corporation | Reflow enhancement layer for metallization structures |
US10522467B2 (en) * | 2016-07-06 | 2019-12-31 | Tokyo Electron Limited | Ruthenium wiring and manufacturing method thereof |
JP6785130B2 (ja) * | 2016-07-06 | 2020-11-18 | 東京エレクトロン株式会社 | ルテニウム配線およびその製造方法 |
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US10763207B2 (en) | 2017-11-21 | 2020-09-01 | Samsung Electronics Co., Ltd. | Interconnects having long grains and methods of manufacturing the same |
JP7369797B2 (ja) * | 2020-01-31 | 2023-10-26 | 富士フイルム株式会社 | 金属充填微細構造体の製造方法 |
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-
2006
- 2006-03-24 US US11/308,433 patent/US7405154B2/en active Active
-
2007
- 2007-03-07 TW TW096107842A patent/TW200802706A/zh unknown
- 2007-03-26 JP JP2009501763A patent/JP5284944B2/ja not_active Expired - Fee Related
- 2007-03-26 CN CNA2007800078269A patent/CN101395720A/zh active Pending
- 2007-03-26 WO PCT/US2007/064946 patent/WO2007112361A2/en active Application Filing
-
2008
- 2008-05-30 US US12/130,381 patent/US7851357B2/en active Active
-
2010
- 2010-12-14 US US12/967,633 patent/US8089157B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497643B (zh) * | 2010-01-07 | 2015-08-21 | Ibm | 用於半導體裝置的超填隙金屬接觸貫穿孔 |
TWI769133B (zh) * | 2015-06-03 | 2022-07-01 | 美商英特爾股份有限公司 | 在導電連接件的形成中使用貴金屬 |
TWI795072B (zh) * | 2015-06-03 | 2023-03-01 | 美商英特爾股份有限公司 | 在導電連接件的形成中使用貴金屬 |
Also Published As
Publication number | Publication date |
---|---|
US20110084393A1 (en) | 2011-04-14 |
CN101395720A (zh) | 2009-03-25 |
WO2007112361A2 (en) | 2007-10-04 |
US20090014878A1 (en) | 2009-01-15 |
US20070222066A1 (en) | 2007-09-27 |
WO2007112361A3 (en) | 2008-04-10 |
JP5284944B2 (ja) | 2013-09-11 |
US7851357B2 (en) | 2010-12-14 |
JP2009531838A (ja) | 2009-09-03 |
US7405154B2 (en) | 2008-07-29 |
US8089157B2 (en) | 2012-01-03 |
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