TW200742097A - Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix - Google Patents

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix

Info

Publication number
TW200742097A
TW200742097A TW095146993A TW95146993A TW200742097A TW 200742097 A TW200742097 A TW 200742097A TW 095146993 A TW095146993 A TW 095146993A TW 95146993 A TW95146993 A TW 95146993A TW 200742097 A TW200742097 A TW 200742097A
Authority
TW
Taiwan
Prior art keywords
quantum dots
quantum
tunneling barrier
photosensitive device
inorganic matrix
Prior art date
Application number
TW095146993A
Other languages
English (en)
Chinese (zh)
Inventor
Stephen R Forrest
Original Assignee
Univ Princeton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton filed Critical Univ Princeton
Publication of TW200742097A publication Critical patent/TW200742097A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
TW095146993A 2005-12-16 2006-12-15 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix TW200742097A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/304,713 US20070137693A1 (en) 2005-12-16 2005-12-16 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix

Publications (1)

Publication Number Publication Date
TW200742097A true TW200742097A (en) 2007-11-01

Family

ID=38172023

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146993A TW200742097A (en) 2005-12-16 2006-12-15 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix

Country Status (8)

Country Link
US (1) US20070137693A1 (https=)
EP (1) EP1974393A2 (https=)
JP (1) JP5441414B2 (https=)
KR (1) KR101335193B1 (https=)
CN (1) CN101375407B (https=)
AR (1) AR057251A1 (https=)
TW (1) TW200742097A (https=)
WO (1) WO2007120229A2 (https=)

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DE102007043215A1 (de) * 2007-09-11 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Anordnung mit optisch aktiver Glaskeramik
KR101460395B1 (ko) * 2007-12-13 2014-11-21 테크니온 리서치 엔드 디벨로프먼트 화운데이션 엘티디. 4-6족 반도체 코어-쉘 나노결정을 포함하는 광기전 셀
ITRM20070652A1 (it) * 2007-12-17 2009-06-18 Genefinity S R L Metodo per la realizzazione di un materiale fotovoltaico
US8105322B2 (en) * 2008-03-11 2012-01-31 Shaser, Inc. Replacement cartridges for light-based dermatologic treatment devices
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
JP4459286B2 (ja) * 2008-08-08 2010-04-28 防衛省技術研究本部長 赤外線検知器
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP4673398B2 (ja) * 2008-10-22 2011-04-20 防衛省技術研究本部長 量子ドット型赤外線検知素子
JP5423952B2 (ja) * 2009-03-04 2014-02-19 セイコーエプソン株式会社 光電変換装置および電子機器
JP5229122B2 (ja) * 2009-06-11 2013-07-03 トヨタ自動車株式会社 光電変換素子
WO2011000055A1 (en) * 2009-07-03 2011-01-06 Newsouth Innovations Pty Limited Hot carrier energy conversion structure and method of fabricating the same
ES2558965T3 (es) 2009-07-23 2016-02-09 Toyota Jidosha Kabushiki Kaisha Elemento de conversión fotoeléctrica
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
JP2011100915A (ja) * 2009-11-09 2011-05-19 Toyota Motor Corp 光電変換素子
JP2011176225A (ja) * 2010-02-25 2011-09-08 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
KR101727204B1 (ko) * 2010-10-07 2017-04-14 구엘라 테크놀로지 가부시키가이샤 태양 전지
KR101605765B1 (ko) * 2010-10-07 2016-03-24 구엘라 테크놀로지 가부시키가이샤 이차 전지
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5555602B2 (ja) * 2010-10-25 2014-07-23 シャープ株式会社 太陽電池
ES2369300B2 (es) * 2011-06-21 2012-09-13 Universidad Politécnica de Madrid Célula solar de banda intermedia con puntos cuánticos no tensionados.
US20130092221A1 (en) * 2011-10-14 2013-04-18 Universidad Politecnica De Madrid Intermediate band solar cell having solution-processed colloidal quantum dots and metal nanoparticles
KR101654114B1 (ko) * 2011-10-30 2016-09-05 가부시키가이샤 니혼 마이크로닉스 반복 충방전 가능한 양자 전지
JP5999887B2 (ja) * 2011-11-29 2016-09-28 シャープ株式会社 多接合型太陽電池
JP6115938B2 (ja) * 2012-02-28 2017-04-19 国立大学法人電気通信大学 量子ドットの形成方法および太陽電池
CN102593206A (zh) * 2012-03-05 2012-07-18 天津理工大学 一种耗尽型体异质结量子点太阳能电池及其制备方法
AU2013334164A1 (en) * 2012-10-26 2015-04-09 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
KR102012228B1 (ko) * 2012-12-27 2019-08-21 에스케이이노베이션 주식회사 양자점 기반 태양전지 및 이의 제조방법
JP6206834B2 (ja) * 2013-01-22 2017-10-04 国立研究開発法人情報通信研究機構 量子ドット型高速フォトダイオード
JP5880629B2 (ja) * 2014-06-24 2016-03-09 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2015005766A (ja) * 2014-08-20 2015-01-08 セイコーエプソン株式会社 光学変換装置及び同装置を含む電子機器
WO2017091269A2 (en) * 2015-08-31 2017-06-01 The Board Of Regents Of The University Of Oklahoma Semiconductor devices having matrix-embedded nano-structured materials
KR102446410B1 (ko) 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
JP6123925B2 (ja) * 2016-02-03 2017-05-10 セイコーエプソン株式会社 光電変換装置
JP6965764B2 (ja) * 2018-01-18 2021-11-10 富士通株式会社 光検出器及びその製造方法、撮像装置

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EP2295238A1 (en) * 1998-08-19 2011-03-16 The Trustees Of Princeton University Organic photosensitive optoelectronic device
US6380604B1 (en) * 2000-05-18 2002-04-30 Fujitsu Limited Quantum semiconductor device having quantum dots and optical detectors using the same
US6583436B2 (en) * 2000-06-27 2003-06-24 The Regents Of The University Of California Strain-engineered, self-assembled, semiconductor quantum dot lattices
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
WO2002082602A2 (en) * 2001-02-28 2002-10-17 The Research Foundation Of State University Of New York Semiconductor laser with reduced temperature sensitivity
US7095959B2 (en) * 2001-06-20 2006-08-22 Evident Technologies Optical time division multiplexing/demultiplexing system
EP1751805A4 (en) * 2004-04-30 2007-07-04 Newsouth Innovations Pty Ltd ARTIFICIAL AMORPH SEMICONDUCTORS AND APPLICATIONS TO SOLAR CELLS
JP2005332945A (ja) * 2004-05-19 2005-12-02 Toyota Motor Corp 太陽電池
JP4905623B2 (ja) * 2004-10-18 2012-03-28 富士通株式会社 太陽電池
US20070012355A1 (en) * 2005-07-12 2007-01-18 Locascio Michael Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material

Also Published As

Publication number Publication date
WO2007120229A2 (en) 2007-10-25
JP2009520357A (ja) 2009-05-21
US20070137693A1 (en) 2007-06-21
WO2007120229A3 (en) 2008-03-13
CN101375407A (zh) 2009-02-25
AR057251A1 (es) 2007-11-21
EP1974393A2 (en) 2008-10-01
KR101335193B1 (ko) 2013-11-29
JP5441414B2 (ja) 2014-03-12
CN101375407B (zh) 2010-08-25
KR20080085166A (ko) 2008-09-23

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