AR057251A1 - Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica - Google Patents
Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganicaInfo
- Publication number
- AR057251A1 AR057251A1 ARP060105553A ARP060105553A AR057251A1 AR 057251 A1 AR057251 A1 AR 057251A1 AR P060105553 A ARP060105553 A AR P060105553A AR P060105553 A ARP060105553 A AR P060105553A AR 057251 A1 AR057251 A1 AR 057251A1
- Authority
- AR
- Argentina
- Prior art keywords
- quantum
- barried
- photosensible
- intermediate band
- inorganic matrix
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 5
- 239000002096 quantum dot Substances 0.000 abstract 5
- 229910010272 inorganic material Inorganic materials 0.000 abstract 3
- 239000011147 inorganic material Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000005428 wave function Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Una pluralidad de puntos cuánticos comprende un primer material inorgánico, y cada punto cuántico está cubierto con un segundo material inorgánico. Los puntos cuánticos están en una matriz de un tercer material inorgánico. Al menos el primer y el tercer material son semiconductores fotoconductores. El segundo material está dispuesto como una barrera de tunelizacion para requerir al portador de carga (un electron o un agujero) en una base de la barrera de tunelizacion en el tercer material que realice un tunel mecánico cuántico para alcanzar el primer material en un punto cuántico respectivo. Un primer estado cuántico en cada punto cuántico se encuentra entre un borde de banda de conduccion y un borde de banda de valencia del tercer material en el cual los puntos cuánticos recubiertos están encastrados. Las funciones de onda del primer estado cuántico de la pluralidad de puntos cuánticos pueden superponerse para formar una banda intermedia.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/304,713 US20070137693A1 (en) | 2005-12-16 | 2005-12-16 | Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix |
Publications (1)
Publication Number | Publication Date |
---|---|
AR057251A1 true AR057251A1 (es) | 2007-11-21 |
Family
ID=38172023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP060105553A AR057251A1 (es) | 2005-12-16 | 2006-12-15 | Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica |
Country Status (8)
Country | Link |
---|---|
US (1) | US20070137693A1 (es) |
EP (1) | EP1974393A2 (es) |
JP (1) | JP5441414B2 (es) |
KR (1) | KR101335193B1 (es) |
CN (1) | CN101375407B (es) |
AR (1) | AR057251A1 (es) |
TW (1) | TW200742097A (es) |
WO (1) | WO2007120229A2 (es) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7414294B2 (en) * | 2005-12-16 | 2008-08-19 | The Trustees Of Princeton University | Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix |
WO2008033388A2 (en) * | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
US8030664B2 (en) * | 2006-12-15 | 2011-10-04 | Samsung Led Co., Ltd. | Light emitting device |
WO2008099473A1 (ja) * | 2007-02-14 | 2008-08-21 | Toyo Tire & Rubber Co., Ltd. | タイヤ構成部材の孔あけ装置 |
ES2672791T3 (es) * | 2007-06-25 | 2018-06-18 | Massachusetts Institute Of Technology | Dispositivo fotovoltaico que incluye nanocristales semiconductores |
DE102007043215A1 (de) * | 2007-09-11 | 2009-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Anordnung mit optisch aktiver Glaskeramik |
SG186643A1 (en) * | 2007-12-13 | 2013-01-30 | Technion Res & Dev Foundation | Photovoltaic cells comprising group iv-vi semiconductor core-shell nanocrystals |
ITRM20070652A1 (it) * | 2007-12-17 | 2009-06-18 | Genefinity S R L | Metodo per la realizzazione di un materiale fotovoltaico |
WO2009113986A1 (en) | 2008-03-11 | 2009-09-17 | Shaser, Inc. | Enhancing optical radiation systems used in dermatologic treatments |
WO2009142677A2 (en) * | 2008-03-24 | 2009-11-26 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum dot solar cell with quantum dot bandgap gradients |
SE533090C2 (sv) * | 2008-07-09 | 2010-06-22 | Qunano Ab | Nanostrukturerad ljusdiod |
JP4459286B2 (ja) * | 2008-08-08 | 2010-04-28 | 防衛省技術研究本部長 | 赤外線検知器 |
JP2009065142A (ja) * | 2008-08-08 | 2009-03-26 | Technical Research & Development Institute Ministry Of Defence | 量子ドット型赤外線検知器 |
JP2010067801A (ja) * | 2008-09-11 | 2010-03-25 | Seiko Epson Corp | 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法 |
JP4673398B2 (ja) * | 2008-10-22 | 2011-04-20 | 防衛省技術研究本部長 | 量子ドット型赤外線検知素子 |
JP5423952B2 (ja) * | 2009-03-04 | 2014-02-19 | セイコーエプソン株式会社 | 光電変換装置および電子機器 |
JP5229122B2 (ja) * | 2009-06-11 | 2013-07-03 | トヨタ自動車株式会社 | 光電変換素子 |
WO2011000055A1 (en) * | 2009-07-03 | 2011-01-06 | Newsouth Innovations Pty Limited | Hot carrier energy conversion structure and method of fabricating the same |
JP5408255B2 (ja) * | 2009-07-23 | 2014-02-05 | トヨタ自動車株式会社 | 光電変換素子 |
KR20110023164A (ko) * | 2009-08-28 | 2011-03-08 | 삼성전자주식회사 | 광전자 소자 |
JP2011100915A (ja) * | 2009-11-09 | 2011-05-19 | Toyota Motor Corp | 光電変換素子 |
JP2011176225A (ja) * | 2010-02-25 | 2011-09-08 | Seiko Epson Corp | 光学変換装置及び同装置を含む電子機器 |
WO2012046326A1 (ja) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | 太陽電池 |
JP5508542B2 (ja) * | 2010-10-07 | 2014-06-04 | グエラテクノロジー株式会社 | 二次電池 |
JP5256268B2 (ja) * | 2010-10-21 | 2013-08-07 | シャープ株式会社 | 太陽電池 |
JP5555602B2 (ja) * | 2010-10-25 | 2014-07-23 | シャープ株式会社 | 太陽電池 |
ES2369300B2 (es) * | 2011-06-21 | 2012-09-13 | Universidad Politécnica de Madrid | Célula solar de banda intermedia con puntos cuánticos no tensionados. |
US20130092221A1 (en) * | 2011-10-14 | 2013-04-18 | Universidad Politecnica De Madrid | Intermediate band solar cell having solution-processed colloidal quantum dots and metal nanoparticles |
CA2853599C (en) * | 2011-10-30 | 2017-07-04 | Kabushiki Kaisha Nihon Micronics | Repeatedly chargeable and dischargeable quantum battery |
JP5999887B2 (ja) * | 2011-11-29 | 2016-09-28 | シャープ株式会社 | 多接合型太陽電池 |
JP6115938B2 (ja) * | 2012-02-28 | 2017-04-19 | 国立大学法人電気通信大学 | 量子ドットの形成方法および太陽電池 |
CN102593206A (zh) * | 2012-03-05 | 2012-07-18 | 天津理工大学 | 一种耗尽型体异质结量子点太阳能电池及其制备方法 |
AU2013334164A1 (en) * | 2012-10-26 | 2015-04-09 | Research Triangle Institute | Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods |
KR102012228B1 (ko) * | 2012-12-27 | 2019-08-21 | 에스케이이노베이션 주식회사 | 양자점 기반 태양전지 및 이의 제조방법 |
JP6206834B2 (ja) * | 2013-01-22 | 2017-10-04 | 国立研究開発法人情報通信研究機構 | 量子ドット型高速フォトダイオード |
JP5880629B2 (ja) * | 2014-06-24 | 2016-03-09 | セイコーエプソン株式会社 | 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法 |
JP2015005766A (ja) * | 2014-08-20 | 2015-01-08 | セイコーエプソン株式会社 | 光学変換装置及び同装置を含む電子機器 |
WO2017091269A2 (en) * | 2015-08-31 | 2017-06-01 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
KR102446410B1 (ko) * | 2015-09-17 | 2022-09-22 | 삼성전자주식회사 | 광전소자 및 이를 포함하는 전자장치 |
JP6123925B2 (ja) * | 2016-02-03 | 2017-05-10 | セイコーエプソン株式会社 | 光電変換装置 |
JP6965764B2 (ja) * | 2018-01-18 | 2021-11-10 | 富士通株式会社 | 光検出器及びその製造方法、撮像装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079601A (en) * | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
FR2686456A1 (fr) * | 1992-01-22 | 1993-07-23 | Picogiga Sa | Detecteur infrarouge a puits quantiques. |
EP2287922A1 (en) * | 1998-08-19 | 2011-02-23 | The Trustees of Princeton University | Organic photosensitive optoelectronic device |
US6380604B1 (en) * | 2000-05-18 | 2002-04-30 | Fujitsu Limited | Quantum semiconductor device having quantum dots and optical detectors using the same |
WO2002009188A1 (en) * | 2000-06-27 | 2002-01-31 | The Regents Of The University Of California | Strain-engineered, self-assembled, semiconductor quantum dot lattices |
JP3753605B2 (ja) * | 2000-11-01 | 2006-03-08 | シャープ株式会社 | 太陽電池およびその製造方法 |
WO2002082602A2 (en) * | 2001-02-28 | 2002-10-17 | The Research Foundation Of State University Of New York | Semiconductor laser with reduced temperature sensitivity |
US7095959B2 (en) * | 2001-06-20 | 2006-08-22 | Evident Technologies | Optical time division multiplexing/demultiplexing system |
JP2007535806A (ja) * | 2004-04-30 | 2007-12-06 | ニューサウス・イノヴェイションズ・ピーティーワイ・リミテッド | 人工アモルファス半導体および太陽電池への適用 |
JP2005332945A (ja) * | 2004-05-19 | 2005-12-02 | Toyota Motor Corp | 太陽電池 |
JP4905623B2 (ja) * | 2004-10-18 | 2012-03-28 | 富士通株式会社 | 太陽電池 |
US20070012355A1 (en) * | 2005-07-12 | 2007-01-18 | Locascio Michael | Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material |
-
2005
- 2005-12-16 US US11/304,713 patent/US20070137693A1/en not_active Abandoned
-
2006
- 2006-12-07 WO PCT/US2006/046910 patent/WO2007120229A2/en active Application Filing
- 2006-12-07 CN CN2006800528162A patent/CN101375407B/zh not_active Expired - Fee Related
- 2006-12-07 EP EP06850571A patent/EP1974393A2/en not_active Withdrawn
- 2006-12-07 JP JP2008545675A patent/JP5441414B2/ja not_active Expired - Fee Related
- 2006-12-07 KR KR1020087017211A patent/KR101335193B1/ko not_active IP Right Cessation
- 2006-12-15 AR ARP060105553A patent/AR057251A1/es not_active Application Discontinuation
- 2006-12-15 TW TW095146993A patent/TW200742097A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101375407A (zh) | 2009-02-25 |
EP1974393A2 (en) | 2008-10-01 |
JP2009520357A (ja) | 2009-05-21 |
KR101335193B1 (ko) | 2013-11-29 |
US20070137693A1 (en) | 2007-06-21 |
WO2007120229A3 (en) | 2008-03-13 |
KR20080085166A (ko) | 2008-09-23 |
CN101375407B (zh) | 2010-08-25 |
TW200742097A (en) | 2007-11-01 |
JP5441414B2 (ja) | 2014-03-12 |
WO2007120229A2 (en) | 2007-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AR057251A1 (es) | Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica | |
AR057250A1 (es) | Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz organica | |
ES2722276T3 (es) | Conjunto de máscara de inmovilización, un soporte y un perfil de conexión y uso del mismo | |
ATE503963T1 (de) | Hochdichtes led-array | |
MY149413A (en) | Layered body of sheet-like members | |
CL2012000896S1 (es) | Punta para implemento de enganche en maquinaria de cuerpo prismatco hueco con bases triangulares laterales divergentes hacia arriba, lados concavos y cara inferior con dos niveles; a cada lado posee hendidura piramidal de base triangular y perforacion eliptica; la cara superior aumenta su pendiente hacia el extremo inferior. | |
EP1560275A3 (en) | Semiconductor light emitting devices including current spreading layers | |
AR041950A1 (es) | Dispositivo para la osteosintesis | |
TW200735421A (en) | LED semiconductor body and use of an LED semiconductor body | |
BR112015029612A2 (pt) | dispositivo de emissão de luz de semicondutor | |
TW200420177A (en) | Electroluminescent devices with low work function anode | |
ES2723523T3 (es) | Dispositivos optoelectrónicos con la unión de punto cuántico-fullereno | |
WO2008147392A3 (en) | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier | |
BR112015024407A2 (pt) | diodo eletroluminescente | |
EP2709172A3 (en) | Light emitting device | |
WO2005081750A3 (en) | Group iii-nitride based led having a transparent current spreading layer | |
ATE426922T1 (de) | Organisches elektrolumineszenzelement | |
CR9712A (es) | Superficie de rodadura de neumatico que tiene elementos de superficie de rodadura con un borde achaflanado. | |
AR061552A1 (es) | Tapones punctales para el suministro de agentes activos | |
AR068122A1 (es) | Conjunto de conector de tipo cuna | |
CL2008002299A1 (es) | Dispositivo para conservar y poner a disposicion obleas de medicamento que comprende bolsitas de medicamento dispuesta en una pila de bolsitas con obleas de medicamento, donde tanto en el dispositivo portador de las bolsitas asi como en la bolsa de medicamento estan dispuestas indicaciones temporales. | |
EP3358639A3 (en) | Organic light-emitting device | |
GT200600449A (es) | Compuestos de tetrahidro-pirrolizinona farmacéuticamente activos | |
CL2016001849A1 (es) | Un disipador que comprende una base de soporte que se fija al suelo y soporta una base de contacto que se asocia con una estructura de soporte, medios de interconexión, medios de control y al menos un cuerpo de disipación tipo barra teniendo un comportamiento del tipo disipador | |
CO2021000337A2 (es) | Estructura de túnel múltiple |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA | Abandonment or withdrawal |