KR101335193B1 - 무기 매트릭스에 임베딩된 터널링 장벽을 갖는 양자점을가진 중간대 감광성 장치 - Google Patents

무기 매트릭스에 임베딩된 터널링 장벽을 갖는 양자점을가진 중간대 감광성 장치 Download PDF

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KR101335193B1
KR101335193B1 KR1020087017211A KR20087017211A KR101335193B1 KR 101335193 B1 KR101335193 B1 KR 101335193B1 KR 1020087017211 A KR1020087017211 A KR 1020087017211A KR 20087017211 A KR20087017211 A KR 20087017211A KR 101335193 B1 KR101335193 B1 KR 101335193B1
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inorganic material
quantum
quantum dots
tunneling
barrier
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KR20080085166A (ko
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스티븐 알 포레스트
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더 트러스티즈 오브 프린스턴 유니버시티
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
KR1020087017211A 2005-12-16 2006-12-07 무기 매트릭스에 임베딩된 터널링 장벽을 갖는 양자점을가진 중간대 감광성 장치 Expired - Fee Related KR101335193B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/304,713 2005-12-16
US11/304,713 US20070137693A1 (en) 2005-12-16 2005-12-16 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix
PCT/US2006/046910 WO2007120229A2 (en) 2005-12-16 2006-12-07 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix

Publications (2)

Publication Number Publication Date
KR20080085166A KR20080085166A (ko) 2008-09-23
KR101335193B1 true KR101335193B1 (ko) 2013-11-29

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Country Status (8)

Country Link
US (1) US20070137693A1 (https=)
EP (1) EP1974393A2 (https=)
JP (1) JP5441414B2 (https=)
KR (1) KR101335193B1 (https=)
CN (1) CN101375407B (https=)
AR (1) AR057251A1 (https=)
TW (1) TW200742097A (https=)
WO (1) WO2007120229A2 (https=)

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US7414294B2 (en) * 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
JPWO2008099473A1 (ja) * 2007-02-14 2010-05-27 東洋ゴム工業株式会社 タイヤ構成部材の孔あけ装置
ES2672791T3 (es) * 2007-06-25 2018-06-18 Massachusetts Institute Of Technology Dispositivo fotovoltaico que incluye nanocristales semiconductores
DE102007043215A1 (de) * 2007-09-11 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Anordnung mit optisch aktiver Glaskeramik
JP2011518421A (ja) * 2007-12-13 2011-06-23 テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド Ｉｖ−ｖｉ族の半導体コア−シェルナノ結晶を備える光起電力セル
ITRM20070652A1 (it) * 2007-12-17 2009-06-18 Genefinity S R L Metodo per la realizzazione di un materiale fotovoltaico
ES2397294T3 (es) 2008-03-11 2013-03-06 Shaser, Inc. Mejora de sistema de radiación óptica usados en tratamientos dermatológicos
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
JP4459286B2 (ja) * 2008-08-08 2010-04-28 防衛省技術研究本部長 赤外線検知器
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP4673398B2 (ja) * 2008-10-22 2011-04-20 防衛省技術研究本部長 量子ドット型赤外線検知素子
JP5423952B2 (ja) * 2009-03-04 2014-02-19 セイコーエプソン株式会社 光電変換装置および電子機器
JP5229122B2 (ja) * 2009-06-11 2013-07-03 トヨタ自動車株式会社 光電変換素子
DE112010002821T5 (de) * 2009-07-03 2012-06-14 Newsouth Innovations Pty. Ltd. Struktur zur Energieumwandlung durch heisse Ladungsträger sowie Verfahren zur Herstellung dieser Struktur
US8895840B2 (en) 2009-07-23 2014-11-25 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion device
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
JP2011100915A (ja) * 2009-11-09 2011-05-19 Toyota Motor Corp 光電変換素子
JP2011176225A (ja) * 2010-02-25 2011-09-08 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
WO2012046325A1 (ja) * 2010-10-07 2012-04-12 グエラテクノロジー株式会社 二次電池
JP5342071B2 (ja) * 2010-10-07 2013-11-13 グエラテクノロジー株式会社 太陽電池
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5555602B2 (ja) * 2010-10-25 2014-07-23 シャープ株式会社 太陽電池
ES2369300B2 (es) * 2011-06-21 2012-09-13 Universidad Politécnica de Madrid Célula solar de banda intermedia con puntos cuánticos no tensionados.
US20130092221A1 (en) * 2011-10-14 2013-04-18 Universidad Politecnica De Madrid Intermediate band solar cell having solution-processed colloidal quantum dots and metal nanoparticles
US9859596B2 (en) * 2011-10-30 2018-01-02 Kabushiki Kaisha Nihon Micronics Repeatedly chargeable and dischargeable quantum battery
JP5999887B2 (ja) * 2011-11-29 2016-09-28 シャープ株式会社 多接合型太陽電池
JP6115938B2 (ja) * 2012-02-28 2017-04-19 国立大学法人電気通信大学 量子ドットの形成方法および太陽電池
CN102593206A (zh) * 2012-03-05 2012-07-18 天津理工大学 一种耗尽型体异质结量子点太阳能电池及其制备方法
AU2013334164A1 (en) * 2012-10-26 2015-04-09 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
KR102012228B1 (ko) * 2012-12-27 2019-08-21 에스케이이노베이션 주식회사 양자점 기반 태양전지 및 이의 제조방법
JP6206834B2 (ja) * 2013-01-22 2017-10-04 国立研究開発法人情報通信研究機構 量子ドット型高速フォトダイオード
JP5880629B2 (ja) * 2014-06-24 2016-03-09 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2015005766A (ja) * 2014-08-20 2015-01-08 セイコーエプソン株式会社 光学変換装置及び同装置を含む電子機器
WO2017091269A2 (en) * 2015-08-31 2017-06-01 The Board Of Regents Of The University Of Oklahoma Semiconductor devices having matrix-embedded nano-structured materials
KR102446410B1 (ko) 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
JP6123925B2 (ja) * 2016-02-03 2017-05-10 セイコーエプソン株式会社 光電変換装置
JP6965764B2 (ja) * 2018-01-18 2021-11-10 富士通株式会社 光検出器及びその製造方法、撮像装置

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US5079601A (en) 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US20020020892A1 (en) 2000-05-18 2002-02-21 Fujitsu Limited Quantum semiconductor device having quantum dots and optical detectors using the same
US20040129931A1 (en) 2001-02-28 2004-07-08 Asryan Levon V. Semiconductor laser with reduced temperature sensitivity

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US5079601A (en) 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US20020020892A1 (en) 2000-05-18 2002-02-21 Fujitsu Limited Quantum semiconductor device having quantum dots and optical detectors using the same
US20040129931A1 (en) 2001-02-28 2004-07-08 Asryan Levon V. Semiconductor laser with reduced temperature sensitivity

Also Published As

Publication number Publication date
TW200742097A (en) 2007-11-01
WO2007120229A3 (en) 2008-03-13
CN101375407A (zh) 2009-02-25
CN101375407B (zh) 2010-08-25
WO2007120229A2 (en) 2007-10-25
JP2009520357A (ja) 2009-05-21
AR057251A1 (es) 2007-11-21
US20070137693A1 (en) 2007-06-21
JP5441414B2 (ja) 2014-03-12
KR20080085166A (ko) 2008-09-23
EP1974393A2 (en) 2008-10-01

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