AR057251A1 - Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica - Google Patents

Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica

Info

Publication number
AR057251A1
AR057251A1 ARP060105553A ARP060105553A AR057251A1 AR 057251 A1 AR057251 A1 AR 057251A1 AR P060105553 A ARP060105553 A AR P060105553A AR P060105553 A ARP060105553 A AR P060105553A AR 057251 A1 AR057251 A1 AR 057251A1
Authority
AR
Argentina
Prior art keywords
quantum
barried
photosensible
intermediate band
inorganic matrix
Prior art date
Application number
ARP060105553A
Other languages
English (en)
Spanish (es)
Inventor
Stephen R Forrest
Original Assignee
Univ Princeton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton filed Critical Univ Princeton
Publication of AR057251A1 publication Critical patent/AR057251A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
ARP060105553A 2005-12-16 2006-12-15 Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica AR057251A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/304,713 US20070137693A1 (en) 2005-12-16 2005-12-16 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix

Publications (1)

Publication Number Publication Date
AR057251A1 true AR057251A1 (es) 2007-11-21

Family

ID=38172023

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP060105553A AR057251A1 (es) 2005-12-16 2006-12-15 Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica

Country Status (8)

Country Link
US (1) US20070137693A1 (https=)
EP (1) EP1974393A2 (https=)
JP (1) JP5441414B2 (https=)
KR (1) KR101335193B1 (https=)
CN (1) CN101375407B (https=)
AR (1) AR057251A1 (https=)
TW (1) TW200742097A (https=)
WO (1) WO2007120229A2 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414294B2 (en) * 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
US20100024986A1 (en) * 2007-02-14 2010-02-04 Toyo Tire & Rubber Co., Ltd. Perforating apparatus for tire constituent member
EP2165354B1 (en) * 2007-06-25 2018-05-30 Massachusetts Institute of Technology Photovoltaic device including semiconductor nanocrystals
DE102007043215A1 (de) * 2007-09-11 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Anordnung mit optisch aktiver Glaskeramik
KR101460395B1 (ko) * 2007-12-13 2014-11-21 테크니온 리서치 엔드 디벨로프먼트 화운데이션 엘티디. 4-6족 반도체 코어-쉘 나노결정을 포함하는 광기전 셀
ITRM20070652A1 (it) * 2007-12-17 2009-06-18 Genefinity S R L Metodo per la realizzazione di un materiale fotovoltaico
US8105322B2 (en) * 2008-03-11 2012-01-31 Shaser, Inc. Replacement cartridges for light-based dermatologic treatment devices
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
JP4459286B2 (ja) * 2008-08-08 2010-04-28 防衛省技術研究本部長 赤外線検知器
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP4673398B2 (ja) * 2008-10-22 2011-04-20 防衛省技術研究本部長 量子ドット型赤外線検知素子
JP5423952B2 (ja) * 2009-03-04 2014-02-19 セイコーエプソン株式会社 光電変換装置および電子機器
JP5229122B2 (ja) * 2009-06-11 2013-07-03 トヨタ自動車株式会社 光電変換素子
WO2011000055A1 (en) * 2009-07-03 2011-01-06 Newsouth Innovations Pty Limited Hot carrier energy conversion structure and method of fabricating the same
ES2558965T3 (es) 2009-07-23 2016-02-09 Toyota Jidosha Kabushiki Kaisha Elemento de conversión fotoeléctrica
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
JP2011100915A (ja) * 2009-11-09 2011-05-19 Toyota Motor Corp 光電変換素子
JP2011176225A (ja) * 2010-02-25 2011-09-08 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
KR101727204B1 (ko) * 2010-10-07 2017-04-14 구엘라 테크놀로지 가부시키가이샤 태양 전지
KR101605765B1 (ko) * 2010-10-07 2016-03-24 구엘라 테크놀로지 가부시키가이샤 이차 전지
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5555602B2 (ja) * 2010-10-25 2014-07-23 シャープ株式会社 太陽電池
ES2369300B2 (es) * 2011-06-21 2012-09-13 Universidad Politécnica de Madrid Célula solar de banda intermedia con puntos cuánticos no tensionados.
US20130092221A1 (en) * 2011-10-14 2013-04-18 Universidad Politecnica De Madrid Intermediate band solar cell having solution-processed colloidal quantum dots and metal nanoparticles
KR101654114B1 (ko) * 2011-10-30 2016-09-05 가부시키가이샤 니혼 마이크로닉스 반복 충방전 가능한 양자 전지
JP5999887B2 (ja) * 2011-11-29 2016-09-28 シャープ株式会社 多接合型太陽電池
JP6115938B2 (ja) * 2012-02-28 2017-04-19 国立大学法人電気通信大学 量子ドットの形成方法および太陽電池
CN102593206A (zh) * 2012-03-05 2012-07-18 天津理工大学 一种耗尽型体异质结量子点太阳能电池及其制备方法
AU2013334164A1 (en) * 2012-10-26 2015-04-09 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
KR102012228B1 (ko) * 2012-12-27 2019-08-21 에스케이이노베이션 주식회사 양자점 기반 태양전지 및 이의 제조방법
JP6206834B2 (ja) * 2013-01-22 2017-10-04 国立研究開発法人情報通信研究機構 量子ドット型高速フォトダイオード
JP5880629B2 (ja) * 2014-06-24 2016-03-09 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2015005766A (ja) * 2014-08-20 2015-01-08 セイコーエプソン株式会社 光学変換装置及び同装置を含む電子機器
WO2017091269A2 (en) * 2015-08-31 2017-06-01 The Board Of Regents Of The University Of Oklahoma Semiconductor devices having matrix-embedded nano-structured materials
KR102446410B1 (ko) 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
JP6123925B2 (ja) * 2016-02-03 2017-05-10 セイコーエプソン株式会社 光電変換装置
JP6965764B2 (ja) * 2018-01-18 2021-11-10 富士通株式会社 光検出器及びその製造方法、撮像装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
FR2686456A1 (fr) * 1992-01-22 1993-07-23 Picogiga Sa Detecteur infrarouge a puits quantiques.
EP2295238A1 (en) * 1998-08-19 2011-03-16 The Trustees Of Princeton University Organic photosensitive optoelectronic device
US6380604B1 (en) * 2000-05-18 2002-04-30 Fujitsu Limited Quantum semiconductor device having quantum dots and optical detectors using the same
US6583436B2 (en) * 2000-06-27 2003-06-24 The Regents Of The University Of California Strain-engineered, self-assembled, semiconductor quantum dot lattices
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
WO2002082602A2 (en) * 2001-02-28 2002-10-17 The Research Foundation Of State University Of New York Semiconductor laser with reduced temperature sensitivity
US7095959B2 (en) * 2001-06-20 2006-08-22 Evident Technologies Optical time division multiplexing/demultiplexing system
EP1751805A4 (en) * 2004-04-30 2007-07-04 Newsouth Innovations Pty Ltd ARTIFICIAL AMORPH SEMICONDUCTORS AND APPLICATIONS TO SOLAR CELLS
JP2005332945A (ja) * 2004-05-19 2005-12-02 Toyota Motor Corp 太陽電池
JP4905623B2 (ja) * 2004-10-18 2012-03-28 富士通株式会社 太陽電池
US20070012355A1 (en) * 2005-07-12 2007-01-18 Locascio Michael Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material

Also Published As

Publication number Publication date
WO2007120229A2 (en) 2007-10-25
TW200742097A (en) 2007-11-01
JP2009520357A (ja) 2009-05-21
US20070137693A1 (en) 2007-06-21
WO2007120229A3 (en) 2008-03-13
CN101375407A (zh) 2009-02-25
EP1974393A2 (en) 2008-10-01
KR101335193B1 (ko) 2013-11-29
JP5441414B2 (ja) 2014-03-12
CN101375407B (zh) 2010-08-25
KR20080085166A (ko) 2008-09-23

Similar Documents

Publication Publication Date Title
AR057251A1 (es) Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica
AR057250A1 (es) Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz organica
MX2019009471A (es) Materiales elasticos con propiedades de estiramiento direccional.
AR038107A1 (es) Sujetador de superficie
CL2012000896S1 (es) Punta para implemento de enganche en maquinaria de cuerpo prismatco hueco con bases triangulares laterales divergentes hacia arriba, lados concavos y cara inferior con dos niveles; a cada lado posee hendidura piramidal de base triangular y perforacion eliptica; la cara superior aumenta su pendiente hacia el extremo inferior.
EP1560275A3 (en) Semiconductor light emitting devices including current spreading layers
AR079504A1 (es) Uso combinado de vip 3ab y cry1fa para el manejo de insectos resistentes
AR041950A1 (es) Dispositivo para la osteosintesis
PE20110478A1 (es) Clip sismico para junta de control de perfiles en t para enrejados
EP2778511A3 (en) Light emitting module
ES2723523T3 (es) Dispositivos optoelectrónicos con la unión de punto cuántico-fullereno
JP2015122525A5 (https=)
EP3490040A4 (en) ANODEACTIVE MATERIAL, ANODE WITH ANODEACTIVE MATERIAL AND SECONDARY BATTERY WITH ANODE
TW200735421A (en) LED semiconductor body and use of an LED semiconductor body
WO2013049416A3 (en) Light emitting regions for use with light emitting devices
EP2701211A3 (en) Light emitting device
EP2455987A3 (en) Light emitting device and lighting system having the same
WO2005081750A3 (en) Group iii-nitride based led having a transparent current spreading layer
MX2024004834A (es) Cubierta para una region de un telefono movil.
ATE426922T1 (de) Organisches elektrolumineszenzelement
AR061552A1 (es) Tapones punctales para el suministro de agentes activos
MX2024004206A (es) Articulo absorbente.
WO2020012359A3 (en) Cascaded superlattice led system
EA201890792A1 (ru) Светоизлучающее устройство и устройство отображения на основе oled
MX2019010481A (es) Estructura de contacto de schottky para dispositivos de semiconductores y metodo para formar tal estructura de contacto de schottky.

Legal Events

Date Code Title Description
FA Abandonment or withdrawal