AR057251A1 - Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica - Google Patents

Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica

Info

Publication number
AR057251A1
AR057251A1 ARP060105553A ARP060105553A AR057251A1 AR 057251 A1 AR057251 A1 AR 057251A1 AR P060105553 A ARP060105553 A AR P060105553A AR P060105553 A ARP060105553 A AR P060105553A AR 057251 A1 AR057251 A1 AR 057251A1
Authority
AR
Argentina
Prior art keywords
quantum
barried
photosensible
intermediate band
inorganic matrix
Prior art date
Application number
ARP060105553A
Other languages
English (en)
Spanish (es)
Inventor
Stephen R Forrest
Original Assignee
Univ Princeton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton filed Critical Univ Princeton
Publication of AR057251A1 publication Critical patent/AR057251A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
ARP060105553A 2005-12-16 2006-12-15 Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica AR057251A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/304,713 US20070137693A1 (en) 2005-12-16 2005-12-16 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix

Publications (1)

Publication Number Publication Date
AR057251A1 true AR057251A1 (es) 2007-11-21

Family

ID=38172023

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP060105553A AR057251A1 (es) 2005-12-16 2006-12-15 Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica

Country Status (8)

Country Link
US (1) US20070137693A1 (https=)
EP (1) EP1974393A2 (https=)
JP (1) JP5441414B2 (https=)
KR (1) KR101335193B1 (https=)
CN (1) CN101375407B (https=)
AR (1) AR057251A1 (https=)
TW (1) TW200742097A (https=)
WO (1) WO2007120229A2 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414294B2 (en) * 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
JPWO2008099473A1 (ja) * 2007-02-14 2010-05-27 東洋ゴム工業株式会社 タイヤ構成部材の孔あけ装置
ES2672791T3 (es) * 2007-06-25 2018-06-18 Massachusetts Institute Of Technology Dispositivo fotovoltaico que incluye nanocristales semiconductores
DE102007043215A1 (de) * 2007-09-11 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Anordnung mit optisch aktiver Glaskeramik
JP2011518421A (ja) * 2007-12-13 2011-06-23 テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド Ｉｖ−ｖｉ族の半導体コア−シェルナノ結晶を備える光起電力セル
ITRM20070652A1 (it) * 2007-12-17 2009-06-18 Genefinity S R L Metodo per la realizzazione di un materiale fotovoltaico
ES2397294T3 (es) 2008-03-11 2013-03-06 Shaser, Inc. Mejora de sistema de radiación óptica usados en tratamientos dermatológicos
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
JP4459286B2 (ja) * 2008-08-08 2010-04-28 防衛省技術研究本部長 赤外線検知器
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP4673398B2 (ja) * 2008-10-22 2011-04-20 防衛省技術研究本部長 量子ドット型赤外線検知素子
JP5423952B2 (ja) * 2009-03-04 2014-02-19 セイコーエプソン株式会社 光電変換装置および電子機器
JP5229122B2 (ja) * 2009-06-11 2013-07-03 トヨタ自動車株式会社 光電変換素子
DE112010002821T5 (de) * 2009-07-03 2012-06-14 Newsouth Innovations Pty. Ltd. Struktur zur Energieumwandlung durch heisse Ladungsträger sowie Verfahren zur Herstellung dieser Struktur
US8895840B2 (en) 2009-07-23 2014-11-25 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion device
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
JP2011100915A (ja) * 2009-11-09 2011-05-19 Toyota Motor Corp 光電変換素子
JP2011176225A (ja) * 2010-02-25 2011-09-08 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
WO2012046325A1 (ja) * 2010-10-07 2012-04-12 グエラテクノロジー株式会社 二次電池
JP5342071B2 (ja) * 2010-10-07 2013-11-13 グエラテクノロジー株式会社 太陽電池
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5555602B2 (ja) * 2010-10-25 2014-07-23 シャープ株式会社 太陽電池
ES2369300B2 (es) * 2011-06-21 2012-09-13 Universidad Politécnica de Madrid Célula solar de banda intermedia con puntos cuánticos no tensionados.
US20130092221A1 (en) * 2011-10-14 2013-04-18 Universidad Politecnica De Madrid Intermediate band solar cell having solution-processed colloidal quantum dots and metal nanoparticles
US9859596B2 (en) * 2011-10-30 2018-01-02 Kabushiki Kaisha Nihon Micronics Repeatedly chargeable and dischargeable quantum battery
JP5999887B2 (ja) * 2011-11-29 2016-09-28 シャープ株式会社 多接合型太陽電池
JP6115938B2 (ja) * 2012-02-28 2017-04-19 国立大学法人電気通信大学 量子ドットの形成方法および太陽電池
CN102593206A (zh) * 2012-03-05 2012-07-18 天津理工大学 一种耗尽型体异质结量子点太阳能电池及其制备方法
AU2013334164A1 (en) * 2012-10-26 2015-04-09 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
KR102012228B1 (ko) * 2012-12-27 2019-08-21 에스케이이노베이션 주식회사 양자점 기반 태양전지 및 이의 제조방법
JP6206834B2 (ja) * 2013-01-22 2017-10-04 国立研究開発法人情報通信研究機構 量子ドット型高速フォトダイオード
JP5880629B2 (ja) * 2014-06-24 2016-03-09 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2015005766A (ja) * 2014-08-20 2015-01-08 セイコーエプソン株式会社 光学変換装置及び同装置を含む電子機器
WO2017091269A2 (en) * 2015-08-31 2017-06-01 The Board Of Regents Of The University Of Oklahoma Semiconductor devices having matrix-embedded nano-structured materials
KR102446410B1 (ko) 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
JP6123925B2 (ja) * 2016-02-03 2017-05-10 セイコーエプソン株式会社 光電変換装置
JP6965764B2 (ja) * 2018-01-18 2021-11-10 富士通株式会社 光検出器及びその製造方法、撮像装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
FR2686456A1 (fr) * 1992-01-22 1993-07-23 Picogiga Sa Detecteur infrarouge a puits quantiques.
AR022366A1 (es) * 1998-08-19 2002-09-04 Univ Princeton Dispositivo optoelectronico organico fotosensible, metodo de generacion de energia electrica a partir del mismo, metodo de deteccion de energia electrica a partir del mismo, y metodo de fabricacion del mismo
US6380604B1 (en) * 2000-05-18 2002-04-30 Fujitsu Limited Quantum semiconductor device having quantum dots and optical detectors using the same
WO2002009188A1 (en) * 2000-06-27 2002-01-31 The Regents Of The University Of California Strain-engineered, self-assembled, semiconductor quantum dot lattices
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
US6870178B2 (en) * 2001-02-28 2005-03-22 Levon V. Asryan Semiconductor laser with reduced temperature sensitivity
US7095959B2 (en) * 2001-06-20 2006-08-22 Evident Technologies Optical time division multiplexing/demultiplexing system
US20080251116A1 (en) * 2004-04-30 2008-10-16 Martin Andrew Green Artificial Amorphous Semiconductors and Applications to Solar Cells
JP2005332945A (ja) * 2004-05-19 2005-12-02 Toyota Motor Corp 太陽電池
JP4905623B2 (ja) * 2004-10-18 2012-03-28 富士通株式会社 太陽電池
US20070012355A1 (en) * 2005-07-12 2007-01-18 Locascio Michael Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material

Also Published As

Publication number Publication date
KR101335193B1 (ko) 2013-11-29
TW200742097A (en) 2007-11-01
WO2007120229A3 (en) 2008-03-13
CN101375407A (zh) 2009-02-25
CN101375407B (zh) 2010-08-25
WO2007120229A2 (en) 2007-10-25
JP2009520357A (ja) 2009-05-21
US20070137693A1 (en) 2007-06-21
JP5441414B2 (ja) 2014-03-12
KR20080085166A (ko) 2008-09-23
EP1974393A2 (en) 2008-10-01

Similar Documents

Publication Publication Date Title
AR057251A1 (es) Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz inorganica
MX2019009471A (es) Materiales elasticos con propiedades de estiramiento direccional.
ES2722276T3 (es) Conjunto de máscara de inmovilización, un soporte y un perfil de conexión y uso del mismo
MY149413A (en) Layered body of sheet-like members
CL2012000896S1 (es) Punta para implemento de enganche en maquinaria de cuerpo prismatco hueco con bases triangulares laterales divergentes hacia arriba, lados concavos y cara inferior con dos niveles; a cada lado posee hendidura piramidal de base triangular y perforacion eliptica; la cara superior aumenta su pendiente hacia el extremo inferior.
EP1560275A3 (en) Semiconductor light emitting devices including current spreading layers
AR079504A1 (es) Uso combinado de vip 3ab y cry1fa para el manejo de insectos resistentes
AR041950A1 (es) Dispositivo para la osteosintesis
PE20110478A1 (es) Clip sismico para junta de control de perfiles en t para enrejados
EP2778511A3 (en) Light emitting module
ES2723523T3 (es) Dispositivos optoelectrónicos con la unión de punto cuántico-fullereno
ECSP12012299A (es) Tamiz vibratorio de poliuretano
EP3490040A4 (en) ANODEACTIVE MATERIAL, ANODE WITH ANODEACTIVE MATERIAL AND SECONDARY BATTERY WITH ANODE
WO2013049416A3 (en) Light emitting regions for use with light emitting devices
EP2455987A3 (en) Light emitting device and lighting system having the same
EP2408028A3 (en) Light emitting device
TW200735421A (en) LED semiconductor body and use of an LED semiconductor body
MX2024004834A (es) Cubierta para una region de un telefono movil.
DE502004009229D1 (de) Organisches elektrolumineszenzelement
AR061552A1 (es) Tapones punctales para el suministro de agentes activos
MX2024004206A (es) Articulo absorbente.
EP4033555A4 (en) QUANTUM DOT LIGAND, QUANTUM DOT MATERIAL AND QUANTUM DOT LIGHT EMITTING DEVICE
WO2020012359A3 (en) Cascaded superlattice led system
AR068122A1 (es) Conjunto de conector de tipo cuna
EA201890792A1 (ru) Светоизлучающее устройство и устройство отображения на основе oled

Legal Events

Date Code Title Description
FA Abandonment or withdrawal