TW200739919A - Reflective TFT substrate and method for manufacturing reflective TFT substrate - Google Patents
Reflective TFT substrate and method for manufacturing reflective TFT substrateInfo
- Publication number
- TW200739919A TW200739919A TW096104480A TW96104480A TW200739919A TW 200739919 A TW200739919 A TW 200739919A TW 096104480 A TW096104480 A TW 096104480A TW 96104480 A TW96104480 A TW 96104480A TW 200739919 A TW200739919 A TW 200739919A
- Authority
- TW
- Taiwan
- Prior art keywords
- tft substrate
- reflective tft
- electrode
- gate
- wiring
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006031833A JP2007212699A (ja) | 2006-02-09 | 2006-02-09 | 反射型tft基板及び反射型tft基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200739919A true TW200739919A (en) | 2007-10-16 |
Family
ID=38345012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096104480A TW200739919A (en) | 2006-02-09 | 2007-02-07 | Reflective TFT substrate and method for manufacturing reflective TFT substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100163876A1 (zh) |
EP (1) | EP1983499A4 (zh) |
JP (1) | JP2007212699A (zh) |
KR (1) | KR20080106900A (zh) |
CN (1) | CN101379539A (zh) |
TW (1) | TW200739919A (zh) |
WO (1) | WO2007091405A1 (zh) |
Cited By (3)
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TWI412137B (zh) * | 2009-02-09 | 2013-10-11 | Sony Corp | 薄膜電晶體及顯示單元 |
TWI470806B (zh) * | 2008-11-13 | 2015-01-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
TWI626744B (zh) * | 2008-07-31 | 2018-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
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KR101448903B1 (ko) * | 2007-10-23 | 2014-10-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제작방법 |
WO2009075281A1 (ja) * | 2007-12-13 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
US8461583B2 (en) * | 2007-12-25 | 2013-06-11 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor field effect transistor and method for manufacturing the same |
US8101442B2 (en) * | 2008-03-05 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing EL display device |
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CN102132414B (zh) * | 2008-08-27 | 2013-05-22 | 出光兴产株式会社 | 场效应型晶体管、其制造方法和溅射靶 |
US9082857B2 (en) * | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
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EP2172804B1 (en) | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8741702B2 (en) | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2010047288A1 (en) | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
EP2180518B1 (en) * | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
KR101667909B1 (ko) | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
JP2010156960A (ja) * | 2008-12-03 | 2010-07-15 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
TWI475616B (zh) | 2008-12-26 | 2015-03-01 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP5606680B2 (ja) * | 2009-01-19 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法及び電気光学装置の製造方法 |
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US8247276B2 (en) | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
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US8759917B2 (en) | 2010-01-04 | 2014-06-24 | Samsung Electronics Co., Ltd. | Thin-film transistor having etch stop multi-layer and method of manufacturing the same |
CN101807552B (zh) * | 2010-03-16 | 2013-09-25 | 信利半导体有限公司 | 一种半透射式tft阵列基板制造方法 |
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WO2011151970A1 (ja) * | 2010-06-02 | 2011-12-08 | シャープ株式会社 | 薄膜トランジスタ、コンタクト構造、基板、表示装置及びこれらの製造方法 |
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JP4118484B2 (ja) * | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4785229B2 (ja) * | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001324725A (ja) * | 2000-05-12 | 2001-11-22 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
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JP4267242B2 (ja) * | 2001-03-06 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
KR100602062B1 (ko) * | 2003-04-03 | 2006-07-14 | 엘지.필립스 엘시디 주식회사 | 수평 전계 인가형 액정 표시 장치 및 그 제조 방법 |
JP2004317685A (ja) | 2003-04-15 | 2004-11-11 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2004319655A (ja) | 2003-04-15 | 2004-11-11 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2005017669A (ja) | 2003-06-26 | 2005-01-20 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2005019664A (ja) | 2003-06-26 | 2005-01-20 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2005049667A (ja) | 2003-07-30 | 2005-02-24 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2005106881A (ja) | 2003-09-29 | 2005-04-21 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2005108912A (ja) | 2003-09-29 | 2005-04-21 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2005215419A (ja) * | 2004-01-30 | 2005-08-11 | Sony Corp | 反射型液晶表示装置及び透過型液晶表示装置 |
KR101078509B1 (ko) * | 2004-03-12 | 2011-10-31 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 박막 트랜지스터의 제조 방법 |
JP4191641B2 (ja) * | 2004-04-02 | 2008-12-03 | 三菱電機株式会社 | 半透過型液晶表示装置およびその製造方法 |
TW200602774A (en) * | 2004-07-06 | 2006-01-16 | Chunghwa Picture Tubes Ltd | Thin-film transistor manufacture method |
-
2006
- 2006-02-09 JP JP2006031833A patent/JP2007212699A/ja not_active Withdrawn
-
2007
- 2007-01-16 KR KR1020087019529A patent/KR20080106900A/ko not_active Application Discontinuation
- 2007-01-16 EP EP07706834A patent/EP1983499A4/en not_active Withdrawn
- 2007-01-16 US US12/278,894 patent/US20100163876A1/en not_active Abandoned
- 2007-01-16 CN CNA2007800050494A patent/CN101379539A/zh active Pending
- 2007-01-16 WO PCT/JP2007/050507 patent/WO2007091405A1/ja active Application Filing
- 2007-02-07 TW TW096104480A patent/TW200739919A/zh unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI626744B (zh) * | 2008-07-31 | 2018-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
US10937897B2 (en) | 2008-07-31 | 2021-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI470806B (zh) * | 2008-11-13 | 2015-01-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
TWI412137B (zh) * | 2009-02-09 | 2013-10-11 | Sony Corp | 薄膜電晶體及顯示單元 |
Also Published As
Publication number | Publication date |
---|---|
US20100163876A1 (en) | 2010-07-01 |
JP2007212699A (ja) | 2007-08-23 |
KR20080106900A (ko) | 2008-12-09 |
WO2007091405A1 (ja) | 2007-08-16 |
EP1983499A1 (en) | 2008-10-22 |
CN101379539A (zh) | 2009-03-04 |
EP1983499A4 (en) | 2010-08-18 |
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