TW200641978A - A method of ion implantation to reduce transient enhanced diffusion - Google Patents

A method of ion implantation to reduce transient enhanced diffusion

Info

Publication number
TW200641978A
TW200641978A TW094144868A TW94144868A TW200641978A TW 200641978 A TW200641978 A TW 200641978A TW 094144868 A TW094144868 A TW 094144868A TW 94144868 A TW94144868 A TW 94144868A TW 200641978 A TW200641978 A TW 200641978A
Authority
TW
Taiwan
Prior art keywords
implant
semiconductor substrate
ion implantation
enhanced diffusion
reduce transient
Prior art date
Application number
TW094144868A
Other languages
English (en)
Other versions
TWI384537B (zh
Inventor
Houda Graoui
Majeed Ali Foad
Amir Al-Bayati
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200641978A publication Critical patent/TW200641978A/zh
Application granted granted Critical
Publication of TWI384537B publication Critical patent/TWI384537B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Physical Vapour Deposition (AREA)
TW094144868A 2004-12-17 2005-12-16 用以降低瞬時增強擴散之離子佈植法 TWI384537B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63665504P 2004-12-17 2004-12-17

Publications (2)

Publication Number Publication Date
TW200641978A true TW200641978A (en) 2006-12-01
TWI384537B TWI384537B (zh) 2013-02-01

Family

ID=35736382

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144868A TWI384537B (zh) 2004-12-17 2005-12-16 用以降低瞬時增強擴散之離子佈植法

Country Status (7)

Country Link
US (1) US7482255B2 (zh)
JP (1) JP2008524840A (zh)
KR (1) KR101194527B1 (zh)
CN (1) CN100539028C (zh)
GB (1) GB2422246A (zh)
TW (1) TWI384537B (zh)
WO (1) WO2006064282A2 (zh)

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US20080023732A1 (en) * 2006-07-28 2008-01-31 Felch Susan B Use of carbon co-implantation with millisecond anneal to produce ultra-shallow junctions
US7582547B2 (en) * 2006-08-04 2009-09-01 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for junction formation in a semiconductor device and the semiconductor device made thereof
JP2008091876A (ja) * 2006-08-04 2008-04-17 Interuniv Micro Electronica Centrum Vzw 半導体装置の接合形成方法およびそれにより作製された半導体装置
EP1884985A1 (en) * 2006-08-04 2008-02-06 Interuniversitair Microelektronica Centrum Method for junction formation in a semiconductor device and the semiconductor device thereof
US7572716B2 (en) * 2007-04-25 2009-08-11 Texas Instruments Incorporated Semiconductor doping with improved activation
US7895548B2 (en) * 2007-10-26 2011-02-22 Synopsys, Inc. Filler cells for design optimization in a place-and-route system
US20090108408A1 (en) * 2007-10-29 2009-04-30 Synopsys, Inc. Method for Trapping Implant Damage in a Semiconductor Substrate
US9472423B2 (en) * 2007-10-30 2016-10-18 Synopsys, Inc. Method for suppressing lattice defects in a semiconductor substrate
US20100084583A1 (en) * 2008-10-06 2010-04-08 Hatem Christopher R Reduced implant voltage during ion implantation
US8178430B2 (en) * 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors
CN102379005B (zh) 2009-04-13 2016-08-24 应用材料公司 用离子和中性束注入改变膜的磁性
CN101989550B (zh) * 2009-08-06 2013-01-02 中芯国际集成电路制造(上海)有限公司 Nmos晶体管的制造方法
US8269931B2 (en) 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US7994016B2 (en) * 2009-11-11 2011-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method for obtaining quality ultra-shallow doped regions and device having same
CN102386097B (zh) * 2010-09-01 2013-08-14 中芯国际集成电路制造(上海)有限公司 Mos晶体管及其制作方法
CN102487009B (zh) * 2010-12-02 2014-06-04 中芯国际集成电路制造(上海)有限公司 一种nmos器件源极和漏极的制作方法
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
CN102737995B (zh) * 2011-04-01 2015-09-09 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法
CN102938375B (zh) * 2011-08-15 2015-04-01 中芯国际集成电路制造(上海)有限公司 一种场效应晶体管及形成方法
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
CN103996601A (zh) * 2014-06-05 2014-08-20 厦门大学 一种锗n+/p浅结的制备方法
CN104201126B (zh) * 2014-08-15 2017-12-22 上海华力微电子有限公司 末端射程损伤的检测以及修复方法
CN105762116B (zh) * 2014-12-16 2018-09-18 中芯国际集成电路制造(上海)有限公司 硅衬底、其制作方法及包括其的ipd器件
KR102497125B1 (ko) 2015-12-22 2023-02-07 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
CN109698198A (zh) * 2017-10-23 2019-04-30 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法

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JPH03131020A (ja) * 1989-10-16 1991-06-04 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2924016B2 (ja) * 1989-11-16 1999-07-26 ソニー株式会社 Ｍｉｓ型半導体装置の製法
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Also Published As

Publication number Publication date
TWI384537B (zh) 2013-02-01
WO2006064282B1 (en) 2006-11-09
WO2006064282A2 (en) 2006-06-22
KR20070093103A (ko) 2007-09-17
JP2008524840A (ja) 2008-07-10
US7482255B2 (en) 2009-01-27
WO2006064282A8 (en) 2010-02-25
GB2422246A (en) 2006-07-19
WO2006064282A3 (en) 2006-09-21
CN101103443A (zh) 2008-01-09
CN100539028C (zh) 2009-09-09
GB0525780D0 (en) 2006-01-25
US20060160338A1 (en) 2006-07-20
KR101194527B1 (ko) 2012-10-24

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