TW200625808A - Level conversion circuit - Google Patents

Level conversion circuit

Info

Publication number
TW200625808A
TW200625808A TW094130286A TW94130286A TW200625808A TW 200625808 A TW200625808 A TW 200625808A TW 094130286 A TW094130286 A TW 094130286A TW 94130286 A TW94130286 A TW 94130286A TW 200625808 A TW200625808 A TW 200625808A
Authority
TW
Taiwan
Prior art keywords
channel mos
level
mos transistor
drain
conversion circuit
Prior art date
Application number
TW094130286A
Other languages
English (en)
Chinese (zh)
Inventor
Teruaki Kanzaki
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200625808A publication Critical patent/TW200625808A/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
TW094130286A 2004-09-21 2005-09-05 Level conversion circuit TW200625808A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004273007 2004-09-21
JP2005176591A JP2006121654A (ja) 2004-09-21 2005-06-16 レベル変換回路

Publications (1)

Publication Number Publication Date
TW200625808A true TW200625808A (en) 2006-07-16

Family

ID=36073315

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130286A TW200625808A (en) 2004-09-21 2005-09-05 Level conversion circuit

Country Status (4)

Country Link
US (3) US7432740B2 (enExample)
JP (1) JP2006121654A (enExample)
KR (1) KR20060051266A (enExample)
TW (1) TW200625808A (enExample)

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JP4731333B2 (ja) * 2006-01-25 2011-07-20 ルネサスエレクトロニクス株式会社 レベルシフト回路
KR100788356B1 (ko) * 2006-10-26 2008-01-02 동부일렉트로닉스 주식회사 전압차가 큰 레벨 변환이 가능한 단일 전원 레벨 변환기
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CN100561869C (zh) * 2007-05-23 2009-11-18 中芯国际集成电路制造(上海)有限公司 电平转换电路
US7605609B1 (en) * 2007-12-17 2009-10-20 Lattice Semiconductor Corporation Programmable level shifter
JP5074223B2 (ja) * 2008-02-06 2012-11-14 ルネサスエレクトロニクス株式会社 レベルシフト回路及びそれを用いたドライバと表示装置
JP5015819B2 (ja) * 2008-02-19 2012-08-29 ルネサスエレクトロニクス株式会社 電圧変換回路
KR101058865B1 (ko) * 2008-12-24 2011-08-23 포항공과대학교 산학협력단 다중 전원 전압 시스템을 위한 단일 전원 전압 패스 게이트레벨 변환기
JP5350141B2 (ja) * 2009-08-26 2013-11-27 ルネサスエレクトロニクス株式会社 レベルシフト回路
JP5534314B2 (ja) * 2010-02-10 2014-06-25 セイコーＮｐｃ株式会社 レベルシフト回路及びそれを用いた発振器用集積回路
US8207755B1 (en) 2011-02-15 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Low leakage power detection circuit
US9054694B2 (en) * 2012-05-31 2015-06-09 Agency for Science, Technology Research Circuit arrangements and methods of operating the same
US9240787B2 (en) * 2013-12-19 2016-01-19 Sandisk Technologies Inc. Wide supply range high speed low-to-high level shifter
US9379710B2 (en) * 2014-02-27 2016-06-28 Arm Limited Level conversion circuit and method
US9196367B2 (en) * 2014-04-02 2015-11-24 Ememory Technology Inc. Non-volatile memory apparatus and erasing method thereof
CN105576967B (zh) * 2014-10-11 2018-07-24 中芯国际集成电路制造(上海)有限公司 升压转换电路
JP6524829B2 (ja) 2015-07-13 2019-06-05 株式会社デンソー レベルシフト回路
US9492144B1 (en) * 2015-12-02 2016-11-15 Butterfly Network, Inc. Multi-level pulser and related apparatus and methods
US10735001B2 (en) 2018-04-13 2020-08-04 Taiwan Semiconductor Manufacturing Company Ltd. Level shifter circuit and method of operating the same
US10985737B2 (en) * 2018-07-20 2021-04-20 Qualcomm Incorporated High-speed low-power level-shifting clock buffer
JP7361474B2 (ja) * 2019-01-31 2023-10-16 エイブリック株式会社 入力回路
KR20240115825A (ko) * 2021-12-13 2024-07-26 소니 세미컨덕터 솔루션즈 가부시키가이샤 트랜지스터 회로
US12101089B2 (en) * 2022-10-20 2024-09-24 Qualcomm Incorporated Enhanced rising and falling transitions for level shifting low-voltage input signals

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US7199638B2 (en) * 2003-12-26 2007-04-03 Stmicroelectronics Pvt. Ltd. High speed voltage level translator
TWI231648B (en) * 2004-01-14 2005-04-21 Sunplus Technology Co Ltd High output voltage transfer apparatus
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Also Published As

Publication number Publication date
US20090002026A1 (en) 2009-01-01
US20100109745A1 (en) 2010-05-06
KR20060051266A (ko) 2006-05-19
US7652505B2 (en) 2010-01-26
US8067961B2 (en) 2011-11-29
US7432740B2 (en) 2008-10-07
US20060061386A1 (en) 2006-03-23
JP2006121654A (ja) 2006-05-11

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