TW200540989A - Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof - Google Patents

Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof Download PDF

Info

Publication number
TW200540989A
TW200540989A TW094102906A TW94102906A TW200540989A TW 200540989 A TW200540989 A TW 200540989A TW 094102906 A TW094102906 A TW 094102906A TW 94102906 A TW94102906 A TW 94102906A TW 200540989 A TW200540989 A TW 200540989A
Authority
TW
Taiwan
Prior art keywords
gas
oxidizing
processing container
oxidation
active species
Prior art date
Application number
TW094102906A
Other languages
English (en)
Chinese (zh)
Other versions
TWI353636B (enExample
Inventor
Kimiya Aoki
Keisuke Suzuki
Toshiyuki Ikeuchi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200540989A publication Critical patent/TW200540989A/zh
Application granted granted Critical
Publication of TWI353636B publication Critical patent/TWI353636B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094102906A 2004-02-25 2005-01-31 Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof TW200540989A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004050514 2004-02-25
JP2005009630A JP4706260B2 (ja) 2004-02-25 2005-01-17 被処理体の酸化方法、酸化装置及び記憶媒体

Publications (2)

Publication Number Publication Date
TW200540989A true TW200540989A (en) 2005-12-16
TWI353636B TWI353636B (enExample) 2011-12-01

Family

ID=35176657

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094102906A TW200540989A (en) 2004-02-25 2005-01-31 Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof

Country Status (4)

Country Link
US (1) US20050241578A1 (enExample)
JP (1) JP4706260B2 (enExample)
KR (1) KR100919076B1 (enExample)
TW (1) TW200540989A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100909697B1 (ko) * 2005-03-08 2009-07-29 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조방법 및 기판처리장치
KR100927983B1 (ko) * 2005-03-16 2009-11-24 가부시키가이샤 히다치 고쿠사이 덴키 기판처리방법 및 기판처리장치
JP4983159B2 (ja) * 2006-09-01 2012-07-25 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4899744B2 (ja) * 2006-09-22 2012-03-21 東京エレクトロン株式会社 被処理体の酸化装置
JP5211464B2 (ja) 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
JP5244380B2 (ja) * 2007-12-26 2013-07-24 昭和電工株式会社 磁気記録媒体の製造方法及び磁気記録再生装置
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
JP5595963B2 (ja) * 2011-03-31 2014-09-24 東京エレクトロン株式会社 縦型バッチ式成膜装置
JP6529371B2 (ja) * 2015-07-27 2019-06-12 東京エレクトロン株式会社 エッチング方法及びエッチング装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
US5603983A (en) * 1986-03-24 1997-02-18 Ensci Inc Process for the production of conductive and magnetic transitin metal oxide coated three dimensional substrates
US5204140A (en) * 1986-03-24 1993-04-20 Ensci, Inc. Process for coating a substrate with tin oxide
JP3277043B2 (ja) * 1993-09-22 2002-04-22 株式会社東芝 半導体装置の製造方法
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP2720796B2 (ja) * 1994-11-15 1998-03-04 日本電気株式会社 半導体装置の製造方法
JP2636796B2 (ja) * 1995-05-24 1997-07-30 日本電気株式会社 半導体装置の製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
EP2063464B1 (en) * 1997-10-14 2017-11-29 Texas Instruments Incorporated Method for oxidizing a structure during the fabrication of a semiconductor device
JPH11260759A (ja) * 1998-03-12 1999-09-24 Fujitsu Ltd 半導体装置の製造方法
US6835672B1 (en) * 1998-10-15 2004-12-28 Texas Instruments Incorporated Selective oxidation for semiconductor device fabrication
JP2000332245A (ja) * 1999-05-25 2000-11-30 Sony Corp 半導体装置の製造方法及びｐ形半導体素子の製造方法
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
JP4592864B2 (ja) * 2000-03-16 2010-12-08 富士通セミコンダクター株式会社 半導体装置およびその製造方法
KR100560867B1 (ko) * 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
US6696363B2 (en) * 2000-06-06 2004-02-24 Ekc Technology, Inc. Method of and apparatus for substrate pre-treatment
JP4607347B2 (ja) * 2001-02-02 2011-01-05 東京エレクトロン株式会社 被処理体の処理方法及び処理装置
JP2002353210A (ja) * 2001-05-25 2002-12-06 Tokyo Electron Ltd 熱処理装置および熱処理方法
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
JP3578155B2 (ja) * 2002-07-05 2004-10-20 東京エレクトロン株式会社 被処理体の酸化方法
JP4345410B2 (ja) * 2003-08-29 2009-10-14 東京エレクトロン株式会社 酸化方法
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体

Also Published As

Publication number Publication date
JP4706260B2 (ja) 2011-06-22
KR100919076B1 (ko) 2009-09-28
KR20060042203A (ko) 2006-05-12
US20050241578A1 (en) 2005-11-03
JP2005277386A (ja) 2005-10-06
TWI353636B (enExample) 2011-12-01

Similar Documents

Publication Publication Date Title
JP5541223B2 (ja) 成膜方法及び成膜装置
TWI554641B (zh) A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
TW201207939A (en) Method of improving oxide growth rate of selective oxidation processes
TWI326113B (en) A method of forming a silicon oxynitride film with tensile stress
TW419790B (en) Method and apparatus for forming laminated thin films or layers
JP5696530B2 (ja) 薄膜の形成方法及び成膜装置
JP4953542B2 (ja) シリコン／金属複合膜堆積物を選択的に酸化するための方法
TW201250044A (en) Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
TW200540989A (en) Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof
TWI788683B (zh) 基板處理裝置、基板支撐具、半導體裝置的製造方法及程式
CN110268506A (zh) 半导体装置的制造方法、基板处理装置及程序
TW200402790A (en) Method of oxidizing member to be treated
JP2010087167A (ja) 半導体装置の製造方法
JP5286565B2 (ja) 半導体装置の製造方法、基板処理方法および基板処理装置
TW200949940A (en) Method of aftertreatment of amorphous hydrocarbon film and method for manufacturing electronic device by using the aftertreatment method
JP4386132B2 (ja) 被処理体の処理方法及び処理装置
TW459305B (en) Method for making gate oxide film
CN101471265B (zh) 制造薄膜晶体管的方法
TWI850909B (zh) 氣體清潔方法、半導體裝置之製造方法、基板處理方法、程式及基板處理裝置
CN109155254A (zh) 半导体器件的制造方法、衬底处理装置及程序
JP2011060908A (ja) 半導体装置の製造方法および製造装置
JP6061385B2 (ja) 半導体装置の製造方法、基板処理装置およびプログラム
TW202104662A (zh) 在熱氧化物品質的低溫成長厚氧化物膜的方法
US10388762B2 (en) Method of manufacturing semiconductor device
JP6176776B2 (ja) 半導体装置の製造方法、基板処理装置、基板処理システムおよびプログラム

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees