JP4706260B2 - 被処理体の酸化方法、酸化装置及び記憶媒体 - Google Patents

被処理体の酸化方法、酸化装置及び記憶媒体 Download PDF

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Publication number
JP4706260B2
JP4706260B2 JP2005009630A JP2005009630A JP4706260B2 JP 4706260 B2 JP4706260 B2 JP 4706260B2 JP 2005009630 A JP2005009630 A JP 2005009630A JP 2005009630 A JP2005009630 A JP 2005009630A JP 4706260 B2 JP4706260 B2 JP 4706260B2
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Japan
Prior art keywords
gas
oxidizing
processed
silicon layer
oxidation
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Expired - Fee Related
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JP2005009630A
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Japanese (ja)
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JP2005277386A (ja
Inventor
公也 青木
啓介 鈴木
俊之 池内
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2005009630A priority Critical patent/JP4706260B2/ja
Priority to TW094102906A priority patent/TW200540989A/zh
Priority to US11/072,416 priority patent/US20050241578A1/en
Priority to KR1020050015677A priority patent/KR100919076B1/ko
Publication of JP2005277386A publication Critical patent/JP2005277386A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005009630A 2004-02-25 2005-01-17 被処理体の酸化方法、酸化装置及び記憶媒体 Expired - Fee Related JP4706260B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005009630A JP4706260B2 (ja) 2004-02-25 2005-01-17 被処理体の酸化方法、酸化装置及び記憶媒体
TW094102906A TW200540989A (en) 2004-02-25 2005-01-31 Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof
US11/072,416 US20050241578A1 (en) 2004-02-25 2005-02-17 Oxidizing method and oxidizing unit for object to be processed
KR1020050015677A KR100919076B1 (ko) 2004-02-25 2005-02-25 피처리체의 산화 방법 및 산화 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004050514 2004-02-25
JP2004050514 2004-02-25
JP2005009630A JP4706260B2 (ja) 2004-02-25 2005-01-17 被処理体の酸化方法、酸化装置及び記憶媒体

Publications (2)

Publication Number Publication Date
JP2005277386A JP2005277386A (ja) 2005-10-06
JP4706260B2 true JP4706260B2 (ja) 2011-06-22

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JP2005009630A Expired - Fee Related JP4706260B2 (ja) 2004-02-25 2005-01-17 被処理体の酸化方法、酸化装置及び記憶媒体

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Country Link
US (1) US20050241578A1 (enExample)
JP (1) JP4706260B2 (enExample)
KR (1) KR100919076B1 (enExample)
TW (1) TW200540989A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100909697B1 (ko) * 2005-03-08 2009-07-29 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조방법 및 기판처리장치
KR100927983B1 (ko) * 2005-03-16 2009-11-24 가부시키가이샤 히다치 고쿠사이 덴키 기판처리방법 및 기판처리장치
JP4983159B2 (ja) * 2006-09-01 2012-07-25 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4899744B2 (ja) * 2006-09-22 2012-03-21 東京エレクトロン株式会社 被処理体の酸化装置
JP5211464B2 (ja) 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
JP5244380B2 (ja) * 2007-12-26 2013-07-24 昭和電工株式会社 磁気記録媒体の製造方法及び磁気記録再生装置
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
JP5595963B2 (ja) * 2011-03-31 2014-09-24 東京エレクトロン株式会社 縦型バッチ式成膜装置
JP6529371B2 (ja) * 2015-07-27 2019-06-12 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
US5603983A (en) * 1986-03-24 1997-02-18 Ensci Inc Process for the production of conductive and magnetic transitin metal oxide coated three dimensional substrates
US5204140A (en) * 1986-03-24 1993-04-20 Ensci, Inc. Process for coating a substrate with tin oxide
JP3277043B2 (ja) * 1993-09-22 2002-04-22 株式会社東芝 半導体装置の製造方法
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP2720796B2 (ja) * 1994-11-15 1998-03-04 日本電気株式会社 半導体装置の製造方法
JP2636796B2 (ja) * 1995-05-24 1997-07-30 日本電気株式会社 半導体装置の製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
EP2063464B1 (en) * 1997-10-14 2017-11-29 Texas Instruments Incorporated Method for oxidizing a structure during the fabrication of a semiconductor device
JPH11260759A (ja) * 1998-03-12 1999-09-24 Fujitsu Ltd 半導体装置の製造方法
US6835672B1 (en) * 1998-10-15 2004-12-28 Texas Instruments Incorporated Selective oxidation for semiconductor device fabrication
JP2000332245A (ja) * 1999-05-25 2000-11-30 Sony Corp 半導体装置の製造方法及びｐ形半導体素子の製造方法
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
JP4592864B2 (ja) * 2000-03-16 2010-12-08 富士通セミコンダクター株式会社 半導体装置およびその製造方法
KR100560867B1 (ko) * 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
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JP4607347B2 (ja) * 2001-02-02 2011-01-05 東京エレクトロン株式会社 被処理体の処理方法及び処理装置
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JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体

Also Published As

Publication number Publication date
KR100919076B1 (ko) 2009-09-28
KR20060042203A (ko) 2006-05-12
US20050241578A1 (en) 2005-11-03
JP2005277386A (ja) 2005-10-06
TWI353636B (enExample) 2011-12-01
TW200540989A (en) 2005-12-16

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