KR100919076B1 - 피처리체의 산화 방법 및 산화 장치 - Google Patents

피처리체의 산화 방법 및 산화 장치

Info

Publication number
KR100919076B1
KR100919076B1 KR1020050015677A KR20050015677A KR100919076B1 KR 100919076 B1 KR100919076 B1 KR 100919076B1 KR 1020050015677 A KR1020050015677 A KR 1020050015677A KR 20050015677 A KR20050015677 A KR 20050015677A KR 100919076 B1 KR100919076 B1 KR 100919076B1
Authority
KR
South Korea
Prior art keywords
gas
silicon layer
oxidation
active species
oxidizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050015677A
Other languages
English (en)
Korean (ko)
Other versions
KR20060042203A (ko
Inventor
기미야 아오끼
게이스께 스즈끼
도시유끼 이께우찌
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20060042203A publication Critical patent/KR20060042203A/ko
Application granted granted Critical
Publication of KR100919076B1 publication Critical patent/KR100919076B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020050015677A 2004-02-25 2005-02-25 피처리체의 산화 방법 및 산화 장치 Expired - Fee Related KR100919076B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00050514 2004-02-25
JP2004050514 2004-02-25
JP2005009630A JP4706260B2 (ja) 2004-02-25 2005-01-17 被処理体の酸化方法、酸化装置及び記憶媒体
JPJP-P-2005-00009630 2005-01-17

Publications (2)

Publication Number Publication Date
KR20060042203A KR20060042203A (ko) 2006-05-12
KR100919076B1 true KR100919076B1 (ko) 2009-09-28

Family

ID=35176657

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050015677A Expired - Fee Related KR100919076B1 (ko) 2004-02-25 2005-02-25 피처리체의 산화 방법 및 산화 장치

Country Status (4)

Country Link
US (1) US20050241578A1 (enExample)
JP (1) JP4706260B2 (enExample)
KR (1) KR100919076B1 (enExample)
TW (1) TW200540989A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200705552A (en) * 2005-03-08 2007-02-01 Hitachi Int Electric Inc Semiconductor device manufacturing method and substrate treatment device
WO2006098300A1 (ja) * 2005-03-16 2006-09-21 Hitachi Kokusai Electric Inc. 基板処理方法及び基板処理装置
JP4983159B2 (ja) * 2006-09-01 2012-07-25 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4899744B2 (ja) * 2006-09-22 2012-03-21 東京エレクトロン株式会社 被処理体の酸化装置
JP5211464B2 (ja) 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
JP5244380B2 (ja) * 2007-12-26 2013-07-24 昭和電工株式会社 磁気記録媒体の製造方法及び磁気記録再生装置
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
JP5595963B2 (ja) * 2011-03-31 2014-09-24 東京エレクトロン株式会社 縦型バッチ式成膜装置
JP6529371B2 (ja) 2015-07-27 2019-06-12 東京エレクトロン株式会社 エッチング方法及びエッチング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794716A (ja) * 1993-09-22 1995-04-07 Toshiba Corp 半導体装置の製造方法
KR20010100932A (ko) * 2000-05-02 2001-11-14 히가시 데쓰로 산화방법 및 산화시스템
JP2004039990A (ja) * 2002-07-05 2004-02-05 Tokyo Electron Ltd 被処理体の酸化方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
US5603983A (en) * 1986-03-24 1997-02-18 Ensci Inc Process for the production of conductive and magnetic transitin metal oxide coated three dimensional substrates
US5204140A (en) * 1986-03-24 1993-04-20 Ensci, Inc. Process for coating a substrate with tin oxide
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP2720796B2 (ja) * 1994-11-15 1998-03-04 日本電気株式会社 半導体装置の製造方法
JP2636796B2 (ja) * 1995-05-24 1997-07-30 日本電気株式会社 半導体装置の製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
EP2063464B1 (en) * 1997-10-14 2017-11-29 Texas Instruments Incorporated Method for oxidizing a structure during the fabrication of a semiconductor device
JPH11260759A (ja) * 1998-03-12 1999-09-24 Fujitsu Ltd 半導体装置の製造方法
US6835672B1 (en) * 1998-10-15 2004-12-28 Texas Instruments Incorporated Selective oxidation for semiconductor device fabrication
JP2000332245A (ja) * 1999-05-25 2000-11-30 Sony Corp 半導体装置の製造方法及びｐ形半導体素子の製造方法
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
JP4592864B2 (ja) * 2000-03-16 2010-12-08 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
US6696363B2 (en) * 2000-06-06 2004-02-24 Ekc Technology, Inc. Method of and apparatus for substrate pre-treatment
JP4607347B2 (ja) * 2001-02-02 2011-01-05 東京エレクトロン株式会社 被処理体の処理方法及び処理装置
JP2002353210A (ja) * 2001-05-25 2002-12-06 Tokyo Electron Ltd 熱処理装置および熱処理方法
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
JP4345410B2 (ja) * 2003-08-29 2009-10-14 東京エレクトロン株式会社 酸化方法
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794716A (ja) * 1993-09-22 1995-04-07 Toshiba Corp 半導体装置の製造方法
KR20010100932A (ko) * 2000-05-02 2001-11-14 히가시 데쓰로 산화방법 및 산화시스템
JP2004039990A (ja) * 2002-07-05 2004-02-05 Tokyo Electron Ltd 被処理体の酸化方法

Also Published As

Publication number Publication date
KR20060042203A (ko) 2006-05-12
US20050241578A1 (en) 2005-11-03
JP2005277386A (ja) 2005-10-06
JP4706260B2 (ja) 2011-06-22
TW200540989A (en) 2005-12-16
TWI353636B (enExample) 2011-12-01

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