TW200529228A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
- Publication number
- TW200529228A TW200529228A TW093132384A TW93132384A TW200529228A TW 200529228 A TW200529228 A TW 200529228A TW 093132384 A TW093132384 A TW 093132384A TW 93132384 A TW93132384 A TW 93132384A TW 200529228 A TW200529228 A TW 200529228A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- write
- source
- drain
- read
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 230000015654 memory Effects 0.000 claims abstract description 123
- 238000003860 storage Methods 0.000 claims abstract description 49
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 72
- 238000000034 method Methods 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 102000000582 Retinoblastoma-Like Protein p107 Human genes 0.000 description 7
- 108010002342 Retinoblastoma-Like Protein p107 Proteins 0.000 description 7
- 102000004642 Retinoblastoma-Like Protein p130 Human genes 0.000 description 6
- 108010003494 Retinoblastoma-Like Protein p130 Proteins 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 101150016164 msw1 gene Proteins 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 101001004623 Homo sapiens Lactase-like protein Proteins 0.000 description 3
- 102100025640 Lactase-like protein Human genes 0.000 description 3
- 210000001744 T-lymphocyte Anatomy 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 101100042610 Arabidopsis thaliana SIGB gene Proteins 0.000 description 1
- 101000869488 Rhizobium radiobacter Aminoglycoside (3'') (9) adenylyltransferase Proteins 0.000 description 1
- 101100294408 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MOT2 gene Proteins 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 101150117326 sigA gene Proteins 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004047508A JP4418254B2 (ja) | 2004-02-24 | 2004-02-24 | 半導体集積回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200529228A true TW200529228A (en) | 2005-09-01 |
Family
ID=34858171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093132384A TW200529228A (en) | 2004-02-24 | 2004-10-26 | Semiconductor integrated circuit |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7139214B2 (enExample) |
| JP (1) | JP4418254B2 (enExample) |
| KR (1) | KR20050086362A (enExample) |
| CN (1) | CN1661723A (enExample) |
| TW (1) | TW200529228A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9705005B2 (en) | 2009-11-20 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6839258B2 (en) * | 2003-05-12 | 2005-01-04 | Micron Technology, Inc. | Folded DRAM CAM cell |
| JP4418254B2 (ja) * | 2004-02-24 | 2010-02-17 | 株式会社ルネサステクノロジ | 半導体集積回路 |
| US7272061B2 (en) * | 2005-01-24 | 2007-09-18 | Intel Corporation | Dynamic pre-charge level control in semiconductor devices |
| JP2006228261A (ja) * | 2005-02-15 | 2006-08-31 | Micron Technology Inc | デジット線絶縁ゲートの負電圧駆動 |
| US7286432B2 (en) * | 2005-07-22 | 2007-10-23 | Infineon Technologies Ag | Temperature update masking to ensure correct measurement of temperature when references become unstable |
| JP4335862B2 (ja) * | 2005-11-08 | 2009-09-30 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路の特性抽出方法及び特性抽出装置 |
| JP2007133927A (ja) * | 2005-11-08 | 2007-05-31 | Toshiba Corp | 半導体記憶装置及びその制御方法 |
| JP2007193928A (ja) * | 2005-12-19 | 2007-08-02 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US7839697B2 (en) * | 2006-12-21 | 2010-11-23 | Panasonic Corporation | Semiconductor memory device |
| CN101359505B (zh) * | 2008-09-02 | 2011-04-20 | 北京芯技佳易微电子科技有限公司 | 一种读隔离可编程存储器单元及其编程和读取方法 |
| KR101566403B1 (ko) | 2008-11-10 | 2015-11-13 | 삼성전자주식회사 | 반도체 소자의 동작 방법 |
| KR101515468B1 (ko) * | 2008-12-12 | 2015-05-06 | 삼성전자주식회사 | 표시장치 및 그 동작방법 |
| US7894254B2 (en) * | 2009-07-15 | 2011-02-22 | Macronix International Co., Ltd. | Refresh circuitry for phase change memory |
| KR101788521B1 (ko) | 2009-10-30 | 2017-10-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101752348B1 (ko) * | 2009-10-30 | 2017-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101761432B1 (ko) * | 2009-11-06 | 2017-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN104600074A (zh) * | 2009-11-06 | 2015-05-06 | 株式会社半导体能源研究所 | 半导体装置 |
| KR101662359B1 (ko) * | 2009-11-24 | 2016-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 셀을 포함하는 반도체 장치 |
| KR101811204B1 (ko) * | 2010-02-12 | 2017-12-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
| US8422272B2 (en) * | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US8634228B2 (en) * | 2010-09-02 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
| US8406073B1 (en) * | 2010-12-22 | 2013-03-26 | Intel Corporation | Hierarchical DRAM sensing |
| US9443984B2 (en) * | 2010-12-28 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN103247331B (zh) * | 2012-02-13 | 2016-01-20 | 中国科学院微电子研究所 | 半导体存储器件及其访问方法 |
| JP2013191265A (ja) * | 2012-02-17 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | 記憶装置、記憶装置の駆動方法、及び該記憶装置を備えた電子機器 |
| CN103503228B (zh) * | 2012-02-28 | 2016-04-06 | 株式会社村田制作所 | 高频模块 |
| KR102107591B1 (ko) * | 2012-07-18 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 소자 및 프로그래머블 로직 디바이스 |
| KR20140092537A (ko) | 2013-01-16 | 2014-07-24 | 삼성전자주식회사 | 메모리 셀 및 이를 포함하는 메모리 장치 |
| JP6076208B2 (ja) * | 2013-06-21 | 2017-02-08 | 株式会社日本マイクロニクス | 配線基板の検査装置および配線基板の検査方法 |
| JP6516978B2 (ja) | 2013-07-17 | 2019-05-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102168652B1 (ko) | 2013-12-16 | 2020-10-23 | 삼성전자주식회사 | 감지 증폭기, 그것을 포함하는 반도체 메모리 장치 및 그것의 읽기 방법 |
| CN104916647A (zh) * | 2015-06-18 | 2015-09-16 | 中山大学 | 一种非挥发性无浮栅晶体场效应管存储器 |
| US10614875B2 (en) | 2018-01-30 | 2020-04-07 | Micron Technology, Inc. | Logical operations using memory cells |
| JP7332343B2 (ja) * | 2019-05-28 | 2023-08-23 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04355297A (ja) * | 1991-05-31 | 1992-12-09 | Sanyo Electric Co Ltd | 半導体メモリ |
| US5831896A (en) * | 1996-12-17 | 1998-11-03 | International Business Machines Corporation | Memory cell |
| US5995433A (en) * | 1998-05-22 | 1999-11-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-transistor type DRAM with a refresh circuit |
| JP2000011642A (ja) | 1998-06-24 | 2000-01-14 | Sony Corp | ３トランジスタ型ｄｒａｍ |
| JP3955409B2 (ja) * | 1999-03-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| US6452834B1 (en) * | 2001-02-13 | 2002-09-17 | Silicon Access Networks | 2T dual-port DRAM in a pure logic process with non-destructive read capability |
| JP2002269975A (ja) * | 2001-03-07 | 2002-09-20 | Hitachi Ltd | 半導体記憶装置 |
| US6787835B2 (en) * | 2002-06-11 | 2004-09-07 | Hitachi, Ltd. | Semiconductor memories |
| JP2004265944A (ja) * | 2003-02-21 | 2004-09-24 | Handotai Rikougaku Kenkyu Center:Kk | 半導体記憶装置 |
| US6809979B1 (en) * | 2003-03-04 | 2004-10-26 | Fernandez & Associates, Llp | Complete refresh scheme for 3T dynamic random access memory cells |
| JP2004362695A (ja) * | 2003-06-05 | 2004-12-24 | Renesas Technology Corp | 半導体記憶装置 |
| JP4418254B2 (ja) * | 2004-02-24 | 2010-02-17 | 株式会社ルネサステクノロジ | 半導体集積回路 |
-
2004
- 2004-02-24 JP JP2004047508A patent/JP4418254B2/ja not_active Expired - Fee Related
- 2004-10-26 TW TW093132384A patent/TW200529228A/zh unknown
- 2004-12-28 KR KR1020040113742A patent/KR20050086362A/ko not_active Withdrawn
- 2004-12-30 CN CN2004100615591A patent/CN1661723A/zh active Pending
-
2005
- 2005-01-12 US US11/033,157 patent/US7139214B2/en not_active Expired - Fee Related
-
2006
- 2006-10-18 US US11/550,735 patent/US7391667B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9705005B2 (en) | 2009-11-20 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4418254B2 (ja) | 2010-02-17 |
| US7139214B2 (en) | 2006-11-21 |
| US20050185474A1 (en) | 2005-08-25 |
| JP2005243059A (ja) | 2005-09-08 |
| KR20050086362A (ko) | 2005-08-30 |
| US7391667B2 (en) | 2008-06-24 |
| US20070081380A1 (en) | 2007-04-12 |
| CN1661723A (zh) | 2005-08-31 |
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