TW200520097A - Method of forming isolation film in semiconductor device - Google Patents

Method of forming isolation film in semiconductor device

Info

Publication number
TW200520097A
TW200520097A TW093119301A TW93119301A TW200520097A TW 200520097 A TW200520097 A TW 200520097A TW 093119301 A TW093119301 A TW 093119301A TW 93119301 A TW93119301 A TW 93119301A TW 200520097 A TW200520097 A TW 200520097A
Authority
TW
Taiwan
Prior art keywords
trench
sidewall
isolation film
cleaning process
isolation
Prior art date
Application number
TW093119301A
Other languages
English (en)
Other versions
TWI253118B (en
Inventor
Cha-Deok Dong
Il-Keoun Han
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200520097A publication Critical patent/TW200520097A/zh
Application granted granted Critical
Publication of TWI253118B publication Critical patent/TWI253118B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW093119301A 2003-12-11 2004-06-30 Method of forming isolation film in semiconductor device TWI253118B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0089983A KR100526575B1 (ko) 2003-12-11 2003-12-11 반도체 소자의 소자 분리막 형성 방법

Publications (2)

Publication Number Publication Date
TW200520097A true TW200520097A (en) 2005-06-16
TWI253118B TWI253118B (en) 2006-04-11

Family

ID=34651365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119301A TWI253118B (en) 2003-12-11 2004-06-30 Method of forming isolation film in semiconductor device

Country Status (5)

Country Link
US (1) US7125784B2 (zh)
JP (1) JP2005175421A (zh)
KR (1) KR100526575B1 (zh)
DE (1) DE102004030920B4 (zh)
TW (1) TWI253118B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100639460B1 (ko) * 2004-12-30 2006-10-26 동부일렉트로닉스 주식회사 플래시 메모리 소자의 게이트 형성 방법
TW200625437A (en) * 2004-12-30 2006-07-16 Macronix Int Co Ltd Shallow trench isolation process of forming smooth edge angle by cleaning procedure
KR100624962B1 (ko) * 2005-07-04 2006-09-15 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
US7381649B2 (en) * 2005-07-29 2008-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for a multiple-gate FET device and a method for its fabrication
KR100726093B1 (ko) * 2006-07-28 2007-06-08 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
CN103367233B (zh) * 2012-03-29 2016-10-05 中芯国际集成电路制造(上海)有限公司 大马士革结构的制作方法
JP7142461B2 (ja) * 2018-05-14 2022-09-27 東京エレクトロン株式会社 基板処理方法、基板処理装置および基板処理システム
US20230326760A1 (en) * 2022-04-11 2023-10-12 Changxin Memory Technologies, Inc. Method for fabricating semiconductor structure, and semiconductor structure

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034393A (en) * 1997-06-16 2000-03-07 Mitsubishi Denki Kabushiki Kaisha Nonvolatile semiconductor memory device using trench isolation and manufacturing method thereof
US6013551A (en) * 1997-09-26 2000-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby
JP3515521B2 (ja) * 1998-04-16 2004-04-05 セミトゥール・インコーポレイテッド 半導体ウェーハなどのワークピースの処理方法および処理装置
KR100280106B1 (ko) * 1998-04-16 2001-03-02 윤종용 트렌치 격리 형성 방법
US6316055B1 (en) * 1998-05-01 2001-11-13 Virginia Tech Intellectual Properties, Inc. Near-room temperature thermal chemical vapor deposition of oxide films
US6232228B1 (en) * 1998-06-25 2001-05-15 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method
KR20000027010A (ko) 1998-10-26 2000-05-15 김영환 반도체 장치의 소자 격리 방법
KR20000042981A (ko) * 1998-12-28 2000-07-15 김영환 소자분리막의 트렌치모서리 라운딩방법
US20010052626A1 (en) * 1999-09-14 2001-12-20 Integrated Device Technology, Inc. Method for fabricating dual-gate structure
JP2001345375A (ja) * 2000-05-31 2001-12-14 Miyazaki Oki Electric Co Ltd 半導体装置および半導体装置の製造方法
KR100335999B1 (ko) * 2000-07-25 2002-05-08 윤종용 자기정렬된 셸로우 트렌치 소자분리 방법 및 이를 이용한불휘발성 메모리 장치의 제조방법
JP2002093800A (ja) * 2000-09-14 2002-03-29 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法
JP2002134634A (ja) * 2000-10-25 2002-05-10 Nec Corp 半導体装置及びその製造方法
KR20020060815A (ko) * 2001-01-12 2002-07-19 동부전자 주식회사 반도체 소자의 얕은 트렌치 분리 형성 방법
US6440816B1 (en) * 2001-01-30 2002-08-27 Agere Systems Guardian Corp. Alignment mark fabrication process to limit accumulation of errors in level to level overlay
US6641678B2 (en) * 2001-02-15 2003-11-04 Micell Technologies, Inc. Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
US20020130357A1 (en) * 2001-03-14 2002-09-19 Hurley Kelly T. Self-aligned floating gate flash cell system and method
JP3923768B2 (ja) * 2001-09-19 2007-06-06 株式会社東芝 半導体基板構造の製造方法
KR100426485B1 (ko) * 2001-12-22 2004-04-14 주식회사 하이닉스반도체 플래쉬 메모리 셀의 제조 방법
KR100499630B1 (ko) * 2002-10-08 2005-07-05 주식회사 하이닉스반도체 반도체소자의 제조방법
KR100550779B1 (ko) * 2003-12-30 2006-02-08 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
KR100602322B1 (ko) * 2004-04-20 2006-07-14 에스티마이크로일렉트로닉스 엔.브이. 플래시 메모리 소자의 제조방법 및 이를 통해 제조된플래시 메모리 소자

Also Published As

Publication number Publication date
DE102004030920A1 (de) 2005-07-07
DE102004030920B4 (de) 2011-07-28
JP2005175421A (ja) 2005-06-30
TWI253118B (en) 2006-04-11
US7125784B2 (en) 2006-10-24
KR20050057792A (ko) 2005-06-16
US20050130433A1 (en) 2005-06-16
KR100526575B1 (ko) 2005-11-04

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