TW200511341A - Valve acting metal sintered body, production method therefore and solid electrolytic capacitor - Google Patents

Valve acting metal sintered body, production method therefore and solid electrolytic capacitor

Info

Publication number
TW200511341A
TW200511341A TW093111881A TW93111881A TW200511341A TW 200511341 A TW200511341 A TW 200511341A TW 093111881 A TW093111881 A TW 093111881A TW 93111881 A TW93111881 A TW 93111881A TW 200511341 A TW200511341 A TW 200511341A
Authority
TW
Taiwan
Prior art keywords
acting metal
sintered body
valve
pore
forming agent
Prior art date
Application number
TW093111881A
Other languages
English (en)
Other versions
TWI430303B (zh
Inventor
Kazuhiro Omori
Yoshinori Shibuya
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200511341A publication Critical patent/TW200511341A/zh
Application granted granted Critical
Publication of TWI430303B publication Critical patent/TWI430303B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/11—Making porous workpieces or articles
    • B22F3/1121—Making porous workpieces or articles by using decomposable, meltable or sublimatable fillers
    • B22F3/1125—Making porous workpieces or articles by using decomposable, meltable or sublimatable fillers involving a foaming process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/08—Alloys with open or closed pores
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/022—Electrolytes; Absorbents
    • H01G9/025—Solid electrolytes
    • H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
TW093111881A 2003-04-28 2004-04-28 A valve-operated metal sintered body, a method for manufacturing the same, and a solid electrolytic capacitor TWI430303B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003123208 2003-04-28

Publications (2)

Publication Number Publication Date
TW200511341A true TW200511341A (en) 2005-03-16
TWI430303B TWI430303B (zh) 2014-03-11

Family

ID=35501390

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111881A TWI430303B (zh) 2003-04-28 2004-04-28 A valve-operated metal sintered body, a method for manufacturing the same, and a solid electrolytic capacitor

Country Status (7)

Country Link
US (1) US7713466B2 (zh)
EP (1) EP1618575B1 (zh)
JP (1) JP5014402B2 (zh)
KR (1) KR101098283B1 (zh)
CN (1) CN1813323B (zh)
TW (1) TWI430303B (zh)
WO (1) WO2004097870A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI561489B (en) * 2011-10-26 2016-12-11 Starck H C Gmbh Distortion-free stencil-printed anodes on ta/nb sheet

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CN104054995A (zh) * 2013-03-21 2014-09-24 谭燕 一种净化装置
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CN104054994A (zh) * 2013-03-21 2014-09-24 谭燕 一种净化装置
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JP6461794B2 (ja) * 2013-08-05 2019-01-30 東洋アルミニウム株式会社 アルミニウム電解コンデンサ用電極材及びその製造方法
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GB2551755B (en) * 2016-06-29 2019-06-12 Versarien Plc A method of manufacturing granules having a layer of metallic particles surrounding a salt core
CN109715320A (zh) 2016-08-12 2019-05-03 复合材料技术公司 电解电容器和改进电解电容器阳极的方法
JP6761899B2 (ja) 2016-09-01 2020-09-30 コンポジット マテリアルズ テクノロジー インコーポレイテッドＣｏｍｐｏｓｉｔｅ Ｍａｔｅｒｉａｌｓ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． ＬＩＢ陰極のためのバルブ金属基板上のナノスケール／ナノ構造のＳｉの被覆
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CN108479411B (zh) * 2018-01-25 2023-09-29 成都易态科技有限公司 多孔薄膜的坯体、前驱体及制备方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI561489B (en) * 2011-10-26 2016-12-11 Starck H C Gmbh Distortion-free stencil-printed anodes on ta/nb sheet

Also Published As

Publication number Publication date
CN1813323B (zh) 2011-09-14
EP1618575B1 (en) 2019-10-23
CN1813323A (zh) 2006-08-02
US7713466B2 (en) 2010-05-11
KR101098283B1 (ko) 2011-12-23
KR20060013645A (ko) 2006-02-13
WO2004097870A1 (en) 2004-11-11
EP1618575A4 (en) 2009-08-19
EP1618575A1 (en) 2006-01-25
TWI430303B (zh) 2014-03-11
US20060279908A1 (en) 2006-12-14
JP2010034589A (ja) 2010-02-12
JP5014402B2 (ja) 2012-08-29

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