TW200503255A - Non-volatile memory device - Google Patents

Non-volatile memory device

Info

Publication number
TW200503255A
TW200503255A TW093116644A TW93116644A TW200503255A TW 200503255 A TW200503255 A TW 200503255A TW 093116644 A TW093116644 A TW 093116644A TW 93116644 A TW93116644 A TW 93116644A TW 200503255 A TW200503255 A TW 200503255A
Authority
TW
Taiwan
Prior art keywords
memory device
volatile memory
dielectric layers
fin
insulating layer
Prior art date
Application number
TW093116644A
Other languages
English (en)
Other versions
TWI344692B (en
Inventor
Yi-Der Wu
Bin Yu
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200503255A publication Critical patent/TW200503255A/zh
Application granted granted Critical
Publication of TWI344692B publication Critical patent/TWI344692B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
TW093116644A 2003-06-12 2004-06-10 Non-volatile memory device TWI344692B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/459,576 US6963104B2 (en) 2003-06-12 2003-06-12 Non-volatile memory device

Publications (2)

Publication Number Publication Date
TW200503255A true TW200503255A (en) 2005-01-16
TWI344692B TWI344692B (en) 2011-07-01

Family

ID=33510833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093116644A TWI344692B (en) 2003-06-12 2004-06-10 Non-volatile memory device

Country Status (8)

Country Link
US (1) US6963104B2 (zh)
JP (1) JP4927550B2 (zh)
KR (1) KR20060028765A (zh)
CN (1) CN1806334A (zh)
DE (1) DE112004001049B4 (zh)
GB (1) GB2418535B (zh)
TW (1) TWI344692B (zh)
WO (1) WO2004112042A2 (zh)

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US7629640B2 (en) * 2004-05-03 2009-12-08 The Regents Of The University Of California Two bit/four bit SONOS flash memory cell
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US7583542B2 (en) * 2006-03-28 2009-09-01 Freescale Semiconductor Inc. Memory with charge storage locations
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US7763932B2 (en) * 2006-06-29 2010-07-27 International Business Machines Corporation Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices
US7745319B2 (en) * 2006-08-22 2010-06-29 Micron Technology, Inc. System and method for fabricating a fin field effect transistor
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US8772858B2 (en) 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
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US8217435B2 (en) 2006-12-22 2012-07-10 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions
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US7781817B2 (en) * 2008-06-26 2010-08-24 International Business Machines Corporation Structures, fabrication methods, and design structures for multiple bit flash memory cells
US8143665B2 (en) * 2009-01-13 2012-03-27 Macronix International Co., Ltd. Memory array and method for manufacturing and operating the same
US8860124B2 (en) * 2009-01-15 2014-10-14 Macronix International Co., Ltd. Depletion-mode charge-trapping flash device
US8461640B2 (en) * 2009-09-08 2013-06-11 Silicon Storage Technology, Inc. FIN-FET non-volatile memory cell, and an array and method of manufacturing
CN102315224B (zh) * 2010-07-07 2014-01-15 中国科学院微电子研究所 使用FinFET的非易失性存储器件及其制造方法
CN102420232B (zh) * 2010-09-28 2014-08-13 中国科学院微电子研究所 一种闪存器件及其形成方法
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Also Published As

Publication number Publication date
DE112004001049T5 (de) 2006-05-11
GB2418535B (en) 2007-11-07
TWI344692B (en) 2011-07-01
CN1806334A (zh) 2006-07-19
US6963104B2 (en) 2005-11-08
GB0525079D0 (en) 2006-01-18
DE112004001049B4 (de) 2011-02-24
JP4927550B2 (ja) 2012-05-09
GB2418535A (en) 2006-03-29
JP2007500953A (ja) 2007-01-18
WO2004112042A2 (en) 2004-12-23
WO2004112042A3 (en) 2005-03-17
KR20060028765A (ko) 2006-04-03
US20040251487A1 (en) 2004-12-16

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