DE60142825D1 - Nichtflüchtige halbleiterspeicheranordnung - Google Patents
Nichtflüchtige halbleiterspeicheranordnungInfo
- Publication number
- DE60142825D1 DE60142825D1 DE60142825T DE60142825T DE60142825D1 DE 60142825 D1 DE60142825 D1 DE 60142825D1 DE 60142825 T DE60142825 T DE 60142825T DE 60142825 T DE60142825 T DE 60142825T DE 60142825 D1 DE60142825 D1 DE 60142825D1
- Authority
- DE
- Germany
- Prior art keywords
- floating gate
- separated
- insulating layer
- channel region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00202493 | 2000-07-12 | ||
PCT/EP2001/007452 WO2002005353A1 (en) | 2000-07-12 | 2001-06-29 | Semiconductor non-volatile memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60142825D1 true DE60142825D1 (de) | 2010-09-30 |
Family
ID=8171795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60142825T Expired - Lifetime DE60142825D1 (de) | 2000-07-12 | 2001-06-29 | Nichtflüchtige halbleiterspeicheranordnung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6472706B2 (de) |
EP (1) | EP1228534B1 (de) |
JP (1) | JP2004503113A (de) |
KR (1) | KR100851206B1 (de) |
AT (1) | ATE478437T1 (de) |
DE (1) | DE60142825D1 (de) |
TW (1) | TW503528B (de) |
WO (1) | WO2002005353A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4923321B2 (ja) * | 2000-09-12 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置の動作方法 |
ATE389937T1 (de) * | 2000-12-15 | 2008-04-15 | Halo Lsi Design & Device Tech | Schnelles programmier- und programmierverifikationsverfahren |
TW476144B (en) * | 2001-02-02 | 2002-02-11 | Macronix Int Co Ltd | Non-volatile memory |
US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
EP1376676A3 (de) * | 2002-06-24 | 2008-08-20 | Interuniversitair Microelektronica Centrum Vzw | Multibit-Festwertspeicherbauelement und Verfahren |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US6773988B1 (en) * | 2002-09-13 | 2004-08-10 | Advanced Micro Devices, Inc. | Memory wordline spacer |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US6770933B2 (en) * | 2002-12-11 | 2004-08-03 | Texas Instruments Incorporated | Single poly eeprom with improved coupling ratio |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
KR100528466B1 (ko) * | 2003-02-12 | 2005-11-15 | 삼성전자주식회사 | 비휘발성 소노스 메모리 소자 및 그 제조방법 |
JP4629982B2 (ja) * | 2004-02-13 | 2011-02-09 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶素子およびその製造方法 |
JP4546117B2 (ja) * | 2004-03-10 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US7119396B2 (en) * | 2004-10-08 | 2006-10-10 | Silicon Storage Technology, Inc. | NROM device |
US7638850B2 (en) * | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
EP1746645A3 (de) | 2005-07-18 | 2009-01-21 | Saifun Semiconductors Ltd. | Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
CN100452356C (zh) * | 2005-08-19 | 2009-01-14 | 力晶半导体股份有限公司 | 非挥发性存储器及其制造方法与操作方法 |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7902589B2 (en) * | 2006-02-17 | 2011-03-08 | Macronix International Co., Ltd. | Dual gate multi-bit semiconductor memory array |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
JP4659677B2 (ja) * | 2006-05-23 | 2011-03-30 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
KR101531885B1 (ko) * | 2009-05-12 | 2015-06-29 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
TWI473253B (zh) * | 2010-04-07 | 2015-02-11 | Macronix Int Co Ltd | 具有連續電荷儲存介電堆疊的非揮發記憶陣列 |
US9406896B2 (en) * | 2014-01-10 | 2016-08-02 | Palo Alto Research Center Incorporated | Pre-fabricated substrate for printed electronic devices |
KR101552921B1 (ko) * | 2014-09-29 | 2015-09-15 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
US10937879B2 (en) | 2017-11-30 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940006094B1 (ko) | 1989-08-17 | 1994-07-06 | 삼성전자 주식회사 | 불휘발성 반도체 기억장치 및 그 제조방법 |
US5583810A (en) * | 1991-01-31 | 1996-12-10 | Interuniversitair Micro-Elektronica Centrum Vzw | Method for programming a semiconductor memory device |
US5293328A (en) | 1992-01-15 | 1994-03-08 | National Semiconductor Corporation | Electrically reprogrammable EPROM cell with merged transistor and optiumum area |
US5910912A (en) | 1992-10-30 | 1999-06-08 | International Business Machines Corporation | Flash EEPROM with dual-sidewall gate |
US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
KR0150048B1 (ko) | 1994-12-23 | 1998-10-01 | 김주용 | 플래쉬 이이피롬 셀 및 그 제조방법 |
DE19612676C2 (de) * | 1996-03-29 | 2002-06-06 | Infineon Technologies Ag | Anordnung von Halbleiter-Speicherzellen mit zwei Floating-Gates in einem Zellenfeld und Verfahren zum Betrieb einer nichtflüchtigen Halbleiter-Speicherzelle |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
DE69832019T2 (de) | 1997-09-09 | 2006-07-20 | Interuniversitair Micro-Electronica Centrum Vzw | Verfahren zur Löschung und Programmierung eines Speichers in Kleinspannungs-Anwendungen und Anwendungen mit geringer Leistung |
US6133098A (en) * | 1999-05-17 | 2000-10-17 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic flash memory |
-
2001
- 2001-06-13 TW TW090114301A patent/TW503528B/zh not_active IP Right Cessation
- 2001-06-29 JP JP2002509111A patent/JP2004503113A/ja not_active Withdrawn
- 2001-06-29 WO PCT/EP2001/007452 patent/WO2002005353A1/en active Application Filing
- 2001-06-29 KR KR1020027003198A patent/KR100851206B1/ko active IP Right Grant
- 2001-06-29 DE DE60142825T patent/DE60142825D1/de not_active Expired - Lifetime
- 2001-06-29 EP EP01953182A patent/EP1228534B1/de not_active Expired - Lifetime
- 2001-06-29 AT AT01953182T patent/ATE478437T1/de not_active IP Right Cessation
- 2001-07-11 US US09/902,920 patent/US6472706B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1228534A1 (de) | 2002-08-07 |
US6472706B2 (en) | 2002-10-29 |
ATE478437T1 (de) | 2010-09-15 |
EP1228534B1 (de) | 2010-08-18 |
WO2002005353A1 (en) | 2002-01-17 |
KR20020033792A (ko) | 2002-05-07 |
JP2004503113A (ja) | 2004-01-29 |
US20020005545A1 (en) | 2002-01-17 |
TW503528B (en) | 2002-09-21 |
KR100851206B1 (ko) | 2008-08-07 |
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