TW200428496A - III-V compound semiconductor and method for producing same - Google Patents
III-V compound semiconductor and method for producing same Download PDFInfo
- Publication number
- TW200428496A TW200428496A TW093115357A TW93115357A TW200428496A TW 200428496 A TW200428496 A TW 200428496A TW 093115357 A TW093115357 A TW 093115357A TW 93115357 A TW93115357 A TW 93115357A TW 200428496 A TW200428496 A TW 200428496A
- Authority
- TW
- Taiwan
- Prior art keywords
- quantum well
- layer
- compound semiconductor
- mixed crystal
- crystal ratio
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 150000001875 compounds Chemical class 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000013078 crystal Substances 0.000 claims abstract description 75
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 10
- 238000002347 injection Methods 0.000 claims abstract description 6
- 239000007924 injection Substances 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims description 16
- 239000010410 layer Substances 0.000 description 154
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 32
- 229910021529 ammonia Inorganic materials 0.000 description 16
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 8
- -1 V-V compound Chemical class 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- GQPCIBKZKWLGFX-UHFFFAOYSA-N C(C)C1(C=CC=C1)CC.[Mg] Chemical compound C(C)C1(C=CC=C1)CC.[Mg] GQPCIBKZKWLGFX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PNZJBDPBPVHSKL-UHFFFAOYSA-M chloro(diethyl)indigane Chemical compound [Cl-].CC[In+]CC PNZJBDPBPVHSKL-UHFFFAOYSA-M 0.000 description 1
- DZEYGJJYMLPRLL-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical compound [Mg].C1C=CC=C1 DZEYGJJYMLPRLL-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical group [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003154745A JP2004356522A (ja) | 2003-05-30 | 2003-05-30 | ３−５族化合物半導体、その製造方法及びその用途 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200428496A true TW200428496A (en) | 2004-12-16 |
| TWI360163B TWI360163B (enExample) | 2012-03-11 |
Family
ID=33487330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093115357A TW200428496A (en) | 2003-05-30 | 2004-05-28 | III-V compound semiconductor and method for producing same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7754515B2 (enExample) |
| JP (1) | JP2004356522A (enExample) |
| KR (1) | KR101125408B1 (enExample) |
| CN (1) | CN1788358B (enExample) |
| DE (1) | DE112004000936T5 (enExample) |
| GB (1) | GB2419466B (enExample) |
| TW (1) | TW200428496A (enExample) |
| WO (1) | WO2004107460A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100513923B1 (ko) * | 2004-08-13 | 2005-09-08 | 재단법인서울대학교산학협력재단 | 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자 |
| GB2432974A (en) * | 2004-09-28 | 2007-06-06 | Sumitomo Chemical Co | A group iii-v compound semiconductor and a method for producing the same |
| JP4908453B2 (ja) * | 2008-04-25 | 2012-04-04 | 住友電気工業株式会社 | 窒化物半導体レーザを作製する方法 |
| KR100962898B1 (ko) | 2008-11-14 | 2010-06-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| USRE48774E1 (en) | 2008-11-14 | 2021-10-12 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor light emitting device |
| US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
| JP5671244B2 (ja) * | 2010-03-08 | 2015-02-18 | 日亜化学工業株式会社 | 窒化物系半導体発光素子 |
| US10090433B2 (en) * | 2016-12-02 | 2018-10-02 | Sensor Electronic Technology, Inc. | Semiconductor heterostructure polarization doping |
| US11557693B2 (en) * | 2017-07-31 | 2023-01-17 | Xiamen San'an Optoelectronics Co., Ltd. | Semiconductor light emitting device |
| CN114038958B (zh) * | 2021-08-05 | 2023-03-24 | 重庆康佳光电技术研究院有限公司 | 发光芯片外延片及其制作方法、发光芯片 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2780691B2 (ja) | 1994-12-02 | 1998-07-30 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| US6346720B1 (en) * | 1995-02-03 | 2002-02-12 | Sumitomo Chemical Company, Limited | Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
| JPH0936429A (ja) | 1995-07-25 | 1997-02-07 | Sumitomo Chem Co Ltd | ３−５族化合物半導体の製造方法 |
| JP3304787B2 (ja) * | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
| JP3543628B2 (ja) | 1998-08-13 | 2004-07-14 | ソニー株式会社 | 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体発光素子の製造方法 |
| JP2001102633A (ja) * | 1999-07-26 | 2001-04-13 | Sharp Corp | 窒化物系化合物半導体発光素子の製造方法 |
| JP3710339B2 (ja) | 1999-08-31 | 2005-10-26 | シャープ株式会社 | ＧａＮ系化合物半導体発光素子の製造方法 |
| JP3929008B2 (ja) * | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
| JP3726252B2 (ja) * | 2000-02-23 | 2005-12-14 | 独立行政法人理化学研究所 | 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法 |
| FR2807909B1 (fr) | 2000-04-12 | 2006-07-28 | Centre Nat Rech Scient | COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL |
-
2003
- 2003-05-30 JP JP2003154745A patent/JP2004356522A/ja active Pending
-
2004
- 2004-05-28 TW TW093115357A patent/TW200428496A/zh not_active IP Right Cessation
- 2004-05-28 WO PCT/JP2004/007792 patent/WO2004107460A1/ja not_active Ceased
- 2004-05-28 KR KR1020057022054A patent/KR101125408B1/ko not_active Expired - Fee Related
- 2004-05-28 US US10/558,427 patent/US7754515B2/en not_active Expired - Fee Related
- 2004-05-28 CN CN2004800127740A patent/CN1788358B/zh not_active Expired - Fee Related
- 2004-05-28 GB GB0525436A patent/GB2419466B/en not_active Expired - Fee Related
- 2004-05-28 DE DE112004000936T patent/DE112004000936T5/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US7754515B2 (en) | 2010-07-13 |
| KR101125408B1 (ko) | 2012-03-27 |
| KR20060015609A (ko) | 2006-02-17 |
| CN1788358A (zh) | 2006-06-14 |
| DE112004000936T5 (de) | 2006-11-16 |
| WO2004107460A1 (ja) | 2004-12-09 |
| JP2004356522A (ja) | 2004-12-16 |
| CN1788358B (zh) | 2010-04-21 |
| GB0525436D0 (en) | 2006-01-25 |
| GB2419466B (en) | 2007-07-18 |
| TWI360163B (enExample) | 2012-03-11 |
| US20060243960A1 (en) | 2006-11-02 |
| GB2419466A (en) | 2006-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101151167B1 (ko) | Ⅲ족 질화물 화합물 반도체 소자 및 그의 제조 방법, ⅲ족 질화물 화합물 반도체 발광 소자 및 그의 제조 방법, 및 램프 | |
| CN101438429B (zh) | Ⅲ族氮化物化合物半导体叠层结构体 | |
| US8415654B2 (en) | Low resistance ultraviolet light emitting device and method of fabricating the same | |
| US8106419B2 (en) | Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp | |
| JPWO2010032423A1 (ja) | Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子並びにランプ、ｉｉｉ族窒化物半導体発光素子ウエーハの発光波長分布のばらつき低減方法 | |
| TW200834981A (en) | Process for producing III group nitride compound semiconductor light emitting element, III group nitride compound semiconductor light emitting element, and lamp | |
| JP5504618B2 (ja) | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 | |
| CN100511737C (zh) | Ⅲ-ⅴ族化合物半导体及其制备方法 | |
| US7951617B2 (en) | Group III nitride semiconductor stacked structure and production method thereof | |
| TW200428496A (en) | III-V compound semiconductor and method for producing same | |
| JP3598591B2 (ja) | ３−５族化合物半導体の製造方法 | |
| Al Tahtamouni et al. | Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1− xN for improved performance of deep ultraviolet light emitting diodes | |
| JPH0936429A (ja) | ３−５族化合物半導体の製造方法 | |
| JPH09116130A (ja) | ３−５族化合物半導体とその製造方法および発光素子 | |
| JP3752739B2 (ja) | 発光素子 | |
| JP5105738B2 (ja) | 窒化ガリウム系化合物半導体積層物の製造方法 | |
| JP2010010444A (ja) | 半導体発光素子、ランプ及び半導体発光素子の製造方法 | |
| JP2013247222A (ja) | 窒化物半導体発光素子及びその製造方法 | |
| JPH10163523A (ja) | ３−５族化合物半導体の製造方法および発光素子 | |
| TWI360234B (en) | Production method of group iii nitride semiconduct | |
| JPH09148626A (ja) | ３−５族化合物半導体の製造方法 | |
| Xing et al. | InGaN-based red LEDs with 682 nm emission and 9.2% EQE enabled by a stress-relief template | |
| JP2006128653A (ja) | ３−５族化合物半導体、その製造方法及びその用途 | |
| JP4010318B2 (ja) | 発光素子 | |
| JP2004200723A (ja) | ３−５族化合物半導体の結晶性向上方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |