CN1788358B - 化合物半导体及其制造方法 - Google Patents

化合物半导体及其制造方法 Download PDF

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Publication number
CN1788358B
CN1788358B CN2004800127740A CN200480012774A CN1788358B CN 1788358 B CN1788358 B CN 1788358B CN 2004800127740 A CN2004800127740 A CN 2004800127740A CN 200480012774 A CN200480012774 A CN 200480012774A CN 1788358 B CN1788358 B CN 1788358B
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CN
China
Prior art keywords
quantum well
layer
compound semiconductor
iii
well layer
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Expired - Fee Related
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CN2004800127740A
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English (en)
Chinese (zh)
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CN1788358A (zh
Inventor
清水诚也
佐佐木诚
土田良彦
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Publication of CN1788358A publication Critical patent/CN1788358A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CN2004800127740A 2003-05-30 2004-05-28 化合物半导体及其制造方法 Expired - Fee Related CN1788358B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP154745/2003 2003-05-30
JP2003154745A JP2004356522A (ja) 2003-05-30 2003-05-30 ３−５族化合物半導体、その製造方法及びその用途
PCT/JP2004/007792 WO2004107460A1 (ja) 2003-05-30 2004-05-28 化合物半導体及びその製造方法

Publications (2)

Publication Number Publication Date
CN1788358A CN1788358A (zh) 2006-06-14
CN1788358B true CN1788358B (zh) 2010-04-21

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Family Applications (1)

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CN2004800127740A Expired - Fee Related CN1788358B (zh) 2003-05-30 2004-05-28 化合物半导体及其制造方法

Country Status (8)

Country Link
US (1) US7754515B2 (enExample)
JP (1) JP2004356522A (enExample)
KR (1) KR101125408B1 (enExample)
CN (1) CN1788358B (enExample)
DE (1) DE112004000936T5 (enExample)
GB (1) GB2419466B (enExample)
TW (1) TW200428496A (enExample)
WO (1) WO2004107460A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
GB2432974A (en) * 2004-09-28 2007-06-06 Sumitomo Chemical Co A group iii-v compound semiconductor and a method for producing the same
JP4908453B2 (ja) * 2008-04-25 2012-04-04 住友電気工業株式会社 窒化物半導体レーザを作製する方法
KR100962898B1 (ko) 2008-11-14 2010-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
USRE48774E1 (en) 2008-11-14 2021-10-12 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor light emitting device
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
JP5671244B2 (ja) * 2010-03-08 2015-02-18 日亜化学工業株式会社 窒化物系半導体発光素子
US10090433B2 (en) * 2016-12-02 2018-10-02 Sensor Electronic Technology, Inc. Semiconductor heterostructure polarization doping
US11557693B2 (en) * 2017-07-31 2023-01-17 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor light emitting device
CN114038958B (zh) * 2021-08-05 2023-03-24 重庆康佳光电技术研究院有限公司 发光芯片外延片及其制作方法、发光芯片

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1311284A (zh) * 2000-02-23 2001-09-05 理化学研究所 紫外短波长区域发光的InAlGaN及其制备方法和使用它的紫外发光装置
US20010030329A1 (en) * 2000-01-14 2001-10-18 Yoshihiro Ueta Nitride compound semiconductor light emitting device and method for producing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2780691B2 (ja) 1994-12-02 1998-07-30 日亜化学工業株式会社 窒化物半導体発光素子
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
JPH0936429A (ja) 1995-07-25 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
JP3543628B2 (ja) 1998-08-13 2004-07-14 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体発光素子の製造方法
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP3710339B2 (ja) 1999-08-31 2005-10-26 シャープ株式会社 ＧａＮ系化合物半導体発光素子の製造方法
FR2807909B1 (fr) 2000-04-12 2006-07-28 Centre Nat Rech Scient COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010030329A1 (en) * 2000-01-14 2001-10-18 Yoshihiro Ueta Nitride compound semiconductor light emitting device and method for producing the same
CN1311284A (zh) * 2000-02-23 2001-09-05 理化学研究所 紫外短波长区域发光的InAlGaN及其制备方法和使用它的紫外发光装置

Also Published As

Publication number Publication date
US7754515B2 (en) 2010-07-13
TW200428496A (en) 2004-12-16
KR101125408B1 (ko) 2012-03-27
KR20060015609A (ko) 2006-02-17
CN1788358A (zh) 2006-06-14
DE112004000936T5 (de) 2006-11-16
WO2004107460A1 (ja) 2004-12-09
JP2004356522A (ja) 2004-12-16
GB0525436D0 (en) 2006-01-25
GB2419466B (en) 2007-07-18
TWI360163B (enExample) 2012-03-11
US20060243960A1 (en) 2006-11-02
GB2419466A (en) 2006-04-26

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Termination date: 20200528