JP2004356522A - ３−５族化合物半導体、その製造方法及びその用途 - Google Patents

３−５族化合物半導体、その製造方法及びその用途 Download PDF

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Publication number
JP2004356522A
JP2004356522A JP2003154745A JP2003154745A JP2004356522A JP 2004356522 A JP2004356522 A JP 2004356522A JP 2003154745 A JP2003154745 A JP 2003154745A JP 2003154745 A JP2003154745 A JP 2003154745A JP 2004356522 A JP2004356522 A JP 2004356522A
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JP
Japan
Prior art keywords
quantum well
compound semiconductor
group
layer
well layer
Prior art date
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Pending
Application number
JP2003154745A
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English (en)
Japanese (ja)
Inventor
Seiya Shimizu
誠也 清水
Makoto Sasaki
誠 佐々木
Yoshihiko Tsuchida
良彦 土田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP2003154745A priority Critical patent/JP2004356522A/ja
Priority to TW093115357A priority patent/TW200428496A/zh
Priority to PCT/JP2004/007792 priority patent/WO2004107460A1/ja
Priority to DE112004000936T priority patent/DE112004000936T5/de
Priority to US10/558,427 priority patent/US7754515B2/en
Priority to CN2004800127740A priority patent/CN1788358B/zh
Priority to KR1020057022054A priority patent/KR101125408B1/ko
Priority to GB0525436A priority patent/GB2419466B/en
Publication of JP2004356522A publication Critical patent/JP2004356522A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2003154745A 2003-05-30 2003-05-30 ３−５族化合物半導体、その製造方法及びその用途 Pending JP2004356522A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003154745A JP2004356522A (ja) 2003-05-30 2003-05-30 ３−５族化合物半導体、その製造方法及びその用途
TW093115357A TW200428496A (en) 2003-05-30 2004-05-28 III-V compound semiconductor and method for producing same
PCT/JP2004/007792 WO2004107460A1 (ja) 2003-05-30 2004-05-28 化合物半導体及びその製造方法
DE112004000936T DE112004000936T5 (de) 2003-05-30 2004-05-28 Verbindungshalbleiter und Verfahren zur Herstellung desselben
US10/558,427 US7754515B2 (en) 2003-05-30 2004-05-28 Compound semiconductor and method for producing same
CN2004800127740A CN1788358B (zh) 2003-05-30 2004-05-28 化合物半导体及其制造方法
KR1020057022054A KR101125408B1 (ko) 2003-05-30 2004-05-28 화합물 반도체 및 그 제조 방법
GB0525436A GB2419466B (en) 2003-05-30 2004-05-28 Compound semiconductor and method for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003154745A JP2004356522A (ja) 2003-05-30 2003-05-30 ３−５族化合物半導体、その製造方法及びその用途

Publications (1)

Publication Number Publication Date
JP2004356522A true JP2004356522A (ja) 2004-12-16

Family

ID=33487330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003154745A Pending JP2004356522A (ja) 2003-05-30 2003-05-30 ３−５族化合物半導体、その製造方法及びその用途

Country Status (8)

Country Link
US (1) US7754515B2 (enExample)
JP (1) JP2004356522A (enExample)
KR (1) KR101125408B1 (enExample)
CN (1) CN1788358B (enExample)
DE (1) DE112004000936T5 (enExample)
GB (1) GB2419466B (enExample)
TW (1) TW200428496A (enExample)
WO (1) WO2004107460A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7883915B2 (en) 2008-04-25 2011-02-08 Sumitomo Electric Industries, Ltd. Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
GB2432974A (en) * 2004-09-28 2007-06-06 Sumitomo Chemical Co A group iii-v compound semiconductor and a method for producing the same
KR100962898B1 (ko) 2008-11-14 2010-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
USRE48774E1 (en) 2008-11-14 2021-10-12 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor light emitting device
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
JP5671244B2 (ja) * 2010-03-08 2015-02-18 日亜化学工業株式会社 窒化物系半導体発光素子
US10090433B2 (en) * 2016-12-02 2018-10-02 Sensor Electronic Technology, Inc. Semiconductor heterostructure polarization doping
US11557693B2 (en) * 2017-07-31 2023-01-17 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor light emitting device
CN114038958B (zh) * 2021-08-05 2023-03-24 重庆康佳光电技术研究院有限公司 发光芯片外延片及其制作方法、发光芯片

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2780691B2 (ja) 1994-12-02 1998-07-30 日亜化学工業株式会社 窒化物半導体発光素子
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
JPH0936429A (ja) 1995-07-25 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
JP3543628B2 (ja) 1998-08-13 2004-07-14 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体発光素子の製造方法
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP3710339B2 (ja) 1999-08-31 2005-10-26 シャープ株式会社 ＧａＮ系化合物半導体発光素子の製造方法
JP3929008B2 (ja) * 2000-01-14 2007-06-13 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP3726252B2 (ja) * 2000-02-23 2005-12-14 独立行政法人理化学研究所 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法
FR2807909B1 (fr) 2000-04-12 2006-07-28 Centre Nat Rech Scient COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7883915B2 (en) 2008-04-25 2011-02-08 Sumitomo Electric Industries, Ltd. Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser
US8295317B2 (en) 2008-04-25 2012-10-23 Sumitomo Electric Industries, Ltd. Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser

Also Published As

Publication number Publication date
US7754515B2 (en) 2010-07-13
TW200428496A (en) 2004-12-16
KR101125408B1 (ko) 2012-03-27
KR20060015609A (ko) 2006-02-17
CN1788358A (zh) 2006-06-14
DE112004000936T5 (de) 2006-11-16
WO2004107460A1 (ja) 2004-12-09
CN1788358B (zh) 2010-04-21
GB0525436D0 (en) 2006-01-25
GB2419466B (en) 2007-07-18
TWI360163B (enExample) 2012-03-11
US20060243960A1 (en) 2006-11-02
GB2419466A (en) 2006-04-26

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