GB2419466B - Compound semiconductor and method for producing same - Google Patents

Compound semiconductor and method for producing same

Info

Publication number
GB2419466B
GB2419466B GB0525436A GB0525436A GB2419466B GB 2419466 B GB2419466 B GB 2419466B GB 0525436 A GB0525436 A GB 0525436A GB 0525436 A GB0525436 A GB 0525436A GB 2419466 B GB2419466 B GB 2419466B
Authority
GB
United Kingdom
Prior art keywords
compound semiconductor
producing same
producing
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0525436A
Other languages
English (en)
Other versions
GB0525436D0 (en
GB2419466A (en
Inventor
Masaya Shimizu
Makoto Sasaki
Yoshihiko Tsuchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of GB0525436D0 publication Critical patent/GB0525436D0/en
Publication of GB2419466A publication Critical patent/GB2419466A/en
Application granted granted Critical
Publication of GB2419466B publication Critical patent/GB2419466B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
GB0525436A 2003-05-30 2004-05-28 Compound semiconductor and method for producing same Expired - Fee Related GB2419466B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003154745A JP2004356522A (ja) 2003-05-30 2003-05-30 ３−５族化合物半導体、その製造方法及びその用途
PCT/JP2004/007792 WO2004107460A1 (ja) 2003-05-30 2004-05-28 化合物半導体及びその製造方法

Publications (3)

Publication Number Publication Date
GB0525436D0 GB0525436D0 (en) 2006-01-25
GB2419466A GB2419466A (en) 2006-04-26
GB2419466B true GB2419466B (en) 2007-07-18

Family

ID=33487330

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0525436A Expired - Fee Related GB2419466B (en) 2003-05-30 2004-05-28 Compound semiconductor and method for producing same

Country Status (8)

Country Link
US (1) US7754515B2 (enExample)
JP (1) JP2004356522A (enExample)
KR (1) KR101125408B1 (enExample)
CN (1) CN1788358B (enExample)
DE (1) DE112004000936T5 (enExample)
GB (1) GB2419466B (enExample)
TW (1) TW200428496A (enExample)
WO (1) WO2004107460A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
CN100511737C (zh) * 2004-09-28 2009-07-08 住友化学株式会社 Ⅲ-ⅴ族化合物半导体及其制备方法
JP4908453B2 (ja) * 2008-04-25 2012-04-04 住友電気工業株式会社 窒化物半導体レーザを作製する方法
KR100962898B1 (ko) 2008-11-14 2010-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
USRE48774E1 (en) 2008-11-14 2021-10-12 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor light emitting device
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
JP5671244B2 (ja) * 2010-03-08 2015-02-18 日亜化学工業株式会社 窒化物系半導体発光素子
US10090433B2 (en) * 2016-12-02 2018-10-02 Sensor Electronic Technology, Inc. Semiconductor heterostructure polarization doping
US11557693B2 (en) 2017-07-31 2023-01-17 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor light emitting device
CN114038958B (zh) * 2021-08-05 2023-03-24 重庆康佳光电技术研究院有限公司 发光芯片外延片及其制作方法、发光芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058980A (ja) * 1998-08-13 2000-02-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体発光素子
JP2001077415A (ja) * 1999-08-31 2001-03-23 Sharp Corp ＧａＮ系化合物半導体発光素子の製造方法
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP2001196632A (ja) * 2000-01-14 2001-07-19 Sharp Corp 窒化物系化合物半導体発光およびその製造方法
WO2001078157A1 (fr) * 2000-04-12 2001-10-18 Centre National De La Recherche Scientifique Couche mince semi-conductrice de gainn, son procede de preparation, diode electroluminescente comprenant cette couche et dispositif d'eclairage

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2780691B2 (ja) 1994-12-02 1998-07-30 日亜化学工業株式会社 窒化物半導体発光素子
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
JPH0936429A (ja) 1995-07-25 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
JP3726252B2 (ja) * 2000-02-23 2005-12-14 独立行政法人理化学研究所 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058980A (ja) * 1998-08-13 2000-02-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体発光素子
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP2001077415A (ja) * 1999-08-31 2001-03-23 Sharp Corp ＧａＮ系化合物半導体発光素子の製造方法
JP2001196632A (ja) * 2000-01-14 2001-07-19 Sharp Corp 窒化物系化合物半導体発光およびその製造方法
US7064357B2 (en) * 2000-01-14 2006-06-20 Sharp Kabushiki Kaisha Nitride compound semiconductor light emitting device and method for producing the same
WO2001078157A1 (fr) * 2000-04-12 2001-10-18 Centre National De La Recherche Scientifique Couche mince semi-conductrice de gainn, son procede de preparation, diode electroluminescente comprenant cette couche et dispositif d'eclairage

Also Published As

Publication number Publication date
GB0525436D0 (en) 2006-01-25
CN1788358A (zh) 2006-06-14
TW200428496A (en) 2004-12-16
KR101125408B1 (ko) 2012-03-27
CN1788358B (zh) 2010-04-21
JP2004356522A (ja) 2004-12-16
US20060243960A1 (en) 2006-11-02
GB2419466A (en) 2006-04-26
DE112004000936T5 (de) 2006-11-16
TWI360163B (enExample) 2012-03-11
WO2004107460A1 (ja) 2004-12-09
KR20060015609A (ko) 2006-02-17
US7754515B2 (en) 2010-07-13

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Legal Events

Date Code Title Description
789A Request for publication of translation (sect. 89(a)/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120528