KR101125408B1 - 화합물 반도체 및 그 제조 방법 - Google Patents

화합물 반도체 및 그 제조 방법 Download PDF

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Publication number
KR101125408B1
KR101125408B1 KR1020057022054A KR20057022054A KR101125408B1 KR 101125408 B1 KR101125408 B1 KR 101125408B1 KR 1020057022054 A KR1020057022054 A KR 1020057022054A KR 20057022054 A KR20057022054 A KR 20057022054A KR 101125408 B1 KR101125408 B1 KR 101125408B1
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South Korea
Prior art keywords
quantum well
layer
growth
compound semiconductor
inn
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Expired - Fee Related
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KR1020057022054A
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English (en)
Korean (ko)
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KR20060015609A (ko
Inventor
마사야 시미즈
마코토 사사키
요시히코 츠치다
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스미또모 가가꾸 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020057022054A 2003-05-30 2004-05-28 화합물 반도체 및 그 제조 방법 Expired - Fee Related KR101125408B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003154745A JP2004356522A (ja) 2003-05-30 2003-05-30 ３−５族化合物半導体、その製造方法及びその用途
JPJP-P-2003-00154745 2003-05-30
PCT/JP2004/007792 WO2004107460A1 (ja) 2003-05-30 2004-05-28 化合物半導体及びその製造方法

Publications (2)

Publication Number Publication Date
KR20060015609A KR20060015609A (ko) 2006-02-17
KR101125408B1 true KR101125408B1 (ko) 2012-03-27

Family

ID=33487330

Family Applications (1)

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KR1020057022054A Expired - Fee Related KR101125408B1 (ko) 2003-05-30 2004-05-28 화합물 반도체 및 그 제조 방법

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Country Link
US (1) US7754515B2 (enExample)
JP (1) JP2004356522A (enExample)
KR (1) KR101125408B1 (enExample)
CN (1) CN1788358B (enExample)
DE (1) DE112004000936T5 (enExample)
GB (1) GB2419466B (enExample)
TW (1) TW200428496A (enExample)
WO (1) WO2004107460A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
CN100511737C (zh) * 2004-09-28 2009-07-08 住友化学株式会社 Ⅲ-ⅴ族化合物半导体及其制备方法
JP4908453B2 (ja) * 2008-04-25 2012-04-04 住友電気工業株式会社 窒化物半導体レーザを作製する方法
KR100962898B1 (ko) 2008-11-14 2010-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
USRE48774E1 (en) 2008-11-14 2021-10-12 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor light emitting device
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
JP5671244B2 (ja) * 2010-03-08 2015-02-18 日亜化学工業株式会社 窒化物系半導体発光素子
US10090433B2 (en) * 2016-12-02 2018-10-02 Sensor Electronic Technology, Inc. Semiconductor heterostructure polarization doping
US11557693B2 (en) 2017-07-31 2023-01-17 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor light emitting device
CN114038958B (zh) * 2021-08-05 2023-03-24 重庆康佳光电技术研究院有限公司 发光芯片外延片及其制作方法、发光芯片

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077415A (ja) * 1999-08-31 2001-03-23 Sharp Corp ＧａＮ系化合物半導体発光素子の製造方法
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP2001196632A (ja) * 2000-01-14 2001-07-19 Sharp Corp 窒化物系化合物半導体発光およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2780691B2 (ja) 1994-12-02 1998-07-30 日亜化学工業株式会社 窒化物半導体発光素子
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
JPH0936429A (ja) 1995-07-25 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
JP3543628B2 (ja) 1998-08-13 2004-07-14 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体発光素子の製造方法
JP3726252B2 (ja) * 2000-02-23 2005-12-14 独立行政法人理化学研究所 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法
FR2807909B1 (fr) 2000-04-12 2006-07-28 Centre Nat Rech Scient COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP2001077415A (ja) * 1999-08-31 2001-03-23 Sharp Corp ＧａＮ系化合物半導体発光素子の製造方法
JP2001196632A (ja) * 2000-01-14 2001-07-19 Sharp Corp 窒化物系化合物半導体発光およびその製造方法

Also Published As

Publication number Publication date
GB0525436D0 (en) 2006-01-25
CN1788358A (zh) 2006-06-14
TW200428496A (en) 2004-12-16
CN1788358B (zh) 2010-04-21
JP2004356522A (ja) 2004-12-16
US20060243960A1 (en) 2006-11-02
GB2419466B (en) 2007-07-18
GB2419466A (en) 2006-04-26
DE112004000936T5 (de) 2006-11-16
TWI360163B (enExample) 2012-03-11
WO2004107460A1 (ja) 2004-12-09
KR20060015609A (ko) 2006-02-17
US7754515B2 (en) 2010-07-13

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