TW200405523A - A semiconductor memory device and a method of manufacturing the same - Google Patents

A semiconductor memory device and a method of manufacturing the same Download PDF

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Publication number
TW200405523A
TW200405523A TW092109213A TW92109213A TW200405523A TW 200405523 A TW200405523 A TW 200405523A TW 092109213 A TW092109213 A TW 092109213A TW 92109213 A TW92109213 A TW 92109213A TW 200405523 A TW200405523 A TW 200405523A
Authority
TW
Taiwan
Prior art keywords
misfets
misfet
vertical
film
memory device
Prior art date
Application number
TW092109213A
Other languages
English (en)
Chinese (zh)
Inventor
Masahiro Moniwa
Kousuke Okuyama
Hiraku Chakihara
Yasuhiko Takahashi
Original Assignee
Hitachi Ltd
Hitachi Ulsi Sys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Ulsi Sys Co Ltd filed Critical Hitachi Ltd
Publication of TW200405523A publication Critical patent/TW200405523A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW092109213A 2002-07-08 2003-04-21 A semiconductor memory device and a method of manufacturing the same TW200405523A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002199308 2002-07-08
JP2003054378A JP2004096065A (ja) 2002-07-08 2003-02-28 半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW200405523A true TW200405523A (en) 2004-04-01

Family

ID=30002359

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092109213A TW200405523A (en) 2002-07-08 2003-04-21 A semiconductor memory device and a method of manufacturing the same

Country Status (4)

Country Link
US (5) US7279754B2 (enExample)
JP (1) JP2004096065A (enExample)
KR (1) KR20040005627A (enExample)
TW (1) TW200405523A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688874B (zh) * 2014-10-22 2020-03-21 南韓商三星電子股份有限公司 積體電路及其布局設計方法
TWI781421B (zh) * 2020-03-05 2022-10-21 日商鎧俠股份有限公司 半導體記憶裝置
US11515434B2 (en) 2019-09-17 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupling capacitor and method of making the same
TWI847669B (zh) * 2022-05-24 2024-07-01 台灣積體電路製造股份有限公司 積體電路結構及其製造方法
TWI893507B (zh) * 2022-12-06 2025-08-11 日商鎧俠股份有限公司 半導體裝置

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004096065A (ja) * 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2004221242A (ja) * 2003-01-14 2004-08-05 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP2004356469A (ja) * 2003-05-30 2004-12-16 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2005310852A (ja) * 2004-04-19 2005-11-04 Renesas Technology Corp 半導体集積回路装置およびの製造方法
US7615426B2 (en) * 2005-02-22 2009-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. PMOS transistor with discontinuous CESL and method of fabrication
US8405216B2 (en) * 2005-06-29 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for integrated circuits
CN100511476C (zh) * 2005-08-16 2009-07-08 力晶半导体股份有限公司 静态随机存取存储器及其操作方法
US7525163B2 (en) * 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
US8058683B2 (en) * 2007-01-18 2011-11-15 Samsung Electronics Co., Ltd. Access device having vertical channel and related semiconductor device and a method of fabricating the access device
US8183628B2 (en) 2007-10-29 2012-05-22 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8053842B2 (en) 2008-01-29 2011-11-08 Unisantis Electronics (Japan) Ltd. Semiconductor storage device
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5317343B2 (ja) 2009-04-28 2013-10-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5489272B2 (ja) * 2008-01-29 2014-05-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置
WO2009095999A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
KR101480286B1 (ko) * 2008-06-20 2015-01-09 삼성전자주식회사 고집적 반도체 소자 및 그 제조방법
KR101486426B1 (ko) 2009-01-30 2015-01-26 삼성전자주식회사 스택형 로드리스 반도체 메모리 소자
JP5356970B2 (ja) 2009-10-01 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
CN102334189B (zh) 2010-03-08 2013-11-06 新加坡优尼山帝斯电子私人有限公司 固体摄像器件
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
JP5066590B2 (ja) 2010-06-09 2012-11-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法
JP5087655B2 (ja) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8304840B2 (en) * 2010-07-29 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer structures of a semiconductor device
JP5539916B2 (ja) * 2011-03-04 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置
KR101893848B1 (ko) 2011-06-16 2018-10-04 삼성전자주식회사 수직 소자 및 비-수직 소자를 갖는 반도체 소자 및 그 형성 방법
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8809152B2 (en) 2011-11-18 2014-08-19 International Business Machines Corporation Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
JP6120738B2 (ja) * 2013-09-17 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR102191215B1 (ko) 2013-12-20 2020-12-16 삼성전자주식회사 에스램 셀 및 그 제조 방법
US9653563B2 (en) * 2014-04-18 2017-05-16 Taiwan Semiconductor Manufacturing Company Limited Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate
US9397094B2 (en) * 2014-09-25 2016-07-19 International Business Machines Corporation Semiconductor structure with an L-shaped bottom plate
US10127979B2 (en) 2016-03-11 2018-11-13 Western Digital Technologies, Inc. Memory cell located pulse generator
US10381408B2 (en) * 2016-03-24 2019-08-13 Western Digital Technologies, Inc. Method to fabricate discrete vertical transistors
US10128254B2 (en) 2016-06-20 2018-11-13 Samsung Electronics Co., Ltd. Semiconductor device
US10651178B2 (en) 2018-02-14 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Compact electrical connection that can be used to form an SRAM cell and method of making the same
US11770923B2 (en) * 2021-03-03 2023-09-26 Micron Technology, Inc. Thin film transistor random access memory
JPWO2023188379A1 (enExample) * 2022-03-31 2023-10-05

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132771A (en) * 1985-12-27 1992-07-21 Hitachi, Ltd. Semiconductor memory device having flip-flop circuits
JP2927463B2 (ja) * 1989-09-28 1999-07-28 株式会社日立製作所 半導体記憶装置
KR100199258B1 (ko) * 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
JPH0562474A (ja) 1991-08-29 1993-03-12 Nec Corp 半導体メモリ装置
JPH05206394A (ja) 1992-01-24 1993-08-13 Mitsubishi Electric Corp 電界効果トランジスタおよびその製造方法
US5364810A (en) 1992-07-28 1994-11-15 Motorola, Inc. Methods of forming a vertical field-effect transistor and a semiconductor memory cell
JPH06104405A (ja) 1992-09-22 1994-04-15 Toshiba Corp スタティック型メモリ
JPH09260510A (ja) * 1996-01-17 1997-10-03 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2000502543A (ja) * 1996-10-14 2000-02-29 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 低オフセットによる偏向
TW454339B (en) * 1997-06-20 2001-09-11 Hitachi Ltd Semiconductor integrated circuit apparatus and its fabricating method
SG79292A1 (en) * 1998-12-11 2001-03-20 Hitachi Ltd Semiconductor integrated circuit and its manufacturing method
JP2001203263A (ja) * 2000-01-20 2001-07-27 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP2002083949A (ja) * 2000-09-07 2002-03-22 Nec Corp Ｃｍｏｓイメージセンサ及びその製造方法
JP2002203913A (ja) * 2000-12-28 2002-07-19 Hitachi Ltd 半導体記憶装置の製造方法および半導体記憶装置
JP2003068883A (ja) 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置
KR100911295B1 (ko) 2001-10-24 2009-08-11 엘피다 메모리, 아이엔씨. 종형 ｍｉｓｆｅｔ의 제조 방법, 종형 ｍｉｓｆｅｔ,반도체 기억 장치의 제조 방법, 및 반도체 기억 장치
JP3948292B2 (ja) * 2002-02-01 2007-07-25 株式会社日立製作所 半導体記憶装置及びその製造方法
JP2004031448A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2004096065A (ja) * 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP5206394B2 (ja) 2008-12-22 2013-06-12 三菱自動車工業株式会社 二次電池ユニット

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688874B (zh) * 2014-10-22 2020-03-21 南韓商三星電子股份有限公司 積體電路及其布局設計方法
US11515434B2 (en) 2019-09-17 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupling capacitor and method of making the same
US11901463B2 (en) 2019-09-17 2024-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making decoupling capacitor
US12310038B2 (en) 2019-09-17 2025-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making decoupling capacitor
TWI781421B (zh) * 2020-03-05 2022-10-21 日商鎧俠股份有限公司 半導體記憶裝置
TWI847669B (zh) * 2022-05-24 2024-07-01 台灣積體電路製造股份有限公司 積體電路結構及其製造方法
US12057390B2 (en) 2022-05-24 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain isolation structure, layout, and method
TWI893507B (zh) * 2022-12-06 2025-08-11 日商鎧俠股份有限公司 半導體裝置

Also Published As

Publication number Publication date
JP2004096065A (ja) 2004-03-25
KR20040005627A (ko) 2004-01-16
US7598133B2 (en) 2009-10-06
US20040005755A1 (en) 2004-01-08
US7981738B2 (en) 2011-07-19
US7279754B2 (en) 2007-10-09
US20110275207A1 (en) 2011-11-10
US20110034017A1 (en) 2011-02-10
US7829952B2 (en) 2010-11-09
US20090261390A1 (en) 2009-10-22
US20070173006A1 (en) 2007-07-26
US8652895B2 (en) 2014-02-18

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