TW200405523A - A semiconductor memory device and a method of manufacturing the same - Google Patents
A semiconductor memory device and a method of manufacturing the same Download PDFInfo
- Publication number
- TW200405523A TW200405523A TW092109213A TW92109213A TW200405523A TW 200405523 A TW200405523 A TW 200405523A TW 092109213 A TW092109213 A TW 092109213A TW 92109213 A TW92109213 A TW 92109213A TW 200405523 A TW200405523 A TW 200405523A
- Authority
- TW
- Taiwan
- Prior art keywords
- misfets
- misfet
- vertical
- film
- memory device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 437
- 238000004519 manufacturing process Methods 0.000 title claims description 137
- 239000010408 film Substances 0.000 claims description 600
- 239000010410 layer Substances 0.000 claims description 212
- 239000000758 substrate Substances 0.000 claims description 145
- 230000000295 complement effect Effects 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 88
- 230000002093 peripheral effect Effects 0.000 claims description 65
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 50
- 239000004575 stone Substances 0.000 claims description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 239000012535 impurity Substances 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 22
- 229910052721 tungsten Inorganic materials 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 15
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 10
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 10
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 210000000496 pancreas Anatomy 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 4
- 238000006880 cross-coupling reaction Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 239000008267 milk Substances 0.000 claims description 2
- 210000004080 milk Anatomy 0.000 claims description 2
- 235000013336 milk Nutrition 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 241000283973 Oryctolagus cuniculus Species 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 210000003205 muscle Anatomy 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 150000004032 porphyrins Chemical class 0.000 claims 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 45
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 45
- 210000004027 cell Anatomy 0.000 description 142
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 238000005229 chemical vapour deposition Methods 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 230000002829 reductive effect Effects 0.000 description 16
- 239000010941 cobalt Substances 0.000 description 14
- 229910017052 cobalt Inorganic materials 0.000 description 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 13
- 238000005498 polishing Methods 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- -1 boron ions Chemical class 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 4
- 229910008814 WSi2 Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 241001674048 Phthiraptera Species 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- IBXNCJKFFQIKKY-UHFFFAOYSA-N 1-pentyne Chemical compound CCCC#C IBXNCJKFFQIKKY-UHFFFAOYSA-N 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002199308 | 2002-07-08 | ||
| JP2003054378A JP2004096065A (ja) | 2002-07-08 | 2003-02-28 | 半導体記憶装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200405523A true TW200405523A (en) | 2004-04-01 |
Family
ID=30002359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092109213A TW200405523A (en) | 2002-07-08 | 2003-04-21 | A semiconductor memory device and a method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (5) | US7279754B2 (enExample) |
| JP (1) | JP2004096065A (enExample) |
| KR (1) | KR20040005627A (enExample) |
| TW (1) | TW200405523A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI688874B (zh) * | 2014-10-22 | 2020-03-21 | 南韓商三星電子股份有限公司 | 積體電路及其布局設計方法 |
| TWI781421B (zh) * | 2020-03-05 | 2022-10-21 | 日商鎧俠股份有限公司 | 半導體記憶裝置 |
| US11515434B2 (en) | 2019-09-17 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Decoupling capacitor and method of making the same |
| TWI847669B (zh) * | 2022-05-24 | 2024-07-01 | 台灣積體電路製造股份有限公司 | 積體電路結構及其製造方法 |
| TWI893507B (zh) * | 2022-12-06 | 2025-08-11 | 日商鎧俠股份有限公司 | 半導體裝置 |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004096065A (ja) * | 2002-07-08 | 2004-03-25 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
| JP2004221242A (ja) * | 2003-01-14 | 2004-08-05 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| JP2004356469A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2005310852A (ja) * | 2004-04-19 | 2005-11-04 | Renesas Technology Corp | 半導体集積回路装置およびの製造方法 |
| US7615426B2 (en) * | 2005-02-22 | 2009-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | PMOS transistor with discontinuous CESL and method of fabrication |
| US8405216B2 (en) * | 2005-06-29 | 2013-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure for integrated circuits |
| CN100511476C (zh) * | 2005-08-16 | 2009-07-08 | 力晶半导体股份有限公司 | 静态随机存取存储器及其操作方法 |
| US7525163B2 (en) * | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
| US8058683B2 (en) * | 2007-01-18 | 2011-11-15 | Samsung Electronics Co., Ltd. | Access device having vertical channel and related semiconductor device and a method of fabricating the access device |
| US8183628B2 (en) | 2007-10-29 | 2012-05-22 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor structure and method of fabricating the semiconductor structure |
| US8053842B2 (en) | 2008-01-29 | 2011-11-08 | Unisantis Electronics (Japan) Ltd. | Semiconductor storage device |
| JP5489272B2 (ja) * | 2008-01-29 | 2014-05-14 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体記憶装置 |
| JP5317343B2 (ja) | 2009-04-28 | 2013-10-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| WO2009095999A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体記憶装置 |
| US8598650B2 (en) | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
| KR101480286B1 (ko) * | 2008-06-20 | 2015-01-09 | 삼성전자주식회사 | 고집적 반도체 소자 및 그 제조방법 |
| KR101486426B1 (ko) | 2009-01-30 | 2015-01-26 | 삼성전자주식회사 | 스택형 로드리스 반도체 메모리 소자 |
| JP5356970B2 (ja) | 2009-10-01 | 2013-12-04 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| KR101211442B1 (ko) | 2010-03-08 | 2012-12-12 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | 고체 촬상 장치 |
| US8487357B2 (en) | 2010-03-12 | 2013-07-16 | Unisantis Electronics Singapore Pte Ltd. | Solid state imaging device having high sensitivity and high pixel density |
| JP5066590B2 (ja) | 2010-06-09 | 2012-11-07 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置とその製造方法 |
| JP5087655B2 (ja) | 2010-06-15 | 2012-12-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| US8304840B2 (en) * | 2010-07-29 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer structures of a semiconductor device |
| JP5539916B2 (ja) | 2011-03-04 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR101893848B1 (ko) | 2011-06-16 | 2018-10-04 | 삼성전자주식회사 | 수직 소자 및 비-수직 소자를 갖는 반도체 소자 및 그 형성 방법 |
| US8564034B2 (en) | 2011-09-08 | 2013-10-22 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
| US8669601B2 (en) | 2011-09-15 | 2014-03-11 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor |
| US8809152B2 (en) | 2011-11-18 | 2014-08-19 | International Business Machines Corporation | Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices |
| US8916478B2 (en) | 2011-12-19 | 2014-12-23 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US8772175B2 (en) | 2011-12-19 | 2014-07-08 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US8748938B2 (en) | 2012-02-20 | 2014-06-10 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
| JP6120738B2 (ja) * | 2013-09-17 | 2017-04-26 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| KR102191215B1 (ko) | 2013-12-20 | 2020-12-16 | 삼성전자주식회사 | 에스램 셀 및 그 제조 방법 |
| US9653563B2 (en) * | 2014-04-18 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company Limited | Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate |
| US9397094B2 (en) | 2014-09-25 | 2016-07-19 | International Business Machines Corporation | Semiconductor structure with an L-shaped bottom plate |
| US10127979B2 (en) | 2016-03-11 | 2018-11-13 | Western Digital Technologies, Inc. | Memory cell located pulse generator |
| US10381408B2 (en) * | 2016-03-24 | 2019-08-13 | Western Digital Technologies, Inc. | Method to fabricate discrete vertical transistors |
| US10128254B2 (en) | 2016-06-20 | 2018-11-13 | Samsung Electronics Co., Ltd. | Semiconductor device |
| US10651178B2 (en) | 2018-02-14 | 2020-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Compact electrical connection that can be used to form an SRAM cell and method of making the same |
| US11770923B2 (en) * | 2021-03-03 | 2023-09-26 | Micron Technology, Inc. | Thin film transistor random access memory |
| JPWO2023188379A1 (enExample) * | 2022-03-31 | 2023-10-05 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132771A (en) | 1985-12-27 | 1992-07-21 | Hitachi, Ltd. | Semiconductor memory device having flip-flop circuits |
| JP2927463B2 (ja) | 1989-09-28 | 1999-07-28 | 株式会社日立製作所 | 半導体記憶装置 |
| KR100199258B1 (ko) | 1990-02-09 | 1999-06-15 | 가나이 쓰도무 | 반도체집적회로장치 |
| JPH0562474A (ja) | 1991-08-29 | 1993-03-12 | Nec Corp | 半導体メモリ装置 |
| JPH05206394A (ja) | 1992-01-24 | 1993-08-13 | Mitsubishi Electric Corp | 電界効果トランジスタおよびその製造方法 |
| US5364810A (en) | 1992-07-28 | 1994-11-15 | Motorola, Inc. | Methods of forming a vertical field-effect transistor and a semiconductor memory cell |
| JPH06104405A (ja) | 1992-09-22 | 1994-04-15 | Toshiba Corp | スタティック型メモリ |
| JPH09260510A (ja) * | 1996-01-17 | 1997-10-03 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| KR100474620B1 (ko) * | 1996-10-14 | 2005-05-16 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 오프세트가낮은편향회로 |
| TW454339B (en) * | 1997-06-20 | 2001-09-11 | Hitachi Ltd | Semiconductor integrated circuit apparatus and its fabricating method |
| SG79292A1 (en) * | 1998-12-11 | 2001-03-20 | Hitachi Ltd | Semiconductor integrated circuit and its manufacturing method |
| JP2001203263A (ja) * | 2000-01-20 | 2001-07-27 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
| JP2002083949A (ja) * | 2000-09-07 | 2002-03-22 | Nec Corp | Ｃｍｏｓイメージセンサ及びその製造方法 |
| JP2002203913A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Ltd | 半導体記憶装置の製造方法および半導体記憶装置 |
| JP2003068883A (ja) | 2001-08-24 | 2003-03-07 | Hitachi Ltd | 半導体記憶装置 |
| US7244977B2 (en) | 2001-10-24 | 2007-07-17 | Elpida Memory, Inc. | Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device |
| JP3948292B2 (ja) | 2002-02-01 | 2007-07-25 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
| JP2004031448A (ja) * | 2002-06-21 | 2004-01-29 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| JP2004096065A (ja) * | 2002-07-08 | 2004-03-25 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
| JP5206394B2 (ja) | 2008-12-22 | 2013-06-12 | 三菱自動車工業株式会社 | 二次電池ユニット |
-
2003
- 2003-02-28 JP JP2003054378A patent/JP2004096065A/ja not_active Withdrawn
- 2003-04-21 TW TW092109213A patent/TW200405523A/zh unknown
- 2003-06-20 US US10/465,550 patent/US7279754B2/en not_active Expired - Lifetime
- 2003-07-07 KR KR1020030045630A patent/KR20040005627A/ko not_active Withdrawn
-
2007
- 2007-03-07 US US11/714,865 patent/US7598133B2/en not_active Expired - Fee Related
-
2009
- 2009-06-25 US US12/491,756 patent/US7829952B2/en not_active Expired - Lifetime
-
2010
- 2010-10-22 US US12/909,878 patent/US7981738B2/en not_active Expired - Lifetime
-
2011
- 2011-07-05 US US13/176,196 patent/US8652895B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI688874B (zh) * | 2014-10-22 | 2020-03-21 | 南韓商三星電子股份有限公司 | 積體電路及其布局設計方法 |
| US11515434B2 (en) | 2019-09-17 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Decoupling capacitor and method of making the same |
| US11901463B2 (en) | 2019-09-17 | 2024-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making decoupling capacitor |
| US12310038B2 (en) | 2019-09-17 | 2025-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making decoupling capacitor |
| TWI781421B (zh) * | 2020-03-05 | 2022-10-21 | 日商鎧俠股份有限公司 | 半導體記憶裝置 |
| TWI847669B (zh) * | 2022-05-24 | 2024-07-01 | 台灣積體電路製造股份有限公司 | 積體電路結構及其製造方法 |
| US12057390B2 (en) | 2022-05-24 | 2024-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain isolation structure, layout, and method |
| TWI893507B (zh) * | 2022-12-06 | 2025-08-11 | 日商鎧俠股份有限公司 | 半導體裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090261390A1 (en) | 2009-10-22 |
| US20110275207A1 (en) | 2011-11-10 |
| US8652895B2 (en) | 2014-02-18 |
| US7598133B2 (en) | 2009-10-06 |
| KR20040005627A (ko) | 2004-01-16 |
| US7981738B2 (en) | 2011-07-19 |
| US7829952B2 (en) | 2010-11-09 |
| JP2004096065A (ja) | 2004-03-25 |
| US7279754B2 (en) | 2007-10-09 |
| US20070173006A1 (en) | 2007-07-26 |
| US20040005755A1 (en) | 2004-01-08 |
| US20110034017A1 (en) | 2011-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200405523A (en) | A semiconductor memory device and a method of manufacturing the same | |
| US9691774B2 (en) | Structure and method for SRAM cell circuit | |
| US20120202330A1 (en) | Semiconductor device and method of manufacturing the same | |
| JP4940947B2 (ja) | 半導体装置およびその製造方法 | |
| US7994583B2 (en) | Semiconductor device including n-type and p-type FinFET's constituting an inverter structure | |
| JP5440617B2 (ja) | 半導体装置およびその製造方法 | |
| JP3936830B2 (ja) | 半導体装置 | |
| KR20050026995A (ko) | 반도체 장치 및 그 제조방법 | |
| TW200409343A (en) | A semiconductor memory device and a method of manufacturing the same, a vertical MISFET and a method of manufacturing the sane, and a method of manufacturing a semiconductor device and a semiconductor device | |
| JP2002064154A (ja) | 半導体集積回路装置およびその製造方法 | |
| JP2003068883A (ja) | 半導体記憶装置 | |
| JP5432379B2 (ja) | 半導体装置 | |
| US20140131810A1 (en) | Semiconductor memory device | |
| KR101404941B1 (ko) | 반도체 장치와 그 제조 방법 | |
| US20050230716A1 (en) | Semiconductor integrated circuit equipment and its manufacture method | |
| JP4024495B2 (ja) | 半導体集積回路装置 | |
| JP2015057868A (ja) | 半導体装置 | |
| JPH10270572A (ja) | 半導体装置およびその製造方法 | |
| WO2007063988A1 (ja) | 半導体装置およびその製造方法 | |
| JP5725679B2 (ja) | 半導体装置 | |
| JP4024813B2 (ja) | 半導体集積回路装置 | |
| JP2007258739A (ja) | 半導体集積回路装置 | |
| JP2004128182A (ja) | 半導体集積回路装置およびその製造方法 | |
| KR20060072253A (ko) | 씨모스 트랜지스터를 채택하는 반도체 소자들 및 그제조방법들 |