JP2004096065A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法 Download PDF

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Publication number
JP2004096065A
JP2004096065A JP2003054378A JP2003054378A JP2004096065A JP 2004096065 A JP2004096065 A JP 2004096065A JP 2003054378 A JP2003054378 A JP 2003054378A JP 2003054378 A JP2003054378 A JP 2003054378A JP 2004096065 A JP2004096065 A JP 2004096065A
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JP
Japan
Prior art keywords
misfets
misfet
film
vertical
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003054378A
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English (en)
Japanese (ja)
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JP2004096065A5 (enExample
Inventor
Masahiro Shigeniwa
茂庭　昌弘
Hiroshi Chagihara
茶木原　啓
Kosuke Okuyama
奥山　幸祐
Yasuhiko Takahashi
高橋　保彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Hitachi Solutions Technology Ltd
Original Assignee
Renesas Technology Corp
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Hitachi ULSI Systems Co Ltd filed Critical Renesas Technology Corp
Priority to JP2003054378A priority Critical patent/JP2004096065A/ja
Priority to TW092109213A priority patent/TW200405523A/zh
Priority to US10/465,550 priority patent/US7279754B2/en
Priority to KR1020030045630A priority patent/KR20040005627A/ko
Publication of JP2004096065A publication Critical patent/JP2004096065A/ja
Publication of JP2004096065A5 publication Critical patent/JP2004096065A5/ja
Priority to US11/714,865 priority patent/US7598133B2/en
Priority to US12/491,756 priority patent/US7829952B2/en
Priority to US12/909,878 priority patent/US7981738B2/en
Priority to US13/176,196 priority patent/US8652895B2/en
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2003054378A 2002-07-08 2003-02-28 半導体記憶装置およびその製造方法 Withdrawn JP2004096065A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003054378A JP2004096065A (ja) 2002-07-08 2003-02-28 半導体記憶装置およびその製造方法
TW092109213A TW200405523A (en) 2002-07-08 2003-04-21 A semiconductor memory device and a method of manufacturing the same
US10/465,550 US7279754B2 (en) 2002-07-08 2003-06-20 Semiconductor memory device and a method of manufacturing the same
KR1020030045630A KR20040005627A (ko) 2002-07-08 2003-07-07 반도체 기억 장치 및 그 제조방법
US11/714,865 US7598133B2 (en) 2002-07-08 2007-03-07 Semiconductor memory device and a method of manufacturing the same
US12/491,756 US7829952B2 (en) 2002-07-08 2009-06-25 Semiconductor memory device and a method of manufacturing the same
US12/909,878 US7981738B2 (en) 2002-07-08 2010-10-22 Semiconductor memory device and a method of manufacturing the same
US13/176,196 US8652895B2 (en) 2002-07-08 2011-07-05 Semiconductor memory device and a method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002199308 2002-07-08
JP2003054378A JP2004096065A (ja) 2002-07-08 2003-02-28 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2004096065A true JP2004096065A (ja) 2004-03-25
JP2004096065A5 JP2004096065A5 (enExample) 2006-03-16

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JP2003054378A Withdrawn JP2004096065A (ja) 2002-07-08 2003-02-28 半導体記憶装置およびその製造方法

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US (5) US7279754B2 (enExample)
JP (1) JP2004096065A (enExample)
KR (1) KR20040005627A (enExample)
TW (1) TW200405523A (enExample)

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JP2008177565A (ja) * 2007-01-18 2008-07-31 Samsung Electronics Co Ltd 垂直方向のチャンネルを有するアクセス素子、これを含む半導体装置、及びアクセス素子の形成方法
WO2009095999A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
US7994582B2 (en) 2009-01-30 2011-08-09 Samsung Electronics Co., Ltd. Stacked load-less static random access memory device
US8053842B2 (en) 2008-01-29 2011-11-08 Unisantis Electronics (Japan) Ltd. Semiconductor storage device
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
JP5489272B2 (ja) * 2008-01-29 2014-05-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
JP2015060861A (ja) * 2013-09-17 2015-03-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US9087922B2 (en) 2011-06-16 2015-07-21 Samsung Electronics Co., Ltd. Semiconductor devices having vertical device and non-vertical device and methods of forming the same
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
JPWO2023188379A1 (enExample) * 2022-03-31 2023-10-05

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JP2004096065A (ja) * 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2004221242A (ja) * 2003-01-14 2004-08-05 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP2004356469A (ja) * 2003-05-30 2004-12-16 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2005310852A (ja) * 2004-04-19 2005-11-04 Renesas Technology Corp 半導体集積回路装置およびの製造方法
US7615426B2 (en) * 2005-02-22 2009-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. PMOS transistor with discontinuous CESL and method of fabrication
US8405216B2 (en) * 2005-06-29 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for integrated circuits
CN100511476C (zh) * 2005-08-16 2009-07-08 力晶半导体股份有限公司 静态随机存取存储器及其操作方法
US7525163B2 (en) * 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
KR101480286B1 (ko) * 2008-06-20 2015-01-09 삼성전자주식회사 고집적 반도체 소자 및 그 제조방법
US8304840B2 (en) * 2010-07-29 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer structures of a semiconductor device
JP5539916B2 (ja) 2011-03-04 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置
US8809152B2 (en) 2011-11-18 2014-08-19 International Business Machines Corporation Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
KR102191215B1 (ko) 2013-12-20 2020-12-16 삼성전자주식회사 에스램 셀 및 그 제조 방법
US9653563B2 (en) * 2014-04-18 2017-05-16 Taiwan Semiconductor Manufacturing Company Limited Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate
US9397094B2 (en) 2014-09-25 2016-07-19 International Business Machines Corporation Semiconductor structure with an L-shaped bottom plate
KR102384862B1 (ko) * 2014-10-22 2022-04-08 삼성전자주식회사 집적 회로 및 상기 집적 회로의 레이아웃 설계 방법
US10127979B2 (en) 2016-03-11 2018-11-13 Western Digital Technologies, Inc. Memory cell located pulse generator
US10381408B2 (en) * 2016-03-24 2019-08-13 Western Digital Technologies, Inc. Method to fabricate discrete vertical transistors
US10128254B2 (en) 2016-06-20 2018-11-13 Samsung Electronics Co., Ltd. Semiconductor device
US10651178B2 (en) 2018-02-14 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Compact electrical connection that can be used to form an SRAM cell and method of making the same
US11515434B2 (en) 2019-09-17 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupling capacitor and method of making the same
JP2021141185A (ja) * 2020-03-05 2021-09-16 キオクシア株式会社 半導体記憶装置
US11770923B2 (en) * 2021-03-03 2023-09-26 Micron Technology, Inc. Thin film transistor random access memory
US12057390B2 (en) 2022-05-24 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain isolation structure, layout, and method
JP2024081387A (ja) * 2022-12-06 2024-06-18 キオクシア株式会社 半導体装置

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JPH0562474A (ja) 1991-08-29 1993-03-12 Nec Corp 半導体メモリ装置
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JP2003068883A (ja) 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置
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Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177565A (ja) * 2007-01-18 2008-07-31 Samsung Electronics Co Ltd 垂直方向のチャンネルを有するアクセス素子、これを含む半導体装置、及びアクセス素子の形成方法
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
WO2009095999A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096466A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
US8053842B2 (en) 2008-01-29 2011-11-08 Unisantis Electronics (Japan) Ltd. Semiconductor storage device
JP5489272B2 (ja) * 2008-01-29 2014-05-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US7994582B2 (en) 2009-01-30 2011-08-09 Samsung Electronics Co., Ltd. Stacked load-less static random access memory device
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8647947B2 (en) 2009-04-28 2014-02-11 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8609494B2 (en) 2010-06-09 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
US9087922B2 (en) 2011-06-16 2015-07-21 Samsung Electronics Co., Ltd. Semiconductor devices having vertical device and non-vertical device and methods of forming the same
US9461054B2 (en) 2011-06-16 2016-10-04 Samsung Electronics Co., Ltd. Semiconductor devices having vertical device and non-vertical device and methods of forming the same
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US9362353B2 (en) 2011-12-19 2016-06-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9245889B2 (en) 2011-12-19 2016-01-26 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9478545B2 (en) 2011-12-19 2016-10-25 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
JP2015060861A (ja) * 2013-09-17 2015-03-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JPWO2023188379A1 (enExample) * 2022-03-31 2023-10-05

Also Published As

Publication number Publication date
US20090261390A1 (en) 2009-10-22
US20110275207A1 (en) 2011-11-10
US8652895B2 (en) 2014-02-18
US7598133B2 (en) 2009-10-06
KR20040005627A (ko) 2004-01-16
US7981738B2 (en) 2011-07-19
US7829952B2 (en) 2010-11-09
TW200405523A (en) 2004-04-01
US7279754B2 (en) 2007-10-09
US20070173006A1 (en) 2007-07-26
US20040005755A1 (en) 2004-01-08
US20110034017A1 (en) 2011-02-10

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