KR20040005627A - 반도체 기억 장치 및 그 제조방법 - Google Patents
반도체 기억 장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR20040005627A KR20040005627A KR1020030045630A KR20030045630A KR20040005627A KR 20040005627 A KR20040005627 A KR 20040005627A KR 1020030045630 A KR1020030045630 A KR 1020030045630A KR 20030045630 A KR20030045630 A KR 20030045630A KR 20040005627 A KR20040005627 A KR 20040005627A
- Authority
- KR
- South Korea
- Prior art keywords
- misfets
- misfet
- film
- vertical
- driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 418
- 238000004519 manufacturing process Methods 0.000 title claims description 129
- 230000015654 memory Effects 0.000 claims abstract description 189
- 239000010408 film Substances 0.000 claims description 633
- 239000010410 layer Substances 0.000 claims description 201
- 239000000758 substrate Substances 0.000 claims description 155
- 238000000034 method Methods 0.000 claims description 127
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 78
- 230000000295 complement effect Effects 0.000 claims description 77
- 230000002093 peripheral effect Effects 0.000 claims description 73
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 50
- 238000005530 etching Methods 0.000 claims description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 35
- 239000003990 capacitor Substances 0.000 claims description 30
- 238000000059 patterning Methods 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 238000009825 accumulation Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 6
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 4
- 238000006880 cross-coupling reaction Methods 0.000 claims description 3
- 238000004132 cross linking Methods 0.000 claims description 2
- 239000005001 laminate film Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 99
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 99
- 229910052581 Si3N4 Inorganic materials 0.000 description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 42
- 238000005229 chemical vapour deposition Methods 0.000 description 33
- 229910021332 silicide Inorganic materials 0.000 description 28
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 20
- 238000005498 polishing Methods 0.000 description 13
- 239000010936 titanium Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 229940079593 drug Drugs 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000001973 Ficus microcarpa Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002199308 | 2002-07-08 | ||
| JPJP-P-2002-00199308 | 2002-07-08 | ||
| JPJP-P-2003-00054378 | 2003-02-28 | ||
| JP2003054378A JP2004096065A (ja) | 2002-07-08 | 2003-02-28 | 半導体記憶装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040005627A true KR20040005627A (ko) | 2004-01-16 |
Family
ID=30002359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030045630A Withdrawn KR20040005627A (ko) | 2002-07-08 | 2003-07-07 | 반도체 기억 장치 및 그 제조방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (5) | US7279754B2 (enExample) |
| JP (1) | JP2004096065A (enExample) |
| KR (1) | KR20040005627A (enExample) |
| TW (1) | TW200405523A (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004096065A (ja) * | 2002-07-08 | 2004-03-25 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
| JP2004221242A (ja) * | 2003-01-14 | 2004-08-05 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| JP2004356469A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2005310852A (ja) * | 2004-04-19 | 2005-11-04 | Renesas Technology Corp | 半導体集積回路装置およびの製造方法 |
| US7615426B2 (en) * | 2005-02-22 | 2009-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | PMOS transistor with discontinuous CESL and method of fabrication |
| US8405216B2 (en) * | 2005-06-29 | 2013-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure for integrated circuits |
| CN100511476C (zh) * | 2005-08-16 | 2009-07-08 | 力晶半导体股份有限公司 | 静态随机存取存储器及其操作方法 |
| US7525163B2 (en) * | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
| US8058683B2 (en) * | 2007-01-18 | 2011-11-15 | Samsung Electronics Co., Ltd. | Access device having vertical channel and related semiconductor device and a method of fabricating the access device |
| US8183628B2 (en) | 2007-10-29 | 2012-05-22 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor structure and method of fabricating the semiconductor structure |
| US8053842B2 (en) | 2008-01-29 | 2011-11-08 | Unisantis Electronics (Japan) Ltd. | Semiconductor storage device |
| JP5489272B2 (ja) * | 2008-01-29 | 2014-05-14 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体記憶装置 |
| JP5317343B2 (ja) | 2009-04-28 | 2013-10-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| WO2009095999A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体記憶装置 |
| US8598650B2 (en) | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
| KR101480286B1 (ko) * | 2008-06-20 | 2015-01-09 | 삼성전자주식회사 | 고집적 반도체 소자 및 그 제조방법 |
| KR101486426B1 (ko) | 2009-01-30 | 2015-01-26 | 삼성전자주식회사 | 스택형 로드리스 반도체 메모리 소자 |
| JP5356970B2 (ja) | 2009-10-01 | 2013-12-04 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| KR101211442B1 (ko) | 2010-03-08 | 2012-12-12 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | 고체 촬상 장치 |
| US8487357B2 (en) | 2010-03-12 | 2013-07-16 | Unisantis Electronics Singapore Pte Ltd. | Solid state imaging device having high sensitivity and high pixel density |
| JP5066590B2 (ja) | 2010-06-09 | 2012-11-07 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置とその製造方法 |
| JP5087655B2 (ja) | 2010-06-15 | 2012-12-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| US8304840B2 (en) * | 2010-07-29 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer structures of a semiconductor device |
| JP5539916B2 (ja) | 2011-03-04 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR101893848B1 (ko) | 2011-06-16 | 2018-10-04 | 삼성전자주식회사 | 수직 소자 및 비-수직 소자를 갖는 반도체 소자 및 그 형성 방법 |
| US8564034B2 (en) | 2011-09-08 | 2013-10-22 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
| US8669601B2 (en) | 2011-09-15 | 2014-03-11 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor |
| US8809152B2 (en) | 2011-11-18 | 2014-08-19 | International Business Machines Corporation | Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices |
| US8916478B2 (en) | 2011-12-19 | 2014-12-23 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US8772175B2 (en) | 2011-12-19 | 2014-07-08 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US8748938B2 (en) | 2012-02-20 | 2014-06-10 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
| JP6120738B2 (ja) * | 2013-09-17 | 2017-04-26 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| KR102191215B1 (ko) | 2013-12-20 | 2020-12-16 | 삼성전자주식회사 | 에스램 셀 및 그 제조 방법 |
| US9653563B2 (en) * | 2014-04-18 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company Limited | Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate |
| US9397094B2 (en) | 2014-09-25 | 2016-07-19 | International Business Machines Corporation | Semiconductor structure with an L-shaped bottom plate |
| KR102384862B1 (ko) * | 2014-10-22 | 2022-04-08 | 삼성전자주식회사 | 집적 회로 및 상기 집적 회로의 레이아웃 설계 방법 |
| US10127979B2 (en) | 2016-03-11 | 2018-11-13 | Western Digital Technologies, Inc. | Memory cell located pulse generator |
| US10381408B2 (en) * | 2016-03-24 | 2019-08-13 | Western Digital Technologies, Inc. | Method to fabricate discrete vertical transistors |
| US10128254B2 (en) | 2016-06-20 | 2018-11-13 | Samsung Electronics Co., Ltd. | Semiconductor device |
| US10651178B2 (en) | 2018-02-14 | 2020-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Compact electrical connection that can be used to form an SRAM cell and method of making the same |
| US11515434B2 (en) | 2019-09-17 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Decoupling capacitor and method of making the same |
| JP2021141185A (ja) * | 2020-03-05 | 2021-09-16 | キオクシア株式会社 | 半導体記憶装置 |
| US11770923B2 (en) * | 2021-03-03 | 2023-09-26 | Micron Technology, Inc. | Thin film transistor random access memory |
| JPWO2023188379A1 (enExample) * | 2022-03-31 | 2023-10-05 | ||
| US12057390B2 (en) | 2022-05-24 | 2024-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain isolation structure, layout, and method |
| JP2024081387A (ja) * | 2022-12-06 | 2024-06-18 | キオクシア株式会社 | 半導体装置 |
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| US5132771A (en) | 1985-12-27 | 1992-07-21 | Hitachi, Ltd. | Semiconductor memory device having flip-flop circuits |
| JP2927463B2 (ja) | 1989-09-28 | 1999-07-28 | 株式会社日立製作所 | 半導体記憶装置 |
| KR100199258B1 (ko) | 1990-02-09 | 1999-06-15 | 가나이 쓰도무 | 반도체집적회로장치 |
| JPH0562474A (ja) | 1991-08-29 | 1993-03-12 | Nec Corp | 半導体メモリ装置 |
| JPH05206394A (ja) | 1992-01-24 | 1993-08-13 | Mitsubishi Electric Corp | 電界効果トランジスタおよびその製造方法 |
| US5364810A (en) | 1992-07-28 | 1994-11-15 | Motorola, Inc. | Methods of forming a vertical field-effect transistor and a semiconductor memory cell |
| JPH06104405A (ja) | 1992-09-22 | 1994-04-15 | Toshiba Corp | スタティック型メモリ |
| JPH09260510A (ja) * | 1996-01-17 | 1997-10-03 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| KR100474620B1 (ko) * | 1996-10-14 | 2005-05-16 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 오프세트가낮은편향회로 |
| TW454339B (en) * | 1997-06-20 | 2001-09-11 | Hitachi Ltd | Semiconductor integrated circuit apparatus and its fabricating method |
| SG79292A1 (en) * | 1998-12-11 | 2001-03-20 | Hitachi Ltd | Semiconductor integrated circuit and its manufacturing method |
| JP2001203263A (ja) * | 2000-01-20 | 2001-07-27 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
| JP2002083949A (ja) * | 2000-09-07 | 2002-03-22 | Nec Corp | Ｃｍｏｓイメージセンサ及びその製造方法 |
| JP2002203913A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Ltd | 半導体記憶装置の製造方法および半導体記憶装置 |
| JP2003068883A (ja) | 2001-08-24 | 2003-03-07 | Hitachi Ltd | 半導体記憶装置 |
| US7244977B2 (en) | 2001-10-24 | 2007-07-17 | Elpida Memory, Inc. | Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device |
| JP3948292B2 (ja) | 2002-02-01 | 2007-07-25 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
| JP2004031448A (ja) * | 2002-06-21 | 2004-01-29 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| JP2004096065A (ja) * | 2002-07-08 | 2004-03-25 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
| JP5206394B2 (ja) | 2008-12-22 | 2013-06-12 | 三菱自動車工業株式会社 | 二次電池ユニット |
-
2003
- 2003-02-28 JP JP2003054378A patent/JP2004096065A/ja not_active Withdrawn
- 2003-04-21 TW TW092109213A patent/TW200405523A/zh unknown
- 2003-06-20 US US10/465,550 patent/US7279754B2/en not_active Expired - Lifetime
- 2003-07-07 KR KR1020030045630A patent/KR20040005627A/ko not_active Withdrawn
-
2007
- 2007-03-07 US US11/714,865 patent/US7598133B2/en not_active Expired - Fee Related
-
2009
- 2009-06-25 US US12/491,756 patent/US7829952B2/en not_active Expired - Lifetime
-
2010
- 2010-10-22 US US12/909,878 patent/US7981738B2/en not_active Expired - Lifetime
-
2011
- 2011-07-05 US US13/176,196 patent/US8652895B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20090261390A1 (en) | 2009-10-22 |
| US20110275207A1 (en) | 2011-11-10 |
| US8652895B2 (en) | 2014-02-18 |
| US7598133B2 (en) | 2009-10-06 |
| US7981738B2 (en) | 2011-07-19 |
| US7829952B2 (en) | 2010-11-09 |
| JP2004096065A (ja) | 2004-03-25 |
| TW200405523A (en) | 2004-04-01 |
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