SG90212A1 - Charge pump system having multiple independently activated charge pumps and corresponding method - Google Patents
Charge pump system having multiple independently activated charge pumps and corresponding methodInfo
- Publication number
- SG90212A1 SG90212A1 SG200007131A SG200007131A SG90212A1 SG 90212 A1 SG90212 A1 SG 90212A1 SG 200007131 A SG200007131 A SG 200007131A SG 200007131 A SG200007131 A SG 200007131A SG 90212 A1 SG90212 A1 SG 90212A1
- Authority
- SG
- Singapore
- Prior art keywords
- pump system
- corresponding method
- multiple independently
- independently activated
- charge
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/460,820 US6275096B1 (en) | 1999-12-14 | 1999-12-14 | Charge pump system having multiple independently activated charge pumps and corresponding method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG90212A1 true SG90212A1 (en) | 2002-07-23 |
Family
ID=23830193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200007131A SG90212A1 (en) | 1999-12-14 | 2000-12-04 | Charge pump system having multiple independently activated charge pumps and corresponding method |
Country Status (8)
Country | Link |
---|---|
US (1) | US6275096B1 (zh) |
EP (1) | EP1245073B1 (zh) |
KR (1) | KR100433327B1 (zh) |
CN (1) | CN1164021C (zh) |
DE (1) | DE60011471T2 (zh) |
SG (1) | SG90212A1 (zh) |
TW (2) | TW550877B (zh) |
WO (1) | WO2001045239A1 (zh) |
Families Citing this family (53)
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KR100319164B1 (ko) * | 1997-12-31 | 2002-04-22 | 박종섭 | 다중레벨검출에의한다중구동장치및그방법 |
AU780228B2 (en) * | 1999-12-30 | 2005-03-10 | Ge Transportation Systems Global Signaling, Llc | Vital "and" gate apparatus and method |
DE50305682D1 (de) | 2002-04-03 | 2006-12-28 | Infineon Technologies Ag | Spannungsregleranordnung |
KR100432890B1 (ko) * | 2002-06-07 | 2004-05-22 | 삼성전자주식회사 | 안정적으로 승압 전압을 발생하는 승압 전압 발생 회로 및그 승압 전압 제어 방법 |
JP3609805B2 (ja) * | 2002-07-11 | 2005-01-12 | 松下電器産業株式会社 | ブロック間インタフェース回路およびシステムlsi |
ITMI20021902A1 (it) * | 2002-09-06 | 2004-03-07 | Atmel Corp | Architettura di pompa di carica modulare |
ITMI20022268A1 (it) * | 2002-10-25 | 2004-04-26 | Atmel Corp | Circuito pompa di cariche variabile con carico dinamico |
KR20040047173A (ko) * | 2002-11-29 | 2004-06-05 | 주식회사 하이닉스반도체 | 노이즈를 감소시킨 전압 발생장치 |
KR100542708B1 (ko) * | 2003-05-28 | 2006-01-11 | 주식회사 하이닉스반도체 | 고전압 발생기 |
KR100549345B1 (ko) * | 2003-08-25 | 2006-02-02 | 주식회사 하이닉스반도체 | 고전압 공급 회로 및 고전압 공급 방법 |
US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
KR100568587B1 (ko) * | 2003-11-24 | 2006-04-07 | 삼성전자주식회사 | 승압전압 안정화장치 및 방법, 이를 갖는 승압전압생성장치 및 방법 |
KR100572323B1 (ko) * | 2003-12-11 | 2006-04-19 | 삼성전자주식회사 | 멀티레벨 고전압 발생장치 |
KR100633329B1 (ko) * | 2004-05-06 | 2006-10-12 | 주식회사 하이닉스반도체 | 반도체 소자의 승압전압 생성회로 |
KR100605575B1 (ko) * | 2004-06-30 | 2006-07-31 | 주식회사 하이닉스반도체 | 테스트 모드시 전하 펌프에서의 토글링 주기를 변경할 수있는 내부 전압 발생 회로 및 방법 |
DE602004027024D1 (de) | 2004-08-05 | 2010-06-17 | Bosch Gmbh Robert | Kommunikationskontrolleur für FlexRay-Netze |
US7898319B2 (en) * | 2004-12-06 | 2011-03-01 | Etron Technology, Inc. | Efficiency improvement in charge pump system for low power application |
KR100739241B1 (ko) * | 2005-06-24 | 2007-07-12 | 주식회사 하이닉스반도체 | 플래시 메모리 장치의 블록 워드라인 프리챠지 회로 |
US7710193B2 (en) * | 2005-09-29 | 2010-05-04 | Hynix Semiconductor, Inc. | High voltage generator and word line driving high voltage generator of memory device |
US7443230B2 (en) * | 2006-08-10 | 2008-10-28 | Elite Semiconductor Memory Technology Inc. | Charge pump circuit |
JP2008193766A (ja) * | 2007-02-01 | 2008-08-21 | Spansion Llc | 電圧発生回路及びその制御方法 |
US7613051B2 (en) | 2007-03-14 | 2009-11-03 | Apple Inc. | Interleaving charge pumps for programmable memories |
US8115462B2 (en) * | 2007-06-20 | 2012-02-14 | Atmel Corporation | Voltage regulator for an integrated circuit |
US8072256B2 (en) * | 2007-09-14 | 2011-12-06 | Mosaid Technologies Incorporated | Dynamic random access memory and boosted voltage producer therefor |
KR100913959B1 (ko) * | 2007-12-27 | 2009-08-26 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
US8710907B2 (en) | 2008-06-24 | 2014-04-29 | Sandisk Technologies Inc. | Clock generator circuit for a charge pump |
US8816659B2 (en) | 2010-08-06 | 2014-08-26 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
CN101674012B (zh) * | 2009-10-14 | 2012-07-25 | 上海宏力半导体制造有限公司 | 电荷泵电路 |
CN101764519B (zh) * | 2009-11-18 | 2012-12-26 | 上海宏力半导体制造有限公司 | 一种电荷泵电路 |
US9423814B2 (en) * | 2010-03-16 | 2016-08-23 | Macronix International Co., Ltd. | Apparatus of supplying power while maintaining its output power signal and method therefor |
KR101145792B1 (ko) * | 2010-03-29 | 2012-05-16 | 에스케이하이닉스 주식회사 | 내부전압 생성회로 |
US8339185B2 (en) | 2010-12-20 | 2012-12-25 | Sandisk 3D Llc | Charge pump system that dynamically selects number of active stages |
US9413362B2 (en) | 2011-01-18 | 2016-08-09 | Peregrine Semiconductor Corporation | Differential charge pump |
US9768683B2 (en) | 2011-01-18 | 2017-09-19 | Peregrine Semiconductor Corporation | Differential charge pump |
US9024679B2 (en) | 2011-07-25 | 2015-05-05 | Macronix International Co., Ltd. | Standby charge pump system |
US8699247B2 (en) * | 2011-09-09 | 2014-04-15 | Sandisk Technologies Inc. | Charge pump system dynamically reconfigurable for read and program |
US8836412B2 (en) | 2013-02-11 | 2014-09-16 | Sandisk 3D Llc | Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple |
US8981835B2 (en) | 2013-06-18 | 2015-03-17 | Sandisk Technologies Inc. | Efficient voltage doubler |
US9024680B2 (en) | 2013-06-24 | 2015-05-05 | Sandisk Technologies Inc. | Efficiency for charge pumps with low supply voltages |
US9077238B2 (en) | 2013-06-25 | 2015-07-07 | SanDisk Technologies, Inc. | Capacitive regulation of charge pumps without refresh operation interruption |
US9007046B2 (en) | 2013-06-27 | 2015-04-14 | Sandisk Technologies Inc. | Efficient high voltage bias regulation circuit |
US9083231B2 (en) | 2013-09-30 | 2015-07-14 | Sandisk Technologies Inc. | Amplitude modulation for pass gate to improve charge pump efficiency |
US9154027B2 (en) | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
KR101743674B1 (ko) | 2014-11-11 | 2017-06-08 | 삼성전자주식회사 | 전하펌프 기반의 인공 번개 발전기 및 그 제조방법 |
JP2016149858A (ja) * | 2015-02-12 | 2016-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20160118026A (ko) * | 2015-04-01 | 2016-10-11 | 에스케이하이닉스 주식회사 | 내부전압 생성회로 |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
US10097086B2 (en) * | 2016-10-12 | 2018-10-09 | Cypress Semiconductor Corporation | Fast ramp low supply charge pump circuits |
US9906221B1 (en) * | 2016-12-30 | 2018-02-27 | Delta Electronics, Inc. | Driving circuit of a power circuit |
US10250132B2 (en) * | 2017-06-09 | 2019-04-02 | Nanya Technology Corporation | Voltage system and operating method thereof |
KR102581100B1 (ko) * | 2019-03-07 | 2023-09-20 | 삼성전기주식회사 | 차지 펌프 기반의 네가티브 전압 회로 |
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-
1999
- 1999-12-14 US US09/460,820 patent/US6275096B1/en not_active Expired - Lifetime
-
2000
- 2000-11-15 TW TW089124175A patent/TW550877B/zh not_active IP Right Cessation
- 2000-12-04 SG SG200007131A patent/SG90212A1/en unknown
- 2000-12-12 CN CNB001352512A patent/CN1164021C/zh not_active Expired - Lifetime
- 2000-12-13 DE DE60011471T patent/DE60011471T2/de not_active Expired - Lifetime
- 2000-12-13 WO PCT/US2000/034040 patent/WO2001045239A1/en active IP Right Grant
- 2000-12-13 KR KR10-2002-7007476A patent/KR100433327B1/ko not_active IP Right Cessation
- 2000-12-13 EP EP00986417A patent/EP1245073B1/en not_active Expired - Lifetime
-
2001
- 2001-05-08 TW TW089126724A patent/TW579620B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE60011471T2 (de) | 2005-06-09 |
WO2001045239A1 (en) | 2001-06-21 |
CN1320889A (zh) | 2001-11-07 |
TW579620B (en) | 2004-03-11 |
EP1245073A1 (en) | 2002-10-02 |
CN1164021C (zh) | 2004-08-25 |
US6275096B1 (en) | 2001-08-14 |
KR20020074165A (ko) | 2002-09-28 |
DE60011471D1 (de) | 2004-07-15 |
TW550877B (en) | 2003-09-01 |
EP1245073B1 (en) | 2004-06-09 |
KR100433327B1 (ko) | 2004-05-28 |
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