DE60011471D1 - Ladungspumpensystem mit mehreren unabhängig aktivierten ladungspumpen und verfahren - Google Patents

Ladungspumpensystem mit mehreren unabhängig aktivierten ladungspumpen und verfahren

Info

Publication number
DE60011471D1
DE60011471D1 DE60011471T DE60011471T DE60011471D1 DE 60011471 D1 DE60011471 D1 DE 60011471D1 DE 60011471 T DE60011471 T DE 60011471T DE 60011471 T DE60011471 T DE 60011471T DE 60011471 D1 DE60011471 D1 DE 60011471D1
Authority
DE
Germany
Prior art keywords
several
pump system
charge
charge pump
initiatively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60011471T
Other languages
English (en)
Other versions
DE60011471T2 (de
Inventor
L Hsu
Oliver Weinfurtner
R Wordeman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
International Business Machines Corp
Original Assignee
International Business Machines Corp
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp, Infineon Technologies North America Corp filed Critical International Business Machines Corp
Publication of DE60011471D1 publication Critical patent/DE60011471D1/de
Application granted granted Critical
Publication of DE60011471T2 publication Critical patent/DE60011471T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
DE60011471T 1999-12-14 2000-12-13 Ladungspumpensystem mit mehreren unabhängig aktivierten ladungspumpen und verfahren Expired - Lifetime DE60011471T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/460,820 US6275096B1 (en) 1999-12-14 1999-12-14 Charge pump system having multiple independently activated charge pumps and corresponding method
US460820 1999-12-14
PCT/US2000/034040 WO2001045239A1 (en) 1999-12-14 2000-12-13 Charge pump system having multiple independently activated charge pumps and corresponding method

Publications (2)

Publication Number Publication Date
DE60011471D1 true DE60011471D1 (de) 2004-07-15
DE60011471T2 DE60011471T2 (de) 2005-06-09

Family

ID=23830193

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60011471T Expired - Lifetime DE60011471T2 (de) 1999-12-14 2000-12-13 Ladungspumpensystem mit mehreren unabhängig aktivierten ladungspumpen und verfahren

Country Status (8)

Country Link
US (1) US6275096B1 (de)
EP (1) EP1245073B1 (de)
KR (1) KR100433327B1 (de)
CN (1) CN1164021C (de)
DE (1) DE60011471T2 (de)
SG (1) SG90212A1 (de)
TW (2) TW550877B (de)
WO (1) WO2001045239A1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100319164B1 (ko) * 1997-12-31 2002-04-22 박종섭 다중레벨검출에의한다중구동장치및그방법
CA2395337C (en) * 1999-12-30 2009-05-19 Ge Harris Railway Electronics, Llc Vital "and" gate apparatus and method
DE50305682D1 (de) * 2002-04-03 2006-12-28 Infineon Technologies Ag Spannungsregleranordnung
KR100432890B1 (ko) * 2002-06-07 2004-05-22 삼성전자주식회사 안정적으로 승압 전압을 발생하는 승압 전압 발생 회로 및그 승압 전압 제어 방법
JP3609805B2 (ja) * 2002-07-11 2005-01-12 松下電器産業株式会社 ブロック間インタフェース回路およびシステムlsi
ITMI20021902A1 (it) * 2002-09-06 2004-03-07 Atmel Corp Architettura di pompa di carica modulare
ITMI20022268A1 (it) * 2002-10-25 2004-04-26 Atmel Corp Circuito pompa di cariche variabile con carico dinamico
KR20040047173A (ko) * 2002-11-29 2004-06-05 주식회사 하이닉스반도체 노이즈를 감소시킨 전압 발생장치
KR100542708B1 (ko) * 2003-05-28 2006-01-11 주식회사 하이닉스반도체 고전압 발생기
KR100549345B1 (ko) * 2003-08-25 2006-02-02 주식회사 하이닉스반도체 고전압 공급 회로 및 고전압 공급 방법
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
KR100568587B1 (ko) * 2003-11-24 2006-04-07 삼성전자주식회사 승압전압 안정화장치 및 방법, 이를 갖는 승압전압생성장치 및 방법
KR100572323B1 (ko) * 2003-12-11 2006-04-19 삼성전자주식회사 멀티레벨 고전압 발생장치
KR100633329B1 (ko) * 2004-05-06 2006-10-12 주식회사 하이닉스반도체 반도체 소자의 승압전압 생성회로
KR100605575B1 (ko) * 2004-06-30 2006-07-31 주식회사 하이닉스반도체 테스트 모드시 전하 펌프에서의 토글링 주기를 변경할 수있는 내부 전압 발생 회로 및 방법
ATE467288T1 (de) * 2004-08-05 2010-05-15 Bosch Gmbh Robert Kommunikationskontrolleur für flexray-netze
US7898319B2 (en) * 2004-12-06 2011-03-01 Etron Technology, Inc. Efficiency improvement in charge pump system for low power application
KR100739241B1 (ko) * 2005-06-24 2007-07-12 주식회사 하이닉스반도체 플래시 메모리 장치의 블록 워드라인 프리챠지 회로
US7710193B2 (en) * 2005-09-29 2010-05-04 Hynix Semiconductor, Inc. High voltage generator and word line driving high voltage generator of memory device
US7443230B2 (en) * 2006-08-10 2008-10-28 Elite Semiconductor Memory Technology Inc. Charge pump circuit
JP2008193766A (ja) * 2007-02-01 2008-08-21 Spansion Llc 電圧発生回路及びその制御方法
US7613051B2 (en) 2007-03-14 2009-11-03 Apple Inc. Interleaving charge pumps for programmable memories
US8115462B2 (en) * 2007-06-20 2012-02-14 Atmel Corporation Voltage regulator for an integrated circuit
US8072256B2 (en) * 2007-09-14 2011-12-06 Mosaid Technologies Incorporated Dynamic random access memory and boosted voltage producer therefor
KR100913959B1 (ko) * 2007-12-27 2009-08-26 주식회사 하이닉스반도체 반도체 메모리 소자
US8710907B2 (en) 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US8816659B2 (en) 2010-08-06 2014-08-26 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
CN101674012B (zh) * 2009-10-14 2012-07-25 上海宏力半导体制造有限公司 电荷泵电路
CN101764519B (zh) * 2009-11-18 2012-12-26 上海宏力半导体制造有限公司 一种电荷泵电路
US9423814B2 (en) * 2010-03-16 2016-08-23 Macronix International Co., Ltd. Apparatus of supplying power while maintaining its output power signal and method therefor
KR101145792B1 (ko) * 2010-03-29 2012-05-16 에스케이하이닉스 주식회사 내부전압 생성회로
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US9264053B2 (en) 2011-01-18 2016-02-16 Peregrine Semiconductor Corporation Variable frequency charge pump
US9768683B2 (en) 2011-01-18 2017-09-19 Peregrine Semiconductor Corporation Differential charge pump
US9024679B2 (en) 2011-07-25 2015-05-05 Macronix International Co., Ltd. Standby charge pump system
US8699247B2 (en) * 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
KR101743674B1 (ko) 2014-11-11 2017-06-08 삼성전자주식회사 전하펌프 기반의 인공 번개 발전기 및 그 제조방법
JP2016149858A (ja) * 2015-02-12 2016-08-18 ルネサスエレクトロニクス株式会社 半導体装置
KR20160118026A (ko) * 2015-04-01 2016-10-11 에스케이하이닉스 주식회사 내부전압 생성회로
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US10097086B2 (en) * 2016-10-12 2018-10-09 Cypress Semiconductor Corporation Fast ramp low supply charge pump circuits
US9906221B1 (en) * 2016-12-30 2018-02-27 Delta Electronics, Inc. Driving circuit of a power circuit
US10250132B2 (en) * 2017-06-09 2019-04-02 Nanya Technology Corporation Voltage system and operating method thereof
KR102581100B1 (ko) * 2019-03-07 2023-09-20 삼성전기주식회사 차지 펌프 기반의 네가티브 전압 회로

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105563A (ja) * 1981-12-17 1983-06-23 Mitsubishi Electric Corp 基板バイアス発生回路
JPH0817033B2 (ja) * 1988-12-08 1996-02-21 三菱電機株式会社 基板バイアス電位発生回路
KR910004737B1 (ko) * 1988-12-19 1991-07-10 삼성전자 주식회사 백바이어스전압 발생회로
KR920010749B1 (ko) * 1989-06-10 1992-12-14 삼성전자 주식회사 반도체 집적소자의 내부전압 변환회로
JP2557271B2 (ja) * 1990-04-06 1996-11-27 三菱電機株式会社 内部降圧電源電圧を有する半導体装置における基板電圧発生回路
US5220534A (en) * 1990-07-31 1993-06-15 Texas Instruments, Incorporated Substrate bias generator system
KR950002015B1 (ko) * 1991-12-23 1995-03-08 삼성전자주식회사 하나의 오실레이터에 의해 동작되는 정전원 발생회로
JP2618150B2 (ja) * 1992-03-24 1997-06-11 東京瓦斯株式会社 直流電源装置
US5258662A (en) * 1992-04-06 1993-11-02 Linear Technology Corp. Micropower gate charge pump for power MOSFETS
US5337284A (en) * 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor
JP3003437B2 (ja) * 1992-11-20 2000-01-31 モトローラ株式会社 電圧変換装置
US6031411A (en) * 1993-06-28 2000-02-29 Texas Instruments Incorporated Low power substrate bias circuit
JP3162564B2 (ja) * 1993-08-17 2001-05-08 株式会社東芝 昇圧回路及び昇圧回路を備えた不揮発性半導体記憶装置
US5410510A (en) 1993-10-04 1995-04-25 Texas Instruments Inc. Process of making and a DRAM standby charge pump with oscillator having fuse selectable frequencies
DE69312305T2 (de) * 1993-12-28 1998-01-15 Sgs Thomson Microelectronics Spannungsbooster, insbesondere für nichtflüchtige Speicher
JPH08237938A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 内部電圧発生回路
US5602794A (en) * 1995-09-29 1997-02-11 Intel Corporation Variable stage charge pump
KR0172337B1 (ko) * 1995-11-13 1999-03-30 김광호 반도체 메모리장치의 내부승압전원 발생회로
KR0172370B1 (ko) 1995-12-30 1999-03-30 김광호 다단펌핑 머지드 펌핑전압 발생회로
US5734291A (en) 1996-03-11 1998-03-31 Telcom Semiconductor, Inc. Power saving technique for battery powered devices
JP2917914B2 (ja) * 1996-05-17 1999-07-12 日本電気株式会社 昇圧回路
JPH09312095A (ja) * 1996-05-23 1997-12-02 Toshiba Corp 半導体集積回路
JPH1050088A (ja) * 1996-08-05 1998-02-20 Ricoh Co Ltd 半導体装置
JPH10201222A (ja) 1996-12-27 1998-07-31 Fujitsu Ltd 昇圧回路及びこれを用いた半導体装置
JP3378457B2 (ja) 1997-02-26 2003-02-17 株式会社東芝 半導体装置
US6107862A (en) 1997-02-28 2000-08-22 Seiko Instruments Inc. Charge pump circuit
US5818766A (en) 1997-03-05 1998-10-06 Integrated Silicon Solution Inc. Drain voltage pump circuit for nonvolatile memory device
KR100264959B1 (ko) * 1997-04-30 2000-10-02 윤종용 반도체 장치의 고전압발생회로
JP3346273B2 (ja) * 1998-04-24 2002-11-18 日本電気株式会社 ブースト回路および半導体記憶装置

Also Published As

Publication number Publication date
EP1245073B1 (de) 2004-06-09
SG90212A1 (en) 2002-07-23
CN1164021C (zh) 2004-08-25
TW550877B (en) 2003-09-01
TW579620B (en) 2004-03-11
KR20020074165A (ko) 2002-09-28
US6275096B1 (en) 2001-08-14
CN1320889A (zh) 2001-11-07
EP1245073A1 (de) 2002-10-02
DE60011471T2 (de) 2005-06-09
WO2001045239A1 (en) 2001-06-21
KR100433327B1 (ko) 2004-05-28

Similar Documents

Publication Publication Date Title
DE60011471D1 (de) Ladungspumpensystem mit mehreren unabhängig aktivierten ladungspumpen und verfahren
DE69938369D1 (de) Pumpe und Regelungssystem und dessen Verfahren
DE60035320D1 (de) Kommunikationssystem und Verfahren, Kommunikationsgerät und Verfahren
GB2416004B (en) Pump,well pumping system,and method
DE60205623T2 (de) Anhauslieferungsbehälter und anhauslieferungsgepäcksammel/-liefersystem und verfahren dafür
BR0005321B1 (pt) bomba peristÁltica e cartucho.
DE60220037D1 (de) Molekulares speichersystem und verfahren
DE602004009228D1 (de) Mobilendgerät mit Ortungssystem und Ortungsverfahren
DE60311210D1 (de) Mikrofluidisches Pumpensystem
DE60039085D1 (de) Turbomolekularpumpe
BR0000136B1 (pt) Processo e sistema para bombear fluidos
DE602004021429D1 (de) Steuersystem und -verfahren für fluidpumpe
DE50008346D1 (de) Ladungspumpe
DE60023880D1 (de) Wärmeaustauschsystem mit elektrohydrodynamischen induzierten pumpen und verfahren
DE60021739D1 (de) Kurzcode-detektionsverfahren
DE60012642D1 (de) Anschlusselement, Verbinder und Verfahren zu dessen Zusammenbau
ITMO20030019A0 (it) Apparato e metodo di elettrostimolazione e relativo supporto dati.
FI20021292A (fi) SIM-korttien hallintajärjestelmä
FI20031505A0 (fi) Menetelmä tilaajayhteyden järjestämiseksi ja menetelmää soveltava järjestelmä
DE10083435D2 (de) Radialkolbenpumpe
DE69822421D1 (de) Tintenzuführsystem, Spüleinrichtung und Verfahren
AU3547200A (en) Electro-osmotic pumping system and method
DE50011662D1 (de) Radialkolbenpumpe
ATA111599A (de) Radialkolbenpumpe
DE60037554D1 (de) Turbomolekularpumpe

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE

Owner name: INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCHAFT

8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

Owner name: INTERNATIONAL BUSINESS MACHINES CORP., ARMONK,, US