DE60220037D1 - Molekulares speichersystem und verfahren - Google Patents

Molekulares speichersystem und verfahren

Info

Publication number
DE60220037D1
DE60220037D1 DE60220037T DE60220037T DE60220037D1 DE 60220037 D1 DE60220037 D1 DE 60220037D1 DE 60220037 T DE60220037 T DE 60220037T DE 60220037 T DE60220037 T DE 60220037T DE 60220037 D1 DE60220037 D1 DE 60220037D1
Authority
DE
Germany
Prior art keywords
storage system
molecular storage
molecular
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60220037T
Other languages
English (en)
Other versions
DE60220037T2 (de
Inventor
Yong Chen
Robert G Walmsley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE60220037D1 publication Critical patent/DE60220037D1/de
Application granted granted Critical
Publication of DE60220037T2 publication Critical patent/DE60220037T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/874—Probe tip array
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument
DE60220037T 2001-03-27 2002-03-21 Molekulares speichersystem und verfahren Expired - Lifetime DE60220037T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/819,402 US6542400B2 (en) 2001-03-27 2001-03-27 Molecular memory systems and methods
US819402 2001-03-27
PCT/US2002/008863 WO2002078005A2 (en) 2001-03-27 2002-03-21 Molecular memory systems and methods

Publications (2)

Publication Number Publication Date
DE60220037D1 true DE60220037D1 (de) 2007-06-21
DE60220037T2 DE60220037T2 (de) 2008-02-14

Family

ID=25228051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60220037T Expired - Lifetime DE60220037T2 (de) 2001-03-27 2002-03-21 Molekulares speichersystem und verfahren

Country Status (6)

Country Link
US (1) US6542400B2 (de)
EP (1) EP1374246B1 (de)
JP (1) JP4171304B2 (de)
KR (1) KR100867220B1 (de)
DE (1) DE60220037T2 (de)
WO (1) WO2002078005A2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US20020138301A1 (en) * 2001-03-22 2002-09-26 Thanos Karras Integration of a portal into an application service provider data archive and/or web based viewer
US6995312B2 (en) * 2001-03-29 2006-02-07 Hewlett-Packard Development Company, L.P. Bistable molecular switches and associated methods
US6928042B2 (en) * 2001-07-06 2005-08-09 Hewlett-Packard Development Company, L.P. Data storage device including nanotube electron sources
TW506083B (en) * 2001-11-28 2002-10-11 Ind Tech Res Inst Method of using nano-tube to increase semiconductor device capacitance
DE60230110D1 (de) * 2002-02-25 2009-01-15 St Microelectronics Srl Optisch lesbarer Molekularspeicher hergestellt mit Hilfe von Kohlenstoff-Nanoröhren und Verfahren zum Speichern von Information in diesem Molekularspeicher
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US6982898B2 (en) * 2002-10-15 2006-01-03 Nanochip, Inc. Molecular memory integrated circuit utilizing non-vibrating cantilevers
US20040150472A1 (en) * 2002-10-15 2004-08-05 Rust Thomas F. Fault tolerant micro-electro mechanical actuators
ITBO20020759A1 (it) * 2002-12-04 2004-06-05 Fabio Biscarini Procedimento per lo stoccaggio di informazione ad
US6961299B2 (en) * 2002-12-05 2005-11-01 Hewlett-Packard Development Company, L.P. Storage device
US7057997B2 (en) * 2003-04-23 2006-06-06 Hewlett-Packard Development Company, L.P. Class of electron beam based data storage devices and methods of use thereof
WO2004105011A1 (en) * 2003-05-26 2004-12-02 Nardy Cramm Information storage basec on carbon nanotubes
FR2856184B1 (fr) * 2003-06-13 2008-04-11 Commissariat Energie Atomique Dispositif d'enregistrement de donnees comportant des micro-pointes et un support d'enregistrement
US7593309B2 (en) * 2003-07-03 2009-09-22 Commissariat A L'energie Atomique Method for recording data and device for carrying out the same comprising a deformable memory support
EP1580739A1 (de) * 2004-03-23 2005-09-28 DSM IP Assets B.V. Eine Funktionsschicht enthaltender Gegenstand
US7499309B1 (en) * 2004-04-02 2009-03-03 Spansion Llc Using organic semiconductor memory in conjunction with a MEMS actuator for an ultra high density memory
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US20050232061A1 (en) * 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7002820B2 (en) * 2004-06-17 2006-02-21 Hewlett-Packard Development Company, L.P. Semiconductor storage device
FR2876831B1 (fr) * 2004-10-15 2007-02-02 Commissariat Energie Atomique Dispositif d'enregistrement de donnees comportant des nanotubes de carbone inclines et procede de fabrication
KR100734832B1 (ko) * 2004-12-15 2007-07-03 한국전자통신연구원 금속 산화막의 전류 스위칭을 이용한 정보 저장 장치
FR2880980B1 (fr) 2005-01-17 2007-03-16 Commissariat Energie Atomique Dispositif d'enregistrement de donnees comportant des micro-pointes dont l'ensemble des extremites libres forme une surface convexe et procede de fabrication
US20060238185A1 (en) * 2005-04-08 2006-10-26 Kozicki Michael N Probe storage device, system including the device, and methods of forming and using same
US20060291364A1 (en) * 2005-04-25 2006-12-28 Kozicki Michael N Solid electrolyte probe storage device, system including the device, and methods of forming and using same
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US7357538B2 (en) * 2006-01-25 2008-04-15 Cooper Technologies Company Method and apparatus for providing light
FR2901909B1 (fr) * 2006-05-30 2008-10-24 Commissariat Energie Atomique Memoire de donnees inscriptible et lisible par micropointes, structuree en caissons, et procede de fabrication
JP2008243238A (ja) * 2007-03-23 2008-10-09 Elpida Memory Inc 分子電池メモリ装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833894A (en) 1973-06-20 1974-09-03 Ibm Organic memory device
US4188434A (en) * 1978-05-15 1980-02-12 Storage Technology Corporation Lubricant for a magnetic member
DE3752269T2 (de) * 1986-12-24 1999-09-30 Canon Kk Aufzeichnungsgerät und Wiedergabegerät
JP2557964B2 (ja) 1988-01-22 1996-11-27 インターナシヨナル・ビジネス・マシーンズ・コーポレイーシヨン データ記憶装置
JP2756254B2 (ja) 1988-03-25 1998-05-25 キヤノン株式会社 記録装置及び再生装置
NL8802335A (nl) 1988-09-21 1990-04-17 Philips Nv Werkwijze en inrichting voor het op sub-mikron schaal bewerken van een materiaal-oppervlak.
US5264876A (en) * 1989-08-10 1993-11-23 Canon Kabushiki Kaisha Recording medium, method for preparing the same, recording and reproducing device, and recording, reproducing and erasing method by use of such recording medium
JPH05282706A (ja) * 1991-08-01 1993-10-29 Canon Inc 光記録媒体とその製造方法及び光記録媒体用基板
EP0591595A1 (de) 1992-10-08 1994-04-13 International Business Machines Corporation Molekulare Aufzeichnungs-/Wiedergabemethode und Aufzeichnungsmedium
JP3053986B2 (ja) 1993-01-21 2000-06-19 キヤノン株式会社 記録再生装置
US5453970A (en) 1993-07-13 1995-09-26 Rust; Thomas F. Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe
US5801472A (en) 1995-08-18 1998-09-01 Hitchi, Ltd. Micro-fabricated device with integrated electrostatic actuator
US6195313B1 (en) 1997-08-29 2001-02-27 Canon Kabushiki Kaisha Tracking mechanism and method using probes for information recording/reproducing apparatus
US6246652B1 (en) * 1997-12-05 2001-06-12 Hitachi, Ltd. Device using sensor for small rotation angle
US6159742A (en) 1998-06-05 2000-12-12 President And Fellows Of Harvard College Nanometer-scale microscopy probes
US5930162A (en) 1998-09-30 1999-07-27 Motorola, Inc. Quantum random address memory with polymer mixer and/or memory
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
TW408417B (en) 1999-05-03 2000-10-11 Ind Tech Res Inst Planar-shape thin probe having electrostatic actuator manufactured by using sacrificed layer technology and its manufacturing method
US6062931A (en) 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
JP4467116B2 (ja) * 1999-12-20 2010-05-26 富士電機デバイステクノロジー株式会社 磁気記録媒体

Also Published As

Publication number Publication date
KR20030085060A (ko) 2003-11-01
JP4171304B2 (ja) 2008-10-22
EP1374246B1 (de) 2007-05-09
WO2002078005A3 (en) 2002-12-19
WO2002078005A2 (en) 2002-10-03
KR100867220B1 (ko) 2008-11-06
DE60220037T2 (de) 2008-02-14
JP2004532494A (ja) 2004-10-21
EP1374246A2 (de) 2004-01-02
US20020172072A1 (en) 2002-11-21
US6542400B2 (en) 2003-04-01

Similar Documents

Publication Publication Date Title
DE60220037D1 (de) Molekulares speichersystem und verfahren
DE60212580D1 (de) Ortungssystem und Verfahren
ATE289436T1 (de) Verfahren, informationsträger, und system
DE60026872D1 (de) Informationsübertragungssystem und verfahren
DE60139307D1 (de) Elektrisches rauchsystem und verfahren
DE60044651D1 (de) System und verfahren, um informationen zwischenzuspeichern
DE60123317D1 (de) Kodiersystem und Kodierverfahren
DE60214946D1 (de) Verfahren und System zur Bereitstellung von Informationen
DE10339784A8 (de) Mikroskopiesystem und Mikroskopieverfahren
DE60135637D1 (de) Datenverteilungssystem und verfahren
DE60207175D1 (de) System und Verfahren zur Authentifizierung
DE60226484D1 (de) System und verfahren zur zuverlässigkeitsbewertung
DE60031476D1 (de) Speichereinheiten, Datenverarbeitungseinheiten und zugehörige Verfahren
DE60119045D1 (de) Informationsverteilungssystem und Informationsverteilungsverfahren
DE60226403D1 (de) Informationverarbeitungssystem und -verfahren
DE60229413D1 (de) Antirefluxive drainagevorrichtung und verfahren
DE50214717D1 (de) Und verfahren zu seiner herstellung
DE60103218D1 (de) Zugagangspunkt und Verfahren zur Verbindungssteuerung
DE60045061D1 (de) Navigationsverfahren und -System
DE60105477D1 (de) Beschichtungs-Vorrichtung und Verfahren
DE60233681D1 (de) Bewässerungsmethode und -system
DE60226141D1 (de) Fifo-speicher system und verfahren dafür
DE60219261D1 (de) Lageranordnung und Verfahren
DE60200495D1 (de) Polyethylenglykol und Verfahren zu dessen Herstellung
DE60333155D1 (de) Simultandolmetschen- System und Verfahren

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, US

8364 No opposition during term of opposition