SG82677A1 - Resist stripping agent and process of producing semiconductor devices using the same - Google Patents

Resist stripping agent and process of producing semiconductor devices using the same

Info

Publication number
SG82677A1
SG82677A1 SG200000754A SG200000754A SG82677A1 SG 82677 A1 SG82677 A1 SG 82677A1 SG 200000754 A SG200000754 A SG 200000754A SG 200000754 A SG200000754 A SG 200000754A SG 82677 A1 SG82677 A1 SG 82677A1
Authority
SG
Singapore
Prior art keywords
same
semiconductor devices
resist stripping
stripping agent
producing semiconductor
Prior art date
Application number
SG200000754A
Other languages
English (en)
Inventor
Ikemoto Kazuto
Abe Hisake
Maruyama Taketo
Aoyama Tetsuo
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of SG82677A1 publication Critical patent/SG82677A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
SG200000754A 1999-02-25 2000-02-10 Resist stripping agent and process of producing semiconductor devices using the same SG82677A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04763599A JP4224651B2 (ja) 1999-02-25 1999-02-25 レジスト剥離剤およびそれを用いた半導体素子の製造方法

Publications (1)

Publication Number Publication Date
SG82677A1 true SG82677A1 (en) 2001-08-21

Family

ID=12780703

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000754A SG82677A1 (en) 1999-02-25 2000-02-10 Resist stripping agent and process of producing semiconductor devices using the same

Country Status (6)

Country Link
US (1) US6638694B2 (zh)
EP (1) EP1031884B1 (zh)
JP (1) JP4224651B2 (zh)
KR (1) KR100672102B1 (zh)
SG (1) SG82677A1 (zh)
TW (1) TWI261152B (zh)

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JP5251128B2 (ja) * 2005-12-01 2013-07-31 三菱瓦斯化学株式会社 半導体素子又は表示素子用洗浄液および洗浄方法
KR101152139B1 (ko) * 2005-12-06 2012-06-15 삼성전자주식회사 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법
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JP4858040B2 (ja) * 2006-09-25 2012-01-18 東ソー株式会社 レジスト除去用組成物及びレジストの除去方法
US8021490B2 (en) * 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
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KR101426088B1 (ko) * 2008-02-04 2014-08-04 동우 화인켐 주식회사 세정액 조성물 및 이를 이용한 세정 방법
KR101426089B1 (ko) * 2008-02-11 2014-08-04 동우 화인켐 주식회사 세정액 조성물 및 이를 이용한 세정 방법
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
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KR100950779B1 (ko) * 2009-08-25 2010-04-02 엘티씨 (주) Ｔｆｔ―ｌｃｄ 통합공정용 포토레지스트 박리제 조성물
US8518865B2 (en) 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
US8367555B2 (en) * 2009-12-11 2013-02-05 International Business Machines Corporation Removal of masking material
KR101829399B1 (ko) * 2010-03-04 2018-03-30 삼성전자주식회사 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
JP6215511B2 (ja) * 2010-07-16 2017-10-18 栗田工業株式会社 ボイラ用防食剤
JP5659729B2 (ja) * 2010-11-24 2015-01-28 三菱瓦斯化学株式会社 フォトレジスト剥離剤組成物
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물
KR101760849B1 (ko) 2011-03-04 2017-07-25 삼성디스플레이 주식회사 액정 표시 장치
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US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
TWI566058B (zh) * 2013-04-25 2017-01-11 奇美實業股份有限公司 剝離光阻用組成物及其使用方法
KR101420571B1 (ko) * 2013-07-05 2014-07-16 주식회사 동진쎄미켐 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
JP6464578B2 (ja) * 2013-08-01 2019-02-06 三菱瓦斯化学株式会社 プリント配線板の製造方法
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
WO2016028454A1 (en) 2014-08-18 2016-02-25 3M Innovative Properties Company Conductive layered structure and methods of making same
JPWO2017195453A1 (ja) * 2016-05-13 2019-04-04 株式会社Ｊｃｕ レジストの剥離液
KR102372922B1 (ko) * 2017-03-29 2022-03-11 동우 화인켐 주식회사 레지스트 박리액 조성물
US10948826B2 (en) 2018-03-07 2021-03-16 Versum Materials Us, Llc Photoresist stripper
US20220033343A1 (en) 2018-09-28 2022-02-03 Tokuyama Corporation Method for producing organic solvent solution of quaternary ammonium hydroxide
KR20220150134A (ko) * 2021-05-03 2022-11-10 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법

Citations (10)

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WO1987005314A1 (en) * 1986-02-28 1987-09-11 Macdermid, Incorporated Photoresist stripper composition and process of use
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
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JP2000039727A (ja) * 1998-07-10 2000-02-08 Samsung Electronics Co Ltd フォトレジスト用ストリッパ―組成物

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WO1987005314A1 (en) * 1986-02-28 1987-09-11 Macdermid, Incorporated Photoresist stripper composition and process of use
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US4770713A (en) * 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
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WO1995024257A1 (de) * 1994-03-08 1995-09-14 Atotech Deutschland Gmbh Verfahren und vorrichtung zum entschichten von leiterplatten
JPH08202051A (ja) * 1995-01-26 1996-08-09 Mitsubishi Gas Chem Co Inc フォトレジスト剥離剤組成物および剥離方法
WO1998040456A1 (en) * 1997-03-11 1998-09-17 The Procter & Gamble Company A process for making a selected crystalline calcium carbonate builder for use in detergent compositions
JP2000039727A (ja) * 1998-07-10 2000-02-08 Samsung Electronics Co Ltd フォトレジスト用ストリッパ―組成物

Also Published As

Publication number Publication date
JP4224651B2 (ja) 2009-02-18
EP1031884A3 (en) 2001-03-07
JP2000250230A (ja) 2000-09-14
EP1031884B1 (en) 2012-01-11
KR20000071361A (ko) 2000-11-25
US20030186175A1 (en) 2003-10-02
KR100672102B1 (ko) 2007-01-19
EP1031884A2 (en) 2000-08-30
US6638694B2 (en) 2003-10-28
TWI261152B (en) 2006-09-01

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