SG45405A1 - Gas feeding device and deposition film forming apparatus employing the same - Google Patents
Gas feeding device and deposition film forming apparatus employing the sameInfo
- Publication number
- SG45405A1 SG45405A1 SG1996006330A SG1996006330A SG45405A1 SG 45405 A1 SG45405 A1 SG 45405A1 SG 1996006330 A SG1996006330 A SG 1996006330A SG 1996006330 A SG1996006330 A SG 1996006330A SG 45405 A1 SG45405 A1 SG 45405A1
- Authority
- SG
- Singapore
- Prior art keywords
- gas
- feeding device
- forming apparatus
- same
- film forming
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Auxiliary Devices For And Details Of Packaging Control (AREA)
- Air Bags (AREA)
- Manufacturing And Processing Devices For Dough (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1250025A JPH03112892A (ja) | 1989-09-26 | 1989-09-26 | ガス供給装置 |
JP1250027A JP2776913B2 (ja) | 1989-09-26 | 1989-09-26 | ガス供給装置 |
JP1250026A JP2773918B2 (ja) | 1989-09-26 | 1989-09-26 | ガス供給装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG45405A1 true SG45405A1 (en) | 1998-01-16 |
Family
ID=27333893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996006330A SG45405A1 (en) | 1989-09-26 | 1990-09-25 | Gas feeding device and deposition film forming apparatus employing the same |
Country Status (8)
Country | Link |
---|---|
US (3) | US5476547A (de) |
EP (1) | EP0420596B1 (de) |
KR (1) | KR940005276B1 (de) |
AT (1) | ATE139580T1 (de) |
DE (1) | DE69027496T2 (de) |
MY (1) | MY107421A (de) |
PT (1) | PT95432B (de) |
SG (1) | SG45405A1 (de) |
Families Citing this family (62)
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US5456945A (en) * | 1988-12-27 | 1995-10-10 | Symetrix Corporation | Method and apparatus for material deposition |
SG45405A1 (en) * | 1989-09-26 | 1998-01-16 | Canon Kk | Gas feeding device and deposition film forming apparatus employing the same |
JP3222518B2 (ja) * | 1991-12-26 | 2001-10-29 | キヤノン株式会社 | 液体原料気化装置および薄膜形成装置 |
DE69218152T2 (de) * | 1991-12-26 | 1997-08-28 | Canon K.K., Tokio/Tokyo | Herstellungsverfahren einer niedergeschlagenen Schicht mittels CVD, unter Verwendung von flüssigem Rohstoff und dazu geeignete Vorrichtung |
FR2695944B1 (fr) * | 1992-09-24 | 1994-11-18 | Onera (Off Nat Aerospatiale) | Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes. |
JPH06196419A (ja) * | 1992-12-24 | 1994-07-15 | Canon Inc | 化学気相堆積装置及びそれによる半導体装置の製造方法 |
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US5878355A (en) * | 1995-09-01 | 1999-03-02 | Encapsulation Technology, Llc | Method and apparatus for encapsulating particulates |
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US6074487A (en) * | 1997-02-13 | 2000-06-13 | Shimadzu Corporation | Unit for vaporizing liquid materials |
US5820678A (en) * | 1997-05-30 | 1998-10-13 | The Regents Of The University Of California | Solid source MOCVD system |
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JP4954448B2 (ja) | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
JP4714422B2 (ja) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
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EP1747302B1 (de) * | 2004-05-20 | 2012-12-26 | Akzo Nobel N.V. | Bubbler zur konstanten dampfzufuhr einer festen chemikalie |
JP4845385B2 (ja) * | 2004-08-13 | 2011-12-28 | 東京エレクトロン株式会社 | 成膜装置 |
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JP5104151B2 (ja) * | 2007-09-18 | 2012-12-19 | 東京エレクトロン株式会社 | 気化装置、成膜装置、成膜方法及び記憶媒体 |
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JP5690498B2 (ja) | 2009-03-27 | 2015-03-25 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 基体上に膜を堆積する方法および気化前駆体化合物を送達する装置 |
EP2339048B1 (de) | 2009-09-14 | 2016-12-07 | Rohm and Haas Electronic Materials, L.L.C. | Verfahren zum Abscheiden von organometallischen Verbindungen |
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GB8802942D0 (en) * | 1988-02-09 | 1988-03-09 | Aron Vecht & Co Ltd | Methods & apparatus for depositing thin films |
JPH01252776A (ja) * | 1988-03-31 | 1989-10-09 | Sony Corp | 気相成長アルミニウム膜形成方法 |
DE3827628A1 (de) * | 1988-08-16 | 1990-03-15 | Hoechst Ag | Verfahren und vorrichtung zur oberflaechenvorbehandlung eines formkoerpers aus kunststoff mittels einer elektrischen koronaentladung |
US4911101A (en) * | 1988-07-20 | 1990-03-27 | General Electric Company | Metal organic molecular beam epitaxy (MOMBE) apparatus |
DE3827629A1 (de) * | 1988-08-16 | 1990-03-15 | Hoechst Ag | Verfahren und vorrichtung zur oberflaechenvorbehandlung von ein- oder mehrschichtigem formmaterial mittels einer elektrischen koronaentladung |
JP2570839B2 (ja) * | 1988-12-22 | 1997-01-16 | 日本電気株式会社 | A▲l▼ーCu合金薄膜形成方法 |
JPH02185026A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | Al薄膜の選択的形成方法 |
US4904419A (en) * | 1989-03-14 | 1990-02-27 | Reynolds Warren D | Process and apparatus for vapor transfer of very high purity liquids at high dilution |
SG45405A1 (en) * | 1989-09-26 | 1998-01-16 | Canon Kk | Gas feeding device and deposition film forming apparatus employing the same |
JPH03122117A (ja) * | 1989-10-05 | 1991-05-24 | Mitsubishi Rayon Co Ltd | 防振材用樹脂 |
JPH0439922A (ja) * | 1990-06-05 | 1992-02-10 | Fujitsu Ltd | 気相成長用蒸発器 |
-
1990
- 1990-09-25 SG SG1996006330A patent/SG45405A1/en unknown
- 1990-09-25 EP EP90310507A patent/EP0420596B1/de not_active Expired - Lifetime
- 1990-09-25 AT AT90310507T patent/ATE139580T1/de not_active IP Right Cessation
- 1990-09-25 DE DE69027496T patent/DE69027496T2/de not_active Expired - Fee Related
- 1990-09-26 MY MYPI90001661A patent/MY107421A/en unknown
- 1990-09-26 KR KR1019900015298A patent/KR940005276B1/ko not_active IP Right Cessation
- 1990-09-26 PT PT95432A patent/PT95432B/pt not_active IP Right Cessation
-
1994
- 1994-04-21 US US08/232,431 patent/US5476547A/en not_active Expired - Lifetime
-
1995
- 1995-05-11 US US08/439,516 patent/US5779804A/en not_active Expired - Lifetime
- 1995-05-11 US US08/439,459 patent/US5755885A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69027496T2 (de) | 1996-10-31 |
KR910007072A (ko) | 1991-04-30 |
DE69027496D1 (de) | 1996-07-25 |
US5755885A (en) | 1998-05-26 |
US5779804A (en) | 1998-07-14 |
ATE139580T1 (de) | 1996-07-15 |
PT95432B (pt) | 1998-06-30 |
KR940005276B1 (ko) | 1994-06-15 |
PT95432A (pt) | 1994-01-31 |
EP0420596B1 (de) | 1996-06-19 |
US5476547A (en) | 1995-12-19 |
EP0420596A1 (de) | 1991-04-03 |
MY107421A (en) | 1995-12-30 |
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