GB8802942D0 - Methods & apparatus for depositing thin films - Google Patents

Methods & apparatus for depositing thin films

Info

Publication number
GB8802942D0
GB8802942D0 GB888802942A GB8802942A GB8802942D0 GB 8802942 D0 GB8802942 D0 GB 8802942D0 GB 888802942 A GB888802942 A GB 888802942A GB 8802942 A GB8802942 A GB 8802942A GB 8802942 D0 GB8802942 D0 GB 8802942D0
Authority
GB
United Kingdom
Prior art keywords
methods
thin films
depositing thin
depositing
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB888802942A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aron Vecht & Co Ltd
Original Assignee
Aron Vecht & Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aron Vecht & Co Ltd filed Critical Aron Vecht & Co Ltd
Priority to GB888802942A priority Critical patent/GB8802942D0/en
Publication of GB8802942D0 publication Critical patent/GB8802942D0/en
Priority to PCT/GB1989/000114 priority patent/WO1989007667A1/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0436—Processes for depositing or forming superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
GB888802942A 1988-02-09 1988-02-09 Methods & apparatus for depositing thin films Pending GB8802942D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB888802942A GB8802942D0 (en) 1988-02-09 1988-02-09 Methods & apparatus for depositing thin films
PCT/GB1989/000114 WO1989007667A1 (en) 1988-02-09 1989-02-07 Methods and apparatus for depositing thin films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB888802942A GB8802942D0 (en) 1988-02-09 1988-02-09 Methods & apparatus for depositing thin films

Publications (1)

Publication Number Publication Date
GB8802942D0 true GB8802942D0 (en) 1988-03-09

Family

ID=10631371

Family Applications (1)

Application Number Title Priority Date Filing Date
GB888802942A Pending GB8802942D0 (en) 1988-02-09 1988-02-09 Methods & apparatus for depositing thin films

Country Status (2)

Country Link
GB (1) GB8802942D0 (en)
WO (1) WO1989007667A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
DE69027496T2 (en) * 1989-09-26 1996-10-31 Canon Kk Gas supply device and its use for a film deposition system
US5108983A (en) * 1989-11-21 1992-04-28 Georgia Tech Research Corporation Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition
US5278138A (en) * 1990-04-16 1994-01-11 Ott Kevin C Aerosol chemical vapor deposition of metal oxide films
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6116184A (en) * 1996-05-21 2000-09-12 Symetrix Corporation Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size
US5997642A (en) * 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
JP3681870B2 (en) * 1997-09-05 2005-08-10 松下電池工業株式会社 Method for producing compound semiconductor film and solar cell
US6180420B1 (en) * 1997-12-10 2001-01-30 Advanced Technology Materials, Inc. Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
JP2000127186A (en) 1998-10-28 2000-05-09 Matsushita Electric Ind Co Ltd Manufacture of resin thin film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1496590C3 (en) * 1964-10-16 1973-10-31 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Process for the production of warm reflective SnO deep 2 layers with reproducible optical and electrical properties on carriers
US3894164A (en) * 1973-03-15 1975-07-08 Rca Corp Chemical vapor deposition of luminescent films
IL64258A0 (en) * 1980-12-15 1982-02-28 Hughes Aircraft Co Method and apparatus for photochemical vapor deposition

Also Published As

Publication number Publication date
WO1989007667A1 (en) 1989-08-24

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