SG172643A1 - Etched nanofin transistors - Google Patents
Etched nanofin transistors Download PDFInfo
- Publication number
- SG172643A1 SG172643A1 SG2011038726A SG2011038726A SG172643A1 SG 172643 A1 SG172643 A1 SG 172643A1 SG 2011038726 A SG2011038726 A SG 2011038726A SG 2011038726 A SG2011038726 A SG 2011038726A SG 172643 A1 SG172643 A1 SG 172643A1
- Authority
- SG
- Singapore
- Prior art keywords
- fin
- forming
- gate
- surrounding gate
- substrate
- Prior art date
Links
- SDGKUVSVPIIUCF-UHFFFAOYSA-N 2,6-dimethylpiperidine Chemical compound CC1CCCC(C)N1 SDGKUVSVPIIUCF-UHFFFAOYSA-N 0.000 title abstract description 28
- 229950005630 nanofin Drugs 0.000 title abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000012212 insulator Substances 0.000 claims abstract description 34
- 125000006850 spacer group Chemical group 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims 15
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 8
- 238000000059 patterning Methods 0.000 claims 2
- 230000015654 memory Effects 0.000 description 29
- 108091006146 Channels Proteins 0.000 description 19
- 230000008569 process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/231—Tunnel BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/397,527 US7425491B2 (en) | 2006-04-04 | 2006-04-04 | Nanowire transistor with surrounding gate |
| US11/397,430 US8734583B2 (en) | 2006-04-04 | 2006-04-04 | Grown nanofin transistors |
| US11/397,406 US20070228491A1 (en) | 2006-04-04 | 2006-04-04 | Tunneling transistor with sublithographic channel |
| US11/397,413 US7491995B2 (en) | 2006-04-04 | 2006-04-04 | DRAM with nanofin transistors |
| US11/397,358 US8354311B2 (en) | 2006-04-04 | 2006-04-04 | Method for forming nanofin transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG172643A1 true SG172643A1 (en) | 2011-07-28 |
Family
ID=38325217
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011038726A SG172643A1 (en) | 2006-04-04 | 2007-04-03 | Etched nanofin transistors |
| SG201102381-9A SG170827A1 (en) | 2006-04-04 | 2007-04-03 | Grown nanofin transistors |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG201102381-9A SG170827A1 (en) | 2006-04-04 | 2007-04-03 | Grown nanofin transistors |
Country Status (5)
| Country | Link |
|---|---|
| EP (4) | EP2008309A1 (enExample) |
| JP (4) | JP5229635B2 (enExample) |
| KR (5) | KR20140051463A (enExample) |
| SG (2) | SG172643A1 (enExample) |
| WO (4) | WO2007120493A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100790863B1 (ko) * | 2005-12-28 | 2008-01-03 | 삼성전자주식회사 | 나노 와이어 제조 방법 |
| US7491995B2 (en) | 2006-04-04 | 2009-02-17 | Micron Technology, Inc. | DRAM with nanofin transistors |
| US8734583B2 (en) | 2006-04-04 | 2014-05-27 | Micron Technology, Inc. | Grown nanofin transistors |
| US7425491B2 (en) | 2006-04-04 | 2008-09-16 | Micron Technology, Inc. | Nanowire transistor with surrounding gate |
| US8354311B2 (en) | 2006-04-04 | 2013-01-15 | Micron Technology, Inc. | Method for forming nanofin transistors |
| US8643087B2 (en) * | 2006-09-20 | 2014-02-04 | Micron Technology, Inc. | Reduced leakage memory cells |
| KR100945511B1 (ko) * | 2008-04-10 | 2010-03-09 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
| US7897494B2 (en) * | 2008-06-24 | 2011-03-01 | Imec | Formation of single crystal semiconductor nanowires |
| DE102009024311A1 (de) * | 2009-06-05 | 2011-01-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
| KR101857582B1 (ko) | 2011-12-20 | 2018-05-14 | 인텔 코포레이션 | 반도체 구조물 및 제조 방법 |
| KR20130131708A (ko) | 2012-05-24 | 2013-12-04 | 에스케이하이닉스 주식회사 | 메모리 셀 어레이 및 이를 포함하는 가변 저항 메모리 장치 |
| US9006810B2 (en) * | 2012-06-07 | 2015-04-14 | International Business Machines Corporation | DRAM with a nanowire access transistor |
| EP2674978B1 (en) * | 2012-06-15 | 2020-07-29 | IMEC vzw | Tunnel field effect transistor device and method for making the device |
| WO2014024266A1 (ja) * | 2012-08-08 | 2014-02-13 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置の製造方法、及び、半導体装置 |
| KR20140040543A (ko) * | 2012-09-26 | 2014-04-03 | 삼성전자주식회사 | 핀 구조의 전계효과 트랜지스터, 이를 포함하는 메모리 장치 및 그 반도체 장치 |
| KR20140078326A (ko) * | 2012-12-17 | 2014-06-25 | 경북대학교 산학협력단 | 터널링 전계효과 트랜지스터 및 터널링 전계효과 트랜지스터의 제조 방법 |
| JP5886802B2 (ja) * | 2013-08-29 | 2016-03-16 | 株式会社東芝 | 半導体装置 |
| US9425296B2 (en) * | 2013-09-09 | 2016-08-23 | Qualcomm Incorporated | Vertical tunnel field effect transistor |
| US10727339B2 (en) | 2014-03-28 | 2020-07-28 | Intel Corporation | Selectively regrown top contact for vertical semiconductor devices |
| US9941394B2 (en) | 2014-04-30 | 2018-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tunnel field-effect transistor |
| US9673209B2 (en) | 2014-05-16 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method for fabricating the same |
| US10361090B2 (en) | 2014-06-13 | 2019-07-23 | Intel Corporation | Vertical channel transistors fabrication process by selective subtraction of a regular grid |
| US10559690B2 (en) | 2014-09-18 | 2020-02-11 | International Business Machines Corporation | Embedded source/drain structure for tall FinFET and method of formation |
| US9818877B2 (en) | 2014-09-18 | 2017-11-14 | International Business Machines Corporation | Embedded source/drain structure for tall finFET and method of formation |
| US9634084B1 (en) | 2016-02-10 | 2017-04-25 | Globalfoundries Inc. | Conformal buffer layer in source and drain regions of fin-type transistors |
| US10186510B2 (en) * | 2017-05-01 | 2019-01-22 | Advanced Micro Devices, Inc. | Vertical gate all around library architecture |
| US10374041B2 (en) | 2017-12-21 | 2019-08-06 | International Business Machines Corporation | Field effect transistor with controllable resistance |
| KR102593708B1 (ko) * | 2018-08-14 | 2023-10-26 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
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| US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
| JPH07112067B2 (ja) * | 1990-01-24 | 1995-11-29 | 株式会社東芝 | 半導体装置 |
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| JP3202223B2 (ja) | 1990-11-27 | 2001-08-27 | 日本電気株式会社 | トランジスタの製造方法 |
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| JPH05160408A (ja) * | 1991-12-04 | 1993-06-25 | Toshiba Corp | 電界効果トランジスタおよびこれを用いたダイナミック型半導体記憶装置 |
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| JP4108537B2 (ja) * | 2003-05-28 | 2008-06-25 | 富士雄 舛岡 | 半導体装置 |
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-
2007
- 2007-04-03 JP JP2009504238A patent/JP5229635B2/ja active Active
- 2007-04-03 KR KR1020147009477A patent/KR20140051463A/ko not_active Ceased
- 2007-04-03 SG SG2011038726A patent/SG172643A1/en unknown
- 2007-04-03 EP EP07754850A patent/EP2008309A1/en not_active Ceased
- 2007-04-03 WO PCT/US2007/008124 patent/WO2007120493A1/en not_active Ceased
- 2007-04-03 EP EP07754621.6A patent/EP2002468B1/en not_active Not-in-force
- 2007-04-03 WO PCT/US2007/008123 patent/WO2007120492A1/en not_active Ceased
- 2007-04-03 JP JP2009504232A patent/JP5229587B2/ja active Active
- 2007-04-03 EP EP07754622A patent/EP2002469A1/en not_active Withdrawn
- 2007-04-03 JP JP2009504280A patent/JP5234439B2/ja active Active
- 2007-04-03 KR KR1020087026970A patent/KR20090007393A/ko not_active Withdrawn
- 2007-04-03 KR KR1020087027075A patent/KR20090006169A/ko not_active Ceased
- 2007-04-03 WO PCT/US2007/008400 patent/WO2007114927A1/en not_active Ceased
- 2007-04-03 JP JP2009504239A patent/JP2009532905A/ja not_active Withdrawn
- 2007-04-03 SG SG201102381-9A patent/SG170827A1/en unknown
- 2007-04-03 WO PCT/US2007/008084 patent/WO2007136461A2/en not_active Ceased
- 2007-04-03 EP EP07809002.4A patent/EP2002470B1/en active Active
-
2008
- 2008-11-03 KR KR1020087026973A patent/KR101474028B1/ko active Active
- 2008-11-04 KR KR1020087027077A patent/KR101378256B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007120492A1 (en) | 2007-10-25 |
| EP2002470A2 (en) | 2008-12-17 |
| KR20140051463A (ko) | 2014-04-30 |
| JP5234439B2 (ja) | 2013-07-10 |
| KR20090007393A (ko) | 2009-01-16 |
| WO2007136461A2 (en) | 2007-11-29 |
| SG170827A1 (en) | 2011-05-30 |
| WO2007114927A1 (en) | 2007-10-11 |
| EP2002469A1 (en) | 2008-12-17 |
| EP2002470B1 (en) | 2016-03-09 |
| EP2002468B1 (en) | 2013-07-24 |
| JP2009532904A (ja) | 2009-09-10 |
| EP2008309A1 (en) | 2008-12-31 |
| WO2007136461A3 (en) | 2008-01-17 |
| JP2009532905A (ja) | 2009-09-10 |
| KR101474028B1 (ko) | 2014-12-17 |
| JP5229635B2 (ja) | 2013-07-03 |
| JP2009532903A (ja) | 2009-09-10 |
| KR20090007397A (ko) | 2009-01-16 |
| JP2009532907A (ja) | 2009-09-10 |
| KR20090006169A (ko) | 2009-01-14 |
| EP2002468A1 (en) | 2008-12-17 |
| KR101378256B1 (ko) | 2014-03-25 |
| KR20090005149A (ko) | 2009-01-12 |
| JP5229587B2 (ja) | 2013-07-03 |
| WO2007120493A1 (en) | 2007-10-25 |
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