SG172276A1 - Slurry composition containing non-ionic polymer and method for use - Google Patents

Slurry composition containing non-ionic polymer and method for use Download PDF

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Publication number
SG172276A1
SG172276A1 SG2011045077A SG2011045077A SG172276A1 SG 172276 A1 SG172276 A1 SG 172276A1 SG 2011045077 A SG2011045077 A SG 2011045077A SG 2011045077 A SG2011045077 A SG 2011045077A SG 172276 A1 SG172276 A1 SG 172276A1
Authority
SG
Singapore
Prior art keywords
composition
viscosity modifier
viscosity
kda
aqueous carrier
Prior art date
Application number
SG2011045077A
Other languages
English (en)
Inventor
Steven Grumbine
Chul-Woo Nam
William Ward
Ramasubramanyam Nagarajan
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG172276A1 publication Critical patent/SG172276A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007Use, recovery or regeneration of abrasive mediums
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/02Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
    • B28D1/08Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with saw-blades of endless cutter-type, e.g. chain saws, i.e. saw chains, strap saws
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10MLUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M125/00Lubricating compositions characterised by the additive being an inorganic material
    • C10M125/08Metal carbides or hydrides
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10MLUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M173/00Lubricating compositions containing more than 10% water
    • C10M173/02Lubricating compositions containing more than 10% water not containing mineral or fatty oils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10MLUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2201/00Inorganic compounds or elements as ingredients in lubricant compositions
    • C10M2201/06Metal compounds
    • C10M2201/061Carbides; Hydrides; Nitrides
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10MLUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2201/00Inorganic compounds or elements as ingredients in lubricant compositions
    • C10M2201/10Compounds containing silicon
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10MLUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2209/00Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
    • C10M2209/02Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C10M2209/04Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds containing monomers having an unsaturated radical bound to an alcohol or ester thereof; bound to an aldehyde, ketonic, ether, ketal or acetal radical
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10MLUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2209/00Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
    • C10M2209/12Polysaccharides, e.g. cellulose, biopolymers
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10MLUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2217/00Organic macromolecular compounds containing nitrogen as ingredients in lubricant compositions
    • C10M2217/02Macromolecular compounds obtained from nitrogen containing monomers by reactions only involving carbon-to-carbon unsaturated bonds
    • C10M2217/028Macromolecular compounds obtained from nitrogen containing monomers by reactions only involving carbon-to-carbon unsaturated bonds containing monomers having an unsaturated radical bound to a nitrogen-containing hetero ring
    • CCHEMISTRY; METALLURGY
    • C10PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10NINDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
    • C10N2040/00Specified use or application for which the lubricating composition is intended
    • C10N2040/20Metal working
    • C10N2040/22Metal working with essential removal of material, e.g. cutting, grinding or drilling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mining & Mineral Resources (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Lubricants (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
SG2011045077A 2008-12-19 2009-12-17 Slurry composition containing non-ionic polymer and method for use SG172276A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/317,254 US8157876B2 (en) 2007-07-31 2008-12-19 Slurry composition containing non-ionic polymer and method for use
PCT/US2009/068466 WO2010080495A1 (en) 2008-12-19 2009-12-17 Slurry composition containing non-ionic polymer and method for use

Publications (1)

Publication Number Publication Date
SG172276A1 true SG172276A1 (en) 2011-07-28

Family

ID=42316721

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011045077A SG172276A1 (en) 2008-12-19 2009-12-17 Slurry composition containing non-ionic polymer and method for use

Country Status (10)

Country Link
US (1) US8157876B2 (zh)
EP (1) EP2376587A4 (zh)
JP (1) JP6001858B2 (zh)
KR (1) KR20110099744A (zh)
CN (1) CN102257092B (zh)
IL (1) IL213230A (zh)
MY (1) MY150761A (zh)
SG (1) SG172276A1 (zh)
TW (1) TWI413681B (zh)
WO (1) WO2010080495A1 (zh)

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WO2011044718A1 (en) * 2009-10-16 2011-04-21 Dow Global Technologies Llc Aqueous cutting fluid for use with diamond wiresaw
JP5420498B2 (ja) * 2010-08-03 2014-02-19 ユシロ化学工業株式会社 固定砥粒ワイヤソー用水溶性加工液
CN102229212A (zh) * 2010-08-23 2011-11-02 蒙特集团(香港)有限公司 用于太阳能硅片线切割的湿碳化硅砂料
CN102242010A (zh) * 2010-09-16 2011-11-16 蒙特集团(香港)有限公司 一种用非标碳化硅砂料配制的太阳能硅片切割砂浆
CN102230282B (zh) * 2010-12-29 2013-10-09 蒙特集团(香港)有限公司 太阳能硅片线切割耐磨钢线的制作方法
JP2014000735A (ja) * 2012-06-19 2014-01-09 Ohbayashi Corp 構造物の解体方法
JP6039935B2 (ja) * 2012-06-29 2016-12-07 出光興産株式会社 水性加工液
KR102155205B1 (ko) * 2012-08-31 2020-09-11 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 기판의 제조 방법
CN105189676B (zh) 2013-05-15 2021-03-23 巴斯夫欧洲公司 包含一种或多种选自n-乙烯基均聚物和n-乙烯基共聚物的聚合物的化学机械抛光组合物
CN104293205A (zh) * 2013-07-16 2015-01-21 鸿富锦精密工业(深圳)有限公司 水性金刚石抛光液及其制备方法
JP2015203080A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
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CN107201266B (zh) * 2017-06-14 2020-11-24 合肥工业大学 生物可降解环保型线切割乳化液及其制备方法
TWI632041B (zh) * 2017-09-11 2018-08-11 環球晶圓股份有限公司 晶棒切割方法及切削磨料套組
CN108084887A (zh) * 2017-12-21 2018-05-29 惠州市米特仑科技有限公司 一种氧化硅抛光液的制备方法
JP6819619B2 (ja) * 2018-01-22 2021-01-27 信越半導体株式会社 ワーク切断方法及びワイヤソー
US10954411B2 (en) 2019-05-16 2021-03-23 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide
US10787592B1 (en) 2019-05-16 2020-09-29 Rohm And Haas Electronic Materials Cmp Holdings, I Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment

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Also Published As

Publication number Publication date
US8157876B2 (en) 2012-04-17
TWI413681B (zh) 2013-11-01
JP6001858B2 (ja) 2016-10-05
JP2012512951A (ja) 2012-06-07
KR20110099744A (ko) 2011-09-08
CN102257092A (zh) 2011-11-23
MY150761A (en) 2014-02-28
EP2376587A4 (en) 2014-10-29
CN102257092B (zh) 2013-12-18
TW201033341A (en) 2010-09-16
WO2010080495A1 (en) 2010-07-15
EP2376587A1 (en) 2011-10-19
US20090126713A1 (en) 2009-05-21
IL213230A0 (en) 2011-07-31
IL213230A (en) 2015-02-26

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