SG134245A1 - Ph buffered aqueous cleaning composition and method for removing photoresist residue - Google Patents
Ph buffered aqueous cleaning composition and method for removing photoresist residueInfo
- Publication number
- SG134245A1 SG134245A1 SG200700158-9A SG2007001589A SG134245A1 SG 134245 A1 SG134245 A1 SG 134245A1 SG 2007001589 A SG2007001589 A SG 2007001589A SG 134245 A1 SG134245 A1 SG 134245A1
- Authority
- SG
- Singapore
- Prior art keywords
- cleaning composition
- substrate
- residue
- aqueous cleaning
- buffered aqueous
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 3
- 238000004140 cleaning Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002253 acid Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 125000005210 alkyl ammonium group Chemical group 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000006174 pH buffer Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/330,815 US7534753B2 (en) | 2006-01-12 | 2006-01-12 | pH buffered aqueous cleaning composition and method for removing photoresist residue |
Publications (1)
Publication Number | Publication Date |
---|---|
SG134245A1 true SG134245A1 (en) | 2007-08-29 |
Family
ID=37983393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200700158-9A SG134245A1 (en) | 2006-01-12 | 2007-01-09 | Ph buffered aqueous cleaning composition and method for removing photoresist residue |
Country Status (9)
Country | Link |
---|---|
US (1) | US7534753B2 (zh) |
EP (1) | EP1808480B1 (zh) |
JP (1) | JP4473277B2 (zh) |
KR (1) | KR20070075303A (zh) |
CN (1) | CN101000469A (zh) |
AT (1) | ATE445003T1 (zh) |
DE (1) | DE602007002643D1 (zh) |
SG (1) | SG134245A1 (zh) |
TW (1) | TWI336729B (zh) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4988165B2 (ja) * | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
KR100655647B1 (ko) * | 2005-07-04 | 2006-12-08 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법 |
US20080076076A1 (en) * | 2006-09-22 | 2008-03-27 | Texas Instruments Incorporated | Rework methodology that preserves gate performance |
US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
TWI446400B (zh) | 2007-10-05 | 2014-07-21 | Schott Ag | Fluorescent lamp with lamp cleaning method |
US8357646B2 (en) | 2008-03-07 | 2013-01-22 | Air Products And Chemicals, Inc. | Stripper for dry film removal |
US8580656B2 (en) * | 2008-07-14 | 2013-11-12 | Air Products And Chemicals, Inc. | Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor |
WO2010042457A1 (en) * | 2008-10-09 | 2010-04-15 | Mallinckrodt Baker, Inc. | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition |
WO2010073887A1 (ja) * | 2008-12-25 | 2010-07-01 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物、積層金属配線基板のフォトレジスト剥離方法及び製造方法 |
US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
CN102124414B (zh) * | 2009-04-17 | 2014-04-02 | 长瀬化成株式会社 | 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 |
KR20110007828A (ko) * | 2009-07-17 | 2011-01-25 | 동우 화인켐 주식회사 | 구리 또는 구리합금 배선용 박리액 조성물 |
JP5646882B2 (ja) * | 2009-09-30 | 2014-12-24 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び半導体装置の製造方法 |
TWI470119B (zh) * | 2009-11-13 | 2015-01-21 | Avantor Performance Mat Inc | 用於氧化銅蝕刻殘留物之移除及避免銅電鍍之水相酸性調配物 |
US8101561B2 (en) | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
JP5926723B2 (ja) * | 2010-03-26 | 2016-05-25 | ウオーターズ・テクノロジーズ・コーポレイシヨン | 拡散結合され表面改質された構成要素を有するクロマトグラフィ装置 |
US8536106B2 (en) * | 2010-04-14 | 2013-09-17 | Ecolab Usa Inc. | Ferric hydroxycarboxylate as a builder |
US8883701B2 (en) | 2010-07-09 | 2014-11-11 | Air Products And Chemicals, Inc. | Method for wafer dicing and composition useful thereof |
US8927476B2 (en) * | 2010-07-19 | 2015-01-06 | Basf Se | Aqueous alkaline cleaning compositions and methods of their use |
ES2541222T3 (es) * | 2011-08-09 | 2015-07-16 | Basf Se | Composiciones alcalinas acuosas y procedimiento de tratamiento de la superficie de sustratos de silicio |
DE102011088885A1 (de) * | 2011-12-16 | 2013-06-20 | Wacker Chemie Ag | Siliconlöser |
US20130302985A1 (en) * | 2012-05-10 | 2013-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") | Method of removing residue during semiconductor device fabrication |
CN102880017B (zh) * | 2012-09-28 | 2014-07-23 | 京东方科技集团股份有限公司 | 光刻胶用剥离液组合物及其制备和应用 |
US9536730B2 (en) * | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
WO2014168166A1 (ja) * | 2013-04-10 | 2014-10-16 | 和光純薬工業株式会社 | 金属配線用基板洗浄剤および半導体基板の洗浄方法 |
CN103513522B (zh) * | 2013-09-25 | 2018-06-01 | 青岛果子科技服务平台有限公司 | 半导体清洗组合物 |
TWI659098B (zh) * | 2014-01-29 | 2019-05-11 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後配方及其使用方法 |
KR102427699B1 (ko) | 2015-04-27 | 2022-08-01 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
JP6477407B2 (ja) * | 2015-10-15 | 2019-03-06 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
KR102113189B1 (ko) * | 2016-08-23 | 2020-06-03 | 오씨아이 주식회사 | 식각 후 식각 용액의 후처리 방법 |
JP7244519B2 (ja) * | 2017-12-08 | 2023-03-22 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン | フォトレジスト剥離組成物 |
US11479744B2 (en) | 2018-03-02 | 2022-10-25 | Mitsubishi Gas Chemical Company, Inc. | Composition having suppressed alumina damage and production method for semiconductor substrate using same |
WO2020009793A1 (en) * | 2018-07-06 | 2020-01-09 | Entegris, Inc. | Improvements to selectively etching materials |
JP2020170841A (ja) * | 2019-04-03 | 2020-10-15 | 悦盟先進化學股▲分▼有限公司 | エッチング残渣の除去のためのクリーニング組成物 |
KR20220058069A (ko) * | 2020-10-30 | 2022-05-09 | 주식회사 이엔에프테크놀로지 | 세정제 조성물 및 이를 이용한 세정방법 |
KR20220061628A (ko) | 2020-11-06 | 2022-05-13 | 주식회사 케이씨텍 | 연마 입자 용해용 조성물 및 이를 이용한 세정 방법 |
KR102668584B1 (ko) * | 2021-09-30 | 2024-05-24 | 주식회사 케이씨텍 | Cmp 후 세정액 조성물 |
CN114318353B (zh) * | 2021-12-27 | 2023-12-05 | 广东红日星实业有限公司 | 一种除灰剂及其制备方法和应用 |
US20230323248A1 (en) * | 2022-03-23 | 2023-10-12 | Entegris, Inc. | Post cmp cleaning composition |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1690404A (en) | 1926-03-01 | 1928-11-06 | Frank C Dieckmann | Combined dresser, wardrobe, bookcase, and rack |
US3951827A (en) | 1973-12-03 | 1976-04-20 | Borg-Warner Corporation | Composition and method for removing insoluble scale deposits from surfaces |
JPH0750086B2 (ja) * | 1989-09-13 | 1995-05-31 | ダイソー株式会社 | クロマトグラフ充填剤及びこれによる水溶性有機化合物の分離法 |
JP3274232B2 (ja) * | 1993-06-01 | 2002-04-15 | ディップソール株式会社 | 錫−ビスマス合金めっき浴及びそれを使用するめっき方法 |
JP3481020B2 (ja) * | 1995-09-07 | 2003-12-22 | ディップソール株式会社 | Sn−Bi系合金めっき浴 |
JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
JPH1055993A (ja) * | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6224785B1 (en) * | 1997-08-29 | 2001-05-01 | Advanced Technology Materials, Inc. | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
EP0872870A3 (en) * | 1997-04-14 | 1999-05-06 | Hitachi Chemical Co., Ltd. | Fluorescent pattern, process for preparing the same, organic alkali developing solution for forming the same, emulsion developing solution for forming the same and back plate for plasma display using the same |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
JPH1167632A (ja) * | 1997-08-18 | 1999-03-09 | Mitsubishi Gas Chem Co Inc | 半導体装置用洗浄剤 |
US6033993A (en) * | 1997-09-23 | 2000-03-07 | Olin Microelectronic Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
US6280651B1 (en) * | 1998-12-16 | 2001-08-28 | Advanced Technology Materials, Inc. | Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent |
JP3606738B2 (ja) * | 1998-06-05 | 2005-01-05 | 東京応化工業株式会社 | アッシング後の処理液およびこれを用いた処理方法 |
SG77710A1 (en) * | 1998-09-09 | 2001-01-16 | Tokuyama Corp | Photoresist ashing residue cleaning agent |
US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
JP2000247903A (ja) * | 1999-03-01 | 2000-09-12 | Chugai Pharmaceut Co Ltd | 長期安定化製剤 |
US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
US6235693B1 (en) * | 1999-07-16 | 2001-05-22 | Ekc Technology, Inc. | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices |
JP3410403B2 (ja) * | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
JP2001100436A (ja) * | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
US6361712B1 (en) * | 1999-10-15 | 2002-03-26 | Arch Specialty Chemicals, Inc. | Composition for selective etching of oxides over metals |
EP1138726B1 (en) * | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
JP4959095B2 (ja) * | 2000-07-10 | 2012-06-20 | イーケイシー テクノロジー インコーポレーテッド | 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物 |
US6656894B2 (en) * | 2000-12-07 | 2003-12-02 | Ashland Inc. | Method for cleaning etcher parts |
US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
JP4945857B2 (ja) * | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
US7393819B2 (en) * | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
US6849200B2 (en) * | 2002-07-23 | 2005-02-01 | Advanced Technology Materials, Inc. | Composition and process for wet stripping removal of sacrificial anti-reflective material |
JP2004099488A (ja) * | 2002-09-06 | 2004-04-02 | Wako Pure Chem Ind Ltd | アミノアルキルスルホン酸の製造方法及びその塩の塩交換方法 |
TW200413522A (en) * | 2002-11-08 | 2004-08-01 | Sumitomo Chemical Co | Washing liquid for semiconductor substrate |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
KR20050096161A (ko) * | 2003-01-29 | 2005-10-05 | 아사히 가라스 가부시키가이샤 | 코팅 조성물, 반사 방지막, 포토레지스트 및 그것을 사용한패턴 형성 방법 |
SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
US7435712B2 (en) * | 2004-02-12 | 2008-10-14 | Air Liquide America, L.P. | Alkaline chemistry for post-CMP cleaning |
EP1580258B1 (en) * | 2004-03-25 | 2009-09-23 | The Procter & Gamble Company | Liquid acidic hard surface cleaning composition |
JP4369284B2 (ja) * | 2004-04-19 | 2009-11-18 | 東友ファインケム株式会社 | レジスト剥離剤 |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US7427362B2 (en) * | 2005-01-26 | 2008-09-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Corrosion-resistant barrier polishing solution |
US7888302B2 (en) | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US7682458B2 (en) * | 2005-02-03 | 2010-03-23 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
-
2006
- 2006-01-12 US US11/330,815 patent/US7534753B2/en active Active
-
2007
- 2007-01-08 TW TW096100724A patent/TWI336729B/zh not_active IP Right Cessation
- 2007-01-09 SG SG200700158-9A patent/SG134245A1/en unknown
- 2007-01-09 KR KR1020070002380A patent/KR20070075303A/ko not_active Application Discontinuation
- 2007-01-09 EP EP07250069A patent/EP1808480B1/en active Active
- 2007-01-09 DE DE602007002643T patent/DE602007002643D1/de active Active
- 2007-01-09 AT AT07250069T patent/ATE445003T1/de not_active IP Right Cessation
- 2007-01-11 JP JP2007003160A patent/JP4473277B2/ja not_active Expired - Fee Related
- 2007-01-12 CN CNA2007100022000A patent/CN101000469A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2007188082A (ja) | 2007-07-26 |
KR20070075303A (ko) | 2007-07-18 |
TW200728455A (en) | 2007-08-01 |
DE602007002643D1 (de) | 2009-11-19 |
JP4473277B2 (ja) | 2010-06-02 |
EP1808480A1 (en) | 2007-07-18 |
CN101000469A (zh) | 2007-07-18 |
TWI336729B (en) | 2011-02-01 |
US7534753B2 (en) | 2009-05-19 |
US20070161528A1 (en) | 2007-07-12 |
ATE445003T1 (de) | 2009-10-15 |
EP1808480B1 (en) | 2009-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG134245A1 (en) | Ph buffered aqueous cleaning composition and method for removing photoresist residue | |
ATE517974T1 (de) | Wässrige stripp- und reinigungszusammensetzung | |
ATE340244T1 (de) | Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen | |
MY146827A (en) | Aqueous cleaning composition for removing residues and method using same | |
TW200630482A (en) | Aqueous based residue removers comprising fluoride | |
ATE495546T1 (de) | Zusammensetzung zum abziehen und reinigen und deren verwendung | |
SG131867A1 (en) | Aqueous cleaning composition and method for using same | |
TW200710205A (en) | Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers | |
DE602007002572D1 (de) | Reinigungsmittelformulierungen | |
DE60222532D1 (de) | Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren | |
MY137363A (en) | Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof | |
ATE405621T1 (de) | Aufüberkritischem kohlenstoffdioxid beruhende formulierung für die entfernung von gegebenenfalls veraschten aluminiumresten nach dem ätzen | |
ATE550319T1 (de) | Verfahren zur herstellung eines aminoacetylpyrrolidincarbonitrilderivats | |
JP2002543272A5 (zh) | ||
TW200706647A (en) | Aqueous cleaner with low metal etch rate | |
DE602007004290D1 (de) | Verfahren und Vorrichtung zur Messtechnikintegration mit einer Ätzbehandlung | |
TW200717628A (en) | Wafer edge cleaning process | |
DE60210889D1 (de) | Vorrichtung zum Sammeln und Entfernen von Flugstaub | |
TW200502381A (en) | Cleaning liquid composition for semiconductor substrate | |
TW200724649A (en) | Composition and method for removing hard mask | |
DE602007012728D1 (de) | Verfahren zur aufreinigung von montelukast | |
TW200700937A (en) | Remover composition for photoresist of semiconductor device | |
TW200641101A (en) | Etching solution for liquid crystal polymer and method for etching liquid crystal polymer | |
FR2921565B1 (fr) | Procede de recuperation d'acides fluorocarboxyliques | |
TW200734836A (en) | Cleaning composition for removing post-dry-etch residues |