SG132651A1 - System and method to increase surface tension and contact angle in immersion lithography - Google Patents

System and method to increase surface tension and contact angle in immersion lithography

Info

Publication number
SG132651A1
SG132651A1 SG200608243-2A SG2006082432A SG132651A1 SG 132651 A1 SG132651 A1 SG 132651A1 SG 2006082432 A SG2006082432 A SG 2006082432A SG 132651 A1 SG132651 A1 SG 132651A1
Authority
SG
Singapore
Prior art keywords
surface tension
contact angle
immersion lithography
increase surface
teflon
Prior art date
Application number
SG200608243-2A
Other languages
English (en)
Inventor
Harry Sewell
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG132651A1 publication Critical patent/SG132651A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
SG200608243-2A 2005-11-29 2006-11-27 System and method to increase surface tension and contact angle in immersion lithography SG132651A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/288,133 US7773195B2 (en) 2005-11-29 2005-11-29 System and method to increase surface tension and contact angle in immersion lithography

Publications (1)

Publication Number Publication Date
SG132651A1 true SG132651A1 (en) 2007-06-28

Family

ID=37697946

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200608243-2A SG132651A1 (en) 2005-11-29 2006-11-27 System and method to increase surface tension and contact angle in immersion lithography

Country Status (7)

Country Link
US (2) US7773195B2 (ko)
EP (1) EP1791026A1 (ko)
JP (1) JP4478139B2 (ko)
KR (2) KR100851644B1 (ko)
CN (1) CN1975580B (ko)
SG (1) SG132651A1 (ko)
TW (1) TWI349170B (ko)

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US20120244459A1 (en) * 2011-03-24 2012-09-27 Nanya Technology Corp. Method for evaluating overlay error and mask for the same
CN103207526B (zh) * 2012-01-16 2016-08-10 昆山允升吉光电科技有限公司 一种曝光修正补偿方法
CN113189849B (zh) * 2021-04-22 2023-08-11 中国科学院光电技术研究所 一种近场光刻浸没系统及其浸没单元和接口模组
CN116263565A (zh) * 2021-12-13 2023-06-16 长鑫存储技术有限公司 光刻胶图案的形成方法和投影式曝光装置

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KR100842889B1 (ko) 2008-07-03
CN1975580B (zh) 2011-06-15
CN1975580A (zh) 2007-06-06
US7773195B2 (en) 2010-08-10
KR100851644B1 (ko) 2008-08-13
US20070122561A1 (en) 2007-05-31
KR20080007299A (ko) 2008-01-18
TW200732855A (en) 2007-09-01
KR20070057031A (ko) 2007-06-04
EP1791026A1 (en) 2007-05-30
JP2007180521A (ja) 2007-07-12
US8456611B2 (en) 2013-06-04
TWI349170B (en) 2011-09-21
JP4478139B2 (ja) 2010-06-09
US20100271604A1 (en) 2010-10-28

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