SG130941A1 - Method for dicing semiconductor wafer - Google Patents

Method for dicing semiconductor wafer

Info

Publication number
SG130941A1
SG130941A1 SG200405126-4A SG2004051264A SG130941A1 SG 130941 A1 SG130941 A1 SG 130941A1 SG 2004051264 A SG2004051264 A SG 2004051264A SG 130941 A1 SG130941 A1 SG 130941A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
dicing
grooves
semiconductor
grinding
Prior art date
Application number
SG200405126-4A
Other languages
English (en)
Inventor
Karl Heinz Priewasser
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG130941A1 publication Critical patent/SG130941A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG200405126-4A 2003-09-25 2004-09-17 Method for dicing semiconductor wafer SG130941A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003333341A JP2005101290A (ja) 2003-09-25 2003-09-25 半導体ウエーハの分割方法

Publications (1)

Publication Number Publication Date
SG130941A1 true SG130941A1 (en) 2007-04-26

Family

ID=34373120

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200405126-4A SG130941A1 (en) 2003-09-25 2004-09-17 Method for dicing semiconductor wafer

Country Status (5)

Country Link
US (1) US20050070074A1 (zh)
JP (1) JP2005101290A (zh)
CN (1) CN1601705A (zh)
DE (1) DE102004044946B4 (zh)
SG (1) SG130941A1 (zh)

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JP4093930B2 (ja) * 2003-07-17 2008-06-04 株式会社東京精密 フレーム搬送プローバ
JP2005223244A (ja) * 2004-02-09 2005-08-18 Tokyo Seimitsu Co Ltd チップの飛び出し位置検出方法
JP2007123687A (ja) * 2005-10-31 2007-05-17 Tokyo Seimitsu Co Ltd 半導体ウェーハ裏面の研削方法及び半導体ウェーハ研削装置
JP2007273941A (ja) * 2006-03-07 2007-10-18 Sanyo Semiconductor Co Ltd 半導体装置の製造方法
JP2009090429A (ja) * 2007-10-10 2009-04-30 Disco Abrasive Syst Ltd マイクロマシンデバイスの加工方法
JP5296386B2 (ja) * 2008-01-11 2013-09-25 株式会社ディスコ 積層デバイスの製造方法
JP2009224454A (ja) * 2008-03-14 2009-10-01 Disco Abrasive Syst Ltd 光デバイスの製造方法
CN101740335B (zh) * 2008-11-14 2011-05-04 中芯国际集成电路制造(北京)有限公司 半导体制造设备和半导体结构的刻蚀方法
JP5308213B2 (ja) 2009-03-31 2013-10-09 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置の製造方法
US9577642B2 (en) * 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
JP5592634B2 (ja) * 2009-10-30 2014-09-17 リンテック株式会社 半導体チップの中間体、半導体ウエハの加工装置及び加工方法
CN102087985B (zh) * 2009-12-03 2013-03-13 无锡华润上华半导体有限公司 晶圆缺陷的检测方法
JP5666876B2 (ja) * 2010-10-21 2015-02-12 株式会社ディスコ 積層セラミックスコンデンサー基板の分割方法
JP6084883B2 (ja) * 2013-04-08 2017-02-22 株式会社ディスコ 円形板状物の分割方法
JP6157991B2 (ja) * 2013-08-27 2017-07-05 株式会社ディスコ ウエーハの管理方法
CN104925741B (zh) * 2014-03-20 2017-03-01 中芯国际集成电路制造(上海)有限公司 一种mems器件切割方法
JP6385131B2 (ja) * 2014-05-13 2018-09-05 株式会社ディスコ ウェーハの加工方法
CN104517804B (zh) * 2014-07-29 2017-10-24 上海华虹宏力半导体制造有限公司 太鼓减薄工艺的去环方法
TWI566290B (zh) * 2015-05-22 2017-01-11 Circular splitting method
KR102468793B1 (ko) * 2016-01-08 2022-11-18 삼성전자주식회사 반도체 웨이퍼, 반도체 구조체 및 이를 제조하는 방법
JP2017157679A (ja) * 2016-03-01 2017-09-07 株式会社ディスコ パッケージウェーハの製造方法及びパッケージウェーハ
JP6657020B2 (ja) * 2016-05-30 2020-03-04 株式会社ディスコ ウェーハの加工方法
CN107619019A (zh) * 2016-07-15 2018-01-23 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制造方法和电子装置
US10109475B2 (en) * 2016-07-29 2018-10-23 Semiconductor Components Industries, Llc Semiconductor wafer and method of reducing wafer thickness with asymmetric edge support ring encompassing wafer scribe mark
JP2018081950A (ja) * 2016-11-14 2018-05-24 株式会社ディスコ ウエーハの加工方法
CN106626107A (zh) * 2016-11-25 2017-05-10 中国电子科技集团公司第五十五研究所 一种轮式金刚刀划片方法
JP6807254B2 (ja) * 2017-03-08 2021-01-06 株式会社ディスコ 研削装置
CN107180891A (zh) * 2017-04-11 2017-09-19 中国电子科技集团公司第十研究所 一种红外探测器的划片方法
US10643951B2 (en) * 2017-07-14 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Mini identification mark in die-less region of semiconductor wafer
KR20220058042A (ko) * 2020-10-30 2022-05-09 삼성전자주식회사 반도체 웨이퍼 및 그 제조 방법
CN112295623B (zh) * 2020-11-02 2021-10-08 苏州汉骅半导体有限公司 微流芯片及其制造方法
CN115319563B (zh) * 2022-08-30 2024-01-19 上海积塔半导体有限公司 固定装置和芯片打磨方法

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US4485553A (en) * 1983-06-27 1984-12-04 Teletype Corporation Method for manufacturing an integrated circuit device
JPH04199733A (ja) * 1990-11-29 1992-07-20 Tokyo Seimitsu Co Ltd 半導体チップの製造方法及びその装置
JPH05198671A (ja) * 1992-01-20 1993-08-06 Matsushita Electron Corp 半導体ウェハーのダイシング方法
JPH08213347A (ja) * 1995-02-01 1996-08-20 Hitachi Ltd 半導体装置の製造方法
US6268641B1 (en) * 1998-03-30 2001-07-31 Kabushiki Kaisha Toshiba Semiconductor wafer having identification indication and method of manufacturing the same
KR100732571B1 (ko) * 1999-10-26 2007-06-27 사무코 테크시부 가부시키가이샤 반도체 웨이퍼의 마킹방법
JP2002043254A (ja) * 2000-07-27 2002-02-08 Hitachi Ltd ダイシング装置及びダイシング方法
JP2002246281A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられるレチクル並びにウェハ
JP4669162B2 (ja) * 2001-06-28 2011-04-13 株式会社ディスコ 半導体ウェーハの分割システム及び分割方法
JP2003173987A (ja) * 2001-12-04 2003-06-20 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP2003209080A (ja) * 2002-01-11 2003-07-25 Disco Abrasive Syst Ltd 半導体ウェーハ保護部材及び半導体ウェーハの研削方法
JP2003224087A (ja) * 2002-01-28 2003-08-08 Disco Abrasive Syst Ltd 半導体ウエーハの加工方法
JP4110390B2 (ja) * 2002-03-19 2008-07-02 セイコーエプソン株式会社 半導体装置の製造方法
US6890836B2 (en) * 2003-05-23 2005-05-10 Texas Instruments Incorporated Scribe street width reduction by deep trench and shallow saw cut

Also Published As

Publication number Publication date
CN1601705A (zh) 2005-03-30
US20050070074A1 (en) 2005-03-31
DE102004044946A1 (de) 2005-04-21
JP2005101290A (ja) 2005-04-14
DE102004044946B4 (de) 2012-02-09

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