SG126885A1 - Semiconductor wafer and processing method for same - Google Patents
Semiconductor wafer and processing method for sameInfo
- Publication number
- SG126885A1 SG126885A1 SG200602544A SG200602544A SG126885A1 SG 126885 A1 SG126885 A1 SG 126885A1 SG 200602544 A SG200602544 A SG 200602544A SG 200602544 A SG200602544 A SG 200602544A SG 126885 A1 SG126885 A1 SG 126885A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafer
- region
- device region
- same
- processing method
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005129741 | 2005-04-27 | ||
JP2005165395 | 2005-06-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG126885A1 true SG126885A1 (en) | 2006-11-29 |
Family
ID=37233648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200602544A SG126885A1 (en) | 2005-04-27 | 2006-04-18 | Semiconductor wafer and processing method for same |
Country Status (6)
Country | Link |
---|---|
US (2) | US7705430B2 (ja) |
JP (4) | JP5613793B2 (ja) |
KR (1) | KR101152873B1 (ja) |
DE (1) | DE102006018644B4 (ja) |
SG (1) | SG126885A1 (ja) |
TW (1) | TWI416653B (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007019379A (ja) * | 2005-07-11 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP4791774B2 (ja) * | 2005-07-25 | 2011-10-12 | 株式会社ディスコ | ウェーハの加工方法及び研削装置 |
JP2007243112A (ja) * | 2006-03-13 | 2007-09-20 | Disco Abrasive Syst Ltd | ウェーハの凹状加工方法及び凹凸吸収パッド |
JP4806282B2 (ja) * | 2006-03-29 | 2011-11-02 | 株式会社ディスコ | ウエーハの処理装置 |
JP5073962B2 (ja) * | 2006-05-12 | 2012-11-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2008073740A (ja) * | 2006-09-22 | 2008-04-03 | Disco Abrasive Syst Ltd | ビアホールの加工方法 |
US8859396B2 (en) | 2007-08-07 | 2014-10-14 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US8012857B2 (en) * | 2007-08-07 | 2011-09-06 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US7989319B2 (en) * | 2007-08-07 | 2011-08-02 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
JP2009064801A (ja) * | 2007-09-04 | 2009-03-26 | Disco Abrasive Syst Ltd | ウエーハ |
US9299664B2 (en) | 2010-01-18 | 2016-03-29 | Semiconductor Components Industries, Llc | Method of forming an EM protected semiconductor die |
US9165833B2 (en) * | 2010-01-18 | 2015-10-20 | Semiconductor Components Industries, Llc | Method of forming a semiconductor die |
US8384231B2 (en) * | 2010-01-18 | 2013-02-26 | Semiconductor Components Industries, Llc | Method of forming a semiconductor die |
JP5664471B2 (ja) * | 2010-06-28 | 2015-02-04 | 信越化学工業株式会社 | 半導体用合成石英ガラス基板の製造方法 |
JP2013012690A (ja) | 2011-06-30 | 2013-01-17 | Toshiba Corp | 半導体ウエハの加工方法及び加工装置、並びに、半導体ウエハ |
FR2982415B1 (fr) | 2011-11-09 | 2014-06-13 | Commissariat Energie Atomique | Procede d'obtention d'un substrat pour la fabrication de semi-conducteur et substrat correspondant |
USD760180S1 (en) * | 2014-02-21 | 2016-06-28 | Hzo, Inc. | Hexcell channel arrangement for use in a boat for a deposition apparatus |
JP6061590B2 (ja) * | 2012-09-27 | 2017-01-18 | 株式会社ディスコ | 表面保護部材および加工方法 |
US9484260B2 (en) | 2012-11-07 | 2016-11-01 | Semiconductor Components Industries, Llc | Heated carrier substrate semiconductor die singulation method |
US9136173B2 (en) | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
JP6156509B2 (ja) | 2013-10-15 | 2017-07-05 | 三菱電機株式会社 | 半導体素子の製造方法 |
US9418894B2 (en) | 2014-03-21 | 2016-08-16 | Semiconductor Components Industries, Llc | Electronic die singulation method |
JP6366351B2 (ja) * | 2014-05-13 | 2018-08-01 | 株式会社ディスコ | ウェーハの加工方法 |
US9385041B2 (en) | 2014-08-26 | 2016-07-05 | Semiconductor Components Industries, Llc | Method for insulating singulated electronic die |
JP2016047561A (ja) * | 2014-08-27 | 2016-04-07 | 株式会社ディスコ | 研削装置 |
JP6534861B2 (ja) * | 2015-06-01 | 2019-06-26 | 株式会社ディスコ | 研削装置 |
JP6510393B2 (ja) * | 2015-12-15 | 2019-05-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP1563719S (ja) * | 2015-12-28 | 2016-11-21 | ||
JP1563718S (ja) * | 2015-12-28 | 2016-11-21 | ||
US10366923B2 (en) | 2016-06-02 | 2019-07-30 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer and apparatus |
JP6692578B2 (ja) * | 2016-06-30 | 2020-05-13 | 株式会社ディスコ | ウェーハの加工方法 |
JP6723892B2 (ja) * | 2016-10-03 | 2020-07-15 | 株式会社ディスコ | ウエーハの加工方法 |
US10373869B2 (en) | 2017-05-24 | 2019-08-06 | Semiconductor Components Industries, Llc | Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus |
JP7067878B2 (ja) | 2017-07-04 | 2022-05-16 | 株式会社ディスコ | 研削装置 |
KR102525490B1 (ko) | 2017-10-24 | 2023-04-24 | 삼성전자주식회사 | 인쇄 회로 기판, 반도체 패키지 및 반도체 패키지의 제조 방법 |
US10818551B2 (en) | 2019-01-09 | 2020-10-27 | Semiconductor Components Industries, Llc | Plasma die singulation systems and related methods |
JP7332398B2 (ja) * | 2019-09-04 | 2023-08-23 | キオクシア株式会社 | 半導体ウェハ |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5364566U (ja) * | 1976-11-02 | 1978-05-31 | ||
JPS5538024A (en) * | 1978-09-11 | 1980-03-17 | Toshiba Corp | Manufacturing of semiconductor device |
JPH03184756A (ja) * | 1989-12-12 | 1991-08-12 | Fuji Electric Co Ltd | ウエーハの研削加工方法 |
JPH0732252A (ja) * | 1993-07-22 | 1995-02-03 | Hitachi Ltd | ワーク自転型研削加工方法、ワーク自転型研削盤及びシリコンウェハ並びにセラミック基板 |
JPH11121414A (ja) * | 1997-10-15 | 1999-04-30 | Toyota Motor Corp | 半導体装置の製造方法 |
JP3292835B2 (ja) * | 1998-05-06 | 2002-06-17 | 信越半導体株式会社 | 薄板ワークの平面研削方法およびその研削装置 |
JP2001257185A (ja) * | 2000-03-13 | 2001-09-21 | Toshiba Corp | 半導体装置の加工方法および半導体基板 |
JP2002111049A (ja) * | 2000-09-26 | 2002-04-12 | Stanley Electric Co Ltd | 半導体発光素子の製造方法 |
JP2002141253A (ja) * | 2000-10-31 | 2002-05-17 | Disco Abrasive Syst Ltd | 半導体装置 |
JP2003007743A (ja) * | 2001-06-22 | 2003-01-10 | Mitsumi Electric Co Ltd | Uvテープ及び半導体集積回路パッケージの製造方法 |
JP3580293B2 (ja) * | 2002-03-26 | 2004-10-20 | 株式会社デンソー | 半導体装置の製造方法 |
TWI241674B (en) * | 2001-11-30 | 2005-10-11 | Disco Corp | Manufacturing method of semiconductor chip |
DE10256985B4 (de) * | 2001-12-12 | 2013-01-10 | Denso Corporation | Verfahren zur Herstellung eines Leistungshalbleiterbauelements |
JP3620528B2 (ja) * | 2001-12-12 | 2005-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
JP4485737B2 (ja) * | 2002-04-16 | 2010-06-23 | 日本エー・エス・エム株式会社 | プラズマcvd装置 |
US6936546B2 (en) * | 2002-04-26 | 2005-08-30 | Accretech Usa, Inc. | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates |
JP4185704B2 (ja) * | 2002-05-15 | 2008-11-26 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US7048608B2 (en) * | 2004-09-22 | 2006-05-23 | Lam Research Corporation | Semiconductor wafer material removal apparatus and method for operating the same |
-
2006
- 2006-04-18 SG SG200602544A patent/SG126885A1/en unknown
- 2006-04-19 TW TW095113984A patent/TWI416653B/zh active
- 2006-04-21 DE DE102006018644A patent/DE102006018644B4/de active Active
- 2006-04-24 US US11/408,971 patent/US7705430B2/en active Active
- 2006-04-25 KR KR1020060037197A patent/KR101152873B1/ko active IP Right Grant
-
2008
- 2008-09-29 US US12/285,091 patent/US20090036034A1/en not_active Abandoned
-
2013
- 2013-04-18 JP JP2013087332A patent/JP5613793B2/ja active Active
- 2013-04-18 JP JP2013087333A patent/JP5613794B2/ja active Active
- 2013-04-18 JP JP2013087331A patent/JP5613792B2/ja active Active
- 2013-04-18 JP JP2013087334A patent/JP5526255B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP5613793B2 (ja) | 2014-10-29 |
JP2013141032A (ja) | 2013-07-18 |
US20090036034A1 (en) | 2009-02-05 |
JP5526255B2 (ja) | 2014-06-18 |
JP5613794B2 (ja) | 2014-10-29 |
KR20060113438A (ko) | 2006-11-02 |
JP2013165287A (ja) | 2013-08-22 |
TWI416653B (zh) | 2013-11-21 |
TW200707625A (en) | 2007-02-16 |
DE102006018644A1 (de) | 2007-01-04 |
JP2013165286A (ja) | 2013-08-22 |
DE102006018644B4 (de) | 2013-02-14 |
US7705430B2 (en) | 2010-04-27 |
KR101152873B1 (ko) | 2012-06-12 |
JP5613792B2 (ja) | 2014-10-29 |
US20060244096A1 (en) | 2006-11-02 |
JP2013141033A (ja) | 2013-07-18 |
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