DE242880C
(zh)
|
|
|
|
|
DE206607C
(zh)
|
|
|
|
|
DE221563C
(zh)
|
|
|
|
|
DE224448C
(zh)
|
|
|
|
|
GB1242527A
(en)
|
1967-10-20 |
1971-08-11 |
Kodak Ltd |
Optical instruments
|
US3573975A
(en)
|
1968-07-10 |
1971-04-06 |
Ibm |
Photochemical fabrication process
|
EP0023231B1
(de)
|
1979-07-27 |
1982-08-11 |
Tabarelli, Werner, Dr. |
Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe
|
FR2474708B1
(fr)
|
1980-01-24 |
1987-02-20 |
Dme |
Procede de microphotolithographie a haute resolution de traits
|
JPS5754317A
(en)
|
1980-09-19 |
1982-03-31 |
Hitachi Ltd |
Method and device for forming pattern
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
US4509852A
(en)
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
US4390273A
(en)
|
1981-02-17 |
1983-06-28 |
Censor Patent-Und Versuchsanstalt |
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
DD206607A1
(de)
|
1982-06-16 |
1984-02-01 |
Mikroelektronik Zt Forsch Tech |
Verfahren und vorrichtung zur beseitigung von interferenzeffekten
|
DD242880A1
(de)
|
1983-01-31 |
1987-02-11 |
Kuch Karl Heinz |
Einrichtung zur fotolithografischen strukturuebertragung
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
JPS6265326A
(ja)
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
JPS62121417A
(ja)
|
1985-11-22 |
1987-06-02 |
Hitachi Ltd |
液浸対物レンズ装置
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
US5040020A
(en)
|
1988-03-31 |
1991-08-13 |
Cornell Research Foundation, Inc. |
Self-aligned, high resolution resonant dielectric lithography
|
JPH03209479A
(ja)
|
1989-09-06 |
1991-09-12 |
Sanee Giken Kk |
露光方法
|
US5121256A
(en)
|
1991-03-14 |
1992-06-09 |
The Board Of Trustees Of The Leland Stanford Junior University |
Lithography system employing a solid immersion lens
|
JPH04305915A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH04305917A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
JP2520833B2
(ja)
|
1992-12-21 |
1996-07-31 |
東京エレクトロン株式会社 |
浸漬式の液処理装置
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
JPH08115867A
(ja)
*
|
1994-10-18 |
1996-05-07 |
Hitachi Ltd |
レジスト塗布装置
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
US6104687A
(en)
|
1996-08-26 |
2000-08-15 |
Digital Papyrus Corporation |
Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
|
US5825043A
(en)
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
JP3612920B2
(ja)
|
1997-02-14 |
2005-01-26 |
ソニー株式会社 |
光学記録媒体の原盤作製用露光装置
|
JPH10255319A
(ja)
|
1997-03-12 |
1998-09-25 |
Hitachi Maxell Ltd |
原盤露光装置及び方法
|
JP3747566B2
(ja)
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
US5900354A
(en)
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
US5900345A
(en)
*
|
1997-10-06 |
1999-05-04 |
Kodak Polychrome Graphics, Llc |
Surfactant in precoat for lithographic plates
|
JPH11176727A
(ja)
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
EP1039511A4
(en)
|
1997-12-12 |
2005-03-02 |
Nikon Corp |
PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
|
JPH11204406A
(ja)
*
|
1998-01-14 |
1999-07-30 |
Nikon Corp |
位置決め装置、位置決め方法および露光装置
|
AU2747999A
(en)
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
JP2000058436A
(ja)
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
US6454030B1
(en)
*
|
1999-01-25 |
2002-09-24 |
Baker Hughes Incorporated |
Drill bits and other articles of manufacture including a layer-manufactured shell integrally secured to a cast structure and methods of fabricating same
|
TWI242111B
(en)
|
1999-04-19 |
2005-10-21 |
Asml Netherlands Bv |
Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
|
JP4504479B2
(ja)
|
1999-09-21 |
2010-07-14 |
オリンパス株式会社 |
顕微鏡用液浸対物レンズ
|
JP2001272604A
(ja)
|
2000-03-27 |
2001-10-05 |
Olympus Optical Co Ltd |
液浸対物レンズおよびそれを用いた光学装置
|
TW591653B
(en)
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
US20020163629A1
(en)
|
2001-05-07 |
2002-11-07 |
Michael Switkes |
Methods and apparatus employing an index matching medium
|
JP2002357641A
(ja)
|
2001-06-04 |
2002-12-13 |
Rohm Co Ltd |
半導体装置
|
US6600547B2
(en)
|
2001-09-24 |
2003-07-29 |
Nikon Corporation |
Sliding seal
|
KR20050044371A
(ko)
|
2001-11-07 |
2005-05-12 |
어플라이드 머티어리얼스, 인코포레이티드 |
광학 스폿 그리드 어레이 프린터
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
US7362508B2
(en)
|
2002-08-23 |
2008-04-22 |
Nikon Corporation |
Projection optical system and method for photolithography and exposure apparatus and method using same
|
JP2004098563A
(ja)
*
|
2002-09-11 |
2004-04-02 |
Magu Planning:Kk |
ハガキ
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
CN100568101C
(zh)
|
2002-11-12 |
2009-12-09 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
SG121818A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
CN101424881B
(zh)
|
2002-11-12 |
2011-11-30 |
Asml荷兰有限公司 |
光刻投射装置
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
SG121829A1
(en)
|
2002-11-29 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
KR20050062665A
(ko)
|
2002-12-10 |
2005-06-23 |
가부시키가이샤 니콘 |
노광장치 및 디바이스 제조방법
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
WO2004053957A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
面位置検出装置、露光方法、及びデバイス製造方法
|
DE10257766A1
(de)
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
JP4362867B2
(ja)
|
2002-12-10 |
2009-11-11 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
CN100429748C
(zh)
|
2002-12-10 |
2008-10-29 |
株式会社尼康 |
曝光装置和器件制造方法
|
KR20050085236A
(ko)
|
2002-12-10 |
2005-08-29 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
WO2004053951A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光方法及び露光装置並びにデバイス製造方法
|
JP4232449B2
(ja)
|
2002-12-10 |
2009-03-04 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
EP1429190B1
(en)
|
2002-12-10 |
2012-05-09 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
TW200421444A
(en)
*
|
2002-12-10 |
2004-10-16 |
Nippon Kogaku Kk |
Optical device and projecting exposure apparatus using such optical device
|
SG171468A1
(en)
|
2002-12-10 |
2011-06-29 |
Nikon Corp |
Exposure apparatus and method for producing device
|
KR101036114B1
(ko)
|
2002-12-10 |
2011-05-23 |
가부시키가이샤 니콘 |
노광장치 및 노광방법, 디바이스 제조방법
|
JP4184346B2
(ja)
*
|
2002-12-13 |
2008-11-19 |
コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ |
層上のスポットを照射するための方法及び装置における液体除去
|
DE60307322T2
(de)
|
2002-12-19 |
2007-10-18 |
Koninklijke Philips Electronics N.V. |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
KR100971440B1
(ko)
|
2002-12-19 |
2010-07-21 |
코닌클리케 필립스 일렉트로닉스 엔.브이. |
레이어 상의 스폿을 조사하기 위한 방법 및 장치
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
JP4604452B2
(ja)
*
|
2003-02-26 |
2011-01-05 |
株式会社ニコン |
露光装置、露光方法、及びデバイス製造方法
|
JP4352930B2
(ja)
*
|
2003-02-26 |
2009-10-28 |
株式会社ニコン |
露光装置、露光方法及びデバイス製造方法
|
WO2004090956A1
(ja)
*
|
2003-04-07 |
2004-10-21 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
JP4428115B2
(ja)
|
2003-04-11 |
2010-03-10 |
株式会社ニコン |
液浸リソグラフィシステム
|
EP1477856A1
(en)
|
2003-05-13 |
2004-11-17 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
TWI295414B
(en)
*
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP1494079B1
(en)
|
2003-06-27 |
2008-01-02 |
ASML Netherlands B.V. |
Lithographic Apparatus
|
JP3862678B2
(ja)
*
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
WO2005006416A1
(ja)
*
|
2003-07-09 |
2005-01-20 |
Nikon Corporation |
結合装置、露光装置、及びデバイス製造方法
|
US6954256B2
(en)
*
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
US7589818B2
(en)
*
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
US7394521B2
(en)
*
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2005071717A1
(ja)
*
|
2004-01-26 |
2005-08-04 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
JP2006060016A
(ja)
*
|
2004-08-20 |
2006-03-02 |
Canon Inc |
流体給排装置及びそれを有する露光装置
|
US7133114B2
(en)
*
|
2004-09-20 |
2006-11-07 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7161654B2
(en)
*
|
2004-12-02 |
2007-01-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|