SG119138A1 - Abrading plate and polishing method using the same - Google Patents

Abrading plate and polishing method using the same

Info

Publication number
SG119138A1
SG119138A1 SG200104884A SG200104884A SG119138A1 SG 119138 A1 SG119138 A1 SG 119138A1 SG 200104884 A SG200104884 A SG 200104884A SG 200104884 A SG200104884 A SG 200104884A SG 119138 A1 SG119138 A1 SG 119138A1
Authority
SG
Singapore
Prior art keywords
abrasive particles
polishing
abrading plate
raised regions
less
Prior art date
Application number
SG200104884A
Other languages
English (en)
Inventor
Wada Yutaka
Hiyama Hirokuni
Hirokawa Kazuto
Matsuo Hisanori
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of SG119138A1 publication Critical patent/SG119138A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
SG200104884A 1998-04-28 1999-04-28 Abrading plate and polishing method using the same SG119138A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13443298 1998-04-28
JP15054698 1998-05-14

Publications (1)

Publication Number Publication Date
SG119138A1 true SG119138A1 (en) 2006-02-28

Family

ID=26468552

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200104884A SG119138A1 (en) 1998-04-28 1999-04-28 Abrading plate and polishing method using the same
SG200407095-9A SG142143A1 (en) 1998-04-28 1999-04-28 Abrading plate and polishing method using the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200407095-9A SG142143A1 (en) 1998-04-28 1999-04-28 Abrading plate and polishing method using the same

Country Status (6)

Country Link
US (2) US6413149B1 (de)
EP (1) EP0999013B1 (de)
KR (1) KR100567981B1 (de)
DE (1) DE69937181T2 (de)
SG (2) SG119138A1 (de)
WO (1) WO1999055493A1 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3770752B2 (ja) 1998-08-11 2006-04-26 株式会社日立製作所 半導体装置の製造方法及び加工装置
DE60032423T2 (de) 1999-08-18 2007-10-11 Ebara Corp. Verfahren und Einrichtung zum Polieren
US6616513B1 (en) 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
US20020016139A1 (en) * 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
JP3914964B2 (ja) * 2000-09-21 2007-05-16 高橋金属株式会社 電解イオン水を混合した水溶性クーラント液及び製造装置
JP2002343756A (ja) * 2001-05-21 2002-11-29 Tokyo Seimitsu Co Ltd ウェーハ平面加工装置
US6706632B2 (en) * 2002-04-25 2004-03-16 Micron Technology, Inc. Methods for forming capacitor structures; and methods for removal of organic materials
JP2003318140A (ja) * 2002-04-26 2003-11-07 Applied Materials Inc 研磨方法及び装置
JP4163485B2 (ja) * 2002-10-25 2008-10-08 不二越機械工業株式会社 両面研磨装置およびこれを用いた研磨加工方法
US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
US20050106359A1 (en) * 2003-11-13 2005-05-19 Honeywell International Inc. Method of processing substrate
JP4767643B2 (ja) * 2005-09-29 2011-09-07 Ｎｔｎ株式会社 テープ研磨装置
US7226345B1 (en) 2005-12-09 2007-06-05 The Regents Of The University Of California CMP pad with designed surface features
US7544618B2 (en) * 2006-05-18 2009-06-09 Macronix International Co., Ltd. Two-step chemical mechanical polishing process
JP5025188B2 (ja) * 2006-08-23 2012-09-12 株式会社ディスコ ウエーハ研削方法
CN100443260C (zh) * 2006-11-08 2008-12-17 大连理工大学 一种硬脆晶体基片的无损伤磨削方法
JP5617387B2 (ja) * 2010-07-06 2014-11-05 富士電機株式会社 垂直磁気記録媒体用基板の製造方法、および、該製造方法により製造される垂直磁気記録媒体用基板
TWI613285B (zh) 2010-09-03 2018-02-01 聖高拜磨料有限公司 粘結的磨料物品及形成方法
US9393669B2 (en) 2011-10-21 2016-07-19 Strasbaugh Systems and methods of processing substrates
TW201323149A (zh) * 2011-10-21 2013-06-16 Strasbaugh 晶圓研磨之系統與方法
US9939529B2 (en) 2012-08-27 2018-04-10 Aktiebolaget Electrolux Robot positioning system
US9610669B2 (en) 2012-10-01 2017-04-04 Strasbaugh Methods and systems for use in grind spindle alignment
US9457446B2 (en) 2012-10-01 2016-10-04 Strasbaugh Methods and systems for use in grind shape control adaptation
JP6064058B2 (ja) * 2012-12-31 2017-01-18 サンーゴバン アブレイシブズ，インコーポレイティド 結合研磨物品および研削方法
CN104994996B (zh) * 2012-12-31 2017-12-05 圣戈班磨料磨具有限公司 粘结研磨制品和碾磨方法
US9102039B2 (en) 2012-12-31 2015-08-11 Saint-Gobain Abrasives, Inc. Bonded abrasive article and method of grinding
DE112014001102T5 (de) 2013-03-31 2015-11-19 Saint-Gobain Abrasifs Gebundener Schleifartikel und Schleifverfahren
JP6217952B2 (ja) 2013-04-15 2017-10-25 アクティエボラゲット エレクトロラックス ロボット真空掃除機
EP2986193B1 (de) 2013-04-15 2020-07-29 Aktiebolaget Electrolux Robotischer staubsauger mit vorstehenden seitenbürsten
EP3084538B1 (de) 2013-12-19 2017-11-01 Aktiebolaget Electrolux Robotische reinigungsvorrichtung mit umgebungsaufzeichnungsfunktion
JP6638987B2 (ja) 2013-12-19 2020-02-05 アクチエボラゲット エレクトロルックス 回転側面ブラシの適応速度制御
JP6750921B2 (ja) 2013-12-19 2020-09-02 アクチエボラゲット エレクトロルックス ロボット掃除機
US9728415B2 (en) 2013-12-19 2017-08-08 STATS ChipPAC Pte. Ltd. Semiconductor device and method of wafer thinning involving edge trimming and CMP
JP6638988B2 (ja) 2013-12-19 2020-02-05 アクチエボラゲット エレクトロルックス サイドブラシを有し、渦巻きパターンで動くロボットバキュームクリーナ
CN105813528B (zh) 2013-12-19 2019-05-07 伊莱克斯公司 机器人清洁设备的障碍物感测爬行
EP3084539B1 (de) 2013-12-19 2019-02-20 Aktiebolaget Electrolux Priorisierung von reinigungsbereichen
JP6687286B2 (ja) 2013-12-19 2020-04-22 アクチエボラゲット エレクトロルックス ロボット掃除機およびランドマーク認識方法
JP6336063B2 (ja) 2013-12-20 2018-06-06 アクチエボラゲット エレクトロルックス ダスト容器
US10518416B2 (en) 2014-07-10 2019-12-31 Aktiebolaget Electrolux Method for detecting a measurement error in a robotic cleaning device
US10499778B2 (en) 2014-09-08 2019-12-10 Aktiebolaget Electrolux Robotic vacuum cleaner
US10729297B2 (en) 2014-09-08 2020-08-04 Aktiebolaget Electrolux Robotic vacuum cleaner
CN106998980B (zh) 2014-12-10 2021-12-17 伊莱克斯公司 使用激光传感器检测地板类型
CN114668335A (zh) 2014-12-12 2022-06-28 伊莱克斯公司 侧刷和机器人吸尘器
KR102339531B1 (ko) 2014-12-16 2021-12-16 에이비 엘렉트로룩스 로봇 청소 장치를 위한 경험-기반의 로드맵
JP6532530B2 (ja) 2014-12-16 2019-06-19 アクチエボラゲット エレクトロルックス ロボット掃除機の掃除方法
US11099554B2 (en) 2015-04-17 2021-08-24 Aktiebolaget Electrolux Robotic cleaning device and a method of controlling the robotic cleaning device
EP3344104B1 (de) 2015-09-03 2020-12-30 Aktiebolaget Electrolux System aus robotischen reinigungsvorrichtungen
KR102588486B1 (ko) 2016-03-15 2023-10-11 에이비 엘렉트로룩스 로봇 청소 장치 및 로봇 청소 장치에서의 절벽 검출 실시 방법
US11122953B2 (en) 2016-05-11 2021-09-21 Aktiebolaget Electrolux Robotic cleaning device
JP6680639B2 (ja) * 2016-07-27 2020-04-15 株式会社ディスコ 加工方法
JP6858529B2 (ja) * 2016-10-14 2021-04-14 株式会社ディスコ 保持テーブルの保持面形成方法、研削装置及び研削ホイール
JP7243967B2 (ja) 2017-06-02 2023-03-22 アクチエボラゲット エレクトロルックス ロボット清掃デバイスの前方の表面のレベル差を検出する方法
CN111093447B (zh) 2017-09-26 2022-09-02 伊莱克斯公司 机器人清洁设备的移动控制
CN112259454B (zh) * 2019-07-22 2024-04-12 华邦电子股份有限公司 化学机械研磨制程
WO2021041413A1 (en) * 2019-08-27 2021-03-04 Applied Materials, Inc. Chemical mechanical polishing correction tool

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0807492A2 (de) * 1996-05-16 1997-11-19 Ebara Corporation Verfahren und Vorrichtung zum Polieren von Werkstücken
JPH10270394A (ja) * 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk ウエハ基板の総合研磨方法及びその装置
JP2000052235A (ja) * 1998-08-06 2000-02-22 Yuzo Mori ポリッシング方法及び装置

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3121143A (en) * 1962-03-30 1964-02-11 Alfred E Landry Rotary electric switch
JPS6017664B2 (ja) * 1980-02-01 1985-05-04 株式会社 デイスコ 研削ホィ−ル
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US4010583A (en) * 1974-05-28 1977-03-08 Engelhard Minerals & Chemicals Corporation Fixed-super-abrasive tool and method of manufacture thereof
JPS6012191B2 (ja) 1979-09-25 1985-03-30 昭和電工株式会社 シリコン半導体の鏡面仕上げ用研摩素子及び鏡面仕上げ法
JPS58143948A (ja) 1982-02-19 1983-08-26 Hitachi Ltd ウエハ研削装置
AU570439B2 (en) 1983-03-28 1988-03-17 Compression Labs, Inc. A combined intraframe and interframe transform coding system
US4652275A (en) * 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Erodable agglomerates and abrasive products containing the same
JPH01140967A (ja) 1987-11-27 1989-06-02 Hitachi Ltd 研削装置
JP3014062B2 (ja) 1991-05-30 2000-02-28 東芝タンガロイ株式会社 精密加工用砥石
JP3048073B2 (ja) 1991-06-27 2000-06-05 東芝タンガロイ株式会社 精密加工用レジンボンド砥石
US5135892A (en) * 1991-07-12 1992-08-04 Norton Company Boron suboxide material and method for its preparation
JPH05285850A (ja) 1992-04-10 1993-11-02 Nippon Steel Corp 研削・研磨ホイールおよび研削・研磨方法
JPH05309566A (ja) 1992-04-21 1993-11-22 Sony Corp 研削液供給構造
US6099394A (en) * 1998-02-10 2000-08-08 Rodel Holdings, Inc. Polishing system having a multi-phase polishing substrate and methods relating thereto
US5307593A (en) * 1992-08-31 1994-05-03 Minnesota Mining And Manufacturing Company Method of texturing rigid memory disks using an abrasive article
EP0674565B1 (de) * 1992-12-17 1997-11-05 Minnesota Mining And Manufacturing Company Aufschlaemmungen mit reduzierter viskositaet, daraus hergestellte schleifgegenstaende und verfahren zur herstellung der gegenstaende
US5549962A (en) * 1993-06-30 1996-08-27 Minnesota Mining And Manufacturing Company Precisely shaped particles and method of making the same
US5503592A (en) * 1994-02-02 1996-04-02 Turbofan Ltd. Gemstone working apparatus
FR2718379B3 (fr) * 1994-04-12 1996-05-24 Norton Sa Meules super abrasives.
TW383322B (en) * 1994-11-02 2000-03-01 Norton Co An improved method for preparing mixtures for abrasive articles
JP3605192B2 (ja) 1995-08-10 2004-12-22 不二越機械工業株式会社 超微粉シリカ砥石およびその製造方法
EP0874390B1 (de) * 1995-09-13 2004-01-14 Hitachi, Ltd. Polierverfahren
JPH09174428A (ja) 1995-12-27 1997-07-08 Toshiba Corp ラップ加工方法
JP3510036B2 (ja) 1996-02-22 2004-03-22 株式会社ルネサステクノロジ 半導体装置の製造方法
US5885134A (en) * 1996-04-18 1999-03-23 Ebara Corporation Polishing apparatus
US5782675A (en) * 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers
JPH10134316A (ja) 1996-10-24 1998-05-22 Hitachi Metals Ltd 磁気ヘッドの加工方法
JP3348429B2 (ja) * 1996-12-26 2002-11-20 信越半導体株式会社 薄板ワーク平面研削方法
JP3679882B2 (ja) * 1997-02-07 2005-08-03 株式会社荏原製作所 研磨用クロスのドレッサー及びその製造方法
US5993298A (en) * 1997-03-06 1999-11-30 Keltech Engineering Lapping apparatus and process with controlled liquid flow across the lapping surface
US6019670A (en) * 1997-03-10 2000-02-01 Applied Materials, Inc. Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system
US6062958A (en) * 1997-04-04 2000-05-16 Micron Technology, Inc. Variable abrasive polishing pad for mechanical and chemical-mechanical planarization
US5990010A (en) * 1997-04-08 1999-11-23 Lsi Logic Corporation Pre-conditioning polishing pads for chemical-mechanical polishing
JPH10315131A (ja) * 1997-05-23 1998-12-02 Hitachi Ltd 半導体ウエハの研磨方法およびその装置
JPH10329031A (ja) 1997-05-29 1998-12-15 Hitachi Chem Co Ltd 半導体素子類の研磨方法およびそれに用いる樹脂砥石の製造方法
JP3722591B2 (ja) * 1997-05-30 2005-11-30 株式会社日立製作所 研磨装置
MY124578A (en) * 1997-06-17 2006-06-30 Showa Denko Kk Magnetic hard disc substrate and process for manufacturing the same
US5957754A (en) * 1997-08-29 1999-09-28 Applied Materials, Inc. Cavitational polishing pad conditioner
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US5972162A (en) * 1998-01-06 1999-10-26 Speedfam Corporation Wafer polishing with improved end point detection
JPH11198045A (ja) 1998-01-19 1999-07-27 Tosoh Corp 研磨用成形体、それを用いた研磨用定盤及び研磨方法
JPH11300607A (ja) * 1998-04-16 1999-11-02 Speedfam-Ipec Co Ltd 研磨装置
US5897426A (en) * 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6152806A (en) * 1998-12-14 2000-11-28 Applied Materials, Inc. Concentric platens
US6322427B1 (en) * 1999-04-30 2001-11-27 Applied Materials, Inc. Conditioning fixed abrasive articles
US6050882A (en) * 1999-06-10 2000-04-18 Applied Materials, Inc. Carrier head to apply pressure to and retain a substrate
US6325709B1 (en) * 1999-11-18 2001-12-04 Chartered Semiconductor Manufacturing Ltd Rounded surface for the pad conditioner using high temperature brazing
US6431959B1 (en) * 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0807492A2 (de) * 1996-05-16 1997-11-19 Ebara Corporation Verfahren und Vorrichtung zum Polieren von Werkstücken
JPH10270394A (ja) * 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk ウエハ基板の総合研磨方法及びその装置
JP2000052235A (ja) * 1998-08-06 2000-02-22 Yuzo Mori ポリッシング方法及び装置

Also Published As

Publication number Publication date
US6942548B2 (en) 2005-09-13
DE69937181T2 (de) 2008-06-19
KR100567981B1 (ko) 2006-04-05
EP0999013B1 (de) 2007-09-26
EP0999013A1 (de) 2000-05-10
DE69937181D1 (de) 2007-11-08
SG142143A1 (en) 2008-05-28
EP0999013A4 (de) 2004-07-14
US6413149B1 (en) 2002-07-02
WO1999055493A1 (fr) 1999-11-04
US20020006768A1 (en) 2002-01-17
KR20010014244A (ko) 2001-02-26

Similar Documents

Publication Publication Date Title
SG119138A1 (en) Abrading plate and polishing method using the same
US7323414B2 (en) Method for polishing a substrate surface
TW428225B (en) A method of polishing a surface of a substrate, a method of manufacturing semiconductor device, and an apparatus of manufacturing the same
EP1566421A3 (de) CMP Poliermittel, flüssiger Zusatz für CMP Poliermittel und Verfahren zum Polieren eines Substrates
KR970003591A (ko) 반도체장치의 제조방법 및 반도체 제조장치
CN101733699B (zh) 用于抛光具有应变松弛Si1-xGex层的半导体晶片的方法及该方法的用途
TW200621966A (en) Abrasive, method of polishing wafer, and method of producing semiconductor device
DE69417006D1 (de) Herstellungsverfahren von gesinterten Schleifkörnern und Vorrichtung zu deren Sinterung
JP2011103460A (ja) 半導体ウェハの研磨方法
HK1050377A1 (en) Composition and method for planarizing surfaces.
TWI265958B (en) CMP polishing agent, a method for polishing a substrate and method for manufacturing semiconductor device using the same, and an additive for CMP polishing agent
WO2002066206A3 (en) Wafer carrier and method of material removal from a semiconductor wafer
EP1055486A3 (de) Abrichtvorrichtung und Poliervorrichtung
MY105865A (en) Fine polishing compound for wafer
EP0708160A3 (de) Suspension zum Gemisch-mechanisch Polieren von Metallschichten
WO1998022978A1 (en) Method of preparing silicon carbide wafers for epitaxial growth
JP2005007520A (ja) 研磨パッド及びその製造方法並びに研磨方法
KR100832768B1 (ko) 웨이퍼 연마 장치 및 웨이퍼 연마 방법
SG97161A1 (en) Polishing method and polishing apparatus
GB2308010A (en) Method of lapping a wafer
EP0728531A4 (de) Verfahren zur herstellung einer schicht aus teilhen auf einem substrat, verfahren zum glatten unregelmassiger substratoberflachen und teilchenbeschichtiges substrat
EP0796702A3 (de) Poliervorrichtung
JPH0475338A (ja) 機械・化学研磨法
EP0607441A4 (en) Abrading device and abrading method employing the same.
KR20220019053A (ko) 기판들을 패키징하기 위한 평탄화 방법들