KR970003591A - 반도체장치의 제조방법 및 반도체 제조장치 - Google Patents

반도체장치의 제조방법 및 반도체 제조장치 Download PDF

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KR970003591A
KR970003591A KR1019960020694A KR19960020694A KR970003591A KR 970003591 A KR970003591 A KR 970003591A KR 1019960020694 A KR1019960020694 A KR 1019960020694A KR 19960020694 A KR19960020694 A KR 19960020694A KR 970003591 A KR970003591 A KR 970003591A
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ionized water
polishing
abrasive
semiconductor
waste liquid
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KR1019960020694A
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KR100272383B1 (ko
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마리코 시모무라
나오토 미야시타
히로유키 오하시
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사토 후미오
가부시키가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

본 발명은 연마제에 금속불순물을 포함하지 않은 이온수를 사용하여 금속오염을 감소시킴과 더불어 연마비율을 제어할 수 있는 반도체장치의 제조방법 및 금속오염이 적은 반도체 제조장치를 제공한다.
톱플링(50)에 의해 보호유지된 반도체 웨이퍼(도시하지 않았음)의 폴리싱 처리에 있어서, 연마제와 함께 금속불순물을 포함하지 않은 알칼리 이온수 또는 산성 이온수를 반도체 웨이퍼의 폴리싱에 이용한다. 연마포(19)에 연마제를 주입하는 파이프(51)와 이온수를 주입하는 파이프(52)를 설치한다. 금속 불순물을 포함하지 않은 이온수를 사용함으로써 연마제를 알칼리성 또는 산성으로 유지할 수 있기 때문에, 폴리싱 때에 금속오염을 감소시킴과 더불어 폴리싱한 어떤 반도체 웨이퍼의 표면을 안정화시킬 수 있다.

Description

반도체장치의 제조방법 및 반도체 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예의 폴리싱장치의 개략 사시도.

Claims (15)

  1. 순수 또는 초순수의 전기분해에 의해 생성된 이온수와, 연마입자를 포함한 연마제를 연마포에 공급하면서 이들 연마포를 이용하여 반도체 웨이퍼의 폴리싱된 막을 갖춘 주면을 폴리싱하는 것을 특징으로 하는 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 연마포르의 상기 이온수 및 상기 연마제의 공급은 서로 다른 공급수단에 의해 공급된 것을 특징으로 하는 반도체장치의 제조방법.
  3. 연마포의 가공점에 연마입자를 포함한 연마제를 공급하면서 이 연마포를 이용하여 반도체 웨이퍼의 폴리싱된 막을 갖춘 주면을 폴리싱하는 공정과, 순수 또는 초순수의 전기분해에 의해 생성한 이온수에 의해 폴리싱한 상기 반도체 웨이퍼의 상기 폴리싱된 막의 표면을 안정화 하는 공정을 구비하여 이루어진 것을 특징으로 하는 반도체장치의 제조방법.
  4. 제2항에 있어서, 상기 이온수는 알칼리 이온수 또는 산성 이온수인 것을 특징으로 하는 반도체장치의 제조방법.
  5. 제4항에 있어서, 상기 이온수가 알칼리 이온수인 경우에 있어서, 산성 이온수에 의해 폴리싱에 따라 생성된 폐액을 중화시키고, 상기 이온수가 산성 이온수인 경우에 있어서, 알칼리 이온수에 의해 폴리싱에 따라 생성된 폐액을 중화시키는 것을 특징으로 하는 반도체장치의 제조방법.
  6. 제5항에 있어서, 상기 이온수 내 산성 이온수는 상기 반도체 웨이퍼상의 금속으로 이루어진 폴리싱된 막의 표면을 안정화 하고, 상기 이온수 내 알칼리성 및 산성 이온수는 상기 반도체 웨이퍼 상의 산화물, 질화물, 다결정 실리콘 및 실리콘 단결정의 어느쪽으로 이루어진 폴리싱된 막의 표면을 안정화하는 것을 특징으로 하는 반도체장치의 제조방법.
  7. 연마포(19)와 상기 연마포가 표면에 취부되고, 연마판구동축에 의해 회전되는 연마판(17)과, 반도체 웨이퍼를 보호유지하고, 이 반도체 웨이퍼의 폴리싱되는 막을 갖춘 주면을 상기 연마포(19) 표면에 단단히 누른 톱플링(50), 순수 또는 초순수의 전기분해에 의해 생성된 이온수를 상기 연마포(19)에 공급하는 이온수 공급파이프(52) 및, 연마입자를 포함하는 연마제를 상기 연마포(19)에 공급하는 연마제 공급파이프(51)를 구비하여 이루어진 것을 특징으로 하는 반도체 제조장치.
  8. 제7항에 있어서, 상기 이온수 공급파이프(52) 및 상기 연마제 공급파이프(51)는 가동하고, 상기 연마포(19)의 임의의 위치 상에 위치된 것을 특징으로 하는 반도체 제조장치.
  9. 제8항에 있어서, 상기 이온수 공급파이프(52) 및 상기 연마제 공급파이프(51)는 공급구 근방에서 일체화 된 것을 특징으로 하는 반도체 제조장치.
  10. 제9항에 있어서, 상기 연마판(17)은 폐액파이프(55)가 접속된 외위기(53)에 수납되어 있으며, 이 폐액파이프(55)에는 역류방지밸브(56)가 취부된 것을 특징으로 하는 반도체 제조장치.
  11. 제10항에 있어서, 상기 연마판(17)은 폐액파이프(55)가 접속된 외위기(53)에 수납되어 있으며, 이 폐액파이프(55)에는 침전주(57)가 취부된 것을 특징으로 하는 반도체 제조장치.
  12. 제11항에 있어서, 상기 이온수 공급파이프(52)는 순수 또는 초순수의 전기분해를 행하는 전해조(60)에 접속되고, 이 전해조에는 더욱이, 상기 폐액파이프(55)에 접속된 이온수 배출파이프(59)가 접속된 것을 특징으로 하는 반도체 제조장치.
  13. 제3항에 있어서, 상기 이온수는 알칼리 이온수 또는 산성 이온수인 것을 특징으로 하는 반도체장치의 제조방법.
  14. 제13항에 있어서, 상기 이온수가 알칼리수인 경우에 있어서, 산성 이온수에 의해 폴리싱에 따라 생성된 폐액을 중화시키고, 상기 이온수가 산성 이온수인 경우에 있어서, 알칼리 이온수에 의해 폴리싱에 따라 생성된 폐액을 중화시키는 것을 특징으로 하는 반도체장치의 제조방법.
  15. 제14항에 있어서, 상기 이온수의 내 산성 이온수는 상기 반도체 웨이퍼 상의 금속으로 이루어진 폴리싱된 막의 표면을 안정화 하고, 상기 이온수의 내 알칼리성 및 산성 이온수는 상기 반도체 웨이퍼 상의 산화물, 질화물, 다결정 실리콘 및 실리콘 다결정의 어느쪽으로 이루어진 폴리싱된 막의 표면을 안정화 하는 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960020694A 1995-06-13 1996-06-11 이온수를 이용하여 연마속도를 제어하기 위한 연마방법 및 연마장치 KR100272383B1 (ko)

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JP95-170303 1995-06-13
JP17030395A JP3311203B2 (ja) 1995-06-13 1995-06-13 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法

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KR970003591A true KR970003591A (ko) 1997-01-28
KR100272383B1 KR100272383B1 (ko) 2000-12-01

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