1293591 14386twf.doc/g 九、發明說明： 【發明所屬之技術領域】 ^明疋有關於一種化學機械研磨（Ο·—1 、商ΓΓΓ1 P0lishing ’CMP)裳置，且特別是有關於一種 良好之研磨效果的化學機械研 磨墊的調節方法。 【先前技術】 迎著（件尺寸持输減’微影曝光解析度需要相對地隨之 隨著曝光景深的縮減’對於晶片表面之高低起伏輪 Γ:二二又之要求將更為嚴苛。化學機械研磨是目前能提供超 ㈣貝體電路製程全面性平坦化的技術，它 除了用於晶片表面輪廓之平坦化外，亦可經由金屬研磨之U 應f於垂纽水平金屬導線連接（Interc。瞻ts)之製作， 巾元賤騎隔賴作及先進元叙製作，或微機 電糸、、充平坦化以及平面顯示器之製作等。 圖1繪示為習知一種化學機械研磨裝置的示意圖。請參照 ^ 19二知的化學麵研磨裝置100至少包括研磨盤110、研 ^ 、研磨液供給管路⑽、研磨墊調節器15〇，以及 學液供給管路16〇等。 請茶照圖1，研磨盤110表面上具有多购磨液出口 112, 而_墊120係配置於研磨盤11〇上娜盤11〇係透過 載機台（未緣示）而帶動研磨塾12〇旋轉，並配合研磨液 於晶片本輕是半導體製程巾需要全面平坦化⑹咖 Plantation)的結構’進行化學機械研磨製程。 1293591 14386twf.doc/g 研磨液供給管路130係連胁研雜UG底部，且研 係由研磨液供給槽140提供，並適於從研磨盤11〇下方诚由研 磨液出π 112供給至研磨塾120表面上。由於研磨液為: flurry) ’若研練濃度太高，献研聽舰殘留在研磨 汶出口 112 ’將造成研磨液出口 112之堵塞。而部分堵塞之 磨液出口 112將無法繼續均勻地提供研磨液到研磨墊^上， 來’料響後祕學機械研磨之平坦度或甚至造成元件 請繼續參照圖1，研磨墊調節器150係配置於研磨墊12〇 j ’而化學液供給管路16(H系連接研磨塾調節器15〇盘 ί=7G:/·從化學液供給槽17_化學液供 、口 b路160，而心供至研磨墊調節器π。。 此日士當t研磨墊12G之表面將會附著研磨液殘渣， 1?/矣* °周^ 15G 利用來調節研磨墊12G，將研i塾 供化二殘渣移除。然而，單從研磨塾調節器150提 功效=2〇上之調節動作’其對研磨㈣的調節 【發明内容】 適於目的就是在提供—觀學频·裝置，其 節功效Γ 化學機械研磨效果與較佳之研磨墊的調 適於====二提:-種研磨塾的調節方法，其 太㈣使其有祕之化學鋪研磨效果。 x —種化學機械研磨裝置，至少包括-研磨盤、一 1293591 14386twf.doc/g 研磨塾、-研舰供給管路、—研雜調節器、—化學液供认 I路以及-分流管路。其中，研磨盤表面上具有魏個研磨^ 出口，而研磨塾係配置於研磨盤上。研磨液供給管路係連接於 研磨盤底部，且適於從研磨盤下$經由研磨液出口供給一研磨 液至研磨墊表面上。研磨墊調節器係配置於研磨墊上方，而 學液供給管路係連接於研磨墊調節器，且適於供給化學液至研 f墊調節ϋ。分辭路係連接於研練供給管路與化學液供給 官路之間’適於使化學祕由化學液供給管路磨二 路以及研磨液出口供給至研磨墊表面上。 夜仏、、Ό g 依照触實補所述之化學機械研縣置，上述 之=分Ί路上更設置―第—控制閥’且於研磨液供給管路上 更叹置一第二控制閥。其中，當供應研磨液至研磨墊時， =閥，㈣’而第二控制閥開啟。另外，當供應化學液至研磨 蚪，第一控制閥開啟，而第二控制閥關閉。 、本發明提出一種研磨墊的調節方法，適用於上述之化學機 ，研磨裝置。此研·_節方法是細辦機械研磨裝置對 晶圓上的待研磨層進行研磨之後，將化學液經由化學液供給管 路供=至研磨塾調節器’同時將化學液經由分流管路、研^ 供給官路供給至研磨墊上，並使料雜調㈣瓣研磨塾 面。 又 依照本發明的較佳實施例所述之研磨墊的調節方法，上 之待研磨層包括金屬層。 ； 入依照本發明的較佳實施例所述之研磨墊的調節方法，上述 之金屬層包括銅，而研磨液例如包括酸性溶液，化學液例如包 1293591 14386twf.doc/g 括酸性溶液，且化學液可以是含草酸溶液。 依照本發明的較佳實施例所述之研磨墊的調節方法，上述 之金屬層包括鎢，而研磨液例如包括酸性溶液，且化學液例如 為去離子水。 依照本發明的較佳實施例所述之研磨墊的調節方法，上述 之金屬層包括氮化鈕，而研磨液例如包括鹼性溶液，且化學液 例如為去離子水。 / ^本發明因採用自研磨墊之上方及下方雙向傳輸之化 學液供給管路，使得自研磨墊之下方也可以提供化學液， 除堵塞在研磨液出口之研磨液殘渣，進而使後續的研 ^製程中之研磨液可以均勻地分佈在研磨墊上，以增進研 磨效果。此外，在研磨墊之調節步驟中，來自於研磨墊上 方與下方之化學液，可使得化學液更均勻地分佈在研磨墊 上，以使研磨墊獲得較佳之調節效果，並進一步使得研磨 墊在後續的化學機械研磨製程中，具有較佳之研磨狀態。 為讓本發明之上述和其他目的、特徵和優點能更明顯 廑，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 圖^示為本發明-較佳實施例中一種化學機械研磨裝 ，不意圖。請參照圖2，本實酬之化學機械研磨裝置2〇〇 夕包，研磨盤210、研磨墊22〇、研磨液供給管路23〇、研 °墊°周節态250、化學液供給管路260以及分流管路280。 請參照圖2 ’研磨盤210係設置在一承載機台（未繪示） 1293591 14386twf.doc/g 上，並經由承載機台（未繪示）帶動研磨盤21〇而旋轉，而研 磨墊220係配置於研磨盤21〇上，且研磨墊220係伴隨著研磨 盤210同時進行旋轉，以磨除待研磨層。 1 請繼續參照圖2，研磨盤210表面上具有多個研磨液出口 212，且研磨液供給管路230係連接於研磨盤21〇之底部，並 適於從研磨盤210下方經由研磨液出口 212供給研磨液至研磨 塾220表面上。此外，研磨墊21〇之表面亦具有多個細小之孔 φ 洞（未繪示），研磨液可繼續透過研磨墊210表面之孔洞而傳 輸至研磨墊210之研磨表面，以配合研磨墊21 〇對於待 進行研磨。 曰 請參照圖2，研磨墊調節器25〇係配置於研磨墊22〇 • 上方，而化學液供給管路260係連接於研磨墊調節器25〇， 且適於供給化學液至研磨墊調節器25〇。此研磨墊調節器 ^ 250例如具有許多鑽石刷頭，可接觸研磨墊220之表面以 去除研磨墊220表面粗糙不平之絨毛與附著於研磨墊22〇 表面上之研磨液殘渣，且配合化學液與附著在研磨墊22〇 φ 上之研磨液殘〉查發生反應，進而可增進去除研磨液殘渣之 效果。 請參照圖2，分流管路280係連接於研磨液供給管路23() 與化學液供給管路260之間，適於使化學液經由化學液供給管 路260、研磨液供給管路230以及研磨液出口 212供給至研磨 塾220表面上。 在一較佳實施例中，利用分流管路28〇之設計，將使得化 學液也可透過分流管路280,自研磨墊220的下方供給至研磨 1293591 14386twf.doc/g 墊220上，以對研磨墊220進行調節。特別是，由於化學液也 可由研磨墊220下方供給，所以當化學液通過研磨盤21〇之研 磨液出口 212時，化學液亦可溶除堆積在研磨液出口 Μ?之研 磨液殘渣，同時將達到清洗研磨液出口 M2之功效。 睛參照圖2，在一實施例中，分流管路280上更設置一控 制閥280a，且於研磨液供給管路23〇上更設置另一控制閥 230a。其中，當供應研磨液至研磨墊22〇時，控制閥28此關 閉，而控制閥230a開啟。另外，當供應化學液至研磨墊22q 時，控制閥280a開啟，而控制閥23〇a關閉。 分流管路280上設置之控制閥28〇a，係用以控制化學液 的流動，㈣磨液供給管路23〇上設置之控制閥23〇&，係用 以控制研磨液的流動。在一實施例中，當控制間_開啟 控綱230a係為關閉狀態，此時化學液除了可從化學 管路260供給至研磨墊調節器25〇，自研磨墊22〇上方傳钤^ 研磨墊220外，化學液亦可自化學液供給槽27〇依序 ^ 管路280、控制閥280a、研磨液供給管路23〇以及研磨= =二=塾220下方到達研磨塾220上，以進行研雜 反之，㊄控制閥280a關閉時，且控制閥23〇a開啟士 磨液可從研磨液供給槽24〇經過研磨液供 : 厂2而到達研触。上，以進行後續化學 本貫施例之化學機械研磨裝置2〇〇， 之設計，所以可自研磨塾22fl之上方及下方 1293591 14386twf.doc/g 研磨墊220上。其中自研磨塾220下方提供化學液之過程中， 化f液可洛除堵塞在研磨液出口 212之研磨粒子，進而使得在 後縯的研磨製程中，研磨液可以均勻地分佈在研磨墊22〇上， 以增進研磨效果。 明vk、、、i參妝圖2以說明本發明之研磨墊220的調節方法， 此研磨墊p的調節方法翻於上述化學機械研磨裝置·。 一此调即方法是在以化學機械研磨裝置2〇〇對一晶圓（未繪 示）上的待研磨層（未冷示）進行研磨之後，將化學液經由化 學，供，官路供給至研磨墊調節器25()，同時將化學液經 由分流官路280、研磨液供給管路230供給至研磨墊220上， 並，用研磨墊_$ 25G調節研磨墊220表面。請參照圖2， 本貝施例之研磨墊220的調節方法例如包括下列步驟。 百先，將化學液從化學液供給槽27〇經由化學液供給管路 260傳輸至研磨墊調節器25()，再自研磨墊22〇上方傳輸至研 磨墊22G上。於此同時，控制閥2施為開啟狀態，且控制閥 230\為關閉狀態，所以化學液會再經由分流管路·研磨液 供給管路230以及磨液出口 212，自研磨墊22〇下方傳輸到 研磨塾220上，而因為控制閥23〇a為關閉狀態，所以研磨液 並不會自研磨液供給管路230中傳輸到研磨墊22〇上。 之後，繼續使科磨墊調節器250調節研雜220表面， 研磨墊㈣☆ ’例如具有許多鑽石刷頭，可接觸研磨墊22〇 之表面j再配合自研磨墊22〇上方與下方傳輸至研磨塾22〇 上之化學液，進而將附著於研磨墊22〇絲之_液殘渣以及 研磨塾220纟面不平整之絨毛移除。如使一來，將可使研磨墊 1293591 14386twf.doc/g 220維持在適當的粗糙度（r〇Ughness )，並使得研磨墊220 在後續的化學機械研磨製程中，可以吸附足夠的研磨液，以維 持較高、較穩定的研磨速率（p〇lishing rate )。 請繼續參照圖2，在上述之調節步驟中，特別是化學液可 自研磨墊220下方傳輸至研磨塾220上之設計，使得化學液可 以與堵基在研磨液出口 212之研磨液殘渣發生化學反應，以利 於移除堵塞在研磨液出口 212的研磨液殘渣。換言之，研磨液 .出口 212可保持暢通，進而可使研磨液能均勻分佈在研磨墊 220上，而提升整體化學機械研磨裝置2〇〇之研磨效能，同時 亦具有延長研磨盤210之使用壽命的效果。 此外，上述之待研磨層例如為金屬層，而在一較佳實施例 中，金屬層例如為銅金屬時，其相對應使用之研磨液例如為酸 性溶液，且使用之化學液例如為酸性溶液，而此化學液可以是 含草酸溶液。在另一實施例中，上述之金屬層例如為鎢時，其 相對應所使用之研磨液例如為酸性溶液，且使用之化學液例如 為去離子水。此外，在又一實施例中，金屬層例如是氮化鈕時， I 其相對應所使用之研磨液例如為驗性溶液，且使用之化學液例 如為去離子水。 綜上所述，本發明之化學機械研磨裝置與其研磨墊調 節方法，具有下列優點·· (1)本發明之化學機械研磨裝置具有分流管路之設 计’在對研磨墊進行調節時，化學液可以通過研磨液出口 以去除堵塞在研磨液出口的研磨液殘渣，進而提供後續研 磨製程良好的研磨效果。 13 1293591 14386twf.doc/g (2) 本發明之化學機械研磨裝置可雙向傳輪化風 攻以在研磨墊调郎時得到較佳之調節效果。 (3) 本發社化學機係研磨裝置，纟於研磨液出口 季父不會堵塞，_研磨赌具有較長之使用壽命。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限=本發明，任何熟習此技藝者，在不脫離本發明之精 ^範圍内，當可作些許之更動與潤御，因此本發明之保譜 鲁 fe圍當視後附之申請專利範圍所界定者為準。 又 【圖式簡單說明】 圖1繪示為習知中一種化學機械研磨裝置的示意圖。 圖2繪示為本發明一較佳實施例之一種化學機械研 胃 裝置的示意圖。 【主要元件符號說明】 % 100:習知的化學機械研磨裝置 110 :研磨盤 112 :研磨液出口 _ 120 :研磨墊 130 :研磨液供給管路 140 :研磨液供給槽 150 :研磨墊調節器 160 :化學液供給管路 170 :化學液供給槽 200 ·化學機械研磨裝置 210 :研磨盤 14 1293591 14386twf.doc/g 212 :研磨液出口 220 :研磨墊 230 ··研磨液供給管路 230a、280a :控制閥 240 :研磨液供給槽 250 :研磨墊調節器 260 :化學液供給管路 270 ··化學液供給槽 > 280 :分流管路1293591 14386twf.doc/g IX. Description of the invention: [Technical field to which the invention pertains] ^Alum has a chemical mechanical polishing (Ο·-1, ΓΓΓ1 P0lishing 'CMP) skirt, and especially related to a good A method of adjusting the polishing effect of a chemical mechanical polishing pad. [Prior Art] Faced with (the size of the film is reduced, the lithography exposure resolution needs to be relatively reduced with the exposure depth of field). For the high and low undulating rim of the wafer surface: the requirements of the second and second will be more stringent. Chemical mechanical polishing is a technology that can provide comprehensive planarization of the super (four) shell circuit process. In addition to flattening the surface profile of the wafer, it can also be connected to the horizontal metal wire via the metal grinding. The production of ts), the production of 巾 贱 隔 及 及 及 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进 先进The chemical surface polishing apparatus 100 according to the above description includes at least the polishing disc 110, the grinding liquid, the polishing liquid supply line (10), the polishing pad conditioner 15A, and the liquid supply line 16〇, etc. 1. The grinding disc 110 has a plurality of grinding fluid outlets 112 on the surface thereof, and the _ mat 120 is disposed on the grinding disc 11 and is mounted on the loading tray (not shown) to drive the grinding crucible 12 〇, and Matching the slurry to the crystal This light is a semiconductor fabrication process need to fully planarized towel ⑹ coffee Plantation) structure 'of a chemical mechanical polishing process. 1293591 14386twf.doc/g The slurry supply line 130 is connected to the bottom of the UG, and the grinding system is provided by the slurry supply tank 140, and is adapted to supply π 112 from the grinding liquid below the grinding disc 11 to the grinding.塾 120 on the surface. Since the slurry is: flurry) ‘If the concentration of the grinding is too high, the remaining of the drilled ship at the polishing outlet 112 will cause blockage of the slurry outlet 112. The partially clogged abrasive liquid outlet 112 will not continue to uniformly supply the polishing liquid to the polishing pad, so that the flatness of the mechanical polishing after the sounding or even the components may continue. Referring to FIG. 1, the polishing pad adjuster 150 is attached. Disposed on the polishing pad 12〇j' and the chemical liquid supply line 16 (H system is connected to the polishing 塾 adjuster 15 〇 ί=7G: / · from the chemical liquid supply tank 17_ chemical liquid supply, port b road 160, and the heart Supply to the polishing pad adjuster π. The surface of this day's t-polish 12G will adhere to the residue of the slurry, 1? / 矣 * ° week ^ 15G to adjust the polishing pad 12G, will be the second residue Removal. However, the adjustment action from the grinding 塾 adjuster 150 alone = 2 〇 其 adjustment of the grinding (four) [invention] is suitable for the purpose of providing - observation frequency device, its function Γ chemistry The mechanical grinding effect and the better adjustment of the polishing pad are suitable for ==== two mentions: - the adjustment method of the grinding abrasive, which is too (4) to make it have the secret chemical polishing effect. x - a chemical mechanical polishing device, at least - Grinding disc, a 1293591 14386twf.doc/g grinding crucible, - research ship supply tube , the grinding regulator, the chemical liquid confession I road and the - splitting pipeline, wherein the grinding disc has a Wei grinding opening on the surface, and the grinding raft is arranged on the grinding disc. The grinding liquid supply pipeline is connected to Grinding the bottom of the disc and being adapted to supply a polishing liquid from the polishing disc to the surface of the polishing pad via the slurry outlet. The polishing pad adjuster is disposed above the polishing pad, and the learning liquid supply line is connected to the polishing pad regulator And is suitable for supplying chemical liquid to the grinding pad to adjust the enthalpy. The wording line is connected between the research supply supply line and the chemical liquid supply official road, which is suitable for grinding the chemical secret supply line and grinding. The liquid outlet is supplied to the surface of the polishing pad. The nightingale, Όg According to the chemical mechanical research and development of the county, the above-mentioned = branching road is further equipped with "the first control valve" and on the slurry supply line Sigh a second control valve, wherein when the slurry is supplied to the polishing pad, = valve, (4) ' and the second control valve is opened. In addition, when the chemical liquid is supplied to the grinding crucible, the first control valve is opened, and the second The control valve is closed. A method for adjusting a polishing pad is proposed, which is suitable for the above-mentioned chemical machine and polishing device. This method is a fine mechanical polishing device for grinding a layer to be polished on a wafer, and then supplying the chemical liquid through the chemical liquid. The pipeline is supplied to the grinding crucible regulator, and the chemical liquid is supplied to the polishing pad via the branching pipe and the grinding supply path, and the material is misaligned (four) to grind the crucible surface. Further, in accordance with a preferred embodiment of the present invention The method for adjusting the polishing pad, wherein the layer to be polished comprises a metal layer. In the method for adjusting the polishing pad according to the preferred embodiment of the present invention, the metal layer comprises copper, and the polishing liquid comprises, for example, an acidic solution. The chemical liquid such as the package 1293591 14386 twf.doc/g includes an acidic solution, and the chemical liquid may be an oxalic acid-containing solution. According to a method of adjusting a polishing pad according to a preferred embodiment of the present invention, the metal layer comprises tungsten, and the polishing liquid comprises, for example, an acidic solution, and the chemical liquid is, for example, deionized water. According to a method of adjusting a polishing pad according to a preferred embodiment of the present invention, the metal layer comprises a nitride button, and the polishing liquid comprises, for example, an alkaline solution, and the chemical liquid is, for example, deionized water. / ^ The present invention uses a chemical liquid supply line that is bidirectionally transported from above and below the polishing pad, so that a chemical liquid can be supplied from below the polishing pad, in addition to blocking the residue of the polishing liquid at the outlet of the polishing liquid, thereby further researching ^The slurry in the process can be evenly distributed on the polishing pad to enhance the grinding effect. In addition, in the adjusting step of the polishing pad, the chemical liquid from above and below the polishing pad can make the chemical liquid more evenly distributed on the polishing pad, so that the polishing pad can obtain better adjustment effect, and further make the polishing pad follow-up In the chemical mechanical polishing process, it has a better grinding state. The above and other objects, features and advantages of the present invention will become more apparent from [Embodiment] The present invention is a chemical mechanical polishing apparatus in the preferred embodiment of the present invention, which is not intended. Referring to FIG. 2, the chemical mechanical polishing device 2 of the present invention, the polishing disk 210, the polishing pad 22, the polishing liquid supply line 23, the grinding pad, the circumferential state 250, and the chemical liquid supply line 260 and a split line 280. Referring to FIG. 2, the grinding disc 210 is disposed on a carrying machine (not shown) 1293591 14386twf.doc/g, and is rotated by the carrying machine (not shown) to drive the grinding disc 21〇, and the polishing pad 220 is rotated. It is disposed on the grinding disc 21〇, and the polishing pad 220 is simultaneously rotated along with the grinding disc 210 to remove the layer to be polished. 1 With continued reference to FIG. 2, the polishing disk 210 has a plurality of polishing liquid outlets 212 on its surface, and the polishing liquid supply line 230 is connected to the bottom of the polishing disk 21, and is adapted to pass from the polishing disk 210 through the slurry outlet 212. The slurry is supplied to the surface of the polishing crucible 220. In addition, the surface of the polishing pad 21 has a plurality of small holes φ holes (not shown), and the polishing liquid can continue to be transmitted through the holes in the surface of the polishing pad 210 to the polishing surface of the polishing pad 210 to match the polishing pad 21 〇 For grinding to be performed. Referring to FIG. 2, the polishing pad adjuster 25 is disposed above the polishing pad 22〇, and the chemical liquid supply line 260 is connected to the polishing pad adjuster 25〇, and is adapted to supply the chemical liquid to the polishing pad adjuster. 25 years old. The polishing pad adjuster 250 has, for example, a plurality of diamond brush heads that can contact the surface of the polishing pad 220 to remove the rough fluff of the surface of the polishing pad 220 and the residue of the polishing liquid adhered to the surface of the polishing pad 22, and cooperate with the chemical liquid and The polishing liquid adhering to the polishing pad 22〇φ is checked to cause a reaction, and the effect of removing the residue of the polishing liquid can be enhanced. Referring to FIG. 2, the branch line 280 is connected between the polishing liquid supply line 23 () and the chemical liquid supply line 260, and is adapted to pass the chemical liquid through the chemical liquid supply line 260, the polishing liquid supply line 230, and The slurry outlet 212 is supplied to the surface of the polishing crucible 220. In a preferred embodiment, the design of the splitter line 28 is such that the chemical liquid can also be passed through the split line 280 from the underside of the polishing pad 220 to the grind 1293591 14386 twf.doc/g pad 220 to The polishing pad 220 is adjusted. In particular, since the chemical liquid can also be supplied from below the polishing pad 220, when the chemical liquid passes through the polishing liquid outlet 212 of the polishing disk 21, the chemical liquid can also dissolve the polishing liquid residue accumulated in the polishing liquid outlet, and at the same time The effect of cleaning the slurry outlet M2 is achieved. Referring to Fig. 2, in an embodiment, a control valve 280a is further disposed on the branch line 280, and another control valve 230a is disposed on the slurry supply line 23'. Here, when the slurry is supplied to the polishing pad 22, the control valve 28 is closed, and the control valve 230a is opened. Further, when the chemical liquid is supplied to the polishing pad 22q, the control valve 280a is opened, and the control valve 23〇a is closed. The control valve 28〇a provided on the branch line 280 is for controlling the flow of the chemical liquid, and (4) the control valve 23〇& provided on the grinding liquid supply line 23 is used to control the flow of the slurry. In one embodiment, when the control room-opening control unit 230a is in the off state, at this time, the chemical liquid can be supplied from the chemical line 260 to the polishing pad conditioner 25, and the polishing pad is transferred from the polishing pad 22〇. In addition to 220, the chemical liquid may also be passed from the chemical liquid supply tank 27, in sequence, the line 280, the control valve 280a, the slurry supply line 23, and the grinding ==2=塾220 to the grinding crucible 220 for research. On the other hand, when the five control valve 280a is closed, and the control valve 23〇a is opened, the slurry can be supplied from the slurry supply tank 24 through the slurry to the factory 2 to reach the grinding contact. In order to carry out the subsequent chemical chemistry of the chemical mechanical polishing apparatus 2, the design can be carried out from above and below the polishing pad 22fl 1293591 14386 twf.doc/g. In the process of supplying the chemical liquid from below the grinding crucible 220, the grinding fluid can block the grinding particles at the outlet of the polishing liquid 212, so that the polishing liquid can be evenly distributed on the polishing pad 22 in the subsequent polishing process. On, to improve the grinding effect. Fig. 2 shows a method for adjusting the polishing pad 220 of the present invention, and the method for adjusting the polishing pad p is turned over to the above chemical mechanical polishing device. The method of adjusting is to chemically polish the layer to be polished (not shown) on a wafer (not shown), and then supply the chemical liquid to the official route through the chemical. The pad conditioner 25 () is simultaneously supplied with the chemical liquid to the polishing pad 220 via the branching path 280 and the slurry supply line 230, and the surface of the polishing pad 220 is adjusted by the polishing pad _$25G. Referring to FIG. 2, the method for adjusting the polishing pad 220 of the present embodiment includes, for example, the following steps. First, the chemical liquid is transferred from the chemical liquid supply tank 27 through the chemical liquid supply line 260 to the polishing pad conditioner 25 (), and then transferred from the polishing pad 22 to the polishing pad 22G. At the same time, the control valve 2 is applied to the open state, and the control valve 230\ is in the closed state, so the chemical liquid is again transmitted from the polishing pad 22 through the split line, the slurry supply line 230 and the slurry outlet 212. Up to the grinding crucible 220, since the control valve 23〇a is in the closed state, the polishing liquid is not transferred from the polishing liquid supply line 230 to the polishing pad 22〇. After that, continue to adjust the surface of the grinding pad adjuster 250, the polishing pad (four) ☆ 'For example, there are many diamond brush heads, which can contact the surface of the polishing pad 22 j and then transfer to the polishing pad 22 from above and below to the grinding The chemical liquid on the crucible 22 is further removed by the liquid residue adhering to the polishing pad 22 and the unevenness of the polishing crucible 220. If so, the polishing pad 1293591 14386twf.doc/g 220 can be maintained at an appropriate roughness (r〇Ughness), and the polishing pad 220 can adsorb sufficient polishing liquid in the subsequent chemical mechanical polishing process. In order to maintain a higher, more stable polishing rate. Continuing to refer to FIG. 2, in the above adjustment step, in particular, the chemical liquid can be transferred from the underside of the polishing pad 220 to the design of the polishing crucible 220, so that the chemical liquid can be chemically oxidized with the polishing liquid residue of the blocking base at the polishing liquid outlet 212. The reaction is facilitated to remove the slurry residue trapped at the slurry outlet 212. In other words, the slurry outlet 212 can be kept unblocked, thereby allowing the slurry to be evenly distributed on the polishing pad 220, thereby improving the polishing performance of the overall chemical mechanical polishing device 2, and also extending the service life of the polishing disk 210. effect. In addition, the above-mentioned layer to be polished is, for example, a metal layer, and in a preferred embodiment, when the metal layer is, for example, copper metal, the corresponding polishing liquid is, for example, an acidic solution, and the chemical liquid used is, for example, an acidic solution. And the chemical liquid may be an oxalic acid-containing solution. In another embodiment, when the metal layer is, for example, tungsten, the corresponding polishing liquid is, for example, an acidic solution, and the chemical liquid used is, for example, deionized water. Further, in still another embodiment, when the metal layer is, for example, a nitride button, the corresponding polishing liquid used is, for example, an experimental solution, and the chemical liquid used is, for example, deionized water. In summary, the chemical mechanical polishing apparatus and the polishing pad adjusting method of the present invention have the following advantages: (1) The chemical mechanical polishing apparatus of the present invention has a design of a flow dividing line 'When adjusting the polishing pad, the chemical The liquid can pass through the slurry outlet to remove the slurry residue that is blocked at the outlet of the slurry, thereby providing a good grinding effect in the subsequent grinding process. 13 1293591 14386twf.doc/g (2) The chemical mechanical polishing apparatus of the present invention can be used for two-way transmission of wind to obtain a better adjustment effect when the polishing pad is adjusted. (3) The chemical machine grinding device of the hairdressing machine is not blocked by the father at the outlet of the polishing liquid. _The grinding gambling has a long service life. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and it is to be understood that those skilled in the art can make some modifications and resilience without departing from the scope of the invention. The warranty of the present invention is defined by the scope of the patent application attached to the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a conventional chemical mechanical polishing apparatus. 2 is a schematic view of a chemical mechanical gastric device according to a preferred embodiment of the present invention. [Explanation of main component symbols] % 100: Conventional chemical mechanical polishing apparatus 110: grinding disc 112: polishing liquid outlet _120: polishing pad 130: polishing liquid supply line 140: polishing liquid supply tank 150: polishing pad conditioner 160 : chemical liquid supply line 170 : chemical liquid supply tank 200 · chemical mechanical polishing apparatus 210 : grinding disc 14 1293591 14386twf.doc / g 212 : polishing liquid outlet 220 : polishing pad 230 · · polishing liquid supply line 230a, 280a: Control valve 240: polishing liquid supply tank 250: polishing pad conditioner 260: chemical liquid supply line 270 · chemical liquid supply tank > 280: split flow line
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