JP2006261681A5 - - Google Patents
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- JP2006261681A5 JP2006261681A5 JP2006075342A JP2006075342A JP2006261681A5 JP 2006261681 A5 JP2006261681 A5 JP 2006261681A5 JP 2006075342 A JP2006075342 A JP 2006075342A JP 2006075342 A JP2006075342 A JP 2006075342A JP 2006261681 A5 JP2006261681 A5 JP 2006261681A5
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- JP
- Japan
- Prior art keywords
- substrate
- polysilicon
- thin film
- film transistor
- cleaned
- Prior art date
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Claims (10)
前記ポリシリコン結晶粒の間の結晶粒界から突出している結晶粒を化学的機械的研磨に
よって除去して研磨された基板を形成する段階と、
前記研磨された基板を洗浄して洗浄された基板を形成する段階と、
前記洗浄された基板をアンローディングする段階とを有することを特徴とするポリシリ
コン薄膜トランジスタ基板の製造方法。 Loading a substrate on which polysilicon grains are formed;
Removing the crystal grains protruding from the grain boundaries between the polysilicon crystal grains by chemical mechanical polishing to form a polished substrate;
Cleaning the polished substrate to form a cleaned substrate;
And unloading the cleaned substrate. A method of manufacturing a polysilicon thin film transistor substrate.
パッドの表面に密着させた状態で前記研磨パッドを回転させる同時に前記基板と前記研磨
パッドとの間にスラリーを供給する段階を含み、
前記スラリーの研磨材は、アルミナ、シリカ、又はセリア（ＣｅＯ ２ ）である、
ことを特徴とする請求項１に記載のポリシリコン薄膜トランジスタ基板の製造方法。 The step of forming the polished substrate by removing the polysilicon crystal grains is performed by rotating the polishing pad while the substrate is in close contact with the surface of the polishing pad, and at the same time, slurry between the substrate and the polishing pad. viewing including the step of providing the,
The slurry abrasive is alumina, silica, or ceria (CeO 2 ).
The method of manufacturing a polysilicon thin film transistor substrate according to claim 1.
載のポリシリコン薄膜トランジスタ基板の製造方法。 3. The method of manufacturing a polysilicon thin film transistor substrate according to claim 2 , wherein the abrasive has a particle size range of 50 nm to 200 nm.
ール洗浄又は超純水洗浄の少なくともいずれか一つで実施されることを特徴とする請求項
１に記載のポリシリコン薄膜トランジスタ基板の製造方法。 The polysilicon thin film transistor according to claim 1, wherein the step of forming the cleaned substrate is performed by at least one of brush cleaning, ultrasonic cleaning, isopropyl alcohol cleaning, and ultrapure water cleaning. A method for manufacturing a substrate.
前記洗浄された基板をアンローディングする段階後に、前記ポリシリコン層をパターニ
ングして前記ポリシリコン薄膜トランジスタ基板の半導体層を形成する段階をさらに有す
ることを特徴とする請求項１に記載のポリシリコン薄膜トランジスタ基板の製造方法。 The polysilicon crystal grain is formed of a polysilicon layer on the substrate,
The polysilicon thin film transistor substrate of claim 1, further comprising a step of patterning the polysilicon layer to form a semiconductor layer of the polysilicon thin film transistor substrate after unloading the cleaned substrate. Manufacturing method.
前記ポリシリコン結晶粒の間の結晶粒界から突出している結晶粒を化学的機械的研磨に
よって除去して研磨された基板を形成する段階と、
前記研磨された基板を洗浄して洗浄された基板を形成する段階と、
前記洗浄された基板をアンローディングする段階とを有する方法によって製造されたポ
リシリコン薄膜トランジスタ基板より成ることを特徴とする液晶表示装置。 Loading a substrate on which polysilicon grains are formed;
Removing the crystal grains protruding from the grain boundaries between the polysilicon crystal grains by chemical mechanical polishing to form a polished substrate;
Cleaning the polished substrate to form a cleaned substrate;
And a polysilicon thin film transistor substrate manufactured by a method including unloading the cleaned substrate.
パッドの表面に密着させた状態で前記研磨パッドを回転させる同時に前記基板と前記研磨
パッドとの間にスラリーを供給する段階を含むことを特徴とする請求項６に記載の液晶
表示装置。 The step of forming the polished substrate by removing the polysilicon crystal grains is performed by rotating the polishing pad while the substrate is in close contact with the surface of the polishing pad, and at the same time, slurry between the substrate and the polishing pad. The liquid crystal display device according to claim 6 , further comprising a step of supplying the liquid crystal.
前記洗浄された基板をアンローディングする段階後に、前記ポリシリコン層をパターニ
ングして前記ポリシリコン薄膜トランジスタ基板の半導体層を形成する段階をさらに有す
ることを特徴とする請求項６に記載の液晶表示装置。 The polysilicon crystal grain is formed of a polysilicon layer on the substrate,
The liquid crystal display device of claim 6 , further comprising a step of patterning the polysilicon layer to form a semiconductor layer of the polysilicon thin film transistor substrate after unloading the cleaned substrate.
ン層は、前記突出している結晶粒を除去する間に実質的に平坦化されることを特徴とする
請求項６に記載の液晶表示装置。 The polysilicon crystal grain is formed of a polysilicon layer on the substrate, and the polysilicon layer is substantially planarized while removing the protruding crystal grain.
The liquid crystal display device according to claim 6 .
前記基板上に形成されるポリシリコン層よりパターニングされて前記基板上に形成され
る半導体層とを有し、
前記ポリシリコン層は、突出しているポリシリコン結晶粒が除去されるように化学的機
械的研磨によって平坦化されることを特徴とする液晶表示装置。 A substrate,
A semiconductor layer formed on the substrate by patterning from a polysilicon layer formed on the substrate;
The liquid crystal display device according to claim 1, wherein the polysilicon layer is planarized by chemical mechanical polishing such that protruding polysilicon crystal grains are removed.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050022276A KR20060100602A (en) | 2005-03-17 | 2005-03-17 | Method for fabricating poly silicon thin film transistor and liquid crystal display comprising poly silicon thin film transistor fabricated by the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006261681A JP2006261681A (en) | 2006-09-28 |
| JP2006261681A5 true JP2006261681A5 (en) | 2009-04-30 |
Family
ID=37010903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006075342A Pending JP2006261681A (en) | 2005-03-17 | 2006-03-17 | Method for manufacturing polysilicon thin film transistor substrate and liquid crystal display |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20060211181A1 (en) |
| JP (1) | JP2006261681A (en) |
| KR (1) | KR20060100602A (en) |
| TW (1) | TW200703658A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101386271B1 (en) | 2010-12-10 | 2014-04-18 | 데이진 가부시키가이샤 | Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device |
| CN102800574A (en) * | 2011-05-26 | 2012-11-28 | 中国科学院微电子研究所 | Method for manufacturing polysilicon grid |
| JP5818972B2 (en) | 2012-03-30 | 2015-11-18 | 帝人株式会社 | Semiconductor laminated body and method for manufacturing the same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer |
| KR102313563B1 (en) * | 2014-12-22 | 2021-10-18 | 주식회사 케이씨텍 | Chemical mechanical polishing system capable of diverse polishing processes |
| KR102333209B1 (en) | 2015-04-28 | 2021-12-01 | 삼성디스플레이 주식회사 | Substrate polishing apparatus |
| KR102509260B1 (en) * | 2015-11-20 | 2023-03-14 | 삼성디스플레이 주식회사 | Polishing slurry for silicon, method of polishing polysilicon and method of manufacturing a thin film transistor substrate |
| KR102559647B1 (en) | 2016-08-12 | 2023-07-25 | 삼성디스플레이 주식회사 | Substrate polishing system and substrate polishing method |
| KR102647695B1 (en) | 2016-08-12 | 2024-03-14 | 삼성디스플레이 주식회사 | Transistor array panel and manufactuing method thereof |
| KR102322767B1 (en) | 2017-03-10 | 2021-11-08 | 삼성디스플레이 주식회사 | Substrate treating apparatus providing improved detaching mechanism between the substrate and stage and the substrate treating method using the same |
| KR102420327B1 (en) | 2017-06-13 | 2022-07-14 | 삼성디스플레이 주식회사 | Thin film transistor array substrate and display device using the same, and method for manufacturing the same |
| KR102426624B1 (en) | 2017-11-23 | 2022-07-28 | 삼성디스플레이 주식회사 | Display device and manufacturing method of the same |
| JP7106209B2 (en) * | 2018-04-05 | 2022-07-26 | 株式会社ディスコ | SiC substrate polishing method |
| KR20210116775A (en) * | 2020-03-13 | 2021-09-28 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10200120A (en) * | 1997-01-10 | 1998-07-31 | Sharp Corp | Manufacture of semiconductor device |
| JP2000040828A (en) * | 1998-07-24 | 2000-02-08 | Toshiba Corp | Production method of thin film transistor |
| JP2000218512A (en) * | 1999-01-28 | 2000-08-08 | Osaka Diamond Ind Co Ltd | Cmp pad conditioner and manufacture thereof |
| JP2000246650A (en) * | 1999-02-25 | 2000-09-12 | Mitsubishi Materials Corp | Corrosion resistant grinding wheel |
| US6431959B1 (en) * | 1999-12-20 | 2002-08-13 | Lam Research Corporation | System and method of defect optimization for chemical mechanical planarization of polysilicon |
| JP2001345293A (en) * | 2000-05-31 | 2001-12-14 | Ebara Corp | Method and apparatus for chemical mechanical polishing |
| JP2002151410A (en) * | 2000-08-22 | 2002-05-24 | Sony Corp | Method of manufacturing crystalline semiconductor material and semiconductor device |
| US6686978B2 (en) * | 2001-02-28 | 2004-02-03 | Sharp Laboratories Of America, Inc. | Method of forming an LCD with predominantly <100> polycrystalline silicon regions |
| JP2003109918A (en) * | 2001-09-28 | 2003-04-11 | Internatl Business Mach Corp <Ibm> | Device and method for smoothing wafer for bonding by chemical mechanical polishing (cmp) |
| KR100753568B1 (en) * | 2003-06-30 | 2007-08-30 | 엘지.필립스 엘시디 주식회사 | Method of crystallization amorphous semiconductor layer and method of fabricating liquid crystal display device using the same |
| US7189649B2 (en) * | 2004-08-20 | 2007-03-13 | United Microelectronics Corp. | Method of forming a material film |
-
2005
- 2005-03-17 KR KR1020050022276A patent/KR20060100602A/en not_active Application Discontinuation
-
2006
- 2006-03-16 TW TW095108970A patent/TW200703658A/en unknown
- 2006-03-17 JP JP2006075342A patent/JP2006261681A/en active Pending
- 2006-03-17 US US11/378,861 patent/US20060211181A1/en not_active Abandoned
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