SG115586A1 - Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same - Google Patents

Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same

Info

Publication number
SG115586A1
SG115586A1 SG200306808A SG200306808A SG115586A1 SG 115586 A1 SG115586 A1 SG 115586A1 SG 200306808 A SG200306808 A SG 200306808A SG 200306808 A SG200306808 A SG 200306808A SG 115586 A1 SG115586 A1 SG 115586A1
Authority
SG
Singapore
Prior art keywords
resin composition
same
epoxy resin
semiconductor
semiconductor device
Prior art date
Application number
SG200306808A
Other languages
English (en)
Inventor
Akizuki Shinya
Ikemura Kazuhiro
Ito Hisataka
Uchida Takahiro
Eto Takuya
Nishioka Tsutomu
Shimada Katsumi
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002328726A external-priority patent/JP3822556B2/ja
Priority claimed from JP2002339798A external-priority patent/JP3876217B2/ja
Priority claimed from JP2002339797A external-priority patent/JP3876216B2/ja
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of SG115586A1 publication Critical patent/SG115586A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
SG200306808A 2002-11-12 2003-11-07 Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same SG115586A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002328726A JP3822556B2 (ja) 2002-11-12 2002-11-12 半導体装置
JP2002339798A JP3876217B2 (ja) 2002-11-22 2002-11-22 半導体封止用エポキシ樹脂組成物の製法
JP2002339797A JP3876216B2 (ja) 2002-11-22 2002-11-22 半導体封止用エポキシ樹脂組成物の製法

Publications (1)

Publication Number Publication Date
SG115586A1 true SG115586A1 (en) 2005-10-28

Family

ID=32180313

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200306808A SG115586A1 (en) 2002-11-12 2003-11-07 Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same

Country Status (8)

Country Link
US (1) US7265167B2 (zh)
EP (1) EP1420035B1 (zh)
KR (1) KR100676002B1 (zh)
CN (1) CN1315184C (zh)
DE (1) DE60314218T2 (zh)
MY (1) MY135619A (zh)
SG (1) SG115586A1 (zh)
TW (1) TWI259503B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073600A (ja) * 2004-08-31 2006-03-16 Renesas Technology Corp 半導体装置およびその製造方法
JP4383324B2 (ja) * 2004-11-10 2009-12-16 Ｎｅｃエレクトロニクス株式会社 半導体装置
WO2010067719A1 (ja) * 2008-12-12 2010-06-17 日本ライフライン株式会社 心腔内除細動カテーテル
KR101041774B1 (ko) * 2009-09-18 2011-06-17 원정희 공기조화시스템의 공조용 여과필터
JP2013023661A (ja) * 2011-07-25 2013-02-04 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
CN104277420B (zh) * 2014-09-18 2017-08-22 华侨大学 一种聚合物结构复合材料及其制备方法
KR102582382B1 (ko) * 2017-06-09 2023-09-25 나가세케무텍쿠스가부시키가이샤 에폭시 수지 조성물, 전자 부품 실장 구조체 및 그 제조 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138740A (ja) * 1982-02-15 1983-08-17 Denki Kagaku Kogyo Kk 樹脂組成物
JPS59179539A (ja) * 1983-03-29 1984-10-12 Denki Kagaku Kogyo Kk 樹脂用充填剤
JPS60115641A (ja) * 1983-11-25 1985-06-22 Denki Kagaku Kogyo Kk 封止樹脂用充填剤及びその組成物
JPS60210643A (ja) * 1983-11-30 1985-10-23 Denki Kagaku Kogyo Kk 充填剤及びその組成物
JPS6140811A (ja) 1984-07-31 1986-02-27 Nippon Chem Ind Co Ltd:The 溶融用水和シリカおよびこれを用いた溶融シリカの製造方法
US4816299A (en) * 1987-05-20 1989-03-28 Corning Glass Works Encapsulating compositions containing ultra-pure, fused-silica fillers
JPH0196008A (ja) 1987-10-07 1989-04-14 Nippon Chem Ind Co Ltd 溶融球状シリカ及びその製造方法
JP2704281B2 (ja) 1988-11-25 1998-01-26 日本化学工業株式会社 溶融球状シリカ及びこれをフィラーとする封止用樹脂組成物
JPH02158637A (ja) 1988-12-09 1990-06-19 Nippon Chem Ind Co Ltd シリカフィラーおよびこれを用いた封止用樹脂組成物
JP2665539B2 (ja) 1989-02-27 1997-10-22 日本化学工業株式会社 シリカフィラーおよびこれを用いた封止用樹脂組成物
JPH0362844A (ja) * 1989-02-27 1991-03-18 Shin Etsu Chem Co Ltd 半導体封止用エポキシ樹脂組成物及び半導体装置
US5028407A (en) * 1990-01-25 1991-07-02 International Minerals & Chemical Corp. Method of production of high purity fusible silica
JP2510928B2 (ja) * 1992-05-27 1996-06-26 日本アエロジル株式会社 高純度シリカビ―ズの製造方法
DE69629111T2 (de) * 1995-04-28 2004-04-22 Mitsubishi Chemical Corp. Verfahren zur herstellung eines synthetischen quarzpulvers und geformtem quarzglas
KR100206880B1 (ko) 1995-12-29 1999-07-01 구본준 히트싱크가 부착된 컬럼형 패키지
JP2948184B2 (ja) 1998-01-05 1999-09-13 大塚化学株式会社 Ｃｖケーブル用プレハブ型接続箱
JPH11343392A (ja) 1998-06-02 1999-12-14 Hitachi Chem Co Ltd テープキャリアパッケージ用エポキシ樹脂組成物
CN1113083C (zh) * 1998-06-09 2003-07-02 日东电工株式会社 半导体封装用环氧树脂组合物及使用了该组合物的半导体器件
JP4089019B2 (ja) 1998-06-22 2008-05-21 旭硝子株式会社 多孔質石英ガラス母材合成用多重管バーナ
JP2000230039A (ja) * 1998-12-08 2000-08-22 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP2001192499A (ja) 2000-01-14 2001-07-17 Otsuka Chem Co Ltd 導電性樹脂組成物
JP2001354838A (ja) 2000-06-14 2001-12-25 Shin Etsu Chem Co Ltd 半導体封止用エポキシ樹脂組成物及び半導体装置並びに評価方法
JP3876217B2 (ja) 2002-11-22 2007-01-31 日東電工株式会社 半導体封止用エポキシ樹脂組成物の製法

Also Published As

Publication number Publication date
EP1420035B1 (en) 2007-06-06
KR100676002B1 (ko) 2007-01-29
EP1420035A1 (en) 2004-05-19
MY135619A (en) 2008-05-30
US20040097632A1 (en) 2004-05-20
CN1315184C (zh) 2007-05-09
DE60314218D1 (de) 2007-07-19
CN1499618A (zh) 2004-05-26
DE60314218T2 (de) 2007-09-27
TW200415683A (en) 2004-08-16
KR20040044337A (ko) 2004-05-28
TWI259503B (en) 2006-08-01
US7265167B2 (en) 2007-09-04

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