SG112868A1 - Electric circuit - Google Patents

Electric circuit

Info

Publication number
SG112868A1
SG112868A1 SG200207890A SG200207890A SG112868A1 SG 112868 A1 SG112868 A1 SG 112868A1 SG 200207890 A SG200207890 A SG 200207890A SG 200207890 A SG200207890 A SG 200207890A SG 112868 A1 SG112868 A1 SG 112868A1
Authority
SG
Singapore
Prior art keywords
electric circuit
electric
circuit
Prior art date
Application number
SG200207890A
Other languages
English (en)
Inventor
Kimura Hajime
Watanabe Yasuko
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG112868A1 publication Critical patent/SG112868A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/028—Current mode circuits, e.g. switched current memories
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Thin Film Transistor (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG200207890A 2002-01-17 2002-12-31 Electric circuit SG112868A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002009221 2002-01-17
JP2002305552A JP2003283271A (ja) 2002-01-17 2002-10-21 電気回路

Publications (1)

Publication Number Publication Date
SG112868A1 true SG112868A1 (en) 2005-07-28

Family

ID=26625559

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200207890A SG112868A1 (en) 2002-01-17 2002-12-31 Electric circuit

Country Status (7)

Country Link
US (6) US7123250B2 (zh)
EP (2) EP2259268A3 (zh)
JP (1) JP2003283271A (zh)
KR (2) KR100975826B1 (zh)
CN (1) CN100377494C (zh)
SG (1) SG112868A1 (zh)
TW (1) TWI256537B (zh)

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TWI310632B (en) * 2002-01-17 2009-06-01 Semiconductor Energy Lab Electric circuit
US6958651B2 (en) 2002-12-03 2005-10-25 Semiconductor Energy Laboratory Co., Ltd. Analog circuit and display device using the same
JP4009214B2 (ja) * 2003-03-14 2007-11-14 松下電器産業株式会社 電流駆動装置
US7081774B2 (en) * 2003-07-30 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Circuit having source follower and semiconductor device having the circuit
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JP2005266365A (ja) * 2004-03-18 2005-09-29 Semiconductor Energy Lab Co Ltd ソースフォロワ回路及びその駆動方法、ボルテージフォロワ回路、表示装置
KR101238756B1 (ko) * 2004-11-24 2013-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 발광 장치를 포함하는 전자 기기, 및 발광 장치의 구동 방법
TW200641774A (en) * 2005-04-28 2006-12-01 Sanyo Electric Co Electroluminescense display device and data line driving circuit
US8847861B2 (en) * 2005-05-20 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device, method for driving the same, and electronic device
JP4293162B2 (ja) * 2005-05-24 2009-07-08 セイコーエプソン株式会社 演算増幅器
WO2008057524A1 (en) * 2006-11-10 2008-05-15 Skyworks Solutions, Inc. Compact low loss high frequency switch with improved linearity performance
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US8552948B2 (en) 2007-04-05 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Display device comprising threshold control circuit
JP5042077B2 (ja) * 2007-04-06 2012-10-03 株式会社半導体エネルギー研究所 表示装置
US7804328B2 (en) * 2008-06-23 2010-09-28 Texas Instruments Incorporated Source/emitter follower buffer driving a switching load and having improved linearity
US8436660B2 (en) * 2010-08-27 2013-05-07 Mosys, Inc. Voltage-mode driver with equalization
US8681945B2 (en) * 2011-12-22 2014-03-25 Telefonaktiebolaget Lm Ericsson (Publ) Calibration of a line driving device
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
DE102012221345A1 (de) 2012-11-22 2014-05-22 Senvion Se Verfahren zum Betreiben einer Windenergieanlage und Windenergieanlage
US9520872B2 (en) * 2014-12-23 2016-12-13 Qualcomm Incorporated Linear equalizer with variable gain
US9715941B2 (en) * 2015-10-30 2017-07-25 Sony Semiconductor Solutions Corporation State machine controlled MOS linear resistor
CN112041776B (zh) 2018-01-24 2022-06-07 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
CN110021259B (zh) * 2018-03-23 2020-12-22 京东方科技集团股份有限公司 电源电压提供电路、方法、显示基板和显示装置
KR20210153395A (ko) * 2020-06-10 2021-12-17 엘지디스플레이 주식회사 발광 표시 장치 및 그의 열화 센싱 방법
US11689201B2 (en) 2021-07-26 2023-06-27 Qualcomm Incorporated Universal serial bus (USB) host data switch with integrated equalizer

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TWI310632B (en) * 2002-01-17 2009-06-01 Semiconductor Energy Lab Electric circuit
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EP0274784B1 (en) * 1986-12-11 1991-09-25 Koninklijke Philips Electronics N.V. Filter arrangement
US5099205A (en) * 1990-11-29 1992-03-24 Brooktree Corporation Balanced cascode current mirror

Also Published As

Publication number Publication date
KR20030063141A (ko) 2003-07-28
KR20100031596A (ko) 2010-03-23
EP2259268A2 (en) 2010-12-08
EP1330022A3 (en) 2006-05-10
KR101021576B1 (ko) 2011-03-17
US7123250B2 (en) 2006-10-17
EP2259268A3 (en) 2013-01-16
EP1330022B1 (en) 2014-04-16
US20100164599A1 (en) 2010-07-01
TW200302410A (en) 2003-08-01
CN100377494C (zh) 2008-03-26
US20060290692A1 (en) 2006-12-28
US8149043B2 (en) 2012-04-03
KR100975826B1 (ko) 2010-08-13
US7710166B2 (en) 2010-05-04
US8928362B2 (en) 2015-01-06
TWI256537B (en) 2006-06-11
US20140152387A1 (en) 2014-06-05
JP2003283271A (ja) 2003-10-03
US8253446B2 (en) 2012-08-28
EP1330022A2 (en) 2003-07-23
US20030132930A1 (en) 2003-07-17
CN1433144A (zh) 2003-07-30
US8669791B2 (en) 2014-03-11
US20120139440A1 (en) 2012-06-07
US20120306838A1 (en) 2012-12-06

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