SG11202105555VA - Pattern forming method, photosensitive resin composition, cured film, laminate, and device - Google Patents

Pattern forming method, photosensitive resin composition, cured film, laminate, and device

Info

Publication number
SG11202105555VA
SG11202105555VA SG11202105555VA SG11202105555VA SG11202105555VA SG 11202105555V A SG11202105555V A SG 11202105555VA SG 11202105555V A SG11202105555V A SG 11202105555VA SG 11202105555V A SG11202105555V A SG 11202105555VA SG 11202105555V A SG11202105555V A SG 11202105555VA
Authority
SG
Singapore
Prior art keywords
laminate
resin composition
forming method
photosensitive resin
pattern forming
Prior art date
Application number
SG11202105555VA
Other languages
English (en)
Inventor
Kenta Yamazaki
Toshihide Aoshima
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of SG11202105555VA publication Critical patent/SG11202105555VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
    • H01L2224/21—Structure, shape, material or disposition of high density interconnect preforms of an individual HDI interconnect
    • H01L2224/214—Connecting portions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
    • H01L2224/21—Structure, shape, material or disposition of high density interconnect preforms of an individual HDI interconnect
    • H01L2224/215—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/07—Polyamine or polyimide
    • H01L2924/07025—Polyimide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
SG11202105555VA 2018-12-05 2019-11-26 Pattern forming method, photosensitive resin composition, cured film, laminate, and device SG11202105555VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018228556 2018-12-05
PCT/JP2019/046157 WO2020116238A1 (ja) 2018-12-05 2019-11-26 パターン形成方法、感光性樹脂組成物、硬化膜、積層体、及び、デバイス

Publications (1)

Publication Number Publication Date
SG11202105555VA true SG11202105555VA (en) 2021-06-29

Family

ID=70975386

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105555VA SG11202105555VA (en) 2018-12-05 2019-11-26 Pattern forming method, photosensitive resin composition, cured film, laminate, and device

Country Status (9)

Country Link
US (1) US20210302836A1 (de)
EP (1) EP3893054A4 (de)
JP (1) JP7261818B2 (de)
KR (1) KR102636334B1 (de)
CN (1) CN113168093B (de)
PH (1) PH12021551275A1 (de)
SG (1) SG11202105555VA (de)
TW (1) TWI837236B (de)
WO (1) WO2020116238A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230146034A (ko) * 2021-02-17 2023-10-18 샌트랄 글래스 컴퍼니 리미티드 감광성 수지 조성물, 경화물, 함불소 수지 경화막 및 디스플레이
EP4398289A1 (de) 2021-08-31 2024-07-10 FUJIFILM Corporation Verfahren zur herstellung eines gehärteten produkts, laminatherstellungsverfahren, halbleiterbauelementherstellungsverfahren und verarbeitungsflüssigkeit
JP2023165095A (ja) * 2022-05-02 2023-11-15 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、層間絶縁膜、表面保護膜、及び電子部品

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK125218B (da) 1967-11-09 1973-01-15 Kalle Ag Lysfølsomt optegnelsesmateriale og lysfølsom blanding til anvendelse ved fremstilling af materialet.
DE2033769B2 (de) 1969-07-11 1980-02-21 Ppg Industries, Inc., Pittsburgh, Pa. (V.St.A.) Bis-<2-acryloxyäthyl)hexahydrophthalat enthaltende Gemische und Herstellungsverfahren
JPS4841708B1 (de) 1970-01-13 1973-12-07
GB1339911A (en) * 1970-02-26 1973-12-05 Ici Ltd Rubber-polyester compositions
JPS506034B1 (de) 1970-08-11 1975-03-10
DE2064079C2 (de) 1970-12-28 1982-09-09 Hoechst Ag, 6000 Frankfurt Photopolymerisierbares Gemisch
JPS5324989B2 (de) 1971-12-09 1978-07-24
JPS5230490B2 (de) 1972-03-21 1977-08-09
DE2361041C3 (de) 1973-12-07 1980-08-14 Hoechst Ag, 6000 Frankfurt Photopolymerisierbares Gemisch
JPS5311314B2 (de) 1974-09-25 1978-04-20
DE2822190A1 (de) 1978-05-20 1979-11-22 Hoechst Ag Photopolymerisierbares gemisch
DE2822189A1 (de) 1978-05-20 1980-04-17 Hoechst Ag Photopolymerisierbares gemisch
DE2952697A1 (de) 1979-12-29 1981-07-02 Hoechst Ag, 6230 Frankfurt Durch strahlung polymerisierbares gemisch und damit hergestelltes strahlungsempfindliches kopiermaterial
DE2952698A1 (de) 1979-12-29 1981-07-02 Hoechst Ag, 6230 Frankfurt Photopolymerisierbares gemisch und damit hergestelltes photopolymerisierbares kopiermaterial
US4258263A (en) * 1979-12-31 1981-03-24 Polaroid Corporation Cassette for large format film unit
DE3036694A1 (de) 1980-09-29 1982-06-03 Hoechst Ag, 6000 Frankfurt Gummielastische, ethylenisch ungesaettigte polyurethane und dieselben enthaltendes durch strahlung polymerisierbares gemisch
DE3048502A1 (de) 1980-12-22 1982-07-22 Hoechst Ag, 6000 Frankfurt Durch strahlung polymerisierbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3421511A1 (de) 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Polymerisierbare, perfluoralkylgruppen aufweisende verbindungen, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
DE3710281A1 (de) 1987-03-28 1988-10-06 Hoechst Ag Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial
DE3710282A1 (de) 1987-03-28 1988-10-13 Hoechst Ag Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial
DE3710279A1 (de) 1987-03-28 1988-10-06 Hoechst Ag Polymerisierbare verbindungen und diese enthaltendes durch strahlung polymerisierbares gemisch
DE3817424A1 (de) 1988-05-21 1989-11-23 Hoechst Ag Alkenylphosphon- und -phosphinsaeureester, verfahren zu ihrer herstellung und durch strahlung polymerisierbares gemisch, das diese verbindungen enthaelt
JPH1062986A (ja) 1996-08-21 1998-03-06 Fuji Photo Film Co Ltd 感放射線性着色組成物
TW452575B (en) 1996-12-06 2001-09-01 Ciba Sc Holding Ag New Α-aminoacetophenone photoinitiators and photopolymerizable compositions comprising these photoinitiators
US6441487B2 (en) 1997-10-20 2002-08-27 Flip Chip Technologies, L.L.C. Chip scale package using large ductile solder balls
SG77689A1 (en) 1998-06-26 2001-01-16 Ciba Sc Holding Ag New o-acyloxime photoinitiators
NL1016815C2 (nl) 1999-12-15 2002-05-14 Ciba Sc Holding Ag Oximester-fotoinitiatoren.
DE60234095D1 (de) 2001-06-11 2009-12-03 Basf Se Oxim ester photoinitiatoren mit kombinierter struktur
JP4225898B2 (ja) 2001-08-21 2009-02-18 チバ ホールディング インコーポレーテッド 深色モノ−及びビス−アシルホスフィンオキシド及びスルフィド並びに光開始剤としてのこれらの使用
JP4174275B2 (ja) 2002-09-09 2008-10-29 住友ベークライト株式会社 感光性有機無機複合材料およびそれを用いた半導体装置
JP3972246B2 (ja) 2003-01-07 2007-09-05 ソニー株式会社 ウエハーレベル・チップサイズ・パッケージおよびその製造方法
US7449573B2 (en) * 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
JP4502784B2 (ja) 2004-06-07 2010-07-14 富士フイルム株式会社 カラーフィルター、カラーフィルターの製造方法、及び液晶表示装置
JP4841816B2 (ja) 2004-08-03 2011-12-21 富士フイルム株式会社 遮光膜付基板、及び該遮光膜付基板を用いたエレクトロルミネッセンス表示装置
JP4428337B2 (ja) 2005-12-02 2010-03-10 ソニー株式会社 半導体装置の製造方法
KR100655045B1 (ko) 2005-12-30 2006-12-06 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 블랙 매트릭스
JP5354863B2 (ja) 2006-02-24 2013-11-27 富士フイルム株式会社 オキシム誘導体、光重合性組成物、カラーフィルタおよびその製造方法
JP4736864B2 (ja) * 2006-03-03 2011-07-27 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性ポリアミドイミド樹脂組成物、パターンの製造方法及び電子部品
JP2008063554A (ja) 2006-08-11 2008-03-21 Fujifilm Corp 分解性樹脂組成物、パターン形成材料およびパターン形成方法
US8197994B2 (en) 2006-09-27 2012-06-12 Fujifilm Corporation Compound or its tautomer, metal complex compound, colored photosensitive curing composition, color filter, and production
JP5496482B2 (ja) 2007-08-27 2014-05-21 富士フイルム株式会社 新規化合物、光重合性組成物、カラーフィルタ用光重合性組成物、カラーフィルタ、及びその製造方法、固体撮像素子、並びに、平版印刷版原版
JP2009191179A (ja) 2008-02-15 2009-08-27 Toyo Ink Mfg Co Ltd 光重合開始剤、重合性組成物、および重合物の製造方法。
JP4911116B2 (ja) 2008-05-22 2012-04-04 日立化成デュポンマイクロシステムズ株式会社 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品
JP5546801B2 (ja) 2008-06-10 2014-07-09 富士フイルム株式会社 紫外光レーザー露光用感光性樹脂組成物、パターン形成方法、その方法を用いて製造したカラーフィルタ、カラーフィルタの製造方法および液晶表示装置
JP2010078820A (ja) * 2008-09-25 2010-04-08 Fujifilm Corp 感光性フィルムの製造方法、感光性フィルム、感光性積層体、永久パターン形成方法、及びプリント基板
JP5293120B2 (ja) 2008-11-28 2013-09-18 住友化学株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP5451048B2 (ja) * 2008-12-05 2014-03-26 株式会社ダイセル 共重合体及び感光性樹脂組成物
JP5618118B2 (ja) 2009-01-09 2014-11-05 日立化成株式会社 感光性樹脂組成物，並びにこれを用いた感光性エレメント，ソルダーレジスト及びプリント配線板
JP2015127817A (ja) 2009-04-14 2015-07-09 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物及びこれを用いた回路形成用基板
JP2010262028A (ja) 2009-04-30 2010-11-18 Nippon Steel Chem Co Ltd ブラックマトリックス用感光性樹脂組成物
JP5571990B2 (ja) 2009-06-04 2014-08-13 旭化成イーマテリアルズ株式会社 ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置
JP5701576B2 (ja) * 2009-11-20 2015-04-15 富士フイルム株式会社 分散組成物及び感光性樹脂組成物、並びに固体撮像素子
JP5577688B2 (ja) 2009-12-17 2014-08-27 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、それを用いた硬化膜及び電子部品
JP4735778B1 (ja) 2009-12-28 2011-07-27 東レ株式会社 ポジ型感光性樹脂組成物
WO2011126076A1 (ja) * 2010-04-09 2011-10-13 大日本印刷株式会社 薄膜トランジスタ基板
JP2012014052A (ja) 2010-07-02 2012-01-19 Fujifilm Corp 着色感光性樹脂組成物、カラーフィルタ、カラーフィルタの製造方法、及び液晶表示装置
TWI430024B (zh) 2010-08-05 2014-03-11 Asahi Kasei E Materials Corp A photosensitive resin composition, a method for manufacturing a hardened bump pattern, and a semiconductor device
US9081276B2 (en) * 2010-09-29 2015-07-14 Kaneka Corporation Photosensitive resin composition production kit, and use thereof
WO2012045736A1 (en) 2010-10-05 2012-04-12 Basf Se Oxime ester derivatives of benzocarbazole compounds and their use as photoinitiators in photopolymerizable compositions
JP2013015701A (ja) 2011-07-05 2013-01-24 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
CN103764708B (zh) * 2011-08-25 2016-12-14 东洋油墨Sc控股株式会社 光聚合性组合物、光聚合性涂覆剂、层叠体及偏光板
JP5831092B2 (ja) 2011-09-27 2015-12-09 東レ株式会社 ポジ型感光性樹脂組成物
JP5772642B2 (ja) 2012-02-09 2015-09-02 Jsr株式会社 硬化性樹脂組成物、表示素子用硬化膜、表示素子用硬化膜の形成方法及び表示素子
JP5953795B2 (ja) 2012-02-15 2016-07-20 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
JP5953158B2 (ja) * 2012-07-26 2016-07-20 富士フイルム株式会社 パターン形成方法及び該方法に使用するための感活性光線性又は感放射線性樹脂組成物
KR101744038B1 (ko) * 2012-07-30 2017-06-07 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 유기 ｅｌ 표시 장치 및 액정 표시 장치
JP2014041264A (ja) 2012-08-22 2014-03-06 Sumitomo Bakelite Co Ltd 感光性樹脂組成物、硬化膜、保護膜、絶縁膜、およびそれを用いた半導体装置、表示体装置
KR102174075B1 (ko) 2012-12-21 2020-11-04 에이치디 마이크로시스템즈 가부시키가이샤 폴리이미드 전구체 수지 조성물
JP5830044B2 (ja) * 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP6062876B2 (ja) 2013-02-28 2017-01-18 富士フイルム株式会社 透明樹脂層形成用組成物、透明樹脂層、固体撮像素子およびオプトエレクトロニクスデバイス
JP6048257B2 (ja) 2013-03-25 2016-12-21 東レ株式会社 耐熱性樹脂及びその前駆体組成物
JP6225445B2 (ja) 2013-03-26 2017-11-08 東レ株式会社 ドライエッチング用フォトレジスト、それを用いたレリーフパターンおよび発光素子の製造方法
JP2014191252A (ja) 2013-03-28 2014-10-06 Sumitomo Bakelite Co Ltd 感光性樹脂組成物、硬化膜、保護膜、半導体装置および表示体装置
US9159547B2 (en) 2013-09-17 2015-10-13 Deca Technologies Inc. Two step method of rapid curing a semiconductor polymer layer
JP6167018B2 (ja) 2013-10-31 2017-07-19 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
KR20160085303A (ko) * 2013-12-11 2016-07-15 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치
JP6279614B2 (ja) * 2013-12-11 2018-02-14 富士フイルム株式会社 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置および有機ｅｌ表示装置
JP5898172B2 (ja) 2013-12-27 2016-04-06 コダマ樹脂工業株式会社 耐薬品性吹込み成形積層容器
CN106462057B (zh) 2014-02-19 2020-04-21 日立化成杜邦微系统股份有限公司 树脂组合物、由其形成的固化膜和图案固化膜、以及它们的制造方法
JP6166682B2 (ja) 2014-03-26 2017-07-19 富士フイルム株式会社 着色組成物、硬化膜、カラーフィルタ、パターン形成方法、カラーフィルタの製造方法、固体撮像素子、および、画像表示装置
JP6167089B2 (ja) 2014-03-27 2017-07-19 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の製造方法および半導体デバイス
CN106458879A (zh) * 2014-05-13 2017-02-22 东洋合成工业株式会社 鎓盐、光酸产生剂、感光性树脂组合物及装置的制造方法
TWI627502B (zh) * 2014-09-04 2018-06-21 Fujifilm Corp 感光性樹脂組成物、硬化膜的製造方法、硬化膜、液晶顯示裝置、有機電激發光顯示裝置及觸控面板
US11092894B2 (en) * 2014-12-31 2021-08-17 Rohm And Haas Electronic Materials Korea Ltd. Method for forming pattern using anti-reflective coating composition comprising photoacid generator
JP6544248B2 (ja) * 2015-02-09 2019-07-17 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
EP3276415A4 (de) * 2015-03-24 2018-09-19 Toray Industries, Inc. Lichtempfindliche harzzusammensetzung
JP6681888B2 (ja) * 2015-05-29 2020-04-15 富士フイルム株式会社 ポリイミド前駆体組成物、感光性樹脂組成物、硬化膜、硬化膜の製造方法、半導体デバイスおよびポリイミド前駆体組成物の製造方法
TWI597574B (zh) * 2015-08-19 2017-09-01 奇美實業股份有限公司 感光性樹脂組成物及其應用
KR102028939B1 (ko) * 2015-08-28 2019-10-07 후지필름 가부시키가이샤 경화막의 제조 방법, 재배선층용 층간 절연막의 제조 방법, 및 반도체 디바이스의 제조 방법
TW201710390A (zh) * 2015-08-31 2017-03-16 Fujifilm Corp 組成物、硬化膜、硬化膜的製造方法、半導體元件的製造方法及半導體元件
JP6886113B2 (ja) * 2015-12-01 2021-06-16 Jsr株式会社 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤
WO2017131037A1 (ja) * 2016-01-29 2017-08-03 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法、および半導体デバイス
KR102147108B1 (ko) * 2016-06-02 2020-08-25 후지필름 가부시키가이샤 적층체의 제조 방법, 반도체 소자의 제조 방법 및 적층체
TWI830588B (zh) * 2016-08-01 2024-01-21 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體元件
TWI758415B (zh) * 2017-02-20 2022-03-21 日商富士軟片股份有限公司 感光性樹脂組成物、含雜環聚合物前體、硬化膜、積層體、硬化膜的製造方法及半導體裝置
TWI763883B (zh) * 2017-07-14 2022-05-11 日商富士軟片股份有限公司 熱硬化性樹脂組成物及其硬化膜、積層體、半導體裝置、以及該等的製造方法

Also Published As

Publication number Publication date
PH12021551275A1 (en) 2021-12-06
TWI837236B (zh) 2024-04-01
TW202032267A (zh) 2020-09-01
US20210302836A1 (en) 2021-09-30
KR20210090205A (ko) 2021-07-19
WO2020116238A1 (ja) 2020-06-11
EP3893054A4 (de) 2022-01-05
JP7261818B2 (ja) 2023-04-20
CN113168093B (zh) 2024-04-30
EP3893054A1 (de) 2021-10-13
KR102636334B1 (ko) 2024-02-14
JPWO2020116238A1 (ja) 2021-10-14
CN113168093A (zh) 2021-07-23

Similar Documents

Publication Publication Date Title
PT3492982T (pt) Composição de resina fotossensível, película curada, laminado, método para produzir película curada, método para produzir laminado, e dispositivo semicondutor
SG11201802076PA (en) Negative photosensitive resin composition, cured film, element and display device each provided with cured film, and method for manufacturing display device
EP3859447A4 (de) Lichtempfindliche harzzusammensetzung, gehärteter film, laminat, verfahren zur herstellung des gehärteten films und halbleiterbauelement
SG11201706733UA (en) Photosensitive resin composition, method for manufacturing cured resin film, and semiconductor device
SG11201807941YA (en) Negative-type photosensitive resin composition, cured film, display device provided with cured film, and production method therefor
SG11201806952SA (en) Negative-type photosensitive resin composition, cured film, display device that includes the cured film, and production method therefor
KR102005682B9 (ko) 감광성 수지 조성물, 경화막, 표시장치, 및 패턴 형성 방법
PT3339352T (pt) Resina, composição, película curada, método para o fabrico de película curada e dispositivo semicondutor
EP3203320A4 (de) Lichtempfindliche harzzusammensetzung, gehärteter film, element mit dem gehärteten film und verfahren zur herstellung eines halbleiterbauelements
EP3342792A4 (de) Lichtempfindliche zusammensetzung, bilderzeugungsverfahren, folienformungsverfahren, harz, bild und folie
SG11201802613SA (en) Negative type coloring photosensitive resin composition, cured film, element, and display device
SG11202105555VA (en) Pattern forming method, photosensitive resin composition, cured film, laminate, and device
SG11201606071WA (en) Negative photosensitive resin composition, cured film obtained by curing same, method for producing cured film, optical device provided with cured film, and backside-illuminated cmos image sensor
SG11202005313QA (en) Photosensitive resin composition, dry film resist, and cured objects obtained therefrom
EP3633455A4 (de) Lichtempfindliche harzzusammensetzung, polymervorläufer, gehärteter film, laminat, herstellungsverfahren für gehärteten film und halbleiterbauelement
PL3358411T3 (pl) Kompozycja żywicy światłoczułej na pierwotną formę drukową do druku wypukłego i otrzymana z niej pierwotna forma drukowa do druku wypukłego
SG11202003634PA (en) Negative type photosensitive siloxane composition and methods for producing cured film and electronic device using the same
EP3447090A4 (de) Wärmehärtende harzzusammensetzung, gehärtete folie und verfahren zu ihrer herstellung sowie flexible leiterplatte mit gehärteter folie und verfahren zur herstellung davon
EP3128369A4 (de) Lichtempfindliche harzzusammensetzung, flachdruck-originalplatte und verfahren zur herstellung einer flachdruckplatte
SG11201908559XA (en) Photosensitive resin composition, photosensitive resin composition film, insulating film and electronic component
EP3648084A4 (de) Verfahren zur herstellung einer bildanzeigevorrichtung, lichthärtbare harzzusammensetzung und lichtdurchlässige gehärtete harzzusammensetzung
EP3825352A4 (de) Mit organopolysiloxan gehärteter film, verwendung davon und verfahren zur herstellung davon
SG11201707415TA (en) Photosensitive resin composition, photosensitive resin composition film, cured product, insulating film and multilayer wiring board
SG11202001334QA (en) Positive type photosensitive siloxane composition and cured film using the same
EP3128367A4 (de) Lichtempfindliche harzzusammensetzung, flachdruck-originalplatte und verfahren zur herstellung einer flachdruckplatte