SG11202103910PA - Silicon nitride etching composition and method - Google Patents
Silicon nitride etching composition and methodInfo
- Publication number
- SG11202103910PA SG11202103910PA SG11202103910PA SG11202103910PA SG11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon nitride
- etching composition
- nitride etching
- composition
- silicon
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Weting (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862767904P | 2018-11-15 | 2018-11-15 | |
PCT/US2019/060974 WO2020102228A1 (en) | 2018-11-15 | 2019-11-12 | Silicon nitride etching composition and method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202103910PA true SG11202103910PA (en) | 2021-05-28 |
Family
ID=70727494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202103910PA SG11202103910PA (en) | 2018-11-15 | 2019-11-12 | Silicon nitride etching composition and method |
Country Status (7)
Country | Link |
---|---|
US (3) | US11053440B2 (zh) |
JP (2) | JP7438211B2 (zh) |
KR (2) | KR20240013860A (zh) |
CN (1) | CN112996881A (zh) |
SG (1) | SG11202103910PA (zh) |
TW (2) | TW202325824A (zh) |
WO (1) | WO2020102228A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11053440B2 (en) * | 2018-11-15 | 2021-07-06 | Entegris, Inc. | Silicon nitride etching composition and method |
KR20220049560A (ko) * | 2019-08-21 | 2022-04-21 | 엔테그리스, 아이엔씨. | 고선택적 질화규소 에칭을 위한 개선된 제제 |
JP2023536836A (ja) * | 2020-07-30 | 2023-08-30 | インテグリス・インコーポレーテッド | 窒化シリコン膜を選択的にエッチングするための組成物及び方法 |
KR102345842B1 (ko) * | 2020-09-21 | 2021-12-31 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
US20220363990A1 (en) * | 2021-05-12 | 2022-11-17 | Entegris, Inc. | Selective etchant compositions and methods |
KR20240012468A (ko) | 2021-05-26 | 2024-01-29 | 엔테그리스, 아이엔씨. | 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법 |
KR20230079903A (ko) * | 2021-11-29 | 2023-06-07 | (주)후성 | 실리콘 질화막 에칭 조성물 및 이의 제조방법 |
JP2023109710A (ja) * | 2022-01-27 | 2023-08-08 | ステラケミファ株式会社 | 微細加工処理剤、及び微細加工処理方法 |
CN116631852A (zh) * | 2022-02-14 | 2023-08-22 | 联芯集成电路制造(厦门)有限公司 | 硬掩模层的移除方法 |
CN115873599B (zh) * | 2022-10-10 | 2024-05-17 | 湖北兴福电子材料股份有限公司 | 氮化硅/氧化硅的3d nand结构片的选择性蚀刻液 |
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JP2012033561A (ja) * | 2010-07-28 | 2012-02-16 | Sanyo Chem Ind Ltd | 窒化ケイ素用エッチング液 |
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US10167425B2 (en) * | 2016-05-04 | 2019-01-01 | Oci Company Ltd. | Etching solution capable of suppressing particle appearance |
KR102424391B1 (ko) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
KR102240647B1 (ko) * | 2017-03-28 | 2021-04-15 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
KR101828437B1 (ko) | 2017-04-06 | 2018-03-29 | 주식회사 디엔에스 | 실리콘 질화막 식각용 조성물. |
KR102258316B1 (ko) * | 2018-06-25 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
US11053440B2 (en) * | 2018-11-15 | 2021-07-06 | Entegris, Inc. | Silicon nitride etching composition and method |
-
2019
- 2019-11-12 US US16/681,449 patent/US11053440B2/en active Active
- 2019-11-12 CN CN201980073936.8A patent/CN112996881A/zh active Pending
- 2019-11-12 KR KR1020247002231A patent/KR20240013860A/ko active Application Filing
- 2019-11-12 SG SG11202103910PA patent/SG11202103910PA/en unknown
- 2019-11-12 JP JP2021526685A patent/JP7438211B2/ja active Active
- 2019-11-12 KR KR1020217014303A patent/KR102628802B1/ko active Application Filing
- 2019-11-12 WO PCT/US2019/060974 patent/WO2020102228A1/en active Application Filing
- 2019-11-15 TW TW112106253A patent/TW202325824A/zh unknown
- 2019-11-15 TW TW108141573A patent/TWI797396B/zh active
-
2021
- 2021-06-07 US US17/341,138 patent/US11697767B2/en active Active
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2023
- 2023-05-11 JP JP2023078794A patent/JP2023109854A/ja active Pending
- 2023-05-24 US US18/201,363 patent/US20230295502A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TW202325824A (zh) | 2023-07-01 |
US20200157423A1 (en) | 2020-05-21 |
TW202026403A (zh) | 2020-07-16 |
US11697767B2 (en) | 2023-07-11 |
JP7438211B2 (ja) | 2024-02-26 |
CN112996881A (zh) | 2021-06-18 |
KR20240013860A (ko) | 2024-01-30 |
JP2022507589A (ja) | 2022-01-18 |
TWI797396B (zh) | 2023-04-01 |
US20230295502A1 (en) | 2023-09-21 |
KR20210066007A (ko) | 2021-06-04 |
US20210296136A1 (en) | 2021-09-23 |
KR102628802B1 (ko) | 2024-01-24 |
JP2023109854A (ja) | 2023-08-08 |
US11053440B2 (en) | 2021-07-06 |
WO2020102228A1 (en) | 2020-05-22 |
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