SG11202005918UA - Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method - Google Patents
Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing methodInfo
- Publication number
- SG11202005918UA SG11202005918UA SG11202005918UA SG11202005918UA SG11202005918UA SG 11202005918U A SG11202005918U A SG 11202005918UA SG 11202005918U A SG11202005918U A SG 11202005918UA SG 11202005918U A SG11202005918U A SG 11202005918UA SG 11202005918U A SG11202005918U A SG 11202005918UA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- reflective mask
- reflective
- film
- semiconductor device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017251163 | 2017-12-27 | ||
| PCT/JP2018/047246 WO2019131506A1 (ja) | 2017-12-27 | 2018-12-21 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202005918UA true SG11202005918UA (en) | 2020-07-29 |
Family
ID=67067319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202005918UA SG11202005918UA (en) | 2017-12-27 | 2018-12-21 | Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11561463B2 (https=) |
| JP (1) | JP7208163B2 (https=) |
| KR (1) | KR102830574B1 (https=) |
| SG (1) | SG11202005918UA (https=) |
| TW (1) | TWI786243B (https=) |
| WO (1) | WO2019131506A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102002441B1 (ko) | 2017-01-17 | 2019-07-23 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법 |
| JP7610346B2 (ja) * | 2019-11-01 | 2025-01-08 | テクセンドフォトマスク株式会社 | 反射型マスク及び反射型マスクの製造方法 |
| JP7525354B2 (ja) * | 2020-09-28 | 2024-07-30 | 株式会社トッパンフォトマスク | 反射型フォトマスクブランク及び反射型フォトマスク |
| US20220137500A1 (en) * | 2020-10-30 | 2022-05-05 | AGC Inc. | Glass substrate for euvl, and mask blank for euvl |
| KR20220058424A (ko) * | 2020-10-30 | 2022-05-09 | 에이지씨 가부시키가이샤 | Euvl용 유리 기판, 및 euvl용 마스크 블랭크 |
| KR102638933B1 (ko) * | 2021-09-28 | 2024-02-22 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 도전막을 구비한 기판 |
| KR20250060932A (ko) | 2023-03-17 | 2025-05-07 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판 |
| WO2024195577A1 (ja) * | 2023-03-17 | 2024-09-26 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクおよび導電膜付き基板 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6737201B2 (en) | 2000-11-22 | 2004-05-18 | Hoya Corporation | Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device |
| JP3939132B2 (ja) | 2000-11-22 | 2007-07-04 | Ｈｏｙａ株式会社 | 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法 |
| TW583503B (en) * | 2000-12-01 | 2004-04-11 | Kansai Paint Co Ltd | Method of forming conductive pattern |
| US7524593B2 (en) * | 2005-08-12 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Exposure mask |
| JP5082857B2 (ja) | 2005-12-12 | 2012-11-28 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板 |
| US7678511B2 (en) | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| EP1993781A4 (en) * | 2006-02-03 | 2016-11-09 | Semiconductor Energy Lab Co Ltd | MANUFACTURING METHOD FOR MEMORY ELEMENT, LASER RADIATION APPARATUS AND LASER RADIATION METHOD |
| WO2008072706A1 (ja) | 2006-12-15 | 2008-06-19 | Asahi Glass Company, Limited | Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板 |
| DE102011078927B4 (de) | 2010-07-12 | 2019-01-31 | Carl Zeiss Sms Ltd. | Verfahren zum Korrigieren von Fehlern einer photolithographischen Maske |
| EP2581789B1 (en) * | 2011-10-14 | 2020-04-29 | Fundació Institut de Ciències Fotòniques | Optically transparent and electrically conductive coatings and method for their deposition on a substrate |
| JP6157874B2 (ja) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法 |
| JP6039207B2 (ja) * | 2012-03-23 | 2016-12-07 | Hoya株式会社 | Ｅｕｖリソグラフィー用多層反射膜付き基板の製造方法及びｅｕｖリソグラフィー用反射型マスクブランクの製造方法、ｅｕｖリソグラフィー用反射型マスクの製造方法、及び半導体装置の製造方法 |
| US10431354B2 (en) * | 2013-03-15 | 2019-10-01 | Guardian Glass, LLC | Methods for direct production of graphene on dielectric substrates, and associated articles/devices |
| JP6297321B2 (ja) | 2013-12-09 | 2018-03-20 | Hoya株式会社 | 機能膜付き基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
| US9618836B2 (en) | 2014-04-22 | 2017-04-11 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production |
| JP6033987B1 (ja) * | 2014-12-19 | 2016-11-30 | Hoya株式会社 | マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 |
| DE102015108569B4 (de) * | 2015-05-29 | 2020-10-08 | Advanced Mask Technology Center Gmbh & Co. Kg | Reflektierende Fotomaske und Reflexionstyp-Maskenrohling |
| JP6288327B2 (ja) * | 2017-02-06 | 2018-03-07 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク |
-
2018
- 2018-12-21 WO PCT/JP2018/047246 patent/WO2019131506A1/ja not_active Ceased
- 2018-12-21 SG SG11202005918UA patent/SG11202005918UA/en unknown
- 2018-12-21 TW TW107146312A patent/TWI786243B/zh active
- 2018-12-21 KR KR1020207011177A patent/KR102830574B1/ko active Active
- 2018-12-21 JP JP2019561646A patent/JP7208163B2/ja active Active
- 2018-12-21 US US16/955,734 patent/US11561463B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201928506A (zh) | 2019-07-16 |
| TWI786243B (zh) | 2022-12-11 |
| US20210103209A1 (en) | 2021-04-08 |
| KR20200100604A (ko) | 2020-08-26 |
| JP7208163B2 (ja) | 2023-01-18 |
| US11561463B2 (en) | 2023-01-24 |
| WO2019131506A1 (ja) | 2019-07-04 |
| JPWO2019131506A1 (ja) | 2020-12-10 |
| KR102830574B1 (ko) | 2025-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG10201911400WA (en) | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
| SG10201911502WA (en) | Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
| SG11202005918UA (en) | Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
| SG11202002853TA (en) | Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
| SG11202011370VA (en) | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method | |
| SG11202106508PA (en) | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device | |
| SG11202011373SA (en) | Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
| SG10202002515QA (en) | Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
| SG11201911415VA (en) | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
| SG11201807251SA (en) | Reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
| PT3572478T (pt) | Uso de película adesiva e processo de fabrico de aparelho eletrónico | |
| SG11202109244UA (en) | Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
| SG10201605473TA (en) | Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device | |
| EP3106920A4 (en) | Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, photomask, pattern forming method, method for manufacturing electronic device, and electronic device | |
| SG11202101338UA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG11202004856XA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG11202107980SA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| EP3339023A4 (en) | Laminate, method for manufacturing laminate, semiconductor device, and method for manufacturing semiconductor device | |
| EP3076437A4 (en) | Thin film transistor and manufacturing method thereof, display substrate and display device | |
| SG10201911903XA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device | |
| SG10202009397WA (en) | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
| SG11201803005XA (en) | First protective film forming sheet, method for forming first protective film, and method for manufacturing semiconductor chip | |
| TW201614717A (en) | Semiconductor device and method for fabricating the same | |
| SG11202109240PA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| EP3796391A4 (en) | OLED DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE |